PANASONIC UN9218J

Transistors with built-in Resistor
UNR921xJ Series (UN921xJ Series)
Silicon NPN epitaxial planar type
0.80±0.05
Unit: mm
For digital circuits
1.60+0.05
–0.03
1.00±0.05
■ Features
0.12+0.03
–0.01
5˚
(R2)

10 kΩ
22 kΩ
47 kΩ
47 kΩ



5.1 kΩ
10 kΩ
100 kΩ

47 kΩ
10 kΩ
22 kΩ
10 kΩ
4.7 kΩ
4.7 kΩ
47 kΩ
47 kΩ
47 kΩ
2.2 kΩ
(0.375)
1.60±0.05
5˚
(0.80)
(0.50)(0.50)
0.10 max.
Marking Symbol (R1)
• UNR9210J (UN9210J) 8L
47 kΩ
• UNR9211J (UN9211J) 8A
10 kΩ
• UNR9212J (UN9212J) 8B
22 kΩ
• UNR9213J (UN9213J) 8C
47 kΩ
• UNR9214J (UN9214J) 8D
10 kΩ
• UNR9215J (UN9215J) 8E
10 kΩ
• UNR9216J (UN9216J) 8F
4.7 kΩ
• UNR9217J (UN9217J) 8H
22 kΩ
• UNR9218J (UN9218J) 8I
0.51 kΩ
• UNR9219J (UN9219J) 8K
1 kΩ
• UNR921AJ
8X
100 kΩ
• UNR921BJ
8Y
100 kΩ
• UNR921CJ
8Z

• UNR921DJ (UN921DJ) 8M
47 kΩ
• UNR921EJ (UN921EJ) 8N
47 kΩ
• UNR921FJ (UN921FJ) 8O
4.7 kΩ
• UNR921KJ (UN921KJ) 8P
10 kΩ
• UNR921LJ (UN921LJ) 8Q
4.7 kΩ
• UNR921MJ
EL
2.2 kΩ
• UNR921NJ
EX
4.7 kΩ
• UNR921TJ (UN921TJ) EZ
22 kΩ
• UNR921VJ
FD
2.2 kΩ
2
0 to 0.02
■ Resistance by Part Number
1
0.27±0.02
0.70+0.05
–0.03
• Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
• SS-Mini type package, allowing automatic insertion through tape
packing.
0.85+0.05
–0.03
3
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
Internal Connection
R1
B
C
R2
E
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
50
V
Collector-emitter voltage (Base open)
VCEO
50
V
Collector current
IC
100
mA
Total power dissipation
PT
125
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
Note) The part numbers in the parenthesis show conventional part number.
Publication date: January 2004
SJH00039BED
1
UNR921xJ Series
Transistors with built-in Resistor
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = 10 µA, IE = 0
Conditions
Min
50
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 0
50
Collector-base cut-off current (Emitter open)
ICBO
VCB = 50 V, IE = 0
Typ
Unit
V
V
0.1
µA
Collector-emitter cut-off current (Base open)
ICEO
VCE = 50 V, IB = 0
0.5
µA
Emitterbase
UNR9210J/9215J/
9216J/9217J/921BJ
IEBO
VEB = 6 V, IC = 0
0.01
mA
cut-off
UNR9213J/921AJ
0.1
current
UNR9212J/9214J/921DJ/
(Collector 921EJ/921MJ/921NJ/921TJ
open)
0.2
UNR9211J
0.5
UNR921FJ/921KJ
1.0
UNR9219J
1.5
UNR9218J/921CJ/921LJ/921VJ
2.0
Forward
UNR921VJ
current
UNR9218J/921KJ/921LJ
hFE
VCE = 10 V, IC = 5 mA
6
20
UNR9219J/921DJ/921FJ
30
ratio
UNR9211J
35
UNR9212J/921EJ
60
UNR9213J/9214J/921AJ/
921CJ/921MJ
80
UNR921NJ/921TJ
80
400
UNR9210J/9215J/9216J/
9217J/921BJ
160
460
VCE(sat)
IC = 10 mA, IB = 0.3 mA
Output voltage high-level
VOH
VCC = 5 V, VB = 0.5 V, RL = 1 kΩ
Output voltage low-level
VOL
VCC = 5 V, VB = 2.5 V, RL = 1 kΩ
UNR9213J/921BJ/921KJ
VCC = 5 V, VB = 3.5 V, RL = 1 kΩ
UNR921DJ
VCC = 5 V, VB = 10 V, RL = 1 kΩ
UNR921EJ
VCC = 5 V, VB = 6 V, RL = 1 kΩ
0.25
4.9
V
V
0.2
V
VCC = 5 V, VB = 5 V, RL = 1 kΩ
UNR921AJ
Transition frequency
fT
Input
R1
UNR9218J

20
transfer
Collector-emitter saturation voltage
