GWS9293

DATASHEET
Dual 20V N-Channel Power MOSFET
GWS9293
Features
The GWS9293 is a dual 20V, 16mΩ, N-channel power MOSFET
used for Li ion battery protection. It is offered in a 2mmx2mm
MLPD with a very low thickness profile, 1mm maximum
thickness. The device has extremely high power density,
reducing the board size of Li-ion battery power system.
Designed for handheld devices with a high level of ESD
protection.
• Low rDS(ON) in a small footprint
• Ultra low gate charge and figure of merit
• MLPD 2mmx2mm package
• Low thermal resistance
Applications
• Li-ion battery protection
• Portable devices, cell phones, PDA
PRODUCT SUMMARY
V(BR)DSS
ID = 250µA
20V
Minimum
• Rated for short-circuit and overcurrent protection
rDS(ON)
VGS = 4.5V
16mΩ
Typical
• Integrated gate diodes provide ESD protection of 2.5kV HBM
FET1
FET2
Gate1
3
Gate2
G2
4
Source1
Source2
G1
2
S1
FIGURE 1. EQUIVALENT CIRCUIT
December 21, 2015
FN8785.1
S2
1
1
FIGURE 2. MLPD BOTTOM SIDE
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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GWS9293
Ordering Information
PART NUMBER
GWS9293
93
Pin Configuration
GWS9293
(4 LD QFN)
BOTTOM VIEW
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TEMP RANGE
(°C)
PART MARKING
-55 to +150
PACKAGE
(RoHS Compliant)
4 Ld QFN
Pin Descriptions
PIN #
PIN NAME
DESCRIPTION
1
S1
Source of FET1
G2
S2
2
G1
Gate of FET1
3
4
3
G2
Gate of FET2
4
S2
Source of FET2
2
1
G1
S1
2
FN8785.1
December 21, 2015
GWS9293
Absolute Maximum Ratings
(Note 1)
Drain-to-Source Voltage (VDS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Gate-to-Source Voltage (VGS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±12V
Drain Current (ID) (Note 2)
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . .9.4A (10s), 6.0A (Steady State)
TA = +70°C . . . . . . . . . . . . . . . . . . . . . . . . 7.5A (10s), 4.8A (Steady State)
Drain Current (RthjFoot)
TF = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14.1A (Steady State)
Pulsed Drain Current (IDM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A
ESD Rating
Human Body Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2.5kV
Thermal Information
Thermal Resistance (Typical)
JA (°C/W) JF (°C/W)
t ≤10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
35
Steady State . . . . . . . . . . . . . . . . . . . . . . . . .
85
16
Maximum Power Dissipation (PD) (Note 2)
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . 3.6W (10s) 1.47W (Steady State)
TA = +70°C . . . . . . . . . . . . . . . . . . . . .2.29W (10s) 0.94W (Steady State)
Junction and Storage Temperature Range (TJ, Tstg). . . . .-55°C to +150°C
Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see TB493
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
1. TJ = +25°C unless otherwise noted.
2. Surface mounted on FR4 board.
Electrical Characteristics
SYMBOL
TJ = +25°C unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
(Note 3)
TYP
(Note 4)
MAX
(Note 3)
UNIT
STATIC
V(BR)DSS Drain-to-Source Breakdown Voltage
VGS = 0V, ID = 250µA
20
V
IDSS
Zero Gate Voltage Drain Current
VGS = 0V, VDS = 20V
1
µA
IGSS
Gate Body Leakage
VDS = 0V VGS = ±8V
±10
µA
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 1mA
0.5
0.8
1.5
V
rDS(ON)
Drain-to-Source On-State Resistance (Note 5)
(per MOSFET)
VGS = 4.5V, ID = 3A
11
16
17
mΩ
VGS = 4.0V, ID = 3A
11
17
19
mΩ
VGS = 3.1V, ID = 3A
12
19
22
mΩ
VGS = 2.5V, ID = 3A
15
22
28
mΩ
VGS = 4.5V, ISS = 3A
22
31
35
mΩ
VGS = 4.0V, ISS = 3A
23
33
37
mΩ
VGS = 3.1V, ISS = 3A
24
38
44
mΩ
VGS = 2.5V, ISS = 3A
30
44
55
mΩ
Source-to-Drain Diode Voltage
VGS = 0, IS = 6A
0.5
0.8
1
V
Qg
Total Gate Charge
VDS = 16V, ID = 6.0A, VGS = 4.0V
3.5
nC
Ciss
Input Capacitance
VDS = 10V, VGS = 0V, f = 1MHz
400
pF
Coss
Output Capacitance
120
pF
Crss
Reverse Transfer Capacitance
100
pF
rSS(ON)
VSD
Source-to-Source On-State Resistance (Note 5)
(both MOSFETs in series)
DYNAMIC
NOTES:
