Transistors with built-in Resistor UNR511x Series (UN511x Series) Silicon PNP epitaxial planar type (0.425) Unit: mm For digital circuits 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through the tape/ magazine packing 0.9±0.1 3 ■ Features 2 0.2±0.1 1 (0.65) (0.65) 1.3±0.1 ■ Resistance by Part Number Marking symbol UNR5110 (UN5110) 6L UNR5111 (UN5111) 6A UNR5112 (UN5112) 6B UNR5113 (UN5113) 6C UNR5114 (UN5114) 6D UNR5115 (UN5115) 6E UNR5116 (UN5116) 6F UNR5117 (UN5117) 6H UNR5118 (UN5118) 6I UNR5119 (UN5119) 6K UNR511D (UN511D) 6M UNR511E (UN511E) 6N UNR511F (UN511F) 6O UNR511H (UN511H) 6P UNR511L (UN511L) 6Q UNR511M (UN511M) EI UNR511N (UN511N) EW UNR511T (UN511T) EY UNR511V (UN511V) FC UNR511Z (UN511Z) FE (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ 47 kΩ 47 kΩ 4.7 kΩ 2.2 kΩ 4.7 kΩ 2.2 kΩ 4.7 kΩ 22 kΩ 2.2 kΩ 4.7 kΩ (R2) 10 kΩ 22 kΩ 47 kΩ 47 kΩ 5.1 kΩ 10 kΩ 10 kΩ 22 kΩ 10 kΩ 10 kΩ 4.7 kΩ 47 kΩ 47 kΩ 47 kΩ 2.2 kΩ 22 kΩ 0 to 0.1 • • • • • • • • • • • • • • • • • • • • 2.0±0.2 10˚ 1: Base 2: Emitter 3: Collector EIAJ: SC-70 SMini3-G1 Package Internal Connection R1 B C R2 E ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −50 V Collector-emitter voltage (Base open) VCEO −50 V Collector current IC −100 mA Total power dissipation PT 150 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note) The part numbers in the parenthesis show conventional part number. Publication date: December 2003 SJH00022BED 1 UNR511x Series ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −50 Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −50 Collector-base cutoff current (Emitter open) ICBO VCB = −50 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = −50 V, IB = 0 − 0.5 µA Emitter-base IEBO VEB = −6 V, IC = 0 − 0.01 mA UNR5110/5115/5116/5117 Conditions Typ Max V − 0.1 − 0.1 (Collector open) UNR5112/5114/511D/ 511E/511M/511N/511T − 0.2 transfer ratio UNR511Z − 0.4 UNR5111 − 0.5 UNR511F/511H −1.0 UNR5119 −1.5 UNR5118/511L/511V −2.0 hFE VCE = −10 V, IC = −5 mA 6 UNR5118/511L 20 UNR5119/511D/511F/511H 30 UNR5111 35 UNR5112/511E 60 UNR511Z 60 UNR5113/5114/511M 80 UNR511N/511T 80 UNR5110 */5115 */5116 */5117 * Collector-emitter saturation voltage VOH VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ Output voltage low-level VOL VCC = −5 V, VB = −2.5 V, RL = 1 kΩ UNR5113 VCC = −5 V, VB = −3.5 V, RL = 1 kΩ UNR511D VCC = −5 V, VB = −10 V, RL = 1 kΩ UNR511E VCC = −5 V, VB = −6 V, RL = 1 kΩ fT UNR5116 400 460 − 0.25 −4.9 − 0.2 VCB = −10 V, IE = 1 mA, f = 200 MHz 80 VCB = −10 V, IE = 2 mA, f = 200 MHz 150 −30% UNR5118 resistance UNR5119 1.0 UNR511H/511M/511V 2.2 UNR5116/511F/511L 511N/511Z 4.7 UNR5111/5114/5115 10 UNR5112/5117/511T 22 UNR5110/5113/511D/511E 47 UNR511M UNR511N V V Input ratio IC = −10 mA, IB = −1.5 mA UNR511V Resistance µA 200 IC = −10 mA, IB = − 0.3 mA Output voltage high-level Transition frequency 20 160 VCE(sat) Unit V cutoff current UNR5113 Forward current UNR511V R1 R1/R2 0.51 +30% 0.08 0.10 0.21 SJH00022BED kΩ 0.1 UNR511Z V MHz 0.047 UNR5118/5119 2 Min 0.12 UNR511x Series ■ Electrical Characteristics (continued) Ta = 25°C ± 3°C Min Typ Max Resistance Parameter UNR5114 Symbol