VCB = 10 V, IE = −2 mA, f = 200 MHz
150
−30%
resistance UNR9219J
2
Max
0.51
1
UNR921MJ/921VJ
2.2
UNR9216J/921FJ/921LJ/921NJ
4.7
UNR9211J/9214J/9215J/921KJ
10
UNR9212J/9217J/921TJ
22
UNR9210J/9213J/921DJ/921EJ
47
UNR921AJ/921BJ
100
SJH00039BED
MHz
+30%
kΩ
Transistors with built-in Resistor
UNR921xJ Series
■ Electrical Characteristics (continued) Ta = 25°C ± 3°C
Parameter
Symbol
Emitter-base resistance UNR921CJ
R2
Rasistance UNR921MJ
ratio
Conditions
Min
Typ
Max
Unit
−30%
47
+30%
kΩ
R1/R2

0.047
UNR921NJ
0.1
UNR9218J/9219J
0.08
0.10
0.12
UNR9214J
0.17
0.21
0.25
UNR921TJ
0.47
UNR921FJ
0.37
0.47
UNR9211J/9212J/9213J/921LJ
0.8
1.0
1.2
UNR921KJ
1.70
2.13
2.60
UNR921EJ
1.70
2.14
2.60
UNR921DJ
3.7
4.7
5.7
UNR921AJ/921VJ
0.57
1.0
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
PT  Ta
Total power dissipation PT (mW)
150
125
100
75
50
25
0
0
40
80
120
160
Ambient temperature Ta (°C)
Characteristics charts of UNR9210J
Ta = 25°C
Collector current IC (mA)
50
40
30
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.1 mA
20
10
0
0
2
4
6
8
10
12
Collector-emitter voltage VCE (V)
102
hFE  IC
400
IC / IB = 10
VCE = 10 V
Forward current transfer ratio hFE
IB = 1.0 mA
0.9 mA
0.8 mA
VCE(sat)  IC
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
60
10
1
Ta = 75°C
25°C
10 −1
300
Ta = 75°C
25°C
200
−25°C
100
−25°C
10 −2
10 −1
0
1
10
Collector current IC (mA)
SJH00039BED
102
1
10
102
103
Collector current IC (mA)
3
UNR921xJ Series
Transistors with built-in Resistor
IO  VIN
4
3
2
102
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
f = 1 MHz
IE = 0
Ta = 25°C
5
VIN  IO
104
Output current IO (µA)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
Cob  VCB
6
102
10
VO = 0.2 V
Ta = 25°C
10
1
10 −1
1
0
10 −1
1
1
0.4
102
10
0.6
0.8
1.0
1.2
10 −2
10 −1
1.4
1
102
10
Output current IO (mA)
Input voltage VIN (V)
Collector-base voltage VCB (V)
Characteristics charts of UNR9211J
VCE(sat)  IC
Collector current IC (mA)
0.7 mA
0.6 mA
0.5 mA
120
0.4 mA
0.3 mA
80
0.2 mA
40
0.1 mA
0
0
2
4
6
8
10
12
102
IC / IB = 10
10
1
25°C
−25˚C
10 −2
10 −1
1
Ta = 75°C
200
25°C
−25°C
100
1
10
3
2
103
VIN  IO
102
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
4
102
Collector current IC (mA)
IO  VIN
Output current IO (µA)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
300
0
102
10
104
f = 1 MHz
IE = 0
Ta = 25°C
102
10
VO = 0.2 V
Ta = 25°C
10
1
10 −1
1
0
10 −1
1
10
Collector-base voltage VCB (V)
4
VCE = 10 V
Collector current IC (mA)
Cob  VCB
5
Ta = 75°C
10 −1
Collector-emitter voltage VCE (V)
6
hFE  IC
400
Forward current transfer ratio hFE
Ta = 25°C
IB = 1.0 mA
0.9 mA
0.8 mA
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
160
102
1
0.4
0.6
0.8
1.0
1.2
Input voltage VIN (V)
SJH00039BED
1.4
10 −2
10 −1
1
10
Output current IO (mA)
102
Transistors with built-in Resistor
UNR921xJ Series
Characteristics charts of UNR9212J
VCE(sat)  IC
IB = 1.0 mA
0.9 mA
0.8 mA
120
0.7 mA
0.6 mA
0.5 mA
0.4 mA
80
0.3 mA
0.2 mA
40
0.1 mA
0
0
2
4
6
8
10
12
102
IC / IB = 10