3. Compliance to datasheet limits is assured by one or more methods: production test, characterization and/or design..
4. Typical values are for TA = +25°C.
5. Good Kelvin measurement required.
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GWS9293
Test Circuit Examples for Measuring FET1 Key Parameters
S2
S2
A
G2
G2
G1
G1
+V
A
±V
S1
S1
FIGURE 3. ISSS TEST CIRCUIT
FIGURE 4. IGSS TEST CIRCUIT
S2
S2
A
G2
G2
V
V
G1
G1
+V
±V
S1
S1
FIGURE 6. rSS(ON) TEST CIRCUIT
FIGURE 5. VGS(th) TEST CIRCUIT
S2
4.5V
G2
V
V
G1
S1
FIGURE 7. VFS-S TEST CIRCUIT
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Typical Performance Curves
10
9
50
40
IS-SOURCE CURRENT (A)
IS-SOURCE CURRENT (A)
60
VGS =
VGS = 4.0V
30
VGS = 3.1V
20
VGS = 2.5V
10
8
7
6
TJ = +125°C
5
4
2
TJ = +25°C
1
0
0
1
1
2
2
3
0
3
0
1
VSS - SO URCE-TO-SOURCE VOLTAGE (V)
VGS = 2.5V
80
VGS = 3.1V
70
60
VGS = 4.0V
50
40
30
20
VGS = 4.5V
10
0
1
10
100
700
600
500
400
300
IS = 3A
200
100
0
0
5
VGS = 2.5V
VGS = 3.1V
VGS = 4.0V
50
40
30
VGS = 4.5V
20
10
-50
-25
0
25
50
75
100
TJ - JUNCTION TEMPERATURE
125
(oC)
FIGURE 12. SOURCE-TO-SOURCE ON-STATE RESISTANCE vs
JUNCTION TEMPERATURE
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5
15
150
FIGURE 11. SOURCE-TO-SOURCE ON-STATE RESISTANCE vs
GATE-TO-SOURCE VOLTAGE
VGS(th) - GATE THRESHOLD VOLTAGE (V)
rSS(ON) - ON-STATE RESISTANCE (mΩ)
90
60
10
VGS - GATE-TO-SOURCE VOLTAGE (V)
FIGURE 10. SOURCE-TO-SOURCE ON-STATE RESISTANCE vs SOURCE
CURRENT
70
4
800
IS - SOURCE CURRENT (A)
80
2
3
VGS - GATE-TO-SOURCE (V)
FIGURE 9. TRANSFER CHARACTERISTICS
rSS(ON) - ON-STATE RESISTANCE (mΩ)
rSS(ON) - ON-STATE RESISTANCE (mΩ)
FIGURE 8. OUTPUT CHARACTERISTICS
90
TJ = -25°C
TJ = +75°C
3
1.2
1.0
IS = 1mA
0.8
0.6
0.4
0.2
-50
-25
0
25
50
75
100
125
150
TJ - JUNCTION TEMPERATURE (oC)
FIGURE 13. GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE
FN8785.1
December 21, 2015
GWS9293
(Continued)
100
4.0
VSS = 16V
IS = 6A
VGS = 0 to 4.0V
3.5
3.0
IF - DIODE CURRENT (A)
VGS - GATE-TO-SOURCE VOLTAGE (V)
Typical Performance Curves
2.5
2.0
1.5
1.0
TJ = +75°C
TJ = +25°C
0.5
TJ = -25°C
1
0.0
0
1
2
3
QG - TOTAL GATE CHARGE (nC)
0.0
4
FIGURE 14. GATE CHARGE
IS-SOURCE CURRENT (A)
100
Ciss
Coss
1000
Crss
100
10
0
5
0.2
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSS-SOURCE TO SOURCE VOLTAGE (V)
2.2
FIGURE 15. SOURCE-TO-SOURCE DIODE FORWARD VOLTAGE
10000
C-CAPACITANCE (pF)
TJ = +125°C
10
10
15
rSS(ON) LIMITED
VGS = 4.5V
10
1ms
1
0.1
10ms
TA = +25oC,
SINGLE PULSE
100ms
DC
0.01
20
0.1
VSS - SOURCE-TO-SOURCE VOLTAGE (V)
1
10
100
VSS - SOURCE-TO-SOURCE VOLTAGE (V)
FIGURE 16. CAPACITANCE
FIGURE 17. MAXIMUM RATED FORWARD BIASED SAFE OPERATING
AREA
1.00
r(t) - TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
0.50
0.20
0.10
0.10
0.05
0.02
SINGLE PULSE
0.01
1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
t - TIME (s)
FIGURE 18. TRANSIENT THERMAL RESPONSE, JUNCTION-TO-AMBIENT
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Revision History
The revision history provided is for informational purposes only and is believed to be accurate, but not warranted. Please go to the web to make sure that
you have the latest revision.
DATE
REVISION
CHANGE
December 21, 2015
FN8785.1
Added “Note 1. TJ = +25°C unless otherwise noted.” to Abs Max on page 3.
October 30, 2015
FN8785.0
Initial release.
About Intersil
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address some of the largest markets within the industrial and infrastructure, mobile computing and high-end consumer markets.
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Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time
without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be
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GWS9293
Package Outline and Dimensions
Pin
1
2
3
4
Symbol
Min
A
0.70
A1
b
Nom
Node
Source 1
Gate 1
Gate 2
Source 2
Max
1.00
0.02
0.275
0.05
0.400
D
2.00 BSC
E
2.00 BSC
e
0.65 BSC
L
0.55
0.60
0.65
h
0.10
0.15
0.20
All dimensions in mm
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Mounting Pad Layout and Dimensions
c
a
d
b
Symbol
Min
Nom
Max
a
0.788
0.838
0.888
b
0.358
0.381
0.404
c
d
0.65 BSC
2.22
2.365
2.50
All dimensions in mm
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