AON6482 100V N-Channel MOSFET General Description Product Summary The AON6482 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS 100V 28A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 37mΩ RDS(ON) (at VGS = 4.5V) < 42mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G PIN1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current Continuous Drain Current C V A 70 5.5 IDSM TA=70°C ±20 18 IDM TA=25°C Units V 28 ID TC=100°C Maximum 100 A 4.4 Avalanche Current C IAS, IAR 35 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 61 mJ Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev2 : March 2011 2.5 Steady-State Steady-State RθJA RθJC W 1.6 TJ, TSTG Symbol t ≤ 10s W 25 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 63 PD TC=100°C -55 to 150 Typ 14.2 42 1.2 www.aosmd.com °C Max 20 50 2 Units °C/W °C/W °C/W Page 1 of 6 AON6482 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 100 Typ 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.6 ID(ON) On state drain current VGS=10V, VDS=5V 70 TJ=55°C µA 5 VDS=0V, VGS= ±20V 100 VGS=10V, ID=10A 2.1 2.7 29 37 59 71 VGS=4.5V, ID=10A 32 42 VDS=5V, ID=10A 45 Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance nA V A RDS(ON) TJ=125°C Units V VDS=100V, VGS=0V IDSS IS Max mΩ mΩ S 1 V 60 A pF 1300 1630 2000 70 100 130 pF 30 50 70 pF 0.3 0.75 1.1 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 26 34 44 nC Qg(4.5V) Total Gate Charge 14 18 22 nC 4 6 8 nC 9 13 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time VGS=0V, VDS=50V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=50V, ID=10A 5 VGS=10V, VDS=50V, RL=5Ω, RGEN=3Ω 7 ns 7 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=10A, dI/dt=500A/µs 22 32 42 Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs 140 200 260 29 ns 7 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev2 : March 2011 www.aosmd.com Page 2 of 6 AON6482 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 50 10V VDS=5V 7V 40 40 3.5V 4V 30 ID(A) ID (A) 30 125°C 20 20 25°C VGS=3V 10 10 0 0 0 1 2 3 4 1 5 2 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 50 4 5 Normalized On-Resistance 2.8 45 RDS(ON) (mΩ ) 3 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 40 VGS=4.5V 35 30 VGS=10V 25 VGS=10V ID=10A 2.4 2 1.6 VGS=4.5V ID=10A 1.2 17 5 2 10 0.8 20 0 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 80 1.0E+02 ID=10A 1.0E+01 70 40 50 IS (A) RDS(ON) (mΩ ) 1.0E+00 60 125°C 125°C 1.0E-01 1.0E-02 25°C 40 1.0E-03 30 1.0E-04 25°C 1.0E-05 20 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev2 : March 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON6482 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 10 VDS=50V ID=10A 2500 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2 1500 1000 500 0 5 10 15 20 25 30 35 Qg (nC) Figure 7: Gate-Charge Characteristics 40 0 Coss 10µs 10µs RDS(ON) limited 40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics 160 Power (W) 10.0 20 100 200 100.0 100µs DC 1.0 1ms 10ms TJ(Max)=175°C TC=25°C 0.1 TJ(Max)=175°C TC=25°C 17 5 2 10 120 80 40 0.0 0 0.01 0.1 1 10 VDS (Volts) 100 1000 0.0001 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance Crss 0 0 ID (Amps) 2000 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=2°C/W 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev2 : March 2011 www.aosmd.com Page 4 of 6 AON6482 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 70 TA=25°C TA=100°C TA=125°C TA=150°C 10 60 Power Dissipation (W) IAR (A) Peak Avalanche Current 100 50 40 30 20 10 1 0 1 10 100 1000 µs) Time in avalanche, tA (µ Figure 12: Single Pulse Avalanche capability (Note C) 0 25 50 75 100 150 1000 30 TA=25°C 25 20 Power (W) Current rating ID(A) 125 TCASE (°C) Figure 13: Power De-rating (Note F) 15 100 17 5 2 10 10 10 5 1 0.0001 0 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note F) Zθ JA Normalized Transient Thermal Resistance 10 100 0 18 1 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 0.01 40 RθJA=50°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev2 : March 2011 www.aosmd.com Page 5 of 6 AON6482 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev2 : March 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6