AON6518 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application VDS 30V 85A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 1.75mΩ RDS(ON) (at VGS=4.5V) < 2.7mΩ 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Orderable Part Number Package Type Form Minimum Order Quantity AON6518 DFN 5x6 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy VDS Spike L=0.05mH C 10µs TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: October 2013 IAS 65 A EAS 106 mJ VSPIKE 36 V 56 Steady-State Steady-State W 22 6.2 RθJA RθJC W 4 TJ, TSTG Symbol t ≤ 10s A 38 PDSM Junction and Storage Temperature Range A 48 PD TA=25°C V 230 IDSM TA=70°C ±20 66 IDM TA=25°C Units V 85 ID TC=100°C C Maximum 30 -55 to 150 Typ 15 40 1.8 www.aosmd.com °C Max 20 50 2.2 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA gFS Forward Transconductance VDS=5V, ID=20A 1.4 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current TJ=125°C VGS=4.5V, ID=20A Crss Reverse Transfer Capacitance Rg Gate resistance µA ±100 nA 1.8 2.2 V 1.45 1.75 2.1 2.55 2.15 2.7 0.68 VGS=0V, VDS=15V, f=1MHz mΩ mΩ 80 DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance V 5 VGS=10V, ID=20A Static Drain-Source On-Resistance Units 1 TJ=55°C RDS(ON) Max 30 VDS=30V, VGS=0V IDSS Coss Typ S 1 V 68 A 3700 pF 1530 pF 225 pF 0.8 1.2 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 53 75 nC Qg(4.5V) Total Gate Charge 26 38 nC Qgs Gate Source Charge Qgd f=1MHz VGS=10V, VDS=15V, ID=20A 0.4 9.6 nC Gate Drain Charge 8.2 nC tD(on) Turn-On DelayTime 10.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs Body Diode Reverse Recovery Time VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 6 ns 34 ns 7.5 ns 22 ns nC 63.5 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: October 2013 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 80 4.5V VDS=5V 3.5V 60 60 3V ID(A) ID (A) 10V 40 125°C 40 20 20 25°C VGS=2.5V 0 0 0 1 2 3 4 1 5 2 4 4 5 Normalized On-Resistance 1.6 3 RDS(ON) (mΩ Ω) 3 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) VGS=4.5V 2 1 VGS=10V VGS=10V ID=20A 1.4 1.2 VGS=4.5V ID=20A 1 0.8 0 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 5 1.0E+02 ID=20A 1.0E+01 4 3 IS (A) RDS(ON) (mΩ Ω) 1.0E+00 125°C 125°C 1.0E-01 1.0E-02 2 25°C 1.0E-03 25°C 1 1.0E-04 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: October 2013 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 4500 VDS=15V ID=20A 3500 Capacitance (pF) VGS (Volts) Ciss 4000 8 6 4 3000 2500 Coss 2000 1500 1000 2 500 0 Crss 0 0 10 20 30 40 50 60 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 500 1000.0 10µs RDS(ON) limited 10.0 DC 1.0 400 100µs 1ms 10ms TJ(Max)=150°C TC=25°C 0.1 TJ(Max)=150°C TC=25°C 10µs Power (W) 100.0 ID (Amps) 10 300 200 100 0 0.0 0.01 0.1 1 10 VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=2.2°C/W 1 0.1 PD Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: October 2013 www.aosmd.com Page 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 100 80 Current rating ID(A) Power Dissipation (W) 60 40 20 0 60 40 20 0 0 25 50 75 100 125 150 0 25 TCASE (° °C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 TCASE (° °C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 Zθ JA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 PD Single Pulse Ton T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: October 2013 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev.1.0: October 2013 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6