Transistors with built-in Resistor UNR212x Series (UN212x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing 5˚ 1.50+0.25 –0.05 ■ Features 2.8+0.2 –0.3 3 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 ■ Resistance by Part Number 1.1+0.3 –0.1 1.1+0.2 –0.1 (R2) 2.2 kΩ 4.7 kΩ 10 kΩ 10 kΩ 5 kΩ 4.6 kΩ 0 to 0.1 • UNR2121 • UNR2122 • UNR2123 • UNR2124 • UNR212X • UNR212Y 10˚ Marking Symbol (R1) (UN2121) 7A 2.2 kΩ (UN2122) 7B 4.7 kΩ (UN2123) 7C 10 kΩ (UN2124) 7D 2.2 kΩ (UN212X) 7I 0.27 kΩ (UN212Y) 7Y 3.1 kΩ 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package Internal Connection ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −50 V Collector-emitter voltage (Base open) VCEO −50 V Collector current IC −500 mA Total power dissipation PT 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C R1 C B R2 E ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 Conditions Min −50 Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −50 Collector-base cutoff current (Emitter open) ICBO VCB = −50 V, IE = 0 ICEO VCE = −50 V, IB = 0 IEBO VEB = −6 V, IC = 0 UNR2121 V V −1.0 −5 −2 (Collector open) UNR2123/2124 −1 transfer ratio µA µA − 0.5 cutoff current UNR2122/212X/212Y Forward current UNR2121 Unit − 0.1 UNR212X Emitter-base Max −1.0 UNR212X Collector-emitter cutoff current (Base open) Typ hFE VCE = −10 V, IC = −5 mA UNR2122/212Y 40 mA 50 UNR2123/2124 60 UNR212X 20 Note) The part numbers in the parenthesis show conventional part number. Publication date: December 2003 SJH00008CED 1 UNR212x Series ■ Electrical Characteristics (continued) Ta = 25°C ± 3°C Parameter Symbol Collector-emitter saturation voltage VCE(sat) Conditions Min Typ IC = −100 mA, IB = −5 mA Max Unit − 0.25 V IC = −10 mA, IB = − 0.3 mA UNR212X/212Y Output voltage high-level VOH VCC = −5 V, VB = − 0.5 V, RL = 500 Ω Output voltage low-level VOL VCC = −5 V, VB = −3.5 V, RL = 500 Ω Transition frequency fT VCB = −10 V, IE = 50 mA, f = 200 MHz Input resistance UNR2121/2124 R1 −4.9 V − 0.2 200 −30% UNR2122 2.2 V MHz +30% kΩ 4.7 UNR2123 10 UNR212X 0.27 UNR212Y 3.1 Resistance ratio R1/R2 0.8 1.0 1.2 UNR2124 0.17 0.22 0.27 UNR212X 0.043 0.054 0.065 UNR212Y 0.53 0.67 0.81 Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart PT Ta Total power dissipation PT (mW) 250 200 150 100 50 0 0 40 80 120 160 Ambient temperature Ta (°C) 2 SJH00008CED UNR212x Series Characteristics charts of UNR2121 VCE(sat) IC Collector current IC (mA) −200 IB = −1.0 mA −160 −120 − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA −80 − 0.4 mA − 0.3 mA − 0.1 mA 0 −2 0 −4 −6 −8 −10 −12 −1 Ta = 75°C 25°C 300 Ta = 75°C 200 100 25°C −10 −25°C −100 0 −1 −1 000 Collector current IC (mA) −10 8 6 4 −1 000 VIN IO VO = −5 V Ta = 25°C −103 −100 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C −100 Collector current IC (mA) IO VIN −104 Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob VCE = −10 V −25°C − 0.01 −1 Cob VCB 10 400 IC / IB = 10 −10 Collector-emitter voltage VCE (V) 12 hFE IC − 0.1 − 0.2 mA −40 Collector-emitter saturation voltage VCE(sat) (V) Ta = 25°C −100 Forward current transfer ratio hFE IC VCE −240 −102 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 −10 2 0 − 0.1 −1 −10 −1 − 0.4 −100 Collector-base voltage VCB (V) − 0.6 − 0.8 −1.0 −1.2 −1.4 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR2122 VCE(sat) IC Ta = 25°C Collector current IC (mA) −250 IB = −1.0 mA − 0.9 mA −200 − 0.8 mA − 0.7 mA −150 − 0.6 mA − 0.5 mA − 0.4 mA − 0.3 mA −100 − 0.2 mA −50 − 0.1 mA 0 0 −2 −4 −6 −8 −10 −12 Collector-emitter voltage VCE (V) Collector-emitter saturation voltage VCE(sat) (V) −100 hFE IC IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 − 0.01 −1 160 −25°C −10 −100 Collector current IC (mA) SJH00008CED −1 000 VCE = −10 V Forward current transfer ratio hFE IC VCE −300 Ta = 75°C 120 25°C 80 −25°C 40 0 −1 −10 −100 −1 000 Collector current IC (mA) 3 UNR212x Series IO VIN 16 12 8 VO = −5 V Ta = 25°C −103 −100 −102 VO = − 0.2 V Ta = 25°C −10 Input voltage VIN (V) 20 VIN IO −104 f = 1 MHz IE = 0 Ta = 25°C Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 24 −1 − 0.1 −10 4 0 − 0.1 −1 −10 −1 − 0.4 −100 Collector-base voltage VCB (V) − 0.6 − 0.8 −1.0 −1.2 −1.4 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR2123 IC VCE VCE(sat) IC Collector current IC (mA) −200 IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA −160 −120 − 0.6 mA − 0.5 mA −80 − 0.4 mA − 0.3 mA −40 − 0.2 mA − 0.1 mA 0 −2 0 −4 −6 −8 −10 −12 IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 −10 −100 −104 0 −1 −1 000 8 −10 −100 −1 000 Collector current IC (mA) VIN IO VO = −5 V Ta = 25°C −103 −100 Input voltage VIN (V) Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 12 −102 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 −10 4 0 − 0.1 −1 −10 −100 Collector-base voltage VCB (V) 4 50 IO VIN 16 −25°C 100 Collector current IC (mA) Cob VCB 20 150 −25°C − 0.01 −1 f = 1 MHz IE = 0 Ta = 25°C Ta = 75°C VCE = −10 V 25°C Collector-emitter voltage VCE (V) 24 hFE IC 200 Forward current transfer ratio hFE Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) −100 −240 −1 − 0.4 − 0.6 − 0.8 −1.0 −1.2 Input voltage VIN (V) SJH00008CED −1.4 − 0.01 − 0.1 −1 −10 Output current IO (mA) −100 UNR212x Series Characteristics charts of UNR2124 VCE(sat) IC Collector current IC (mA) −250 IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA −200 −150 − 0.5 mA − 0.4 mA −100 − 0.3 mA − 0.2 mA −50 − 0.1 mA 0 −2 0 −4 −6 −8 −10 −12 Collector-emitter saturation voltage VCE(sat) (V) Ta = 25°C −100 IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 − 0.01 −1 −10 −100 Ta = 75°C 200 100 0 −1 −1 000 16 12 8 −10 −100 −1 000 Collector current IC (mA) VIN IO VO = −5 V Ta = 25°C −103 −100 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C 25°C −25°C IO VIN −104 Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 300 Collector current IC (mA) Cob VCB 20 VCE = −10 V −25°C Collector-emitter voltage VCE (V) 24 hFE IC 400 Forward current transfer ratio hFE IC VCE −300 −102 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 −10 4 0 − 0.1 −1 −10 −1 − 0.4 −100 Collector-base voltage VCB (V) − 0.6 − 0.8 −1.0 −1.2 −1.4 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR212X VCE(sat) IC Ta = 25°C Collector current IC (mA) −200 IB = −1.6 mA −160 −1.4 mA −1.2 mA −120 −1.0 mA − 0.8 mA −80 − 0.6 mA − 0.4 mA −40 − 0.2 mA 0 0 −2 −4 −6 −8 −10 −12 Collector-emitter voltage VCE (V) Collector-emitter saturation voltage VCE(sat) (V) −100 hFE IC −10 −1 Ta = 75°C 25°C − 0.1 − 0.01 −1 240 IC / IB = 10 Forward current transfer ratio hFE IC VCE −240 −10 – 25°C −100 Collector current IC (mA) SJH00008CED −1 000 VCE = −10 V 200 160 Ta = 75°C 120 25°C 80 −25°C 40 0 −1 −10 −100 −1 000 Collector current IC (mA) 5 UNR212x Series VIN IO −100 f = 1 MHz IE = 0 Ta = 25°C 20 Input voltage VIN (V) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 24 16 12 8 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 4 0 −1 −10 −100 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) Collector-base voltage VCB (V) Characteristics charts of UNR212Y VCE(sat) IC Collector current IC (mA) −200 IB = −1.2 mA −160 −1.0 mA − 0.8 mA −120 − 0.6 mA −80 − 0.4 mA −40 − 0.2 mA 0 0 −2 −4 −6 −8 −10 −12 Collector-emitter saturation voltage VCE(sat) (V) Ta = 25°C −100 −1 Ta = 75°C − 0.1 − 0.01 −1 −100 −1 000 Collector current IC (mA) f = 1 MHz IE = 0 Ta = 25°C −100 Input voltage VIN (V) Collector output capacitance C (pF) (Common base, input open circuited) ob −10 16 12 8 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 4 0 −1 −10 −100 − 0.01 − 0.1 −1 −10 Output current IO (mA) SJH00008CED VCE = −10 V 200 Ta = 75°C 160 25°C 120 −25°C 80 40 0 −1 −10 −100 Collector current IC (mA) VIN IO Collector-base voltage VCB (V) 6 25°C −25°C Cob VCB 20 IC / IB = 10 −10 Collector-emitter voltage VCE (V) 24 hFE IC 240 Forward current transfer ratio hFE IC VCE −240 −100 −1 000 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export 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