PANASONIC UNR9110J

Transistors with built-in Resistor
UNR911xJ Series (UN911xJ Series)
Silicon PNP epitaxial planar type
1.00±0.05
Unit: mm
0.80±0.05
1.60+0.05
–0.03
For digital circuits
0.12+0.03
–0.01
(R2)

10 kΩ
22 kΩ
47 kΩ
47 kΩ



5.1 kΩ
10 kΩ
100 kΩ

47 kΩ
10 kΩ
22 kΩ
10 kΩ
10 kΩ
4.7 kΩ
47 kΩ
47 kΩ
47 kΩ
2.2 kΩ
(0.375)
0.10 max.
5˚
Marking Symbol (R1)
• UNR9110J (UN9110J) 6L
47 kΩ
• UNR9111J (UN9111J) 6A
10 kΩ
• UNR9112J (UN9112J) 6B
22 kΩ
• UNR9113J (UN9113J) 6C
47 kΩ
• UNR9114J (UN9114J) 6D
10 kΩ
• UNR9115J (UN9115J) 6E
10 kΩ
• UNR9116J (UN9116J) 6F
4.7 kΩ
• UNR9117J (UN9117J) 6H
22 kΩ
• UNR9118J (UN9118J) 6I
0.51 kΩ
• UNR9119J (UN9119J) 6K
1 kΩ
• UNR911AJ
6X
100 kΩ
• UNR911BJ
6Y
100 kΩ
• UNR911CJ
6Z

• UNR911DJ (UN911DJ) 6M
47 kΩ
• UNR911EJ (UN911EJ) 6N
47 kΩ
• UNR911FJ (UN911FJ) 6O
4.7 kΩ
• UNR911HJ (UN911HJ) 6P
2.2 kΩ
• UNR911LJ (UN911LJ) 6Q
4.7 kΩ
• UNR911MJ
EI
2.2 kΩ
• UNR911NJ
EW
4.7 kΩ
• UNR911TJ (UN911TJ) EY
22 kΩ
• UNR911VJ
FC
2.2 kΩ
1.60±0.05
0.85+0.05
–0.03
(0.50)(0.50)
(0.80)
2
0 to 0.02
■ Resistance by Part Number
1
0.27±0.02
0.70+0.05
–0.03
• Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
• SS-Mini type package, allowing automatic insertion through tape
packing.
5˚
3
■ Features
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
Internal Connection
R1
B
C
R2
E
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
−50
V
Collector-emitter voltage (Base open)
VCEO
−50
V
Collector current
IC
−100
mA
Total power dissipation
PT
125
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
Note) The part numbers in the parenthesis show conventional part number.
Publication date: January 2004
SJH00038BED
1
UNR911xJ Series
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = −10 µA, IE = 0
Conditions
Min
−50
Typ
Collector-emitter voltage (Base open)
VCEO
IC = −2 mA, IB = 0
−50
Collector-base cutoff current (Emitter open)
ICBO
VCB = −50 V, IE = 0
Collector-base cutoff current (Emitter open)
ICEO
VCE = −50 V, IB = 0
− 0.5
µA
Emitter-base UNR9115J/9116J/9117J/911BJ
IEBO
VEB = −6 V, IC = 0
− 0.01
mA
V
− 0.1
cutoff current UNR9110J/9113J/911AJ
− 0.1
(Collector
open)
UNR9112J/9114J/911DJ/
911EJ/911MJ/911NJ/911TJ
− 0.2
UNR9111J
− 0.5
UNR911FJ/911HJ
−1.0
UNR9119J
−1.5
UNR911VJ
current
UNR9118J/911LJ
20
transfer
UNR9119J/911DJ/911FJ/911HJ
30
ratio
UNR9111J
35
UNR9112J/911EJ
60
UNR9113J/9114J/911AJ/
911CJ/911MJ
80
20
80
400
UNR9110J/9115J/9116J/
9117J/911BJ
160
460
VCE(sat)
IC = −10 mA, IB = − 0.3 mA
− 0.25
VOH
VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ
Output voltage low-level
VOL
VCC = −5 V, VB = −2.5 V, RL = 1 kΩ
UNR9113J/911BJ
VCC = −5 V, VB = −3.5 V, RL = 1 kΩ
UNR911DJ
VCC = −5 V, VB = −10 V, RL = 1 kΩ
UNR911EJ
VCC = −5 V, VB = −6 V, RL = 1 kΩ
V
−4.9
V
− 0.2
V
VCC = −5 V, VB = −5 V, RL = 1 kΩ
UNR911AJ
VCB = −10 V, IE = 1 mA, f = 200 MHz
80
UNR9113J
VCB = −10 V, IE = 1 mA, f = 200 MHz
150
UNR911AJ
VCB = −10 V, IE = 2 mA, f = 200 MHz
80
fT
VCB = −10 V, IE = 2 mA, f = 200 MHz
UNR911CJ
UNR9118J

IC = −10 mA, IB = −1.5 mA
UNR911VJ
Output voltage high-level
Input
6
UNR911NJ/911TJ
Transition frequency
µA
−2.0
