AOS Semiconductor Product Reliability Report AON6458, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com This AOS product reliability report summarizes the qualification result for AON6458. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AON6458 passes AOS quality and reliability requirements. The released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality. Table of Contents: I. II. III. IV. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation I. Product Description: The AON6458 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. -RoHS Compliant -Halogen Free Detailed information refers to datasheet. II. Die / Package Information: AON6458 Standard sub-micron High voltage N channel Package Type DFN 5x6 Lead Frame Cu Die Attach Ag epoxy Bonding Wire Cu & Au wire Mold Material Epoxy resin with silica filler MSL (moisture sensitive level) Level 1 based on J-STD-020 Process Note * based on information provided by assembler and mold compound supplier III. Result of Reliability Stress for AON6458 Test Item Test Condition Time Point MSL Precondition 168hr 85°c /85%RH +3 cycle reflow@260°c - HTGB Temp = 150°°c, Vgs=100% of Vgsmax 168hrs 500 hrs 1000 hrs Lot Attribution Total Sample size Number of Failures 11 lots 1815pcs 0 JESD22A113 77pcs 0 JESD22A108 0 JESD22A108 605pcs 0 JESD22A110 1 lot (Note A*) HTRB Pressure Pot Temperature Cycle 77pcs / lot Temp = 150°°c, Vds=80% of Vdsmax 168hrs 500 hrs 1000 hrs 130 +/- 2°°c, 85%RH, 33.3 psi, Vgs = 100% of Vgs max 121°°c, 29.7psi, RH=100% 100 hrs 11 lots 96 hrs (Note A*) 11 lots 55pcs / lot 605pcs 0 JESD22A102 -65°°c to 150°°c, air to air 250 / 500 cycles (Note A*) 11 lots 55pcs / lot 605pcs 0 JESD22A104 (Note A*) 55pcs / lot 77pcs 1 lot (Note A*) HAST Standard 77pcs / lot Note A: The reliability data presents total of available generic data up to the published date. IV. Reliability Evaluation FIT rate (per billion): 46 MTTF = 2478 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size of the selected product (AON6458). Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] 9 = 1.83 x 10 / [2x (2x77x500) x258] = 46 9 7 MTTF = 10 / FIT = 2.17 x 10 hrs = 2478 years Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: Af 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C 258 87 32 13 5.64 2.59 1 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u = The use junction temperature in degree (Kelvin), K = C+273.16 -5 K = Boltzmann’s constant, 8.617164 X 10 eV / K