Conditions 0.17 0.21 0.25 ratio UNR511H 0.17 0.22 0.27 UNR511T Unit 0.47 UNR511F 0.37 UNR511V 0.47 0.57 1.0 UNR5111/5112/5113/511L 0.8 1.0 1.2 UNR511E 1.70 2.14 2.60 UNR511D 3.7 4.7 5.7 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R S No-rank hFE 160 to 260 210 to 340 290 to 460 160 to 460 Common characteristics chart PT Ta Total power dissipation PT (mW) 250 200 150 100 50 0 0 40 80 120 160 Ambient temperature Ta (°C) Characteristics charts of UNR5110 VCE(sat) IC −60 − 0.2 mA −40 − 0.1 mA −20 0 0 −2 −4 −6 −8 −10 −12 Collector-emitter voltage VCE (V) Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (mA) Ta = 25°C IB = −1.0 mA − 0.9 mA −100 − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA −80 − 0.4 mA − 0.3 mA −100 hFE IC IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 − 0.01 −0.1 400 −25°C −1 −10 Collector current IC (mA) SJH00022BED VCE = –10 V Forward current transfer ratio hFE IC VCE −120 −100 300 Ta = 75°C 200 25°C −25°C 100 0 −1 −10 −100 −1 000 Collector current IC (mA) 3 UNR511x Series IO VIN 4 3 2 −100 VO = −5 V Ta = 25°C −103 Input voltage VIN (V) 5 VIN IO −104 f = 1 MHz IE = 0 Ta = 25°C Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 6 −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −1 − 0.4 −100 Collector-base voltage VCB (V) − 0.6 − 0.8 −1.0 −1.2 −1.4 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR5111 IC VCE VCE(sat) IC − 0.9 mA Collector current IC (mA) −120 − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA −80 − 0.4 mA − 0.3 mA −40 − 0.2 mA − 0.1 mA 0 −2 0 −4 −6 −8 −10 −12 −10 −1 − 0.1 −25°C − 0.01 − 0.1 −1 −25°C 80 40 0 −1 −100 4 3 2 −10 −100 −1 000 Collector current IC (mA) VIN IO VO = −5 V Ta = 25°C −103 −100 Input voltage VIN (V) Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 25°C 120 IO VIN −104 f = 1 MHz IE = 0 Ta = 25°C −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −100 Collector-base voltage VCB (V) 4 −10 Ta = 75°C VCE = −10 V Collector current IC (mA) Cob VCB 5 Ta = 75°C 25°C Collector-emitter voltage VCE (V) 6 hFE IC 160 IC / IB = 10 Forward current transfer ratio hFE Ta = 25°C IB = −1.0 mA Collector-emitter saturation voltage VCE(sat) (V) −100 −160 −1 − 0.4 − 0.6 − 0.8 −1.0 −1.2 Input voltage VIN (V) SJH00022BED −1.4 − 0.01 − 0.1 −1 −10 Output current IO (mA) −100 UNR511x Series Characteristics charts of UNR5112 VCE(sat) IC Ta = 25°C IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA Collector current IC (mA) −120 − 0.5 mA −80 − 0.4 mA − 0.3 mA − 0.2 mA −40 − 0.1 mA 0 −2 0 −4 −6 −8 −10 Collector-emitter voltage VCE −12 Collector-emitter saturation voltage VCE(sat) (V) −100 IC / IB = 10 −10 −1 − 0.1 −25°C − 0.01 − 0.1 −1 300 Ta = 75°C 200 25°C −25°C 100 0 −1 −100 3 2 −100 −1 000 VIN IO −100 VO = −5 V Ta = 25°C −103 Input voltage VIN (V) 4 −10 Collector current IC (mA) IO VIN −104 Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob −10 VCE = −10 V Collector current IC (mA) (V) f = 1 MHz IE = 0 Ta = 25°C 5 Ta = 75°C 25°C Cob VCB 6 hFE IC 400 Forward current transfer ratio hFE IC VCE −160 −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −1 − 0.4 −100 Collector-base voltage VCB (V) − 0.6 − 0.8 −1.0 −1.2 −1.4 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR5113 VCE(sat) IC − 0.9 mA − 0.8 mA − 0.7 mA −120 Collector current IC (mA) Ta = 25°C − 0.6 mA − 0.5 mA − 0.4 mA −80 − 0.3 mA − 0.2 mA −40 − 0.1 mA 0 0 −2 −4 −6 −8 −10 −12 Collector-emitter voltage VCE (V) Collector-emitter saturation voltage VCE(sat) (V) IB = −1.0 mA −100 hFE IC IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 − 0.01 − 0.1 400 −25°C −1 −10 Collector current IC (mA) SJH00022BED VCE = −10 V Forward current transfer ratio hFE IC VCE −160 −100 Ta = 75°C 300 25°C 200 −25°C 100 0 −1 −10 −100 −1 000 Collector current IC (mA) 5 UNR511x Series IO VIN 4 3 2 −100 VO = −5 V Ta = 25°C −103 Input voltage VIN (V) 5 VIN IO −104 f = 1 MHz IE = 0 Ta = 25°C Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 6 −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −1 − 0.4 −100 − 0.6 − 0.8 −1.0 −1.2 −1.4 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) Input voltage VIN (V) Collector-base voltage VCB (V) Characteristics charts of UNR5114 IC VCE VCE(sat) IC Collector current IC (mA) −120 − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA −80 − 0.4 mA − 0.3 mA − 0.2 mA −40 − 0.1 mA 0 −2 0 −4 −6 −8 −10 −12 −10 −1 Ta = 75°C 25°C − 0.1 −1 Ta = 75°C 200 25°C −25°C 100 0 −1 −100 3 2 −100 −1 000 VIN IO VO = −5 V Ta = 25°C −103 −1 000 VO = − 0.2 V Ta = 25°C −100 Input voltage VIN (V) 4 −10 Collector current IC (mA) IO VIN Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob −10 −104 f = 1 MHz IE = 0 Ta = 25°C −102 −10 −10 −1 1 0 − 0.1 −1 −10 −100 Collector-base voltage VCB (V) 6 300 Collector current IC (mA) Cob VCB 5 VCE = −10 V −25°C − 0.01 − 0.1 Collector-emitter voltage VCE (V) 6 hFE IC 400 IC / IB = 10 Forward current transfer ratio hFE Ta = 25°C IB = −1.0 mA Collector-emitter saturation voltage VCE(sat) (V) −100 −160 −1 − 0.4 − 0.6 − 0.8 −1.0 Input voltage VIN SJH00022BED −1.2 (V) −1.4 − 0.1 − 0.1 −1 −10 Output current IO (mA) −100 UNR511x Series Characteristics charts of UNR5115 VCE(sat) IC Ta = 25°C IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA Collector current IC (mA) −120 − 0.6 mA − 0.5 mA − 0.4 mA −80 − 0.3 mA − 0.2 mA −40 − 0.1 mA 0 −2 0 −4 −6 −8 −10 −12 Collector-emitter saturation voltage VCE(sat) (V) −100 IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 −1 −10 Ta = 75°C 200 −25°C 0 −1 −100 4 3 2 −10 −100 −1 000 Collector current IC (mA) VIN IO VO = −5 V Ta = 25˚C −103 −100 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C 25°C 100 IO VIN −104 Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 300 Collector current IC (mA) Cob VCB 5 VCE = −10 V −25°C − 0.01 −0.1 Collector-emitter voltage VCE (V) 6 hFE IC 400 Forward current transfer ratio hFE IC VCE −160 −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −1 − 0.4 −100 − 0.6 − 0.8 −1.0 −1.2 −1.4 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) Input voltage VIN (V) Collector-base voltage VCB (V) Characteristics charts of UNR5116 VCE(sat) IC IB = −1.0 mA − 0.9 mA − 0.8 mA −120 Collector current IC (mA) Ta = 25°C − 0.7 mA − 0.6 mA − 0.5 mA −80 − 0.4 mA − 0.3 mA − 0.2 mA −40 − 0.1 mA 0 0 −2 −4 −6 −8 −10 −12 Collector-emitter voltage VCE (V) Collector-emitter saturation voltage VCE(sat) (V) −100 hFE IC IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 − 0.01 − 0.1 400 VCE = −10 V Forward current transfer ratio hFE IC VCE −160 300 Ta = 75°C 200 25°C −25°C 100 −25°C −1 −10 Collector current IC (mA) SJH00022BED −100 0 −1 −10 −100 −1 000 Collector current IC (mA) 7 UNR511x Series IO VIN 4 3 2 VO = −5 V Ta = 25°C −103 −100 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C 5 VIN IO −104 Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 6 −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −1 − 0.4 −100 Collector-base voltage VCB (V) − 0.6 − 0.8 −1.0 −1.2 −1.4 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR5117 VCE(sat) IC IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA − 0.4 mA Collector current IC (mA) −100 −80 −60 − 0.3 mA −40 − 0.2 mA −20 0 − 0.1 mA −2 0 −4 −6 −8 −10 −12 Collector-emitter saturation voltage VCE(sat) (V) Ta = 25°C −100 IC / IB = 10 −10 Ta = 75°C −1 25°C − 0.1 −25°C − 0.01 − 0.1 −1 3 2 Ta = 75°C 200 25°C 100 0 −1 −100 −25°C −10 −100 −1 000 Collector current IC (mA) VIN IO VO = −5 V Ta = 25°C −103 −100 Input voltage VIN (V) 4 −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 −0.1 −1 −10 −100 Collector-base voltage VCB (V) 8 300 IO VIN −104 f = 1 MHz IE = 0 Ta = 25°C Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 5 −10 VCE = −10 V Collector current IC (mA) Collector-emitter voltage VCE (V) 6 hFE IC 400 Forward current transfer ratio hFE IC VCE −120 −1 − 0.4 − 0.6 − 0.8 −1.0 −1.2 Input voltage VIN (V) SJH00022BED −1.4 − 0.01 − 0.1 −1 −10 Output current IO (mA) −100 UNR511x Series Characteristics charts of UNR5118 IC VCE VCE(sat) IC −100 Collector current IC (mA) −200 IB = − 1.0 mA − 0.9 mA −160 − 0.8 mA − 0.7 mA −120 − 0.6 mA − 0.5 mA − 0.4 mA − 0.3 mA −80 −40 − 0.2 mA − 0.1 mA 0 −2 0 −4 −6 −8 −10 −12 IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 − 0.01 − 0.1 −1 −10 Ta = 75°C 80 40 0 −1 −100 4 3 2 −10 −100 −1 000 Collector current IC (mA) VIN IO −100 VO = −5 V Ta = 25°C −103 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C 25°C −25°C IO VIN −104 Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 120 Collector current IC (mA) Cob VCB 5 VCE = −10 V −25°C Collector-emitter voltage VCE (V) 6 hFE IC 160 Forward current transfer ratio hFE Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) −240 −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −1 − 0.4 −100 − 0.6 − 0.8 −1.0 −1.2 −1.4 − 0.01 − 0.1 Input voltage VIN (V) Collector-base voltage VCB (V) −1 −10 −100 Output current IO (mA) Characteristics charts of UNR5119 VCE(sat) IC Ta = 25°C Collector current IC (mA) −200 IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA −160 −120 −80 − 0.6 mA − 0.5 mA − 0.4 mA − 0.3 mA − 0.2 mA − 0.1 mA −40 0 0 −2 −4 −6 −8 −10 −12 Collector-emitter voltage VCE (V) Collector-emitter saturation voltage VCE(sat) (V) −100 hFE IC IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 − 0.01 − 0.1 160 VCE = −10 V Forward current transfer ratio hFE IC VCE −240 120 Ta = 75°C 80 25°C −25°C 40 −25°C −1 −10 Collector current IC (mA) SJH00022BED −100 0 −1 −10 −100 −1 000 Collector current IC (mA) 9 UNR511x Series IO VIN 4 3 2 VO = −5 V Ta = 25°C −103 −100 Input voltage VIN (V) 5 VIN IO −104 f = 1 MHz IE = 0 Ta = 25°C Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 6 −102 −10 VO = −0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −1 − 0.4 −100 − 0.6 − 0.8 −1.0 −1.2 −1.4 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) Input voltage VIN (V) Collector-base voltage VCB (V) Characteristics charts of UNR511D Collector current IC (mA) −50 Ta = 25˚C −40 − 0.3 mA −30 − 0.2 mA − 0.7 mA − 0.6 mA − 0.5 mA − 0.4 mA −20 − 0.1 mA −10 0 −2 0 −4 −6 −8 −10 −12 Collector-emitter saturation voltage VCE(sat) (V) IB = − 1.0 mA − 0.9 mA − 0.8 mA VCE(sat) IC −100 −10 −1 Ta = 75°C 25°C − 0.1 − 0.01 − 0.1 −1 4 3 2 −25°C 40 0 −1 −100 −10 −100 −1 000 Collector current IC (mA) VIN IO VO = −5 V Ta = 25°C −103 −100 Input voltage VIN (V) Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 25°C 80 IO VIN −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −100 Collector-base voltage VCB (V) 10 −10 −104 f = 1 MHz IE = 0 Ta = 25°C Ta = 75°C 120 Collector current IC (mA) Cob VCB 5 VCE = −10 V −25°C Collector-emitter voltage VCE (V) 6 hFE IC 160 IC / IB = 10 Forward current transfer ratio hFE IC VCE −60 −1 −1.5 −2.0 −2.5 −3.0 −3.5 Input voltage VIN (V) SJH00022BED −4.0 − 0.01 − 0.1 −1 −10 Output current IO (mA) −100 UNR511x Series Characteristics charts of UNR511E −40 − 0.3 mA −30 − 0.6 mA − 0.5 mA − 0.4 mA −20 − 0.2 mA − 0.1 mA −10 0 −2 0 −4 −6 −8 −10 −12 Collector-emitter saturation voltage VCE(sat) (V) IB = −1.0 mA Ta = 25°C − 0.9 mA − 0.8 mA − 0.7 mA −50 Collector current IC (mA) VCE(sat) IC −100 IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 −25°C − 0.01 − 0.1 −1 300 200 Ta = 75°C 100 0 −1 −100 4 3 2 −10 −100 −1 000 VIN IO VO = −5 V Ta = 25°C −103 −100 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C 25°C −25°C Collector current IC (mA) IO VIN −104 Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 5 −10 VCE = −10 V Collector current IC (mA) Collector-emitter voltage VCE (V) 6 hFE IC 400 Forward current transfer ratio hFE IC VCE −60 −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −1 −1.5 −100 −2.0 −2.5 −3.0 −3.5 −4.0 − 0.01 − 0.1 Input voltage VIN (V) Collector-base voltage VCB (V) −1 −10 −100 Output current IO (mA) Characteristics charts of UNR511F IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA −160 −120 − 0.5 mA −80 − 0.4 mA − 0.3 mA −40 0 − 0.2 mA 0 −2 −4 −6 −8 − 0.1 mA −10 −12 Collector-emitter voltage VCE (V) Collector-emitter saturation voltage VCE(sat) (V) Ta = 25°C −200 Collector current IC (mA) VCE(sat) IC −100 hFE IC IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 − 0.01 − 0.1 160 VCE = −10 V Forward current transfer ratio hFE IC VCE −240 120 Ta = 75°C 25°C 80 −25°C 40 −25°C −1 −10 Collector current IC (mA) SJH00022BED −100 0 −1 −10 −100 −1 000 Collector current IC (mA) 11 UNR511x Series IO VIN 4 3 2 VO = −5 V Ta = 25°C −103 −100 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C 5 VIN IO −104 Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 6 −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −1 − 0.4 −100 − 0.6 − 0.8 −1.0 −1.2 −1.4 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) Input voltage VIN (V) Collector-base voltage VCB (V) Characteristics charts of UNR511H IC VCE VCE(sat) IC −100 Collector current IC (mA) −100 −80 IB = − 0.5 mA − 0.4 mA −60 − 0.3 mA −40 − 0.2 mA −20 − 0.1 mA 0 −2 0 −4 −6 −8 −10 −12 −10 −1 Ta = 75°C 25°C −0.1 −25°C −0.01 −1 4 3 2 −1 000 −100 0 −1 −10 −100 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 − 0.01 − 0.1 −1 −10 Output current IO (mA) SJH00022BED VCE = −10 V 200 160 Ta = 75°C 120 25°C 80 −25°C 40 0 −0.1 −1 −10 Collector current IC (mA) 1 Collector-base voltage VCB (V) 12 −100 VIN IO f = 1 MHz IE = 0 Ta = 25°C Input voltage VIN (V) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 5 −10 Collector current IC (mA) Collector-emitter voltage VCE (V) 6 hFE IC 240 IC / IB = 10 Forward current transfer ratio hFE Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) −120 −100 −100 UNR511x Series Characteristics charts of UNR511L VCE(sat) IC Ta = 25°C Collector current IC (mA) −200 −160 IB = −1.0 mA −120 − 0.8 mA − 0.6 mA −80 − 0.4 mA −40 − 0.2 mA 0 0 –2 –4 –6 –8 –10 –12 Collector-emitter saturation voltage VCE(sat) (V) −100 −1 − 0.01 −1 −25°C −10 −100 160 120 80 Ta = 75°C 25°C −25°C 40 0 −1 −1 000 VCE = −10 V 200 Collector current IC (mA) −10 −100 −1 000 Collector current IC (mA) VIN IO −100 f = 1 MHz IE = 0 Ta = 25°C Input voltage VIN (V) Collector output capacitance C (pF) (Common base, input open circuited) ob Ta = 75°C 25°C − 0.1 Cob VCB 5 IC / IB = 10 −10 Collector-emitter voltage VCE (V) 6 hFE IC 240 Forward current transfer ratio hFE IC VCE −240 4 3 2 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 −1 −10 −100 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) Collector-base voltage VCB (V) Characteristics charts of UNR511M IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA 160 − 0.5 mA 80 − 0.4 mA − 0.3 mA 40 − 0.2 mA − 0.1 mA 0 −2 −4 −6 −8 −10 −12 Collector-emitter voltage VCE (V) hFE IC Ta = 75°C 25°C −25°C − 0.01 − 0.001 −1 500 IC / IB = 10 −1 − 0.1 120 0 −10 Forward current transfer ratio hFE Ta = 25°C 200 Collector current IC (mA) VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) IC VCE 240 −10 −100 Collector current IC (mA) SJH00022BED −1 000 VCE = −10 V 400 300 Ta = 75°C 200 25°C −25°C 100 0 −1 −10 −100 −1 000 Collector current IC (mA) 13 UNR511x Series IO VIN VIN IO 10−4 6 4 10−3 Input voltage VIN (V) 8 −100 VO = −5 V Ta = 25°C f = 1 MHz IE = 0 Ta = 25°C Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 10 10−2 10−1 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 2 0 − 0.1 −1 −10 1 − 0.4 −100 − 0.6 − 0.8 −1.0 −1.2 −1.4 − 0.01 − 0.1 Input voltage VIN (V) Collector-base voltage VCB (V) −1 −10 −100 Output current IO (mA) Characteristics charts of UNR511N VCE(sat) IC IB = −1.0 mA Collector current IC (mA) −150 − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA −100 − 0.5 mA − 0.4 mA −50 − 0.3 mA − 0.2 mA − 0.1 mA 0 −2 0 −4 −6 −8 −10 −12 −10 IC / IB = 10 −1 Ta = 75°C − 0.1 25°C −25°C − 0.01 −1 Collector-emitter voltage VCE (V) −10 25°C 3 2 −25°C 150 100 50 0 −1 −1 000 −10 −100 −1 000 Collector current IC (mA) VIN IO VO = −5 V Ta = 25°C −103 −100 Input voltage VIN (V) Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 4 −102 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 –10 1 0 –1 –10 –100 Collector-base voltage VCB (V) 14 Ta = 75°C 200 IO VIN −104 f = 1 MHz IE = 0 Ta = 25°C 5 −100 VCE = −10 V 250 Collector current IC (mA) Cob VCB 6 hFE IC 300 Forward current transfer ratio hFE Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) IC VCE −200 –1 − 0.4 − 0.6 − 0.8 −1.0 −1.2 Input voltage VIN (V) SJH00022BED −1.4 − 0.01 − 0.1 −1 −10 Output current IO (mA) −100 UNR511x Series Characteristics charts of UNR511T IC VCE VCE(sat) IC −150 IB = −1.0 mA – 0.9 mA – 0.8 mA – 0.7 mA – 0.6 mA – 0.5 mA −100 − 0.4 mA −50 − 0.3 mA − 0.2 mA − 0.1 mA 0 −2 0 −4 −6 −8 −10 −12 −1 Ta = 75°C − 0.1 − 0.01 −1 −10 −100 Ta = 75°C 200 25°C 150 −25°C 100 50 0 −1 −1 000 VCE = −10 V 250 −10 −100 −1 000 Collector current IC (mA) Collector current IC (mA) IO VIN VIN IO VO = −5 V Ta = 25°C −103 −100 Input voltage VIN (V) Output current IO (µA) 25°C −25°C Collector-emitter voltage VCE (V) −104 hFE IC 300 IC / IB = 10 Forward current transfer ratio hFE Collector current IC (mA) Ta = 25°C −10 Collector-emitter saturation voltage VCE(sat) (V) −200 −102 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 −10 −1 − 0.4 − 0.6 − 0.8 −1 −1.2 −1.4 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR511V − 0.9 mA − 0.8 mA −8 − 0.7 mA − 0.6 mA −6 − 0.5 mA −4 − 0.4 mA − 0.3 mA −2 0 − 0.2 mA − 0.1 mA 0 −2 −4 −6 −8 −10 −12 Collector-emitter voltage VCE (V) −10 hFE IC IC / IB = 10 −1 Ta = 75°C 25°C − 0.1 − 0.01 −1 12 Forward current transfer ratio hFE Ta = 25°C IB = −1.0 mA −10 Collector current IC (mA) VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) IC VCE −12 −25°C −10 −100 Collector current IC (mA) SJH00022BED −1 000 10 VCE = −10 V Ta = 75°C 25°C 8 6 −25°C 4 2 0 −1 −10 −100 −1 000 Collector current IC (mA) 15 UNR511x Series IO VIN VIN IO VO = −5 V Ta = 25°C −100 VO = − 0.2 V Ta = 25°C −10 −103 Input voltage VIN (V) Output current IO (µA) −104 −102 −1 − 0.1 −10 −1 − 0.4 − 0.6 − 0.8 −1.0 −1.2 −1.4 − 0.01 − 0.1 Input voltage VIN (V) −1 −10 −100 Output current IO (mA) Characteristics charts of UNR511Z VCE(sat) IC Collector current IC (mA) −150 IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA −100 − 0.4 mA −50 − 0.3 mA − 0.2 mA 0 − 0.1 mA −2 0 −4 −6 −8 −10 −12 −10 −1 Ta = 75°C − 0.1 25°C −25°C − 0.01 −1 Collector-emitter voltage VCE (V) −10 3 2 −25°C 100 50 −10 −100 −1 000 Collector current IC (mA) VIN IO VO = – 5 V Ta = 25°C −103 −100 Input voltage VIN (V) Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 4 −102 −10 VO = 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 −1 −10 −100 Collector-base voltage VCB (V) 16 25°C 150 0 −1 −1 000 Ta = 75°C 200 IO VIN −104 f = 1 MHz IE = 0 Ta = 25°C 5 −100 VCE = −10 V 250 Collector current IC (mA) Cob VCB 6 hFE IC 300 IC / IB = 10 Forward current transfer ratio hFE Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) IC VCE −200 –1 − 0.4 − 0.6 − 0.8 −1 −1.2 Input voltage VIN (V) SJH00022BED −1.4 − 0.01 − 0.1 −1 −10 Output current IO (mA) −100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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