hFE
VCE = −10 V, IC = −5 mA
Forward
Collector-emitter saturation voltage
Unit
V
UNR9118J/911CJ/911LJ/911VJ
0.51
1.0
UNR911HJ/911MJ/911VJ
2.2
UNR9116J/911FJ/911LJ/911NJ
4.7
UNR9111J/9114J/9115J
10
UNR9112J/9117J/911TJ
22
UNR9110J/9113J/911DJ/911EJ
47
UNR911AJ/911BJ
100
SJH00038BED
MHz
150
−30%
R1
resistance UNR9119J
2
Max
+30%
kΩ
UNR911xJ Series
■ Electrical Characteristics (continued) Ta = 25°C ± 3°C
Parameter
Emitter-base resistance
Symbol
UNR911CJ
Resistance UNR911MJ
ratio
Conditions
R2
Min
Typ
Max
Unit
−30%
47
+30%
kΩ
R1/R2

0.047
UNR911NJ
0.1
UNR9118J/9119J
0.08
0.10
0.12
UNR9114J
0.17
0.21
0.25
UNR911HJ
0.17
0.22
0.27
UNR911TJ
0.47
UNR911FJ
0.37
UNR911AJ/911VJ
0.47
0.57
1.0
UNR9111J/9112J/9113J/911LJ
0.8
1.0
1.2
UNR911EJ
1.70
2.14
2.60
UNR911DJ
3.7
4.7
5.7
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
PT  Ta
Total power dissipation PT (mW)
150
125
100
75
50
25
0
0
40
80
120
160
Ambient temperature Ta (°C)
Characteristics charts of UNR9110J
VCE(sat)  IC
−60
− 0.2 mA
−40
− 0.1 mA
−20
0
0
−2
−4
−6
−8
−10
−12
Collector-emitter voltage VCE (V)
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC (mA)
Ta = 25°C
IB = −1.0 mA
− 0.9 mA
−100
− 0.8 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
−80
− 0.4 mA
− 0.3 mA
−102
hFE  IC
IC / IB = 10
−10
−1
Ta = 75°C
25°C
−10 −1
−10 −2
−10 −1
400
VCE = –10 V
Forward current transfer ratio hFE
IC  VCE
−120
300
Ta = 75°C
200
25°C
−25°C
100
−25°C
−1
−10
Collector current IC (mA)
SJH00038BED
−102
0
−1
−10
−102
−103
Collector current IC (mA)
3
UNR911xJ Series
IO  VIN
4
3
2
−102
VO = −5 V
Ta = 25°C
−103
Input voltage VIN (V)
5
VIN  IO
−104
f = 1 MHz
IE = 0
Ta = 25°C
Output current IO (µA)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
Cob  VCB
6
−102
VO = − 0.2 V
Ta = 25°C
−10
−1
−10 −1
−10
1
0
−10 −1
−1
−1
−0.4
−102
−10
−0.6
−0.8
−1.0
−1.2
−1.4
−10 −2
−10 −1
−1
−102
−10
Output current IO (mA)
Input voltage VIN (V)
Collecto-base voltage VCB (V)
Characteristics charts of UNR9111J
VCE(sat)  IC
− 0.9 mA
Collector current IC (mA)
−120
− 0.8 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
−80
− 0.4 mA
− 0.3 mA
−40
− 0.2 mA
− 0.1 mA
0
−2
0
−4
−6
−8
−10
−12
−102
IC / IB = 10
−10
−1
−10 −1
−25°C
−10 −2
−10 −1
−1
80
40
4
3
2
−10
−102
−103
Collector current IC (mA)
VIN  IO
−102
VO = −5 V
Ta = 25°C
−103
Input voltage VIN (V)
Output current IO (µA)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
−25°C
IO  VIN
−104
f = 1 MHz
IE = 0
Ta = 25°C
−102
−10
VO = − 0.2 V
Ta = 25°C
−10
−1
−10 −1
1
0
−10 −1
−1
−10
−102
Collector-base voltage VCB (V)
4
25°C
120
0
−1
−102
−10
Ta = 75°C
VCE = −10 V
Collector current IC (mA)
Cob  VCB
5
Ta = 75°C
25°C
Collector-emitter voltage VCE (V)
6
hFE  IC
160
Forward current transfer ratio hFE
Ta = 25°C
IB = −1.0 mA
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
−160
−1
−0.4
−0.6
−0.8
−1.0
−1.2
Input voltage VIN (V)
SJH00038BED
−1.4
−10 −2
−10 −1
−1
−10
Output current IO (mA)
−102
UNR911xJ Series
Characteristics charts of UNR9112J
VCE(sat)  IC
Collector current IC (mA)
−120
− 0.5mA
−80
− 0.4mA
− 0.3mA
− 0.2mA
−40
− 0.1mA
0
−2
0
−4
−6
−8
−10
−102
