Datasheet

AON6482
100V N-Channel MOSFET
General Description
Product Summary
The AON6482 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
VDS
100V
28A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 37mΩ
RDS(ON) (at VGS = 4.5V)
< 42mΩ
100% UIS Tested
100% Rg Tested
DFN5X6
Top View
D
Top View
Bottom View
1
8
2
7
3
6
4
5
G
PIN1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current
C
V
A
70
5.5
IDSM
TA=70°C
±20
18
IDM
TA=25°C
Units
V
28
ID
TC=100°C
Maximum
100
A
4.4
Avalanche Current C
IAS, IAR
35
A
Avalanche energy L=0.1mH C
TC=25°C
EAS, EAR
61
mJ
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev2 : March 2011
2.5
Steady-State
Steady-State
RθJA
RθJC
W
1.6
TJ, TSTG
Symbol
t ≤ 10s
W
25
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
63
PD
TC=100°C
-55 to 150
Typ
14.2
42
1.2
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°C
Max
20
50
2
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON6482
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
100
Typ
1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.6
ID(ON)
On state drain current
VGS=10V, VDS=5V
70
TJ=55°C
µA
5
VDS=0V, VGS= ±20V
100
VGS=10V, ID=10A
2.1
2.7
29
37
59
71
VGS=4.5V, ID=10A
32
42
VDS=5V, ID=10A
45
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
Maximum Body-Diode Continuous Current
G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
nA
V
A
RDS(ON)
TJ=125°C
Units
V
VDS=100V, VGS=0V
IDSS
IS
Max
mΩ
mΩ
S
1
V
60
A
pF
1300
1630
2000
70
100
130
pF
30
50
70
pF
0.3
0.75
1.1
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
26
34
44
nC
Qg(4.5V) Total Gate Charge
14
18
22
nC
4
6
8
nC
9
13
nC
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
VGS=0V, VDS=50V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=50V, ID=10A
5
VGS=10V, VDS=50V, RL=5Ω,
RGEN=3Ω
7
ns
7
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=10A, dI/dt=500A/µs
22
32
42
Qrr
Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs
140
200
260
29
ns
7
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev2 : March 2011
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Page 2 of 6
AON6482
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
50
10V
VDS=5V
7V
40
40
3.5V
4V
30
ID(A)
ID (A)
30
125°C
20
20
25°C
VGS=3V
10
10
0
0
0
1
2
3
4
1
5
2
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
50
4
5
Normalized On-Resistance
2.8
45
RDS(ON) (mΩ )
3
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
40
VGS=4.5V
35
30
VGS=10V
25
VGS=10V
ID=10A
2.4
2
1.6
VGS=4.5V
ID=10A
1.2
17
5
2
10
0.8
20
0
0
5
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
200
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
80
1.0E+02
ID=10A
1.0E+01
70
40
50
IS (A)
RDS(ON) (mΩ )
1.0E+00
60
125°C
125°C
1.0E-01
1.0E-02
25°C
40
1.0E-03
30
1.0E-04
25°C
1.0E-05
20
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev2 : March 2011
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON6482
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
10
VDS=50V
ID=10A
2500
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
2
1500
1000
500
0
5
10
15
20
25
30
35
Qg (nC)
Figure 7: Gate-Charge Characteristics
40
0
Coss
10µs 10µs
RDS(ON)
limited
40
60
80
VDS (Volts)
Figure 8: Capacitance Characteristics
160
Power (W)
10.0
20
100
200
100.0
100µs
DC
1.0
1ms
10ms
TJ(Max)=175°C
TC=25°C
0.1
TJ(Max)=175°C
TC=25°C
17
5
2
10
120
80
40
0.0
0
0.01
0.1
1
10
VDS (Volts)
100
1000
0.0001
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
0.001
0.01
0.1
1
0
10
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
Crss
0
0
ID (Amps)
2000
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=2°C/W
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev2 : March 2011
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Page 4 of 6
AON6482
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
TA=25°C
TA=100°C
TA=125°C
TA=150°C
10
60
Power Dissipation (W)
IAR (A) Peak Avalanche Current
100
50
40
30
20
10
1
0
1
10
100
1000
µs)
Time in avalanche, tA (µ
Figure 12: Single Pulse Avalanche capability
(Note C)
0
25
50
75
100
150
1000
30
TA=25°C
25
20
Power (W)
Current rating ID(A)
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
15
100
17
5
2
10
10
10
5
1
0.0001
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 14: Current De-rating (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
100
0
18
1
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
0.01
40
RθJA=50°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev2 : March 2011
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Page 5 of 6
AON6482
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev2 : March 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6