Advanced Power Electronics Corp. APE8937-HF-3 Ultra-Low On-Resistance 4A Load Switch Features Description Integrated 4A Single Channel Load Switch The APE8937-HF-3 is a small single load switch with Input Voltage Range: 0.8V to 5.5V ultra-low RON of 22mΩ and controlled turn-on, using Ultra-low On-Resistance an N-channel MOSFET that can operate over an input RON=22mΩ at Vin=5V (VBIAS=5V) voltag ge range of 0.8V 0 to 5.5V and supportt maximum RON=22mΩ at Vin=1.8V (VBIAS=5V) contin nuous curren nt up to 4A. Low Threshhold Control Input The switch is controlled by an on/off input (EN), which Adjustable Rise Time e is capable of interfacing directly with low-voltage Integrated Quick Output Discharge contro ol signals. ESD Level: 2kV for HBM, 1kV for CDM Additional feature es include a 300Ω on-chip load RoHS-Compliant, halogen-free resistor for output quick discharge when the switch is turned d off. In orde er to avoid inrush curren nt, the rise Applications Telecom Systems time is adjustable using an external ceramic capacitor Industrial Systems on the e CT pin. Set-Top Boxes The APE8937-HF-3 is available in an ultra-small, Consumer Electronics space-saving 2mmx2mm 8-pin DFN package with Handheld Products a thermal pad. Ordering Information Pin Configuration Top View DFN2x2-8L APE8937GN2-HF-3TR VIN N 1 VIN N 2 Package Type GN2 : DFN2x2-8L Exposed Pad EN E 3 V BIA AS 4 Typical Application Circuit GND 8 VOUT 7 VOUT 6 CT 5 GND +5V or +3.3V V VBIAS VIN VIN CIN 1uF COUT 0.1uF APE8937 7 EN CT GND ©2014 Advanced Power Electronics Corp. USA www.a-powerusa.com VOUT VOUT CT 20131015V1.0-3 1/14 Advanced Power Electronics Corp. Absolute Maximum Ratings (Note 1) APE8937-HF-3 at TA= 25°C VIN -0.3V V to 6V VOUT VIN+ +0.3V EN, CT -0.3V V to 6V VBIAS -0.3+6V IMAX 4A Storage Temperature Range R (TST) -65 to t +150°C Junction Te emperature (TJ) 150°C Lead Temperature (Soldering, 10 sec.) 260°C Thermal Re esistance from Junction to Ambient, Rth(ja) DFN-8L (2mmX2mm) 100°C/W Thermal Re esistance from Junction to Case (thermal pad), Rth(jc) DFN-8L (2mmX2mm) 20°C/W Electrostatic Discharge (ESD) HBM (MIL-STD 883G Method 3015.7) 2kV CDM (JESD22-C101-C) 1kV Recommended Operating Conditions VIN 0.8V to 5.5V VBIAS 2.5V to 5.5V (VBIAS > VIN) VOUT VIN1 CIN >0.1uF Junction Temperature (TJ) 125°C Operating Temperature Range -40°C to +85°C Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Conditions are conditions under which the device functions but the specifications might not be guaranteed. For guaranteed specifications and test conditions see the Electrical Specifications. Note2: The maximum power dissipation is a function of the maximum junction temperature, TJmax , total thermal resistance, Rth(ja) and ambient temperature TA . The maximum allowable power dissipation at any ambient temperature is (Tjmax -TA ) / Rth(ja). Note3: Low duty pulse techniques are used during test to maintain a junction temperature as close to ambient as possible. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. ©2014 Advanced Power Electronics Corp. USA www.a-powerusa.com 2/14 Advanced Power Electronics Corp. APE8937-HF-3 Electrical Specifications (VIN=0.8V to 5.5V, VBIAS=5V, CIN=1uF, COUT=0.1uF, TA=25°C, unless otherwise specified) RAMETER PAR Quiescent Current C Shutdown Current C M SYM TEST CON NDITION TYP MAX M UNIT VBIAS=VIN=VEN=5V, IOUUT=0A 50 75 uA VBIAS=VIN=VEN=2.5V, IOUT=0A 30 50 uA 1 uA IBIASS ISD VEN=GND D VBIAS=VIN=VEN=5V, ON Resistance(Note2) IOUT=200m mA RONN EN Input Le eakage Curre ent TA=25°C -40~85°C 22 (N NOTE1) 23 -40~85°C(NNOTE1) 300 VEN=5V or o GND VENH on mΩ 27 34 ROPD VBIAS=5V, VEN=0V ION 26 33 VBIAS=VIN=VEN=2.5V, TA=25°C IOUT=200m mA Output Pull Down Resisstance N MIN mΩ 350 Ω 1 uA 1.2 V EN Thresho old VENL off 0.5 V Note1: Guaranteed by design, not production tested Note2: Makke sure VBIAS≧VIN for optimum RON pe erformance. ©2014 Advanced Power Electronics Corp. USA www.a-powerusa.com 3/14 Advanced Power Electronics Corp. APE8937-HF-3 Pin Descriptions PIN No. PIN SYMBOL PIN DESC CRIPTION 1, 2 V VIN I Input power supply; bypa ass this inputt with a ceram mic capacito or to ground. 3 E EN E Enable contrrol input, actiive high. Do not leave flo oating. 4 VB BIAS 5 G GND 6 C CT 7, 8 VO OUT S Switch outpu ut G GND T to ground Tie d to alleviate e thermal stre ess. Exposed d pad B Bias voltage. G Ground. A capacitor to t ground sett the rise time of VOUT. Block Diagram VBIAS VIN Osscillator Charrge Pump VOUT Control Logiic Output Discharge GND EN CT T ©2014 Advanced Power Electronics Corp. USA www.a-powerusa.com 4/14 Advanced Power Electronics Corp. APE8937-HF-3 Timing Specifications VBIAS VBIAS VIN VIN VOUTT VOUT CIN 1uF COUUT 0.1uF AP PE8937 VEN EN RL CT GND CT Fig g.1 Test Cirrcuit VEN tON tOFF 90% 90% 5 50% 50% 1% VOUT tD-ON 10% 10 0% tR tF Fig.2 ON/OFF Wa aveforms PAR RAMETER Turn-on Tim me Turn-off Tim me VOUT Rise Time VOUT Fall Time T VOUT Turn--on Delay Tim me ©2014 Advanced Power Electronics Corp. USA www.a-powerusa.com SYM M tON tOFFF tR tF tD-ONN TEST CON NDITION N MIN TYP MAX M UNIT VBIAS=VENN=5V, VIN=5V 1480 us CT=1nF, RL=10Ω VIN=0.8V 520 us VBIAS=VENN=5V, VIN=5V 1 us CT=1nF, RL=10Ω VIN=0.8V 1 us VBIAS=VENN=5V, VIN=5V 1910 us CT=1nF, RL=10Ω VIN=0.8V 290 us VBIAS=VENN=5V, VIN=5V 1.9 us CT=1nF, RL=10Ω VIN=0.8V 1.6 us VBIAS=VENN=5V, VIN=5V 310 us CT=1nF, RL=10Ω VIN=0.8V 270 us 5/14 Advanced Power Electronics Corp. APE8937-HF-3 Typical Performance Characteristics Condition: VBIAS=5V, VENN=3.3V, CT= =1nF, CIN=1µF, COUT=0.1µ µF, Io=4A, ch1:EN, ch2:V VOUT, ch4:IIN Fig.3 3 Start-up Waveform, W V VIN=0.8V S Wave eform, VIN=1 1.05V Fig.4 Start-up Fig.5 5 Start-up Waveform, W V VIN=1.8V Fig.6 Start-up S Wavveform, VIN= =2.5V Fig.7 7 Start-up Waveform, W V VIN=3.3V Fig.8 Start-up S Wavveform, VIN= =5.0V ©2014 Advanced Power Electronics Corp. USA www.a-powerusa.com 6/14 Advanced Power Electronics Corp. Typical Performance Characteristics APE8937-HF-3 (continued) Condition: VBIAS=VEN=3.3V, CT=1nF F, CIN=1µF, COUT=0.1µF, Io=4A, ch1:E EN, ch2:VOUTT, ch4:IIN Fig.9 9 Start-up Waveform, W V VIN=0.8V Fig.10 Start-up S Wavveform, VIN= =1.05V Fig.1 11 Start-up Waveform, VIN=1.8V V Fig.12 Start-up Wavveform, VIN= =2.5V Fig.1 13 Start-up Waveform, VIN=3.3V V =5.0V Fig.14 Start-up Wavveform, VIN= ©2014 Advanced Power Electronics Corp. USA www.a-powerusa.com 7/14 Advanced Power Electronics Corp. Typical Performance Characteristics APE8937-HF-3 (continued) Condition: VBIAS=VEN=5V V, CT=1nF, CIN=1µF, COUUT=0.1µF, RL L=10Ω, ch1:E EN, ch2:VOUTT Fig.15 Turn-on Re esponse Time, VIN=0.8V V Fig.16 Turrn-on Respo onse Time, VIN=1.8V esponse Time, VIN=3.3V V Fig.17 Turn-on Re Fig.18 Tu urn-on Respo onse Time, VIN=5V V esponse Time, VIN=0.8V V Fig.19 Turn-off Re Fig.20 Turrn-off Respo onse Time, VIN=1.8V ©2014 Advanced Power Electronics Corp. USA www.a-powerusa.com 8/14 Advanced Power Electronics Corp. Typical Performance Characteristics APE8937-HF-3 (continued) Condition: VBIAS=VEN=5V V, CT=1nF, CIN=1µF, COUUT=0.1µF, RL L=10Ω, ch1:E EN, ch2:VOUTT Fig.21 Turn-off Re esponse Time, VIN=3.3V V Fig.22 Tu urn-off Respo onse Time, VIN=5V V Fig.23 Turn-on Delay Time, VIN=0.8V Fig.24 Turn-on T Dela ay Time, VIN=1.8V Fig.25 Turn-on Delay Time, VIN=3.3V Fig.26 Turn-on Delay Time, VIN N=5V ©2014 Advanced Power Electronics Corp. USA www.a-powerusa.com 9/14 Advanced Power Electronics Corp. APE8937-HF-3 Typical Performance Characteristics 2.0 CT=1nF, Cin=1uF, Cout=0.1uF F, RL=10Ω 1600 1.8 1400 1.6 Turn off Time (us) Turn-off Turn-on Time (us) 1800 (continued) 1200 1000 800 600 CT=1n nF, Cin=1uF, Co out=0.1uF, RL=10Ω 1.4 1.2 1.0 0.8 0.6 400 0.4 VBIAS=5V 200 VBIAS=5V 0.2 VBIAS=3.3V 0 VBIA AS=3.3V 0.0 0.8 8 1.4 2.0 2.6 3.2 VIN (V) 3 3.8 4.4 5.0 0.8 4 1.4 Fig.27 tON vs. VIN 10 C CT=1nF, Cin=1u uF, Cout=0.1uF, RL=10Ω 2000 9 1750 8 1500 1250 1000 750 500 4.4 5.0 CT=1nF, Cin=1uF, Co out=0.1uF, RL=1 10Ω 7 6 5 4 3 VBIAS=5V 1 VBIAS=3.3V 0 VBIA AS=3.3V 0 0.8 8 1.4 2.0 2.6 3.2 VIN (V) 3 3.8 4.4 5.0 0.8 Fig.29 tR vs. VIN 2.0 1.4 2.6 3.2 VIN (V) 3.8 4.4 5.0 Fig.30 tF vs. VIN 22.0 CT=1nF, Cin=1uF, Cout=0.1uF F, RL=10Ω 380 21.9 360 21.8 340 21.7 320 21.6 RON (mΩ) VOUT Turn-on Delay Time (us) 3.8 2 VBIAS=5V 250 400 2.6 3.2 VIIN (V) Fig.28 tOFFF vs. VIN VOUT Fall Time (us) VOUT Rise Time (us) 2250 2.0 300 280 21.5 21.4 21.3 260 21.2 240 VBIAS=5V 220 VBIAS=3.3V VBIAS=5V 21.1 VBIA AS=3.3V 21.0 200 8 0.8 1.4 2.0 2.6 3.2 VIN (V) 3 3.8 N Fig.31 tD-ON vs. VIN ©2014 Advanced Power Electronics Corp. USA www.a-powerusa.com 4.4 5.0 0.8 1 1.4 2 2.6 6 3.2 VIN N (V) 3.8 4.4 5 Fig.32 RONN vs. VIN 10/14 Advanced Power Electronics Corp. Typical Performance Characteristics APE8937-HF-3 (continued) 2.0 31 1.8 29 1.6 1.4 25 VEN (V) RON (mΩ) 27 23 21 1.2 1.0 0.8 0.6 19 0.4 VBIA AS=VIN=5V 17 VBIA AS=VIN=3.3V 15 -40 -20 0 20 0 40 60 TJ (°C) 80 100 120 0 Fig.33 RONN vs. Tempera ature VEN-H 0.2 VEN-L 0.0 0 -40 -20 0 20 4 40 60 TJ (°C) 80 100 120 Fig.34 EN E Threshold d vs. Temperature 70 60 IBIAS (uA) 50 40 30 20 VBIA AS=VIN=5V 10 VBIA AS=VIN=3.3V 0 -40 -20 0 20 0 40 60 TJ (°C) 80 100 120 0 Fig.35 Quiescent Current vs. Temperature T ©2014 Advanced Power Electronics Corp. USA www.a-powerusa.com 11/14 Advanced Power Electronics Corp. APE8937-HF-3 Application Information On/Off Con ntrol The load sw witch is conttrolled by the e EN pin. Th he EN pin is s active high h and has a low thresho old making itt capable of interfacing with low voltag ge signals. The T EN pin ca an be used with w standard d 1.2V, 1.8V, 2.5V 2 or 3.3V V GPIO logic threshold. Do D not leave the t EN pin flo oating. Output Rise Time Control The rise tim me of VOUT is adjustable e by an exte ernal capacitor on the CT T pin. The risse time show wn in the table w below is the typical measured value. Please refer to it for determining rise time. V VOUT Rise Time, T tR(µs), 10%~90%, VBIAS=V = EN=5V, CINN=1uF, COUT=0.1µF, = RL=1 10Ω CT (nF) V VIN=0.8V V VIN=1.05V VIN=1.2V VIN=1.5V VIN=1.8V VIN=2.5V VIN=3.3V VIN=5V 0 29 38 40 48 53 63 76 100 0.22 85 114 125 168 190 260 329 501 0.47 151 208 218 287 334 435 601 946 1 302 397 427 548 673 926 1247 1911 2.2 610 865 924 1227 1448 1979 2736 4176 4.7 1228 1723 1872 2450 3000 4043 5583 8681 10 2227 3418 3624 4894 5689 8159 10830 16910 <Table 1> Input Capa acitor An input capacitor is reccommended to be placed d between VIN and GND to limit the vvoltage drop on the inputt supply durin ng high curre ent applicatio on. Output Cap pacitor Setting a CIN greater th han the COUTT is highly re ecommended d. Since the internal bod dy diode is in n the NMOS S switch, this prevents the e current flow ws through th he body diod de from VOU UT to VIN wh hen the syste em supply iss removed. ©2014 Advanced Power Electronics Corp. USA www.a-powerusa.com 12/14 Advanced Power Electronics Corp. Application Information APE8937-HF-3 (continued) Input Capa acitor An input cap pacitor is reccommended to be placed d between VIN and GND to limit the voltage drop on the input supply durin ng high curre ent applicatio ons. Output Cap pacitor Setting a CIN greater th han the COUTT is highly re ecommended d. Since the MOSFET switch has an internal body diode, this prevents the flow of current through the body diode from VOUT to VIN when the system supply is removed. Layout Con nsiderations s The figure below shows the suggested layout for the APE8937-HF-3. The list below will help with layout. he high curre ent paths (VIN N, VOUT and d GND; blue circle) wide and short to o obtain the best b effect. 1. Keep th 2. The inp put and outpu ut capacitorss should be as close to the device as possible to minimize any parasitic trace inductances. 3. Place thermal vias under the exposed pad of the device (green circle). This helps with thermal diffusion away fro om the devicce. E8937 Referrence Layoutt Fig.36 APE ©2014 Advanced Power Electronics Corp. USA www.a-powerusa.com 13/14 Advanced Power Electronics Corp. APE8937-HF-3 Package Dimensions: DFN2X2-8L E E2 D Millimeters SYMBOLS D2 MIN NOM MAX A 0.70 0.75 0.80 A1 0.005 0.030 0.060 A2 0.145 0.170 0.190 b 0.20 0.25 0.30 D 1.95 2.00 2.05 D2 0.80 0.90 1.00 E 1.95 2.00 2.05 E2 1.50 1.60 1.70 e 1 e L L 0.50 0.20 0.30 0.40 b BOTTOM VIEW 1. All dimensions are in millimeters. 2. Dimensions do not include mold protrusions. A A2 A1 Marking Information 8937 YWWS Product : APE8937 Date/lot code (YWWS) Y: Last digit of the year WW: Work week S: Lot code sequence ©2014 Advanced Power Electronics Corp. USA www.a-powerusa.com 14/14