IC / IB = 10
−10
−1
25°C
−25°C
−10 −2
−10 −1
−12
−1
300
Ta = 75°C
200
25°C
−25°C
100
0
−1
−102
−10
f = 1 MHz
IE = 0
Ta = 25°C
Input voltage VIN (V)
2
−102
VO = −5 V
Ta = 25°C
−102
3
−102
−103
VIN  IO
−103
4
−10
Collector current IC (mA)
IO  VIN
−104
Output current IO (µA)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
VCE = −10 V
Collector current IC (mA)
Cob  VCB
5
Ta = 75°C
−10 −1
Collector-emitter voltage VCE (V)
6
hFE  IC
400
Forward current transfer ratio hFE
Ta = 25°C
IB = −1.0 mA
− 0.9mA
− 0.8mA
− 0.7mA
− 0.6mA
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
−160
VO = − 0.2 V
Ta = 25°C
−10
−1
−10 −1
−10
1
0
−10 −1
−1
−1
−0.4
−102
−10
Collector-base voltage VCB (V)
−0.6
−0.8
−1.0
−1.2
−1.4
−10 −2
−10 −1
−1
−102
−10
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UNR9113J
VCE(sat)  IC
− 0.9 mA
− 0.8 mA
− 0.7 mA
−120
Collector current IC (mA)
Ta = 25°C
− 0.6 mA
− 0.5 mA
− 0.4 mA
−80
− 0.3 mA
− 0.2 mA
−40
− 0.1 mA
0
0
−2
−4
−6
−8
−10
Collector-emitter voltage VCE
−12
(V)
−102
hFE  IC
IC / IB = 10
−10
−1
Ta = 75°C
25°C
−10 −1
−10 −2
−10 −1
400
−25°C
−1
−10
Collector current IC (mA)
SJH00038BED
VCE = −10 V
Forward current transfer ratio hFE
IB = −1.0 mA
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
−160
−102
Ta = 75°C
300
25°C
200
−25°C
100
0
−1
−10
−102
−103
Collector current IC (mA)
5
UNR911xJ Series
IO  VIN
4
3
2
−102
VO = −5 V
Ta = 25°C
−103
Input voltage VIN (V)
f = 1 MHz
IE = 0
Ta = 25°C
5
VIN  IO
−104
Output current IO (µA)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
Cob  VCB
6
−102
VO = − 0.2 V
Ta = 25°C
−10
−1
−10 −1
−10
1
0
−10 −1
−1
−1
−0.4
−102
−10
−0.6
−0.8
−1.0
−1.2
−1.4
−10 −2
−10 −1
−1
−10
−102
Output current IO (mA)
Input voltage VIN (V)
Collector-base voltage VCB (V)
Characteristics charts of UNR9114J
VCE(sat)  IC
IB = −1.0 mA
Collector current IC (mA)
−120
− 0.9 mA
− 0.8 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
−80
− 0.4 mA
− 0.3 mA
− 0.2 mA
−40
− 0.1 mA
0
−2
0
−4
−6
−8
−10
−12
−102
IC / IB = 10
−10
−1
Ta = 75°C
25°C
−10 −1
−1
25°C
−25°C
100
3
2
−102
−103
VIN  IO
−103
VO = −5 V
Ta = 25°C
−103
Input voltage VIN (V)
4
−10
Collector current IC (mA)
IO  VIN
Output current IO (µA)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
Ta = 75°C
200
0
−1
−102
−10
−104
f = 1 MHz
IE = 0
Ta = 25°C
−102
−10
VO = − 0.2 V
Ta = 25°C
−102
−10
−1
1
0
−10 −1
−1
−10
−102
Collector-base voltage VCB (V)
6
300
Collector current IC (mA)
Cob  VCB
5
VCE = −10 V
−25°C
−10 −2
−10 −1
Collector-emitter voltage VCE (V)
6
hFE  IC
400
Forward current transfer ratio hFE
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
−160
−1
−0.4
−0.6
−0.8
−1.0
−1.2
Input voltage VIN (V)
SJH00038BED
−1.4
−10 −1
−10 −1
−1
−10
Output current IO (mA)
−102
UNR911xJ Series
Characteristics charts of UNR9115J
VCE(sat)  IC
− 0.9 mA
− 0.8 mA
− 0.7 mA
Collector current IC (mA)
−120
− 0.6 mA
− 0.5 mA
− 0.4 mA
−80
− 0.3 mA
− 0.2 mA
−40
− 0.1 mA
0
−2
0
−4
−6
−8
−10
−102
IC / IB = 10
−10
−1
Ta = 75°C
25°C
−10 −1
Collector-emitter voltage VCE (V)
−1
200
−25°C
3
2
−10
−102
−103
Collector current IC (mA)
VIN  IO
−102
VO = −5 V