1
10 −1
−25°C
10 −2
10 −1
1
Ta = 75°C
200
25°C
−25°C
100
0
102
10
300
1
Collector current IC (mA)
4
3
2
102
103
VIN  IO
102
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
f = 1 MHz
IE = 0
Ta = 25°C
10
Collector current IC (mA)
IO  VIN
104
Output current IO (µA)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
Ta = 75°C
25°C
Cob  VCB
5
VCE = 10 V
10
Collector-emitter voltage VCE (V)
6
hFE  IC
400
Forward current transfer ratio hFE
Collector current IC (mA)
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
160
102
10
VO = 0.2 V
Ta = 25°C
10
1
10 −1
1
0
10 −1
1
1
0.4
102
10
Collector-base voltage VCB (V)
0.6
0.8
1.0
1.2
10 −2
10 −1
1.4
1
102
10
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UNR9213J
VCE(sat)  IC
Collector current IC (mA)
0.9 mA
0.8 mA
0.7 mA
0.6 mA
120
0.5 mA
0.4 mA
80
0.3 mA
0.2 mA
40
0.1 mA
0
0
2
4
6
8
10
12
Collector-emitter voltage VCE (V)
102
hFE  IC
IC / IB = 10
10
1
Ta = 75°C
25°C
10 −1
−25°C
10 −2
10 −1
400
1
10
Collector current IC (mA)
SJH00039BED
102
VCE = 10 V
Forward current transfer ratio hFE
Ta = 25°C
IB = 1.0 mA
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
160
Ta = 75°C
300
25°C
−25°C
200
100
0
1
10
102
103
Collector current IC (mA)
5
UNR921xJ Series
Transistors with built-in Resistor
IO  VIN
104
5
4
3
2
VIN  IO
102
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
f = 1 MHz
IE = 0
Ta = 25°C
Output current IO (µA)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
Cob  VCB
6
102
10
VO = 0.2 V
Ta = 25°C
10
1
10 −1
1
0
10 −1
1
1
0.4
102
10
Collector-base voltage VCB (V)
0.6
0.8
1.0
1.2
10 −2
10 −1
1.4
1
102
10
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UNR9214J
IC  VCE
VCE(sat)  IC
Ta = 25°C
Collector current IC (mA)
IB = 1.0 mA
120
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
80
0.3 mA
40
0.2 mA
0.1 mA
0
0
2
4
6
8
10
12
102
IC / IB = 10
1
Ta = 75°C
25°C
10 −2
1
200
25°C
−25°C
100
0
102
10
1
3
2
102
103
VIN  IO
102
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
4
10
Collector current IC (mA)
IO  VIN
104
Output current IO (µA)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
Ta = 75°C
Collector current IC (mA)
f = 1 MHz
IE = 0
Ta = 25°C
102
10
VO = 0.2 V
Ta = 25°C
10
1
10 −1
1
0
10 −1
1
10
Collector-base voltage VCB (V)
6
300
−25°C
10 −1
10 −1
Cob  VCB
5
VCE = 10 V
10
Collector-emitter voltage VCE (V)
6
hFE  IC
400
Forward current transfer ratio hFE
Collector-emitter saturation voltage VCE(sat) (V)
160
102
1
0.4
0.6
0.8
1.0
1.2
Input voltage VIN (V)
SJH00039BED
1.4
10 −2
10 −1
1
10
Output current IO (mA)
102
Transistors with built-in Resistor
UNR921xJ Series
Characteristics charts of UNR9215J
VCE(sat)  IC
Collector current IC (mA)
120
0.7 mA
0.6 mA
0.5 mA
0.4 mA
80
0.3 mA
0.2 mA
40
0.1 mA
0
0
2
4
6
8
10
12
102
IC / IB = 10
1
Ta = 75°C
25°C
10 −1
10
Ta = 75°C
200
25°C
−25°C
100
0
10 −1
1
102
10
1
10
IO  VIN
3
2
102
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
4
103
VIN  IO
104
f = 1 MHz
IE = 0
Ta = 25°C
102
