SEMICONDUCTOR KTC3880S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. FEATURES E B L L Small Reverse Transfer Capacitance 2 A H 1 P RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 4 V Collector Current IC 20 mA Emitter Current IE -20 mA Collector Power Dissipation PC 150 mW Junction Temperature Tj 150 Tstg -55 150 Storage Temperature Range J SYMBOL MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 M K CHARACTERISTIC P N ) C MAXIMUM RATING (Ta=25 3 G Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz). D : Cre=0.7pF(Typ.) DIM A B C D E G H J K L M N P 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 Marking h FE Rank Lot No. AQ Type Name ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=18V, IE=0 - - 0.5 A Emitter Cut-off Current IEBO VEB=4V, IC=0 - - 0.5 A 40 - 200 - 0.7 - pF 300 550 - MHz - - 30 pS - 2.5 5.0 15 18 - hFE (Note) DC Current Gain VCE=6V, IC=1mA Reverse Transfer Capacitance Cre VCB=6V, f=1MHz, IE=0 Transition Frequency fT VCE=6V, IC=1mA CC rbb' Collector-Base Time Constant Noise Figure NF Power Gain Gpe Note : hFE Classification 2003. 6. 20 R:40 80, O:70 140, Revision No : 5 VCB=6V, IE=-1mA, f=30MHz VCC=6V, IE=-1mA, f=100MHz (Fig.) Y:100 dB 200 1/6 KTC3880S Fig. Gpe TEST CIRCUIT 6pF 0.01µF OUTPUT R L=50Ω DUT INPUT L1 15pF 2.2kΩ Rg =50Ω 1000pF 0.01µ F 1000pF 1kΩ 0.02µF 0.02µF VCC -VE (I E =-1mA) L1 : 0.8mmΦ SILVER PLATED COPPER WIRE, 4Turns. 10mm ID, 8mm Length. y PARAMETERS (Typ.) (1) COMMON EMITTER (VCE=6V, IE=-1mA, f=100MHz) CHARACTERISTIC SYMBOL TYP. UNIT Input Conductance gie 2.9 mS Input Capacitance Cie 10.2 pF Reverse Transfer Admittance |yre| 0.33 S re -90 |yfe| 40 fe -20 Output Conductance goe 45 S Output Capacitance Coe 1.1 pF SYMBOL TYP. UNIT Input Conductance gib 34 mS Input Capacitance Cib -10 pF Reverse Transfer Admittance |yrb| 0.27 S rb -105 Phase Angle of Reverse Transfer Admittance Forward Transfer Admittance Phase Angle of Forward Transfer Admittance mS (2) COMMON BASE (VCE=6V, IE=-1mA, f=100MHz) CHARACTERISTIC Phase Angle of Reverse Transfer Admittance |yfb| Forward Transfer Admittance Phase Angle of Forward Transfer Admittance fb 34 mS 165 Output Conductance gob 45 S Output Capacitance Cob 1.1 pF 2003. 6. 