Ta = 25˚C
−103
Input voltage VIN (V)
4
25°C
100
IO  VIN
Output current IO (µA)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
Ta = 75°C
0
−1
−102
−10
−104
f = 1 MHz
IE = 0
Ta = 25°C
5
300
Collector current IC (mA)
Cob  VCB
6
VCE = −10 V
−25°C
−10 −2
−10 −1
−12
hFE  IC
400
Forward current transfer ratio hFE
Ta = 25°C
IB = −1.0 mA
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
−160
−102
VO = − 0.2 V
Ta = 25°C
−10
−1
−10 −1
−10
1
0
−10 −1
−1
−1
−0.4
−102
−10
−0.6
−0.8
−1.0
−1.2
−1.4
−10 −2
−10 −1
−1
−10
−102
Output current IO (mA)
Input voltage VIN (V)
Collector-base voltage VCB (V)
Characteristics charts of UNR9116J
VCE(sat)  IC
− 0.9 mA
− 0.8 mA
−120
Collector current IC (mA)
Ta = 25°C
− 0.7 mA
− 0.6 mA
− 0.5 mA
−80
− 0.4 mA
− 0.3 mA
− 0.2 mA
−40
− 0.1 mA
0
0
−2
−4
−6
−8
−10
Collector-emitter voltage VCE
−12
(V)
−102
hFE  IC
400
IC / IB = 10
−10
−1
Ta = 75°C
25°C
−10 −1
VCE = −10 V
Forward current transfer ratio hFE
IB = −1.0 mA
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
−160
300
Ta = 75°C
200
25°C
−25°C
100
−25°C
−10 −2
−10 −1
−1
−10
Collector current IC (mA)
SJH00038BED
−102
0
−1
−10
−102
−103
Collector current IC (mA)
7
UNR911xJ Series
Cob  VCB
IO  VIN
f = 1 MHz
IE = 0
Ta = 25°C
Output current IO (µA)
5
4
3
2
VIN  IO
−104
−102
VO = −5 V
Ta = 25°C
−103
Input voltage VIN (V)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
6
−102
VO = − 0.2 V
Ta = 25°C
−10
−1
−10 −1
−10
1
0
−10 −1
−1
−1
−0.4
−102
−10
Collector-base voltage VCB (V)
−0.6
−0.8
−1.0
−1.2
−1.4
−10 −2
−10 −1
−1
−10
−102
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UNR9117J
IB = −1.0 mA
− 0.9 mA
− 0.8 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
− 0.4 mA
−80
−60
− 0.3 mA
−40
− 0.2 mA
−20
0
− 0.1 mA
−2
0
−4
−6
−8
−10
−12
−102
IC / IB = 10
−10
Ta = 75°C
−1
25°C
−10 −1
−25°C
−10 −2
−10 −1
Collector-emitter voltage VCE (V)
−1
25°C
100
2
−25°C
−10
−102
−103
Collector current IC (mA)
VIN  IO
−102
VO = −5 V
Ta = 25°C
−103
Input voltage VIN (V)
Output current IO (µA)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
3
Ta = 75°C
200
IO  VIN
4
−102
VO = − 0.2 V
Ta = 25°C
−10
−1
−10 −1
−10
1
0
−10 −1
−1
−10
−102
Collector-base voltage VCB (V)
8
300
0
−1
−102
−10
−104
f = 1 MHz
IE = 0
Ta = 25°C
5
VCE = −10 V
Collector current IC (mA)
Cob  VCB
6
hFE  IC
400
Forward current transfer ratio hFE
Ta = 25°C
−100
Collector current IC (mA)
VCE(sat)  IC
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
−120
−1
−0.4
−0.6
−0.8
−1.0
−1.2
Input voltage VIN (V)
SJH00038BED
−1.4
−10 −2
−10 −1
−1
−10
Output current IO (mA)
−102
UNR911xJ Series
Characteristics charts of UNR9118J
VCE(sat)  IC
Collector current IC (mA)
−200
IB = − 1.0 mA
− 0.9 mA
−160
− 0.8 mA
− 0.7 mA
−120
− 0.6 mA
− 0.5 mA
− 0.4 mA
− 0.3 mA
−80
−40
− 0.2 mA
− 0.1 mA
0
−2
0
−4
−6
−8
−10
−102
IC / IB = 10
−10
−1
Ta = 75°C
25°C
−10 −1
−12
−10 −1
−1
Ta = 75°C
80
40
3
2
−102
−103
VIN  IO
−102
VO = −5 V
Ta = 25°C
−103
Input voltage VIN (V)
f = 1 MHz
IE = 0
Ta = 25°C
−10
Collector current IC (mA)
IO  VIN
4
25°C
−25°C
0
−1
−102
−10
−104
Output current IO (µA)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