Collector current IC (mA)
Collector current IC (mA)
Output current IO (µA)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
300
−25°C
−2
Cob  VCB
5
VCE = 10 V
10
Collector-emitter voltage VCE (V)
6
hFE  IC
400
Forward current transfer ratio hFE
Ta = 25°C
IB = 1.0 mA
0.9 mA
0.8 mA
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
160
102
10
VO = 0.2 V
Ta = 25°C
10
1
10 −1
1
0
10 −1
1
1
0.4
102
10
Collector-base voltage VCB (V)
0.6
0.8
1.0
1.2
10 −2
10 −1
1.4
Input voltage VIN (V)
1
102
10
Output current IO (mA)
Characteristics charts of UNR9216J
VCE(sat)  IC
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
120
0.4 mA
80
0.3 mA
0.2 mA
40
0.1 mA
0
0
2
4
6
8
10
Collector-emitter voltage VCE
12
(V)
102
hFE  IC
400
IC / IB = 10
10
1
Ta = 75°C
25°C
10 −1
VCE = 10 V
Forward current transfer ratio hFE
Collector current IC (mA)
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
160
Ta = 75°C
300
25°C
−25°C
200
100
−25°C
10 −2
10 −1
0
1
10
Collector current IC (mA)
SJH00039BED
102
1
10
102
103
Collector current IC (mA)
7
UNR921xJ Series
Transistors with built-in Resistor
Cob  VCB
IO  VIN
Output current IO (µA)
5
VIN  IO
104
f = 1 MHz
IE = 0
Ta = 25°C
4
3
2
102
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
6
102
10
VO = 0.2 V
Ta = 25°C
10
1
10 −1
1
0
10 −1
1
1
0.4
102
10
Collector-base voltage VCB (V)
0.6
0.8
1.0
1.2
10 −2
10 −1
1.4
1
102
10
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UNR9217J
80
0.4 mA
0.3 mA
0.2 mA
60
40
20
0.1 mA
0
0
2
4
6
8
10
12
102
IC / IB = 10
1
Ta = 75°C
25°C
10 −1
1
Ta = 75°C
25°C
−25°C
100
0
102
10
1
10
3
2
103
VIN  IO
102
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
4
102
Collector current IC (mA)
IO  VIN
104
Output current IO (µA)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
200
Collector current IC (mA)
f = 1 MHz
IE = 0
Ta = 25°C
102
10
VO = 0.2 V
Ta = 25°C
10
1
10 −1
1
0
10 −1
1
10
Collector-base voltage VCB (V)
8
300
−25°C
10 −2
10 −1
Cob  VCB
5
VCE = 10 V
10
Collector-emitter voltage VCE (V)
6
hFE  IC
400
Forward current transfer ratio hFE
T = 25°C
a
IB =1 .0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
100
Collector current IC (mA)
VCE(sat)  IC
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
120
102
1
0.4
0.6
0.8
1.0
1.2
Input voltage VIN (V)
SJH00039BED
1.4
10 −2
10 − −1
1
10
Output current IO (mA)
102
Transistors with built-in Resistor
UNR921xJ Series
Characteristics charts of UNR9218J
IC  VCE
VCE(sat)  IC
Collector current IC (mA)
200
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
160
120
0.6 mA
0.5 mA
0.4 mA
80
0.3 mA
40
0.2 mA
0
0.1 mA
0
2
4
6
8
10
IC / IB = 10
1
Ta = 75°C
25°C
10 −1
10 −2
10 −1
12
Ta = 75°C
80
25°C
−25°C
40
1
0
102
10
1
IO  VIN
3
2
103
102
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
4
102
VIN  IO
104
f = 1 MHz
IE = 0
Ta = 25°C
10
Collector current IC (mA)
Collector current IC (mA)
Output current IO (µA)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
120
−25°C
Cob  VCB
5
VCE = 10 V
10
Collector-emitter voltage VCE (V)
6
hFE  IC
160
Forward current transfer ratio hFE
Ta = 25°C
102
Collector-emitter saturation voltage VCE(sat) (V)
240
102
10
VO = 0.2 V
Ta = 25°C
10
1
10 −1
1
0
10 −1
1
1
0.4
102
10
Collector-base voltage VCB (V)
0.6
0.8
1.0
1.2
10 −2
10 −1
1.4
1
10
102
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UNR9219J
VCE(sat)  IC
Collector current IC (mA)
200
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
160
120
0.5 mA
0.4 mA
0.3 mA
80
40
0.2 mA
0.1 mA
0
0
2
4
6
8
10
12
Collector-emitter voltage VCE (V)
102
hFE  IC
160
IC / IB = 10
10
1
Ta = 75°C
25°C
10 −1
VCE = 10 V
Forward current transfer ratio hFE
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
240
120
Ta = 75°C
80
25°C
−25°C
40
−25°C
10 −2
10 −1
0
1
10
Collector current IC (mA)
SJH00039BED
102
1
10
102
103
Collector current IC (mA)
9
UNR921xJ Series
Transistors with built-in Resistor
IO  VIN
104
5
4
3
2
VIN  IO
102
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
f = 1 MHz
IE = 0
Ta = 25°C
Output current IO (µA)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
Cob  VCB
6
102
10
VO = 0.2 V
Ta = 25°C
10
1
10 −1
1
0
10 −1
1
1
0.4
102
10
0.6
Collector-base voltage VCB (V)
0.8
1.0
1.2
10 −2
10 −1
1.4
1
102
10
Input voltage VIN (V)
Output current IO (mA)
VCE(sat)  IC
hFE  IC
Characteristics charts of UNR921AJ
Collector current IC (mA)
120
0.4 mA
0.3 mA
80
0.2 mA
40
0.1 mA
0
0
2
4
6
8
10
1
IC / IB = 10
10 −1
−25°C
10 −2
10 −1
20
1
10
102
103
VIN  IO
102
VO = 5 V
Ta = 25°C
Input voltage VIN (V)
Output current IO (mA)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
100
Collector current IC (mA)
1
10 −1
10 −2
10
200
0
10 −1
102
10
25°C
−25°C
IO  VIN
Collector-base voltage VCB (V)
10
1
10
f = 1 MHz
Ta = 25°C
0
Ta = 75°C
300
Collector current IC (mA)
Cob  VCB
1
Ta = 75°C
25°C
Collector-emitter voltage VCE (V)
10
VCE = 10 V
400
Forward current transfer ratio hFE
Ta = 25°C
IB = 0.5 mA
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
VO = 0.2 V
Ta = 25°C
10
1
0
1
2
Input voltage VIN (V)
SJH00039BED
3
1
10
Output current IO (mA)
102
Transistors with built-in Resistor
UNR921xJ Series
Characteristics charts of UNR921BJ
VCE(sat)  IC
Ta = 25°C
IB = 0.5 mA
Collector current IC (mA)
100
0.4 mA
80
0.3 mA
60
0.2 mA
40
0.1 mA
20
0
0
2
4
6
8
10
10
IC / IB = 10
VCE = 10 V
400
1
10 −1
25°C
Ta = 75°C
10 −2
10 −1
1
20
100
1
10
30
Collector-base voltage VCB
VO = 5 V
Ta = 25°C
0.8
103
VIN  IO
102
1
10 −1
0.4
40
(V)
102
Collector current IC (mA)
Input voltage VIN (V)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
200
IO  VIN
Output current IO (mA)
10
−25°C
0
102
10
10
f = 1 MHz
Ta = 25°C
0
25°C
300
Collector current IC (mA)
Cob  VCB
1
Ta = 75°C
−25°C
Collector-emitter voltage VCE (V)
10
hFE  IC
Forward current transfer ratio hFE
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
120
1.2
VO = 0.2 V
Ta = 25°C
10
1
10 −1
10 −1
1.6
1
10
Input voltage VIN (V)
Output current IO (mA)
VCE(sat)  IC
hFE  IC
102
Characteristics charts of UNR921CJ
Ta = 25°C
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
Collector current IC (mA)
120
80
0.3 mA
0.2 mA
40
0.1 mA
0
0
2
4
6
8
10
Collector-emitter voltage VCE (V)
1
IC / IB = 10
VCE = 10 V
Forward current transfer ratio hFE
IB = 1.0 mA
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
Ta = 75°C
10 −1
25°C
−25°C
10 −2
1
300
25°C
200
Collector current IC (mA)
SJH00039BED
102
−25°C
100
0
10
Ta = 75°C
1
10
102
103
Collector current IC (mA)
11
UNR921xJ Series
Transistors with built-in Resistor
IO  VIN
10
1
0
10
20
30
10
1
1
10 −1
10 −1
40
VO = 0.2 V
Ta = 25°C
VO = 5 V
Ta = 25°C
Input voltage VIN (V)
f = 1 MHz
Ta = 25°C
VIN  IO
10
102
Output current IO (mA)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
Cob  VCB
102
0
Collector-base voltage VCB (V)
0.4
1
0.8
102
10
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UNR921DJ
VCE(sat)  IC
20
15
0.2 mA
0.1 mA
10
5
0
0
2
4
6
8
10
12
102
IC / IB = 10
1
80
40
10 −2
10 −1
0
1
102
10
1
2
102
103
VIN  IO
102
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
3
10
Collector current IC (mA)
IO  VIN
Output current IO (µA)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
25°C
−25°C
−25°C
104
4
Ta = 75°C
120
Collector current IC (mA)
f = 1 MHz
IE = 0
Ta = 25°C
102
10
VO = 0.2 V
Ta = 25°C
10
1
10 −1
1
0
10 −1
1
10
Collector-base voltage VCB (V)
12
Ta = 75°C
25°C
10 −1
Cob  VCB
5
VCE = 10 V
10
Collector-emitter voltage VCE (V)
6
hFE  IC
160
Forward current transfer ratio hFE
Collector current IC (mA)
Ta = 25°C
0.9 mA
0.8 mA 0.5 mA
0.4 mA
0.7 mA
25
0.3 mA
0.6 mA
IB = 1.0 mA
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
30
102
1
1.5
2.0
2.5
3.0
3.5
Input voltage VIN (V)
SJH00039BED
4.0
10 −2
10 −1
1
10
Output current IO (mA)
102
Transistors with built-in Resistor
UNR921xJ Series
Characteristics charts of UNR921EJ
VCE(sat)  IC
Collector current IC (mA)
50
40
0.3 mA 0.2 mA
0.4 mA
0.5 mA
0.1 mA
30
20
10
0
0
2
4
6
8
10
Collector-emitter voltage VCE
12
102
IC / IB = 10
1
Ta = 75°C
25°C
10 −1
(V)
25°C
−25°C
80
40
0
1
102
10
1
IO  VIN
2
102
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
3
102
103
VIN  IO
104
4
10
Collector current IC (mA)
Collector current IC (mA)
Output current IO (µA)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
Ta = 75°C
120
−25°C
10 −2
10 −1
f = 1MHz
IE = 0
Ta = 25°C
5
VCE = 10 V
10
Cob  VCB
6
hFE  IC
160
Forward current transfer ratio hFE
IB = 1.0 mA 0.7 mA
Ta = 25°C
0.9 mA
0.6 mA
0.8 mA
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
60
102
10
VO = 0.2 V
Ta = 25°C
10
1
10 −1
1
0
10 −1
1
1
1.5
102
10
Collector-base voltage VCB (V)
2.0
2.5
3.0
3.5
10 −2
10 −1
4.0
1
102
10
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UNR921FJ
VCE(sat)  IC
Collector current IC (mA)
200
0.9 mA
0.8 mA
0.7 mA
0.6 mA
160
120
IB = 1.0 mA
0.5 mA
80
0.4 mA
0.3 mA
40
0.2 mA
0.1 mA
0
0
2
4
6
8
10
12
Collector-emitter voltage VCE (V)
102
hFE  IC
160
IC / IB = 10
10
Ta = 75°C
1
VCE = 10 V
Forward current transfer ratio hFE