20 Revision No : 5 2/6 KTC3880S h FE - I C STATIC CHARACTERISTICS 16 VCE =6V 12 150 100 8 4 I B =50µA 0 0 BASE-EMITTER VOLTAGE VBE (V) DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) 300 500 450 400 350 300 250 200 20 0.2 COMMON EMITTER VCE =6V Ta=25 C 100 50 30 10 0.1 0.4 VCE =6V 600 400 200 0 BASE CURRENT I B ( µA) 10 20 1 3 5 10 20 COLLECTOR CURRENT I C (mA) COMMON EMITTER Ta=25 C 0.6 0.8 0.3 0.5 30 COLLECTOR-EMITTER VOLTAGE VCE (V) INPUT CAPACITANCE C ie (pF) INPUT CONDUCTANCE g ie (mS) C ie , g ie - I E 30 C ie 10 g ie 5 3 COMMON EMITTER V CE =6V f=100MHz Ta=25 C 1 -0.2 -0.5 -1 -5 -3 -10 EMITTER CURRENT I E (mA) 5 3 1 0.5 100 COMMON EMITTER VCE =6V f=100MHz Ta=25 C g oe 50 30 C oe 10 5 -0.2 -0.5 -1 -3 -5 EMITTER CURRENT I E (mA) 2003. 6. 20 Revision No : 5 -10 -300 -100 -50 REVERSE TRANSFER ADMITTANCE y re (mS) 10 300 y re PHASE ANGLE OF REVERSE TRANSFER ADMITTANCE Θ re ( ) 30 OUPUT CONDUCTANCE g oe (µS) OUPUT CAPACITANCE C oe (pF) C oe , g oe - I E , Θ re - I E 3 COMMON EMITTER VCE =6V f=100MHz Ta=25 C 1 0.5 yre 0.3 Θ re 0.1 0.05 -0.2 -0.5 -1 -3 -5 -10 EMITTER CURRENT I E (mA) 3/6 KTC3880S -50 -30 -10 -5 -100 100 INPUT CAPACITANCE C ib (pF) -100 C ib , g ib - I E , Θ fe - I E yfe 50 30 Θ fe COMMON BASE VCE =6V 10 f=100MHz Ta=25 C 5 -0.2 -0.5 -3 -1 -5 -50 -30 -10 INPUT CONDUCTANCE g ib (mS) FORWARD TRANSFER ADMITTANCE y (mS) fe PHASE ANGLE OF FORWARD TRANSFER ADMITTANCE Θ fe ( ) yfe 100 C ib 30 COMMON BASE VCB =6V 10 f=100MHz Ta=25 C 5 -0.2 -5 -10 g ib 50 EMITTER CURRENT I E (mA) -0.5 1 0.5 COMMON EMITTER VCB =6V f=100MHz Ta=25 C g ob 50 30 C ob 10 5 -0.2 -0.5 -1 -3 -5 -10 1K 500 300 100 50 FORWARD TRANSFER ADMITTANCE y (mS) fb 3 100 yfb PHASE ANGLE OF FORWARD TRANSFER ADMITTANCE Θ fb ( ) 5 OUPUT CONDUCTANCE gob (µS) OUPUT CAPACITANCE C ob (pF) 10 200 100 -500 -300 -100 -50 0.3 0.1 0.05 -0.2 yfb 30 Θ fb 10 5 -0.2 -0.5 -3 -1 -5 -10 20 y rb Θ rb -1 -3 -5 EMITTER CURRENT IE (mA) 2003. 6. 20 50 C ie , g ie - V CE COMMON BASE VCB =6V f=100MHz Ta=25 C -0.5 , Θ fb - I E COMMON BASE VCB =6V f=100MHz Ta=25 C , Θ rb - I E 1 0.5 -10 EMITTER CURRENT I E (mA) INPUT CAPACITANCE C ie (pF) INPUT CONDUCTANCE g ie (mS) -1k REVERSE TRANSFER ADMITTANCE y rb (mS) PHASE ANGLE OF FORWARD TRANSFER ADMITTANCE Θ rb ( ) EMITTER CURRENT I E (mA) y rb -5 EMITTER CURRENT I E (mA) C ob , g ob - I E 20 -3 -1 Revision No : 5 -10 C ie 10 COMMON BASE I E =-1mA 5 f=100MHz 1 Ta=25 C g ie 3 1 3 5 10 30 COLLECTOR-BASE VOLTAGE V CE (V) 4/6 KTC3880S C oe , g oe - VCE 3 1 COMMON EMITTER I E =-1mA f=100MHz Ta=25 C 50 g oe 30 C oe 10 5 0.5 1 3 5 10 30 -100 -50 -30 -10 -5 50 y fe 30 Θ fe COMMON EMITTER I E =-1mA 10 f=100MHz Ta=25 C 5 1 y re 0.3 COMMON EMITTER I E =-1mA f=100MHz Ta=25 C Θ re 0.1 0.05 50 -100 1 3 5 -50 -30 -10 -5 30 10 50 30 COMMON BASE I E =-1mA 10 5 1 3 1 0.5 2003. 6. 20 100 g ob 50 30 C ob 10 5 1 3 5 10 30 COLLECTOR-BASE VOLTAGE VCB (V) Revision No : 5 3 yfb 300 100 FORWARD TRANSFER ADMITTANCE yfb (mS) 5 COMMON BASE I E =-1mA f=100MHz Ta=25 C f=100MHz Ta=25 C C ib 5 10 30 COLLECTOR-BASE VOLTAGE V CB (V) PHASE ANGLE OF FORWARD TRANSFER ADMITTANCE Θ fb ( ) 10 OUPUT CONDUCTANCE g ob (µS) OUPUT CAPACITANCE C ob (pF) C ob , g ob - VCB 300 30 g ib COLLECTOR-EMITTER VOLTAGE VCE (V) 30 10 100 INPUT CONDUCTANCE g ib (mS) 100 5 C ib , g ib - VCB INPUT CAPACITANCE C ib (pF) REVERSE TRANSFER ADMITTANCE y (mS) re PHASE ANGLE OF REVERSE TRANSFER ADMITTANCE Θ re ( ) 300 , Θ re - V CE 1 0.5 3 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (V) y re , Θfe - VCE 100 FORWARD TRANSFER ADMITTANCE y (mS) fe 5 100 PHASE ANGLE OF FORWARD TRANSFER ADMITTANCE Θ fe ( ) IOUUT CONDUCTANCE goe (µS) OUTPUT CAPACITANCE C oe (pF) 10 yfe , Θ fb - VCB 300 COMMON BASE I E =-1mA f=100MHz Ta=25 C 100 50 y fb 30 Θ fb 10 1 3 5 10 30 COLLECTOR-BASE VOLTAGE VCB (V) 5/6 KTC3880S -100 -50 , Θ rb - V CB 2 y ie - f 20 COMMON BASE I E =-1mA 1 INPUT SUSCEPTANCE b ie (mS) -300 REVERSE TRANSFER ADMITTANCE y rb (mS) PHASE ANGLE OF REVERSE TRANSFER ADMITTANCE Θ rb ( ) yrb f=100MHz Ta=25 C 0.5 y rb 0.3 Θ rb 0.1 0.05 1 5 3 10 f=200MHz 16 150 12 100 8 COMMON EMITTER VCE =6V 4 0 30 50 27 10.7 I E =-1mA Ta=25 C 5 0 COLLECTOR-BASE VOLTAGE V CB (V) 10 1600 150 100 0 COMMON EMITTER VCE =6V 50 I E =-1mA 27 10.7 0 Ta=25 C 20 40 60 80 100 120 FORWARD TRANSFER SUSCEPTANCE b fe (mS) OUTPUT SUSCEPTANCE b oe (µS) f=200MHz 400 0 -10 COMMON EMITTER VCE =6V f=10.7MHz 27 50 I E =-1mA Ta=25 C 100 200 -30 -40 0 10 COLLECTOR POWER DISSIPATION PC (mW) REVERSE TRANSFER SUSCEPTANCE b re (µS) f=10.7MHz 27 COMMON EMITTER VCE =6V 50 I E =-1mA Ta=25 C 100 -400 150 -600 200 -120 -80 -40 0 REVERSE TRANSFER CONDUCTANCE g re (µS) 2003. 6. 20 Revision No : 5 30 40 50 Pc - Ta 0 -160 20 FORWARD TRANSFER CONDUCTANCE g fe (mS) y re - f -800 -200 30 150 -20 OUTPUT CONDUCTANCE g oe (µS) -200 25 y fe - f 2000 800 20 INPUT CONDUCTANCE g ie (mS) y oe - f 1200 15 200 150 100 50 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 6/6