120
Collector current IC (mA)
Cob  VCB
5
VCE = −10 V
−25°C
−10 −2
Collector-emitter voltage VCE (V)
6
hFE  IC
160
Forward current transfer ratio hFE
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
−240
−102
VO = − 0.2 V
Ta = 25°C
−10
−1
−10 −1
−10
1
0
−10 −1
−1
−10
−1
−0.4
−102
Collector-base voltage VCB (V)
−0.6
−0.8
−1.0
−1.2
−1.4
−10 −2
−10 −1
−1
−10
−102
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UNR9119J
VCE(sat)  IC
Collector current IC (mA)
−200
IB = −1.0 mA
− 0.9 mA
− 0.8 mA
− 0.7 mA
−160
−120
−80
− 0.6 mA
− 0.5 mA
− 0.4 mA
− 0.3 mA
− 0.2 mA
− 0.1 mA
−40
0
0
−2
−4
−6
−8
−10
−12
Collector-emitter voltage VCE (V)
−102
hFE  IC
IC / IB = 10
−10
−1
Ta = 75°C
25°C
−10 −1
−10 −2
−10 −1
160
VCE = −10 V
Forward current transfer ratio hFE
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
−240
120
Ta = 75°C
80
25°C
−25°C
40
−25°C
−1
−10
Collector current IC (mA)
SJH00038BED
−102
0
−1
−10
−102
−103
Collector current IC (mA)
9
UNR911xJ Series
IO  VIN
4
3
2
−102
VO = −5 V
Ta = 25°C
−103
Input voltage VIN (V)
f = 1 MHz
IE = 0
Ta = 25°C
5
VIN  IO
−104
Output current IO (µA)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
Cob  VCB
6
−102
VO = −0.2 V
Ta = 25°C
−10
−1
−10 −1
−10
1
0
−10 −1
−1
−1
−0.4
−102
−10
Collector-base voltage VCB (V)
−0.6
−0.8
−1.0
−1.2
−1.4
−10 −2
−10 −1
−1
−102
−10
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UNR911AJ
VCE(sat)  IC
− 0.4 mA
−60
− 0.3 mA
−40
− 0.2 mA
−20
− 0.1 mA
0
0
−2
−4
−6
−8
−10
IC / IB = 10
−1
Ta = 75°C
−10 −1
−10 −2
−1
Output current IO (µA)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
f = 1 MHz
Ta = 25°C
0
−10
−20
−30
Collector-base voltage VCB (V)
10
25°C
−40
50
−103
VIN  IO
−10
−1.2
Input voltage VIN (V)
SJH00038BED
−102
−10
−102
VO = −5 V
Ta = 25°C
−0.8
−1
Collector current IC (mA)
−102
−1
−0.4
−25°C
100
IO  VIN
−103
Ta = 75°C
150
0
−10 −1
−102
−10
VCE = −10 V
200
Collector current IC (mA)
Cob  VCB
1
25°C
−25°C
Collector-emitter voltage VCE (V)
10
hFE  IC
250
Forward current transfer ratio hFE
IB = − 0.5 mA
−80
−10
Input voltage VIN (V)
Collector current IC (mA)
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
−100
−1.6
VO = − 0.2 V
Ta = 25°C
−10
−1
−10 −1
−1
−10
Output current IO (mA)
−102
UNR911xJ Series
Characteristics charts of UNR911BJ
Ta = 25°C
IB = − 0.5 mA
−80
− 0.4 mA
−60
− 0.3 mA
−40
− 0.2 mA
−20
0
− 0.1 mA
−2
0
−4
−6
−8
−10
IC / IB = 10
VCE = −10 V
−1
Ta = 75°C
−10 −1
25°C
−25°C
−10 −2
−10 −1
−10
Collector-emitter voltage VCE (V)
−1
0
−10
−20
100
−30
Collector-base voltage VCB (V)
−103
VIN  IO
−1
−0.8
−102
−10
−102
VO = −5 V
Ta = 25°C
−10 −2
−0.4
−40
−1
Collector current IC (mA)
Input voltage VIN (V)
f = 1 MHz
Ta = 25°C
−25°C
200
0
−10 −1
−102
−10 −1
1
25°C
IO  VIN
−10
Output current IO (mA)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
−10
Ta = 75°C
300
Collector current IC (mA)
Cob  VCB
10
hFE  IC
400
Forward current transfer ratio hFE
Collector current IC (mA)
VCE(sat)  IC
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
−100
−1.2
−1.6
VO = − 0.2 V
Ta = 25°C
−10
−1
−10 −1
−10 −1
−1
−10
−102
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UNR911CJ
VCE(sat)  IC
Collector current IC (mA)
− 0.8 mA
− 0.7 mA
− 0.6 mA
−80
− 0.5 mA
− 0.4 mA
− 0.3 mA
−40
− 0.2 mA
− 0.1 mA
0
0
−2
−4
−6
−8
−10
Collector-emitter voltage VCE (V)
−10 −1
−10 −2
−1
hFE  IC
240
−1
VCE = −10 V
IC / IB = 10
Forward current transfer ratio hFE
Ta = 25°C
IB = −1.0 mA
− 0.9 mA
−120
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
Ta = 75°C
25°C
−25°C
−10
Collector current IC (mA)
SJH00038BED
−102
200
Ta = 75°C
25°C
160
−25°C
120
80
40
0
−1
−10
−102
−103
Collector current IC (mA)
11
UNR911xJ Series
IO  VIN
−102
10
1
−10
0
−20
−30
−10
−1
−40
VIN  IO
−10
VO = −5 V
Ta = 25°C
Input voltage VIN (V)
f = 1 MHz
Ta = 25°C
Output current IO (mA)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
Cob  VCB
102
−0.4
0
Collector-base voltage VCB (V)
−1
−10 −1
−10 −1
−0.8
VO = − 0.2 V
Ta = 25°C
−1
−10
−102
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UNR911DJ
Collector current IC (mA)
−50
Ta = 25˚C
−40
− 0.3 mA
−30
− 0.2 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
− 0.4 mA
−20
− 0.1 mA
−10
0
−2
0
−4
−6
−8
−10
−12
−102
IC / IB = 10
−10
−1
Ta = 75°C
25°C
−10 −1
−1
2
−10
−102
−103
Collector current IC (mA)
VIN  IO
−102
VO = −5 V
Ta = 25°C
−103
Input voltage VIN (V)
Output current IO (µA)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
3
−25°C
40
IO  VIN
4
−102
VO = − 0.2 V
Ta = 25°C
−10
−1
−10 −1
−10
1
0
−10 −1
−1
−10
−102
Collector-base voltage VCB (V)
12
25°C
80
0
−1
−102
−10
−104
f = 1 MHz
IE = 0
Ta = 25°C
Ta = 75°C
120
Collector current IC (mA)
Cob  VCB
5
VCE = −10 V
−25°C
−10 −2
−10−1
Collector-emitter voltage VCE (V)
6
hFE  IC
160
Forward current transfer ratio hFE
IB = − 1.0 mA
− 0.9 mA
− 0.8 mA
VCE(sat)  IC
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
−60
−1
−1.5
−2.0
−2.5
−3.0
−3.5
Input voltage VIN (V)
SJH00038BED
−4.0
−10 −2
−10 −1
−1
−10
Output current IO (mA)
−102
UNR911xJ Series
Characteristics charts of UNR911EJ
−40
− 0.3 mA
−30
− 0.6 mA
− 0.5 mA
− 0.4 mA
−20
− 0.2 mA
− 0.1 mA
−102
hFE  IC
IC / IB = 10
−10
−1
Ta = 75°C
25°C
−10 −1
−10
0
−2
0
−4
−6
−8
−10
Collector-emitter voltage VCE
−25°C
−10 −2
−10−1
−12
(V)
−1
200
Ta = 75°C
100
3
2
−10
−102
−103
VIN  IO
VO = −5 V
Ta = 25°C
−103
−102
Input voltage VIN (V)
4
25°C
−25°C
Collector current IC (mA)
IO  VIN
Output current IO (µA)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
300
0
−1
−102
−10
−104
f = 1 MHz
IE = 0
Ta = 25°C
5
VCE = −10 V
Collector current IC (mA)
Cob  VCB
6
400
Forward current transfer ratio hFE
IB = −1.0 mA
Ta = 25°C
− 0.9 mA
− 0.8 mA − 0.7 mA
−50
Collector current IC (mA)
VCE(sat)  IC
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
−60
−102
VO = − 0.2 V
Ta = 25°C
−10
−1
−10 −1
−10
1
0
−10 −1
−1
−1
−1.5
−102
−10
Collector-base voltage VCB (V)
−2.0
−2.5
−3.0
−3.5
−4.0
−10 −2
−10 −1
−1
−10
−102
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UNR911FJ
IB = −1.0 mA
− 0.9 mA
− 0.8 mA
− 0.7 mA
− 0.6 mA
−160
−120
− 0.5 mA
−80
− 0.4 mA
− 0.3 mA
−40
0
− 0.2 mA
0
−2
−4
−6
−8
− 0.1 mA
−10 −12
Collector-emitter voltage VCE (V)
−102
hFE  IC
IC / IB = 10