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
240
25°C
10 −1
120
Ta = 75°C
80
25°C
−25°C
40
−25°C
10 −2
10 −1
0
1
10
Collector current IC (mA)
SJH00039BED
102
1
10
102
103
Collector current IC (mA)
13
UNR921xJ Series
Transistors with built-in Resistor
IO  VIN
104
5
4
3
2
VIN  IO
102
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
f = 1 MHz
IE = 0
Ta = 25°C
Output current IO (µA)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
Cob  VCB
6
102
10
VO = 0.2 V
Ta = 25°C
10
1
10 −1
1
0
10 −1
1
1
0.4
102
10
Collector-base voltage VCB (V)
0.6
0.8
1.0
1.2
1.4
10 −2
10 −1
Input voltage VIN (V)
1
102
10
Output current IO (mA)
Characteristics charts of UNR921KJ
VCE(sat)  IC
Collector current IC (mA)
200
160
IB = 1.2 mA
1.0 mA
120
0.8 mA
80
0.6 mA
0.4 mA
40
0.2 mA
0
0
2
4
6
8
10
12
102
1
10 −1
10 −2
1
103
3
2
VO = 0.2 V
Ta = 25°C
10
1
10 −1
1
1
10
Collector-base voltage VCB (V)
102
10 −2
10 −1
160
Ta = 75°C
120
25°C
80
1
10
Output current IO (mA)
SJH00039BED
−25°C
40
1
10
102
Collector current IC (mA)
VIN  IO
102
Input voltage VIN (V)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
102
VCE = 10 V
200
0
10
Collector current IC (mA)
f = 1 MHz
IE = 0
Ta = 25°C
4
0
14
25°C
Ta = 75°C
−25°C
Cob  VCB
5
IC / IB = 10
10
Collector-emitter voltage VCE (V)
6
hFE  IC
240
Forward current transfer ratio hFE
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
240
102
103
Transistors with built-in Resistor
UNR921xJ Series
Characteristics charts of UNR921LJ
VCE(sat)  IC
Collector current IC (mA)
200
160
IB = 1.0 mA
0.8 mA
120
0.6 mA
80
0.4 mA
40
0.2 mA
0
0
2
4
6
8
10
10
1
Ta = 75°C
25°C
10 −1
−25°C
10 −2
12
1
102
200
25°C
120
−25°C
80
40
0
103
Ta = 75°C
160
1
10
102
103
Collector current IC (mA)
VIN  IO
102
f = 1 MHz
IE = 0
Ta = 25°C
Input voltage VIN (V)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
10
VCE = 10 V
Collector current IC (mA)
Cob  VCB
5
240
IC / IB = 10
Collector-emitter voltage VCE (V)
6
hFE  IC
102
Forward current transfer ratio hFE
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
240
4
3
2
VO = 0.2 V
Ta = 25°C
10
1
10 −1
1
0
1
10 −2
10 −1
102
10
Collector-base voltage VCB (V)
1
102
10
Output current IO (mA)
Characteristics charts of UNR921MJ
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
Collector current IC (mA)
160
0.5 mA
0.4 mA
0.3 mA
120
80
0.2 mA
40
0.1 mA
0
2
4
6
8
10
Collector-emitter voltage VCE
12
(V)
10
hFE  IC
IC / IB = 10
1
Ta = 75°C
25°C
10 −1
−25˚C
10 −2
10 −3
500
Forward current transfer ratio hFE
Ta = 25°C
200
0
VCE(sat)  IC
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
240
1
10
102
Collector current IC (mA)
SJH00039BED
103
VCE = 10 V
400
300
Ta = 75°C
25°C
200
−25°C
100
0
1
10
102
103
Collector current IC (mA)
15
UNR921xJ Series
Transistors with built-in Resistor
IO  VIN
104
VIN  IO
102
VO = 5 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
VO = 0.2 V
Ta = 25°C
4
3
2
103
10
Input voltage VIN (V)
Output current IO (µA)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
