Variable Capacitance Diodes MA2J372 Silicon epitaxial planar type Unit : mm INDICATES CATHODE 1 2 0.4 ± 0.15 + 0.1 • Large capacitance ratio • Small series resistance rD • S-mini type package, allowing downsizing of equipment and automatic insertion through the taping package (Flat type) 0.45 − 0.05 ■ Features 0.4 ± 0.15 1.7 ± 0.1 2.5 ± 0.2 Symbol Rating Unit Reverse voltage (DC) VR 32 V Peak reverse voltage* VRM 34 V Forward current (DC) IF 20 mA Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.9 ± 0.1 + 0.1 0.16 − 0.06 ■ Absolute Maximum Ratings Ta = 25°C Parameter 1.25 ± 0.1 For UHF and VHF electronic tuners 1 : Anode 2 : Cathode S-Mini Type Package (Flat 2-pin) Marking Symbol: 6N Note) * : RL = 2.2 kΩ ■ Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Diode capacitance Capacitance ratio Symbol IR Conditions Min VR = 30 V Typ Max Unit 10 nA CD(2V) VR = 2 V, f = 1 MHz 14.220 15.473 pF CD(25V) VR = 25 V, f = 1 MHz 2.132 2.321 pF CD(10V) VR = 10 V, f = 1 MHz 5.307 6.128 pF CD(17V) VR = 17 V, f = 1 MHz 2.909 3.411 pF CD(2V)/CD(25V) 6.22 CD(10V)/CD(17V) 1.70 Diode capacitance deviation ∆C CD(2V)(10V)(17V)(25V) Series resistance* rD CD = 9 pF, f = 470 MHz 1.96 2 % 0.45 Ω Note) 1．Rated input/output frequency: 470 MHz 2．* : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 1 MA2J372 Variable Capacitance Diodes CD VR f = 1 MHz Ta = 25°C Forward current IF (mA) Diode capacitance CD (pF) 50 30 20 10 5 3 100 Reverse current IR (nA) 100 1.02 80 Ta = 60°C − 40°C 25°C 60 40 0 0 4 8 12 16 20 24 28 32 36 40 Reverse voltage VR (V) IR T a 10 1 0.1 0.01 0 20 40 60 80 100 120 140 160 180 200 Ambient temperature Ta (°C) 2 1.03 VR = 2 V 10 V 1.01 17 V 25 V 1.00 0.99 20 2 1 CD Ta IF V F 120 CD(Ta) CD(Ta = 25°C) 100 0.98 0 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V) 1.2 0.97 0 20 40 60 80 Ambient temperature Ta (°C) 100