AON6590 40V N-Channel MOSFET General Description Product Summary VDS • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications • RoHS and Halogen-Free Compliant Applications ID (at VGS=10V) 40V 100A RDS(ON) (at VGS=10V) < 0.99mΩ RDS(ON) (at VGS=4.5V) < 1.5mΩ 100% UIS Tested 100% Rg Tested • Synchronous Rectification in DC/DC and AC/DC Converters • Isolated DC/DC Converters in Telecom and Industrial D DFN5x6 Top View Top View Bottom View 1 8 2 7 3 6 4 5 G PIN1 PIN1 S PIN1 Orderable Part Number Package Type Form Minimum Order Quantity AON6590 DFN 5x6 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Avalanche Current C Avalanche energy L=0.3mH VDS Spike Power Dissipation B C 10µs TC=25°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.3.0: December 2014 IAS 65 A EAS 634 mJ 48 V 208 7.3 Steady-State Steady-State W 4.7 TJ, TSTG Symbol t ≤ 10s W 83 PDSM TA=70°C A 54 PD TA=25°C Power Dissipation A A 67 VSPIKE TC=100°C V 400 IDSM TA=70°C ±20 100 IDM TA=25°C Continuous Drain Current Units V 100 ID TC=100°C C Maximum 40 RθJA RθJC -55 to 150 Typ 14 40 0.45 www.aosmd.com °C Max 17 50 0.6 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1.3 TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance V VGS=0V, VDS=20V, f=1MHz f=1MHz µA 5 VGS=10V, ID=20A VDS=5V, ID=20A Units 1 TJ=55°C Static Drain-Source On-Resistance Max 40 VDS=40V, VGS=0V IDSS RDS(ON) Typ 0.5 ±100 nA 1.8 2.3 V 0.78 0.99 1.17 1.55 1.15 1.5 mΩ 1 V 100 A 100 0.66 mΩ S 8320 pF 1438 pF 85 pF 1.15 1.8 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 100 nC Qg(4.5V) Total Gate Charge 45 nC Qgs Gate Source Charge Qgd tD(on) VGS=10V, VDS=20V, ID=20A 25 nC Gate Drain Charge 7 nC Turn-On DelayTime 19 ns 7 ns 69 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=20V, RL=1.0Ω, RGEN=3Ω 10 ns IF=20A, dI/dt=400A/µs 26 Body Diode Reverse Recovery Charge IF=20A, dI/dt=400A/µs 83 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.3.0: December 2014 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 120 3.5V 100 4.5V 10V 80 ID(A) ID (A) 80 VDS=5V 100 60 40 60 125°C 40 20 20 25°C VGS=3V 0 0 0 1 2 3 4 1 5 1.5 2.5 3 3.5 4 4.5 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 2 Normalized On-Resistance 1.8 1.5 RDS(ON) (mΩ) 2 VGS=4.5V 1 0.5 VGS=10V 1.6 VGS=10V ID=20A 1.4 1.2 VGS=4.5V ID=20A 1 0.8 0 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 3 1.0E+02 ID=20A 1.0E+00 2 IS (A) RDS(ON) (mΩ) 1.0E+01 125°C 125°C 1.0E-01 1.0E-02 1 25°C 1.0E-03 1.0E-04 25°C 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.3.0: December 2014 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 10000 VDS=20V ID=20A Ciss 8000 Capacitance (pF) VGS (Volts) 8 6 4 2 6000 4000 Coss 2000 Crss 0 0 0 20 40 60 80 100 120 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 20 25 30 35 40 1000 TJ(Max)=150°C TC=25°C 10µs 10µs RDS(ON) limited 800 100µs 1ms 10ms 10.0 Power (W) ID (Amps) 15 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 100.0 10 DC 1.0 TJ(Max)=150°C TC=25°C 400 200 0.1 0.0 0.01 600 0.1 1 10 100 1000 VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=0.6°C/W 1 0.1 PD Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.3.0: December 2014 www.aosmd.com Page 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 250 150 Current rating ID(A) Power Dissipation (W) 200 150 100 50 100 50 0 0 0 25 50 75 100 125 150 0 TCASE (°C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.3.0: December 2014 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.3.0: December 2014 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6