Cob  VCB
5
102
10
1
10 −1
1
0
10 −1
1
10 −2
10 −1
1
102
10
0.4
0.6
0.8
1.0
1.2
1.4
Input voltage VIN (V)
Collector-base voltage VCB (V)
1
102
10
Output current IO (mA)
Characteristics charts of UNR921NJ
VCE(sat)  IC
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
120
80
0.3 mA
0.2 mA
40
0.1 mA
0
0
2
4
6
8
10
12
10
IC / IB = 10
1
Ta = 75°C
10 −1
25°C
10 −2
1
Ta = 75°C
320
25°C
240
−25°C
160
80
0
103
1
10
2
103
VIN  IO
102
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
3
102
Collector current IC (mA)
IO  VIN
104
Output current IO (µA)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
400
Collector current IC (mA)
f = 1 MHz
IE = 0
Ta = 25°C
4
102
10
VO = 0.2 V
Ta = 25°C
10
1
10 −1
1
0
1
10
Collector-base voltage VCB (V)
16
102
10
Cob  VCB
5
VCE = 10 V
−25°C
Collector-emitter voltage VCE (V)
6
hFE  IC
480
Forward current transfer ratio hFE
Collector current IC (mA)
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
160
102
1
0.4
0.6
0.8
1.0
1.2
Input voltage VIN (V)
SJH00039BED
1.4
10 −2
10 −1
1
10
Output current IO (mA)
102
Transistors with built-in Resistor
UNR921xJ Series
Characteristics charts of UNR921TJ
VCE(sat)  IC
80
0.3 mA
0.2 mA
40
0.1 mA
0
0
2
4
6
8
10
IC / IB = 10
Ta = 75°C
102
25°C
10
1
−25°C
Ta = 75°C
300
25°C
200
−25°C
100
0
10 −1
102
10
VCE = 10 V
Collector current IC (mA)
Collector-emitter voltage VCE (V)
Cob  VCB
1
102
102
10
Collector current IC (mA)
IO  VIN
4
VIN  IO
102
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
10
3
Output current IO (mA)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
hFE  IC
400
Forward current transfer ratio hFE
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
120
103
2
1
Input voltage VIN (V)
Collector current IC (mA)
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (mV)
IC  VCE
160
1
10 −1
10
1
10 −2
0
1
10 −3
0.25
102
10
Collector-base voltage VCB (V)
0.75
10 −1
10 −3
1.25
10 −2
10 −1
1
10
102
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UNR921VJ
VCE(sat)  IC
IB = 1.0 mA
120
0.9 mA
0.8 mA
0.7 mA
80
0.6 mA
0.5 mA
40
0.4 mA
0
0.3 mA
0.2 mA
0
2
4
6
8
10
12
Collector-emitter voltage VCE (V)
10
hFE  IC
IC / IB = 10
1
10 −1
Ta = 75°C
25°C
−25°C
10 −2
1
240
Forward current transfer ratio hFE
Collector current IC (mA)
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
160
200
160
Ta = 75°C
120
25°C
80
102
Collector current IC (mA)
SJH00039BED
103
−25°C
40
0
10
VCE = 10 V
1
10
102
103
Collector current IC (mA)
17
UNR921xJ Series
Transistors with built-in Resistor
IO  VIN
4
3
2
103
102
10
10
1
10 −1
1
0
1
10
Collector-base voltage VCB (V)
18
VO = 0.2 V
Ta = 25°C
VO = 5 V
Ta = 25°C
Input voltage VIN (V)
5
VIN  IO
102
104
f = 1 MHz
IE = 0
Ta = 25°C
Output current IO (µA)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
Cob  VCB
6
102
1
0.4
0.6
0.8
1.0
1.2
Input voltage VIN (V)
SJH00039BED
1.4
10 −2
10 −1
1
10
Output current IO (mA)
102
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP