PIN Diodes MA3X555 Silicon epitaxial planar type Rating Unit Reverse voltage (DC) VR 40 V Peak reverse voltage VRM 45 V Forward current (DC) IF 100 mA Power dissipation PD 150 mW Operating ambient temperature Topr −25 to +85 °C Storage temperature Tstg −55 to +150 °C 1.45 + 0.1 3 0.4 − 0.05 0.95 1 + 0.1 0.16 − 0.06 0.8 0.1 to 0.3 0.4 ± 0.2 0 to 0.1 Symbol 0.65 ± 0.15 0.95 + 0.2 2.9 − 0.05 1.1 − 0.1 ■ Absolute Maximum Ratings Ta = 25°C 1.5 + 0.25 − 0.05 2 + 0.2 • Small diode capacitance CD • Large variable range of forward dynamic resistance rf • Mini type package, allowing downsizing of equipment and automatic insertion through the taping package and magazine package 1.9 ± 0.2 0.65 ± 0.15 ■ Features Parameter Unit : mm + 0.2 2.8 − 0.3 For UHF and SHF bands AGC 1 : Cathode 1 2 : Anode 2 3 : Cathode 2 Anode 1 Mini Type Package (3-pin) Marking Symbol: M2H Internal Connection 1 3 2 ■ Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Symbol Conditions Min Typ Max Unit 100 nA IR VR = 40 V Forward voltage (DC) VF IF = 100 mA 1.05 1.2 V Diode capacitance CD VR = 15 V, f = 1 MHz 0.3 0.5 pF rf1 IF = 10 µA, f = 100 MHz rf2 IF = 10 mA, f = 100 MHz Forward dynamic resistance* 1 2 6 kΩ 10 Ω Note) 1．Rated input/output frequency: 100 MHz 2．* : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 1 MA3X555 PIN Diodes IF V F 1 000 CD VR 2 Ta = 25°C IR Ta 100 f = 1 MHz Ta = 25°C VR = 40 V 10 1 Reverse current IR (nA) Diode capacitance CD (pF) Forward current IF (mA) 1 100 0.5 0.3 0.2 0.1 10 1 0.1 0.05 0.03 0.1 0.02 0 0.4 0.8 1.2 1.6 2.0 rf I F Forward dynamic resistance rf (Ω) f = 100 MHz Ta = 25°C 1k 100 10 1 0.01 0.1 1 Forward current IF (mA) 2 4 8 12 16 20 24 28 32 36 40 Reverse voltage VR (V) Forward voltage VF (V) 10 k 0 10 0.01 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C)