−10
−1
Ta = 75°C
25°C
−10 −1
−10 −2
−10 −1
160
VCE = −10 V
Forward current transfer ratio hFE
Ta = 25°C
−200
Collector current IC (mA)
VCE(sat)  IC
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
−240
120
Ta = 75°C
25°C
80
−25°C
40
−25°C
−1
−10
Collector current IC (mA)
SJH00038BED
−102
0
−1
−10
−102
−103
Collector current IC (mA)
13
UNR911xJ Series
IO  VIN
4
3
2
−102
VO = −5 V
Ta = 25°C
−103
Input voltage VIN (V)
5
VIN  IO
−104
f = 1 MHz
IE = 0
Ta = 25°C
Output current IO (µA)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
Cob  VCB
6
−102
VO = − 0.2 V
Ta = 25°C
−10
−1
−10 −1
−10
1
0
−10 −1
−1
−1
−0.4
−102
−10
Collector-base voltage VCB (V)
−0.6
−0.8
−1.0
−1.2
−1.4
−10 −2
−10 −1
−1
−102
−10
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UNR911HJ
VCE(sat)  IC
Collector current IC (mA)
−100
−80
IB = − 0.5 mA
− 0.4 mA
−60
− 0.3 mA
−40
− 0.2 mA
−20
− 0.1 mA
0
−2
0
−4
−6
−8
−10
−12
−102
−1
Ta = 75°C
25°C
−10 −1
−25°C
−10 −2
−1
f = 1 MHz
IE = 0
Ta = 25°C
−102
Input voltage VIN (V)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
−102
−103
3
2
VO = − 0.2 V
Ta = 25°C
−10
−1
−10 −1
1
−10
−102
Collector-base voltage VCB (V)
−10 −2
−10 −1
−1
−10
Output current IO (mA)
SJH00038BED
VCE = −10 V
200
160
Ta = 75°C
120
25°C
80
−25°C
40
0
−10 −1
−1
−10
Collector current IC (mA)
VIN  IO
4
0
−1
14
−10
Collector current IC (mA)
Cob  VCB
5
IC / IB = 10
−10
Collector-emitter voltage VCE (V)
6
hFE  IC
240
Forward current transfer ratio hFE
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
−120
−102
−102
UNR911xJ Series
Characteristics charts of UNR911LJ
VCE(sat)  IC
Collector current IC (mA)
−200
−160
IB = −1.0 mA
−120
− 0.8 mA
− 0.6 mA
−80
− 0.4 mA
−40
− 0.2 mA
0
0
–2
–4
–6
–8
–10
−102
−10
−1
−10 −2
−1
Collector-emitter voltage VCE (V)
−102
−10
160
120
80
25°C
−25°C
40
0
−1
−103
Ta = 75°C
−10
−102
−103
Collector current IC (mA)
VIN  IO
Input voltage VIN (V)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
−25°C
−102
f = 1 MHz
IE = 0
Ta = 25°C
5
Ta = 75°C
25°C
VCE = −10 V
200
Collector current IC (mA)
Cob  VCB
6
IC / IB = 10
−10 −1
–12
hFE  IC
240
Forward current transfer ratio hFE
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
−240
4
3
2
VO = − 0.2 V
Ta = 25°C
−10
−1
−10 −1
1
0
−1
−10 −2
−10 −1
−102
−10
−1
−102
−10
Output current IO (mA)
Collecto-base voltage VCB (V)
Characteristics charts of UNR911MJ
IB = −1.0 mA
− 0.9 mA
− 0.8 mA
− 0.7 mA
− 0.6 mA
160
− 0.5 mA
80
− 0.4 mA
− 0.3 mA
40
− 0.2 mA
− 0.1 mA
0
−2
−4
−6
−8
−10
−12
Collector-emitter voltage VCE (V)
hFE  IC
−10
Ta = 75°C
25°C
−25°C
−2
−10 −3
−1
500
IC / IB = 10
−1
−10 −1
120
0
−10
Forward current transfer ratio hFE
Ta = 25°C
200
Collector current IC (mA)
VCE(sat)  IC
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
240
−10
−102
Collector current IC (mA)
SJH00038BED
−103
VCE = −10 V
400
300
Ta = 75°C
200
25°C
−25°C
100
0
−1
−10
−102
−103
Collector current IC (mA)
15
UNR911xJ Series
Cob  VCB
IO  VIN
4
−102
VO = −5 V
Ta = 25°C
−103
Input voltage VIN (V)
8
Output current IO (µA)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
f = 1 MHz
IE = 0
Ta = 25°C
6
VIN  IO
−104
10
−102
−10
VO = − 0.2 V
Ta = 25°C
−10
−1
−10 −1
2
0
−10 −1
−1
−1
−0.4
−102
−10
−0.6
−0.8
−1.0
−1.2
−1.4
−10 −2
−10 −1
Input voltage VIN (V)
Collector-base voltage VCB (V)
−1
−102
−10
Output current IO (mA)
Characteristics charts of UNR911NJ
VCE(sat)  IC
IB = −1.0 mA
Collector current IC (mA)
−150
− 0.9 mA
− 0.8 mA
− 0.7 mA
− 0.6 mA
−100
− 0.5 mA
− 0.4 mA
−50
− 0.3 mA
− 0.2 mA
− 0.1 mA
0
−2
0
−4
−6
−8
−10
−12
−10
IC / IB = 10
−1
Ta = 75°C
−10 −1
25°C
−25°C
−10 −2
−1
Collector-emitter voltage VCE (V)
–104
100
50
3
2
–10
−102
−103
Collector current IC (mA)
VIN  IO
–102
VO = −5 V
Ta = 25°C
–103
Input voltage VIN (V)
Output current IO (µA)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
25°C
−25°C
150
IO  VIN
4
–102
VO = − 0.2 V
Ta = 25°C
−10
−1
–10 −1
–10
1
0
–1
–10
–102
Collector-base voltage VCB (V)
16
Ta = 75°C
200
0
–1
−103
VCE = −10 V
250
Collector current IC (mA)
f = 1 MHz
IE = 0
Ta = 25°C
5
−102
−10
Cob  VCB
6
hFE  IC
300
Forward current transfer ratio hFE
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
−200
–1
−0.4
−0.6
−0.8
−1.0
−1.2
−1.4
Input voltage VIN (V)
SJH00038BED
−1.6
–10 −2
–10 −1
−1
−10
Output current IO (mA)
–102
UNR911xJ Series
Characteristics charts of UNR911TJ
VCE(sat)  IC
Collector current IC (mA)
−150
IB = −1.0 mA
− 0.9 mA
−100
− 0.7 mA
− 0.6 mA
− 0.8 mA
− 0.5 mA
− 0.4 mA
−50
− 0.3 mA
− 0.2 mA
− 0.1 mA
0
−5
0
–102
IC / IB = 10
−10
Ta = 75°C
−1
−25°C
–10 −1
–10 −2
−1
−10
Collector-emitter voltage VCE (V)
25°C
−10
–102
VCE = 10 V
250
Ta = 75°C
200
25°C
150
−25°C
100
50
0
–10 −1
–103
−1
−10
IO  VIN
5
–103
4
3
2
–103
VIN  IO
–102
VO = −5 V
Ta = 25°C
Input voltage VIN (V)
–104
Output current IO (µA)
6
–102
Collector current IC (mA)
Collector current IC (mA)
Cob  VCB
Collector output capacitance
(Common base, input open circuited) Cob (pF)
hFE  IC
300
Forward current transfer ratio hFE
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
–102
−10
−1
VO = 0.2 V
Ta = 25°C
−10
−1
–10 −1
–10 −1
1
0
−1
−10
–10 −2
−0.25
–102
Collector-base voltage VCB (V)
−0.75
–10 −2
–10 −1
−1.25
−1
−10
–102
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UNR911VJ
− 0.9 mA
− 0.8 mA
−8
− 0.7 mA
− 0.6 mA
−6
− 0.5 mA
−4
− 0.4 mA
− 0.3 mA
−2
0
− 0.2 mA
− 0.1 mA
0
−2
−4
−6
−8
−10
−12
Collector-emitter voltage VCE (V)
−10
hFE  IC
IC / IB = 10
−1
Ta = 75°C
25°C
–10 −1
–10 −2
−1
12
Forward current transfer ratio hFE
Ta = 25°C
IB = −1.0 mA
−10
Collector current IC (mA)
VCE(sat)  IC
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
−12
−25°C
−10
–102
Collector current IC (mA)
SJH00038BED
–103
10
VCE = −10 V
Ta = 75°C
25°C
8
6
−25°C
4
2
0
–1
–10
–102
Collector current IC (mA)
17
UNR911xJ Series
IO  VIN
VIN  IO
VO = −5 V
Ta = 25°C
–103
–102
−0.6
−0.8
−1.0
−1.2
Input voltage VIN (V)
18
VO = − 0.2 V
Ta = 25°C
−10
−1
–10 −1
−10
−1
−0.4
–102
Input voltage VIN (V)
Output current IO (µA)
–104
−1.4
–10 −2
–10 −1
−1
−10
Output current IO (mA)
SJH00038BED
–102
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
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(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP