PANASONIC UN521K

Transistors with built-in Resistor
UNR521x Series (UN521x Series)
Silicon NPN epitaxial planar type
(0.425)
Unit: mm
For digital circuits
0.3+0.1
–0.0
0.15+0.10
–0.05
2.1±0.1
5˚
1.25±0.10
0.9+0.2
–0.1
• Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
• S-Mini type package, allowing automatic insertion through the tape
packing and magazine packing
0.9±0.1
3
■ Features
2
0.2±0.1
1
(0.65) (0.65)
1.3±0.1
■ Resistance by Part Number
(R2)

10 kΩ
22 kΩ
47 kΩ
47 kΩ



5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
4.7 kΩ
4.7 kΩ
47 kΩ
47 kΩ
47 kΩ
2.2 kΩ
22 kΩ
10˚
0 to 0.1
• UNR5210
• UNR5211
• UNR5212
• UNR5213
• UNR5214
• UNR5215
• UNR5216
• UNR5217
• UNR5218
• UNR5219
• UNR521D
• UNR521E
• UNR521F
• UNR521K
• UNR521L
• UNR521M
• UNR521N
• UNR521T
• UNR521V
• UNR521Z
2.0±0.2
Marking symbol (R1)
(UN5210)
8L
47 kΩ
(UN5211)
8A
10 kΩ
(UN5212)
8B
22 kΩ
(UN5213)
8C
47 kΩ
(UN5214)
8D
10 kΩ
(UN5215)
8E
10 kΩ
(UN5216)
8F
4.7 kΩ
(UN5117)
8H
22 kΩ
(UN5218)
8I
0.51 kΩ
(UN5219)
8K
1 kΩ
(UN521D)
8M
47 kΩ
(UN521E)
8N
47 kΩ
(UN521F)
8O
4.7 kΩ
(UN521K)
8P
10 kΩ
(UN521L)
8Q
4.7 kΩ
(UN521M) EL
2.2 kΩ
(UN521N)
EX
4.7 kΩ
(UN521T)
EZ
22 kΩ
(UN521V)
FD
2.2 kΩ
(UN521Z)
FF
4.7 kΩ
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Internal Connection
R1
B
C
R2
E
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
50
V
Collector-emitter voltage (Base open)
VCEO
50
V
Collector current
IC
100
mA
Total power dissipation
PT
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Note) The part numbers in the parenthesis show conventional part number.
Publication date: January 2004
SJH00024CED
1
UNR521x Series
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = 10 µA, IE = 0
Conditions
Min
50
Typ
Max
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 0
50
Collector-base cutoff current (Emitter open)
ICBO
VCB = 50 V, IE = 0
Collector-emitter cutoff current (Base open)
ICEO
VCE = 50 V, IB = 0
0.5
Emitter-base UNR5210/5215/5216/5217
IEBO
VEB = 6 V, IC = 0
0.01
V
V
0.1
cutoff current UNR5213
0.1
(Collector
UNR5212/5214/521D/
0.2
open)
521E/521M/521N/521T
UNR521Z
0.4
UNR5211
0.5
UNR521F/521K
1.0
UNR5219
1.5
UNR5218/521L/521V
2.0
Forward
UNR521V
current
UNR5218/521K/521L
hFE
VCE = 10 V, IC = 5 mA
6
20
µA
mA

20
transfer
UNR5219/521D/521F
30
ratio
UNR5211
35
UNR5212/521E
60
UNR521Z
60
UNR5213/5214/521M
80
UNR521N/521T
80
UNR5210*/5215*/5216*/5217*
Collector-emitter saturation voltage
Unit
200
400
160
VCE(sat)
460
IC = 10 mA, IB = 0.3 mA
0.25
V
IC = 10 mA, IB = 1.5 mA
UNR521V
Output voltage high-level
VOH
Output voltage low-level
VOL
VCC = 5 V, VB = 0.5 V, RL = 1 kΩ
V
VCC = 5 V, VB = 2.5 V, RL = 1 kΩ
0.2
V
VCC = 5 V, VB = 3.5 V, RL = 1 kΩ
UNR5213/521K
UNR521D
VCC = 5 V, VB = 10 V, RL = 1 kΩ
UNR521E
VCC = 5 V, VB = 6.0 V, RL = 1 kΩ
Transition frequency
fT
Input
R1
UNR5218
4.9
VCB = 10 V, IE = −2 mA, f = 200 MHz
150
−30%
resistance UNR5219
0.51
MHz
+30%
kΩ
1.0
UNR521M/521V
2.2
UNR5216/521F/521L/521N
UNR521Z
4.7
UNR5211/5214/5215/521K
10
UNR5212/5217/521T
22
UNR5210/5213/521D/521E
47
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
2
Rank
Q
R
S
No-rank
hFE
160 to 260
210 to 340
290 to 460
160 to 460
SJH00024CED
UNR521x Series
■ Electrical Characteristics (continued) Ta = 25°C ± 3°C
Parameter
Symbol
Resistance UNR521M
ratio
Conditions
Min
R1/R2
Typ
Max
Unit

0.047
UNR521N
0.1
UNR5218/5219
0.08
UNR521Z
0.10
0.12
0.21
UNR5214
0.17
UNR521T
0.21
0.25
0.47
UNR521F
0.37
UNR521V
0.47
0.57
1.0
UNR5211/5212/5213/521L
0.8
1.0
1.2
UNR521K
1.70
2.13
2.60
UNR521E
1.70
2.14
2.60
UNR521D
3.7
4.7
5.7
Common characteristics chart
PT  Ta
Total power dissipation PT (mW)
240
200
160
120
80
40
0
0
40
80
120
160
Ambient temperature Ta (°C)
Characteristics charts of UNR5210
Ta = 25°C
Collector current IC (mA)
50
40
30
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.1 mA
20
10
0
0
2
4
6
8
10
Collector-emitter voltage VCE
12
(V)
102
hFE  IC
400
IC / IB = 10
VCE = 10 V
Forward current transfer ratio hFE
IB = 1.0 mA
0.9 mA
0.8 mA
VCE(sat)  IC
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
60
10
1
Ta = 75°C
25°C
10−1
300
Ta = 75°C
25°C
200
−25°C
100
−25°C
10−2
10−1
1
10
Collector current IC (mA)
SJH00024CED
102
0
1
10
102
103
Collector current IC (mA)
3
UNR521x Series
Cob  VCB
IO  VIN
104
f = 1 MHz
IE = 0
Ta = 25°C
Output current IO (µA)
5
4
3
2
VIN  IO
102
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
6
102
10
VO = 0.2 V
Ta = 25°C
10
1
10 −1
1
0
10 −1
1
1
0.4
102
10
0.6
0.8
1.0
1.2
1.4
10 −2
10 −1
Input voltage VIN (V)
Collector-base voltage VCB (V)
1
102
10
Output current IO (mA)
Characteristics charts of UNR5211
VCE(sat)  IC
Collector current IC (mA)
0.7 mA
0.6 mA
0.5 mA
120
0.4 mA
0.3 mA
80
0.2 mA
40
0.1 mA
0
0
2
4
6
8
10
12
102
IC / IB = 10
10
1
25°C
−25˚C
10 −2
10 −1
1
Ta = 75°C
200
25°C
−25°C
100
1
3
2
102
103
VIN  IO
102
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
4
10
Collector current IC (mA)
IO  VIN
Output current IO (µA)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
300
0
102
10
104
f = 1 MHz
IE = 0
Ta = 25°C
102
10
VO = 0.2 V
Ta = 25°C
10
1
10 −1
1
0
10 −1
10
Collector-base voltage VCB (V)
4
VCE = 10 V
Collector current IC (mA)
Cob  VCB
5
Ta = 75°C
10 −1
Collector-emitter voltage VCE (V)
6
hFE  IC
400
Forward current transfer ratio hFE
Ta = 25°C
IB = 1.0 mA
0.9 mA
0.8 mA
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
160
102
1
0.4
0.6
0.8
1.0
1.2
Input voltage VIN (V)
SJH00024CED
1.4
10 −2
10 −1
1
10
Output current IO (mA)
102
UNR521x Series
Characteristics charts of UNR5212
VCE(sat)  IC
IB = 1.0 mA
0.9 mA
0.8 mA
120
0.7 mA
0.6 mA
0.5 mA
0.4 mA
80
0.3 mA
0.2 mA
40
0.1 mA
0
0
2
4
6
8
10
12
102
IC / IB = 10
1
10 −1
−25°C
10 −2
10 −1
1
Ta = 75°C
200
25°C
−25°C
100
0
102
10
300
1
IO  VIN
104
4
3
2
102
103
VIN  IO
102
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
f = 1 MHz
IE = 0
Ta = 25°C
10
Collector current IC (mA)
Collector current IC (mA)
Output current IO (µA)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Ta = 75°C
25°C
Cob  VCB
5
VCE = 10 V
10
Collector-emitter voltage VCE (V)
6
hFE  IC
400
Forward current transfer ratio hFE
Collector current IC (mA)
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
160
102
10
VO = 0.2 V
Ta = 25°C
10
1
10 −1
1
0
10 −1
1
1
0.4
102
10
Collector-base voltage VCB (V)
0.6
0.8
1.0
1.2
10 −2
10 −1
1.4
Input voltage VIN (V)
1
102
10
Output current IO (mA)
Characteristics charts of UNR5213
VCE(sat)  IC
Collector current IC (mA)
0.9 mA
0.8 mA
0.7 mA
0.6 mA
120
0.5 mA
0.4 mA
80
0.3 mA
0.2 mA
40
0.1 mA
0
0
2
4
6
8
10
12
Collector-emitter voltage VCE (V)
102
hFE  IC
IC / IB = 10
10
1
Ta = 75°C
25°C
10 −1
−25°C
10 −2
10 −1
400
1
10
Collector current IC (mA)
SJH00024CED
102
VCE = 10 V
Forward current transfer ratio hFE
Ta = 25°C
IB = 1.0 mA
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
160
Ta = 75°C
300
25°C
−25°C
200
100
0
1
10
102
103
Collector current IC (mA)
5
UNR521x Series
IO  VIN
4
3
2
102
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
f = 1 MHz
IE = 0
Ta = 25°C
5
VIN  IO
104
Output current IO (µA)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob  VCB
6
102
10
VO = 0.2 V
Ta = 25°C
10
1
10 −1
1
0
10-1
1
1
0.4
102
10
0.6
0.8
1.0
1.2
1.4
10 −2
10 −1
Input voltage VIN (V)
Collector-base voltage VCB (V)
1
102
10
Output current IO (mA)
Characteristics charts of UNR5214
VCE(sat)  IC
Collector current IC (mA)
IB = 1.0 mA
120
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
80
0.3 mA
40
0.2 mA
0.1 mA
0
0
2
4
6
8
10
12
102
IC / IB = 10
10
1
Ta = 75°C
25°C
10 −1
200
25°C
−25°C
100
102
10
1
3
2
102
103
VIN  IO
102
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
4
10
Collector current IC (mA)
IO  VIN
104
Output current IO (µA)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Ta = 75°C
Collector current IC (mA)
f = 1 MHz
IE = 0
Ta = 25°C
102
10
VO = 0.2 V
Ta = 25°C
10
1
10 −1
1
0
10 −1
1
10
Collector-base voltage VCB (V)
6
300
0
1
Cob  VCB
5
VCE = 10 V
−25°C
10 −2
10 −1
Collector-emitter voltage VCE (V)
6
hFE  IC
400
Forward current transfer ratio hFE
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
160
102
1
0.4
0.6
0.8
1.0
1.2
Input voltage VIN (V)
SJH00024CED
1.4
10 −2
10 −1
1
10
Output current IO (mA)
102
UNR521x Series
Characteristics charts of UNR5215
VCE(sat)  IC
Collector current IC (mA)
120
0.7 mA
0.6 mA
0.5 mA
0.4 mA
80
0.3 mA
0.2 mA
40
0.1 mA
0
0
2
4
6
8
10
102
IC / IB = 10
10
1
Ta = 75°C
25°C
10 −1
1
Ta = 75°C
200
25°C
−25°C
100
0
102
10
1
4
3
2
102
103
VIN  IO
102
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
f = 1 MHz
IE = 0
Ta = 25°C
10
Collector current IC (mA)
IO  VIN
104
Output current IO (µA)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob  VCB
5
300
Collector current IC (mA)
Collector-emitter voltage VCE (V)
6
VCE = 10 V
−25°C
10 −2
10 −1
12
hFE  IC
400
Forward current transfer ratio hFE
Ta = 25°C
IB = 1.0 mA
0.9 mA
0.8 mA
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
160
102
10
VO = 0.2 V
Ta = 25°C
10
1
10 −1
1
0
10 −1
1
1
0.4
102
10
0.6
0.8
1.0
1.2
10 −2
10 −1
1.4
1
102
10
Output current IO (mA)
Input voltage VIN (V)
Collector-base voltage VCB (V)
Characteristics charts of UNR5216
VCE(sat)  IC
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
120
0.4 mA
80
0.3 mA
0.2 mA
40
0.1 mA
0
0
2
4
6
8
10
12
Collector-emitter voltage VCE (V)
102
hFE  IC
400
IC / IB = 10
10
1
Ta = 75°C
25°C
10 −1
VCE = 10 V
Forward current transfer ratio hFE
Collector current IC (mA)
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
160
Ta = 75°C
300
25°C
−25°C
200
100
−25°C
10 −2
10 −1
1
10
Collector current IC (mA)
SJH00024CED
102
0
1
10
102
103
Collector current IC (mA)
7
UNR521x Series
IO  VIN
4
3
2
102
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
f = 1 MHz
IE = 0
Ta = 25°C
5
VIN  IO
104
Output current IO (µA)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob  VCB
6
102
10
VO = 0.2 V
Ta = 25°C
10
1
10 −1
1
0
10 −1
1
1
0.4
102
10
0.6
0.8
1.0
1.2
10 −2
10 −1
1.4
Input voltage VIN (V)
Collector-base voltage VCB (V)
1
102
10
Output current IO (mA)
Characteristics charts of UNR5217
80
0.4 mA
0.3 mA
0.2 mA
60
40
20
0.1 mA
0
0
2
4
6
8
10
12
102
1
Ta = 75°C
25°C
10 −1
Ta = 75°C
25°C
−25°C
100
1
0
102
10
1
Collector current IC (mA)
104
4
3
2
10
102
103
Collector current IC (mA)
VIN  IO
102
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
f = 1 MHz
IE = 0
Ta = 25°C
Output current IO (µA)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
200
IO  VIN
102
10
VO = 0.2 V
Ta = 25°C
10
1
10 −1
1
0
10 −1
1
10
Collector-base voltage VCB (V)
8
300
−25°C
10 −2
10 −1
Cob  VCB
5
VCE = 10 V
10
Collector-emitter voltage VCE (V)
6
hFE  IC
400
IC / IB = 10
Forward current transfer ratio hFE
T = 25°C
a
IB =1 .0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
100
Collector current IC (mA)
VCE(sat)  IC
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
120
102
1
0.4
0.6
0.8
1.0
1.2
Input voltage VIN (V)
SJH00024CED
1.4
10 −2
10 −1
1
10
Output current IO (mA)
102
UNR521x Series
Characteristics charts of UNR5218
IC  VCE
VCE(sat)  IC
Collector current IC (mA)
200
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
160
120
0.6 mA
0.5 mA
0.4 mA
80
0.3 mA
40
0.2 mA
0
0.1 mA
0
2
4
6
8
10
Collector-emitter voltage VCE
IC / IB = 10
10
1
Ta = 75°C
25°C
10 −1
10 −2
10 −1
12
(V)
1
Ta = 75°C
80
25°C
−25°C
40
0
102
10
1
3
2
102
103
VIN  IO
102
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
4
10
Collector current IC (mA)
IO  VIN
104
Output current IO (µA)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
120
Collector current IC (mA)
f = 1 MHz
IE = 0
Ta = 25°C
5
VCE = 10 V
−25°C
Cob  VCB
6
hFE  IC
160
Forward current transfer ratio hFE
Ta = 25°C
102
Collector-emitter saturation voltage VCE(sat) (V)
240
102
10
VO = 0.2 V
Ta = 25°C
10
1
10−1
1
0
10-1
1
1
0.4
102
10
0.6
0.8
1.0
1.2
10−2
10−1
1.4
1
102
10
Output current IO (mA)
Input voltage VIN (V)
Collector-base voltage VCB (V)
Characteristics charts of UNR5219
VCE(sat)  IC
Collector current IC (mA)
200
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
160
120
0.5 mA
0.4 mA
0.3 mA
80
40
0.2 mA
0.1 mA
0
0
2
4
6
8
10
12
Collector-emitter voltage VCE (V)
102
hFE  IC
IC / IB = 10
10
1
Ta = 75°C
25°C
10 −1
10 −2
10 −1
160
VCE = 10 V
Forward current transfer ratio hFE
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
240
120
Ta = 75°C
80
25°C
−25°C
40
−25°C
0
1
10
Collector current IC (mA)
SJH00024CED
102
1
10
102
103
Collector current IC (mA)
9
UNR521x Series
IO  VIN
104
5
4
3
2
VIN  IO
102
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
f = 1 MHz
IE = 0
Ta = 25°C
Output current IO (µA)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob  VCB
6
102
10
VO = 0.2 V
Ta = 25°C
10
1
10 −1
1
0
10 −1
1
1
0.4
102
10
0.6
0.8
1.0
1.2
10 −2
10 −1
1.4
1
102
10
Output current IO (mA)
Input voltage VIN (V)
Collector-base voltage VCB (V)
Characteristics charts of UNR521D
VCE(sat)  IC
20
15
0.2 mA
0.1 mA
10
5
0
0
2
4
6
8
10
12
102
IC / IB = 10
10
1
−25°C
10 −2
10 −1
80
40
1
3
2
102
103
VIN  IO
102
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
4
10
Collector current IC (mA)
IO  VIN
104
Output current IO (µA)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
25°C
−25°C
102
10
Ta = 75°C
120
Collector current IC (mA)
f = 1 MHz
IE = 0
Ta = 25°C
102
10
VO = 0.2 V
Ta = 25°C
10
1
10 −1
1
0
10 −1
1
10
Collector-base voltage VCB (V)
10
VCE = 10 V
0
1
Cob  VCB
5
Ta = 75°C
25°C
10 −1
Collector-emitter voltage VCE (V)
6
hFE  IC
160
Forward current transfer ratio hFE
Collector current IC (mA)
Ta = 25°C
0.9 mA
0.8 mA 0.5 mA
0.7 mA
0.4 mA
25
0.6 mA
0.3 mA
IB = 1.0 mA
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
30
102
1
1.5
2.0
2.5
3.0
3.5
Input voltage VIN (V)
SJH00024CED
4.0
10 −2
10 −1
1
10
Output current IO (mA)
102
UNR521x Series
Characteristics charts of UNR521E
VCE(sat)  IC
Collector current IC (mA)
50
40
0.3 mA 0.2 mA
0.4 mA
0.5 mA
0.1 mA
30
20
10
0
0
2
4
6
8
10
12
102
IC / IB = 10
1
Ta = 75°C
25°C
10 −1
25°C
−25°C
80
40
1
0
102
10
1
Collector current IC (mA)
4
3
2
102
103
VIN  IO
102
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
f = 1MHz
IE = 0
Ta = 25°C
10
Collector current IC (mA)
IO  VIN
104
Output current IO (µA)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Ta = 75°C
120
−25°C
10 −2
10 −1
Cob  VCB
5
VCE = 10 V
10
Collector-emitter voltage VCE (V)
6
hFE  IC
160
Forward current transfer ratio hFE
IB = 1.0 mA 0.7 mA
Ta = 25°C
0.9 mA
0.6 mA
0.8 mA
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
60
102
10
VO = 0.2 V
Ta = 25°C
10
1
10 −1
1
0
10 −1
1
1
1.5
102
10
2.0
2.5
3.0
3.5
10 −2
10 −1
4.0
Input voltage VIN (V)
Collector-base voltage VCB (V)
1
10
102
Output current IO (mA)
Characteristics charts of UNR521F
VCE(sat)  IC
Collector current IC (mA)
200
0.9 mA
0.8 mA
0.7 mA
0.6 mA
160
120
IB = 1.0 mA
0.5 mA
80
0.4 mA
0.3 mA
40
0.2 mA
0.1 mA
0
0
2
4
6
8
10
Collector-emitter voltage VCE
12
(V)
102
hFE  IC
160
IC / IB = 10
10
Ta = 75°C
1
VCE = 10 V
Forward current transfer ratio hFE
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
240
25°C
10 −1
120
Ta = 75°C
80
25°C
−25°C
40
−25°C
10 −2
10 −1
1
10
Collector current IC (mA)
SJH00024CED
102
0
1
10
102
103
Collector current IC (mA)
11
UNR521x Series
IO  VIN
f = 1 MHz
IE = 0
Ta = 25°C
4
3
2
102
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
5
VIN  IO
104
Output current IO (µA)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob  VCB
6
102
10
VO = 0.2 V
Ta = 25°C
10
1
10 −1
1
0
10 −1
1
1
0.4
102
10
0.6
0.8
1.0
1.2
10 −2
10 −1
1.4
Input voltage VIN (V)
Collector-base voltage VCB (V)
1
102
10
Output current IO (mA)
Characteristics charts of UNR521K
VCE(sat)  IC
Collector current IC (mA)
200
160
IB = 1.2 mA
120
1.0 mA
0.8 mA
80
0.6 mA
0.4 mA
40
0.2 mA
0
0
2
4
6
8
10
102
IC / IB = 10
10
1
25°C
−25°C
10 −2
12
1
103
4
3
2
VO = 0.2 V
Ta = 25°C
10
1
10 −1
1
0
1
10
102
10 −2
10 −1
1
10
Output current IO (mA)
SJH00024CED
VCE = 10 V
200
160
Ta = 75°C
120
25°C
80
−25°C
40
0
1
10
102
Collector current IC (mA)
VIN  IO
Input voltage VIN (V)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
102
102
f = 1 MHz
IE = 0
Ta = 25°C
Collector-base voltage VCB (V)
12
10
Collector current IC (mA)
Cob  VCB
5
Ta = 75°C
10 −1
Collector-emitter voltage VCE (V)
6
hFE  IC
240
Forward current transfer ratio hFE
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
240
102
103
UNR521x Series
Characteristics charts of UNR521L
VCE(sat)  IC
Collector current IC (mA)
200
160
IB = 1.0 mA
0.8 mA
120
0.6 mA
80
0.4 mA
40
0.2 mA
0
0
2
4
6
8
10
12
102
IC / IB = 10
10
1
Ta = 75°C
25°C
10 −1
−25°C
10 −2
1
Collector-emitter voltage VCE (V)
200
25°C
120
−25°C
80
40
0
103
Ta = 75°C
160
1
10
102
103
Collector current IC (mA)
VIN  IO
Input voltage VIN (V)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
102
102
f = 1 MHz
IE = 0
Ta = 25°C
5
10
VCE = 10 V
Collector current IC (mA)
Cob  VCB
6
hFE  IC
240
Forward current transfer ratio hFE
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
240
4
3
2
VO = 0.2 V
Ta = 25°C
10
1
10 −1
1
0
10 −2
10 −1
102
10
1
1
102
10
Output current IO (mA)
Collector-base voltage VCB (V)
Characteristics charts of UNR521M
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
Collector current IC (mA)
160
0.5 mA
0.4 mA
0.3 mA
120
80
0.2 mA
40
0.1 mA
0
2
4
6
8
10
Collector-emitter voltage VCE
12
(V)
10
hFE  IC
IC / IB = 10
1
Ta = 75°C
25°C
10 −1
−25˚C
10 −2
10 −3
500
Forward current transfer ratio hFE
Ta = 25°C
200
0
VCE(sat)  IC
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
240
1
10
102
Collector current IC (mA)
SJH00024CED
103
VCE = 10 V
400
300
Ta = 75°C
25°C
200
−25°C
100
0
1
10
102
103
Collector current IC (mA)
13
UNR521x Series
IO  VIN
104
f = 1 MHz
IE = 0
Ta = 25°C
VIN  IO
102
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
4
3
2
103
Input voltage VIN (V)
Output current IO (µA)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob  VCB
5
102
10
10
1
10 −1
1
0
10 −1
1
10 −2
10 −1
1
102
10
0.4
0.6
Collector-base voltage VCB (V)
0.8
1.0
1.2
1.4
Input voltage VIN (V)
1
102
10
Output current IO (mA)
Characteristics charts of UNR521N
VCE(sat)  IC
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
120
80
0.3 mA
0.2 mA
40
0.1 mA
0
0
2
4
6
8
10
12
10
1
Ta = 75°C
10 −1
25°C
10 −2
1
Ta = 75°C
320
25°C
240
−25°C
160
80
0
103
1
Collector current IC (mA)
104
4
3
2
10
102
103
Collector current IC (mA)
VIN  IO
102
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
f = 1 MHz
IE = 0
Ta = 25°C
Output current IO (µA)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
400
IO  VIN
102
10
VO = 0.2 V
Ta = 25°C
10
1
10 −1
1
0
1
10
Collector-base voltage VCB (V)
14
102
10
Cob  VCB
5
VCE = 10 V
−25°C
Collector-emitter voltage VCE (V)
6
hFE  IC
480
IC / IB = 10
Forward current transfer ratio hFE
Collector current IC (mA)
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
160
102
1
0.4
0.6
0.8
1
1.2
Input voltage VIN (V)
SJH00024CED
1.4
10 −2
10 −1
1
10
Output current IO (mA)
102
UNR521x Series
Characteristics charts of UNR521T
VCE(sat)  IC
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
120
80
0.3 mA
0.2 mA
40
0.1 mA
0
0
2
4
6
8
10
10
IC / IB = 10
1
Ta = 75°C
10 −1
25°C
−25°C
10 −2
12
1
400
Ta = 75°C
320
25°C
240
−25°C
160
80
0
103
1
4
3
2
103
VIN  IO
102
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
f = 1 MHz
IE = 0
Ta = 25°C
102
10
Collector current IC (mA)
IO  VIN
104
Output current IO (µA)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob  VCB
5
102
10
VCE = 10 V
Collector current IC (mA)
Collector-emitter voltage VCE (V)
6
hFE  IC
480
Forward current transfer ratio hFE
Collector current IC (mA)
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
160
102
10
VO = 0.2 V
Ta = 25°C
10
1
10 −1
1
0
1
1
0.4
102
10
0.6
0.8
1
1.2
10 −2
10 −1
1.4
1
10
102
Output current IO (mA)
Input voltage VIN (V)
Collector-base voltage VCB (V)
Characteristics charts of UNR521V
VCE(sat)  IC
IB = 1.0 mA
120
0.9 mA
0.8 mA
0.7 mA
80
0.6 mA
0.5 mA
40
0.4 mA
0
0
2
4
6
8
0.3 mA
0.2 mA
10
12
Collector-emitter voltage VCE (V)
10
hFE  IC
IC / IB = 10
1
Ta = 75°C
10 −1
25°C
−25°C
10 −2
240
Forward current transfer ratio hFE
Collector current IC (mA)
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
160
1
10
102
Collector current IC (mA)
SJH00024CED
103
VCE = 10 V
200
160
Ta = 75°C
120
25°C
80
−25°C
40
0
1
10
102
103
Collector current IC (mA)
15
UNR521x Series
IO  VIN
4
3
2
102
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
f = 1 MHz
IE = 0
Ta = 25°C
5
VIN  IO
104
Output current IO (µA)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob  VCB
6
102
10
VO = 0.2 V
Ta = 25°C
10
1
10 −1
1
0
1
1
0.4
102
10
0.6
0.8
1
1.2
10 −2
10 −1
1.4
1
102
10
Output current IO (mA)
Input voltage VIN (V)
Collector-base voltage VCB (V)
Characteristics charts of UNR521Z
VCE(sat)  IC
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
120
80
0.3 mA
0.2 mA
40
0.1 mA
0
0
2
4
6
8
10
12
10
IC / IB = 10
1
Ta = 75°C
10 −1
25°C
−25°C
10 −2
1
Collector-emitter voltage VCE (V)
240
25°C
−25°C
160
80
1
3
2
10
102
103
Collector current IC (mA)
VIN  IO
102
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
Output current IO (µA)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Ta = 75°C
320
IO  VIN
104
4
102
10
VO = 0.2 V
Ta = 25°C
10
1
10 −1
1
0
1
10
Collector-base voltage VCB (V)
16
400
0
103
VCE = 10 V
Collector current IC (mA)
f = 1 MHz
IE = 0
Ta = 25°C
5
102
10
Cob  VCB
6
hFE  IC
480
Forward current transfer ratio hFE
Collector current IC (mA)
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
160
102
1
0.4
0.6
0.8
1
1.2
Input voltage VIN (V)
SJH00024CED
1.4
10 −2
10 −1
1
10
Output current IO (mA)
102
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and semiconductors described in this material
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the products or technical information described in this material and controlled under the "Foreign Exchange
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applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
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Consult our sales staff in advance for information on the following applications:
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required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
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(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
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2003 SEP