STK5F1U3C3D-E Inverter Power IPM for 3-phase Motor Drive www.onsemi.com Overview This “Inverter Power IPM” is highly integrated device containing all High Voltage (HV) control from HV-DC to 3-phase outputs in a single DIP module (Dual-In line Package). Output stage uses IGBT/FRD technology and implements Under Voltage Protection (UVP) and Over Current Protection (OCP) with a Fault Detection output flag. Internal Boost diodes are provided for high side gate boost drive. Function Single control power supply due to Internal bootstrap circuit for high side pre-driver circuit All control input and status output are at low voltage levels directly compatible with microcontrollers Built-in cross conduction prevention Externally accessible embedded thermistor for substrate temperature measurement The level of the over-current protection current is adjustable with the external resistor, “RSD” Low switching noise by optimized the gate resistor Certification UL1557 (File Number: E339285) Specifications Absolute Maximum Ratings at Tc = 25C Parameter Symbol Remarks Ratings Unit Supply voltage VCC P to N, surge < 500V *1 450 V Collector-emitter voltage VCE P to U,V,W or U,V,W to N P, N, U, V, W terminal current V P, N, U, V, W terminal current, Tc=100C P, N, U, V, W terminal current, PW=1ms 600 ±30 ±15 ±49 A VB1 to VS1,VB2 to VS2,VB3 to VS3,VDD to VSS *2 20 V HIN1, 2, 3, LIN1, 2, 3 0.3 to VDD V FAULT terminal IGBT per channel 0.3 to VDD 56.8 V W 150 C 40 to +125 C 20 to +100 1.17 2000 C Nm VRMS Output current Output peak current Pre-driver supply voltage Input signal voltage FAULT terminal voltage Maximum loss Io Iop VD1,2,3,4 VIN VFAULT Pd Junction temperature Tj Storage temperature Tstg Operating temperature Tightening torque Withstand voltage Tc MT Vis IGBT,FRD HIC case A screw part at use M4 type screw *3 50Hz sine wave AC 1 minute *4 A Reference voltage is N terminal = VSS terminal voltage unless otherwise specified. *1: Surge voltage developed by the switching operation due to the wiring inductance between the P and N terminals. *2: Terminal voltage: VD1=VB1VS1, VD2=VB2VS2, VD3=VB3VS3, VD4=VDDVSS. *3: Flatness of the heat-sink should be 0.25mm and below. *4: Test conditions: AC 2500V, 1 second. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 16 of this data sheet. © Semiconductor Components Industries, LLC, 2015 March 2015 - Rev. 1 1 Publication Order Number : STK5F1U3C3D-E/D STK5F1U3C3D-E Electrical Characteristics at Tc 25C, VD1, VD2, VD3, VD4=15V Parameter Symbol Conditions Ratings Test circuit Min. Typ. Max. Unit Power output section Collector to emitter cut-off current Bootstrap diode reverse current ICE IR(BD) VCE=600V VR(BD)=600V Ic=30A Collector to emitter saturation voltage VCE(sat) Junction to case thermal resistance VF - 100 μA - 100 μA Upper side - 1.7 2.5 Lower side - 2.2 3.1 - 1.4 - Lower side - 1.7 - Upper side - 1.8 2.7 Upper side Ic=15A, Tj=100C IF=30A Diode forward voltage - Fig.1 Lower side Upper side IF=15A, Tj=100C Fig.2 Fig.3 Lower side - 2.3 3.1 - 1.45 - V V - 1.7 θj-c(T) IGBT - - 1.8 - C/W θj-c(D) FWD - - 2.3 - C/W - 0.05 0.4 - 1.0 4.0 - - Control (Pre-driver) section VD1, 2, 3=15V Pre-drive power supply consumption current ID High level input voltage Vin H HIN1, HIN2, HIN3, - 2.5 Low level input voltage Vin L IIN+ LIN1, LIN2, LIN3 to VSS - - - 0.8 V Logic 1 input leakage current VIN=+3.3V - - 100 195 μA Logic 0 input leakage current IIN VIN=0V - - RBoot - - 39 1 Bootstrap limiting resistor μA Ω Rb - - 30 - Ω - 47 - Ω 37 - 49 A - - 2.0 - us - 10.6 11.1 11.6 V - 10.4 10.9 11.4 V - - 0.2 - V Gate resistor VD4=15V Rg Fig.4 - - mA V Protection section Over-current protection current Over-current protection noise filter time constant Vdd and VBx supply undervoltage positive going input threshold Vdd and VBx supply undervoltage negative going input threshold Vdd and VBx supply undervoltage Ilockout hysteresis ISD PW=100μs,RSD=0Ω ISDNF VddUV+ VBxUV+ VddUVVBxUVVddUVH VBxUVH Fig.5 FAULT terminal sink current IOSD VFAULT=0.1V - 1 1.5 - mA FAULT clearance delay time FLTCLR From time fault condition clear - 1.3 1.65 2.5 ms Switching character Switching time tON tOFF Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Diode reverse recovery energy Erec Io=30A, Inductive load Io=30A, VCC=300V, VD=15V, L=690μH Fig.6 Io=15A, VCC=300V, VD=15V, L=690μH, Tc=100C - 0.8 1.5 μs - 1.0 2.0 μs - 1070 - μJ - 890 - μJ - 1960 - μJ - 590 - μJ - 590 - μJ - 1180 - μJ - 95 - μJ - 145 - ns Diode reverse recovery time Trr Reverse bias safe operating area RBSOA Io=15A, VCC=300V, VD=15V, L=690μH, Tc=100C Io = 49A, VCE=450V Short circuit safe operating area SCSOA VCE=400V, Tc=100C - 4 - - μs Electric current output signal level ISO Io=30A - 0.384 0.405 0.427 V - Full square Reference voltage is VSS terminal voltage unless otherwise specified. *1: The lower side’s VCE(sat) and VF include a loss by the shunt resistance. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 STK5F1U3C3D-E Notes 1. When the internal protection circuit operates, a Fault signal is turned ON (When the Fault terminal is low level, Fault signal is ON state : output form is open DRAIN) but the Fault signal does not latch.After protection operation ends,it returns automatically within about 18ms to 80ms and resumes operation beginning condition. So, after Fault signal detection, set all input signals to OFF (Low) at once.However, the operation of pre-drive power supply low voltage protection (UVLO:with hysteresis about 0.2V) is as follows. Upper side: The gate is turned off and will return to regular operation when recovering to the normal voltage, but the latch will continue till the input signal will turn ‘low’. Lower side: The gate is turned off and will automatically reset when recovering to normal voltage. It does not depend on input signal voltage. 2. When assembling the IPM on the heat sink with M4 type screw, tightening torque range is 0.79 Nm to 1.17 Nm. 3. The pre-drive low voltage protection is the feature to protect devices when the pre-driver supply voltage falls due to an operating malfunction. Pin Assignment Pin No. 1 Name Description Pin No. Name Description VB1 High side floating supply voltage 1 44 P Positive bus input voltage 2 VS1 High side floating supply offset voltage 43 P Positive bus input voltage 3 - Without pin 42 P Positive bus input voltage 4 VB2 High side floating supply voltage 2 41 - Without pin 5 VS2 High side floating supply offset voltage 40 N Negative bus input voltage 6 - Without pin 39 N Negative bus input voltage 7 VB3 High side floating supply voltage 3 38 N Negative bus input voltage 8 VS3 High side floating supply offset voltage 37 - Without pin 9 - Without pin 36 U U-phase output 10 HIN1 Logic input high side driver-Phase1 35 U U-phase output 11 HIN2 Logic input high side driver-Phase2 34 U U-phase output 12 HIN3 Logic input high side driver-Phase3 33 - Without pin 13 LIN1 Logic input low side driver-Phase1 32 V V-phase output 14 LIN2 Logic input low side driver-Phase2 31 V V-phase output 15 LIN3 Logic input low side driver-Phase3 30 V V-phase output 16 FAULT Fault out (open drain) 29 - Without pin 17 ISO Current monitor pin 28 W W-phase output 18 TH Thermistor out 27 W W-phase output 19 VDD +15V main supply 26 W W-phase output 20 VSS Negative main supply 25 - Without pin 21 ISD Over-current protection level setting pin 24 NC - 22 NC - 23 NC - www.onsemi.com 3 STK5F1U3C3D-E Block Diagram NC(23,24) U(34,35,36) V(30,31,32) W(26,27,28) VB1(1) VS1(2) VB2(4) VS2(5) VB3(7) VS3(8) P (42,43,44) DB DB DB U.V. U.V. U.V. RB N (38,39,40) Shunt-Resistor ISO(17) Thermistor TH(18) Level Shifter Level Shifter Level Shifter HIN1(10) HIN2(11) HIN3(12) Logic Logic Logic LIN1(13) LIN2(14) LIN3(15) Shutdown VDD(19) S + Under voltage Q - Detect Timer VSS(20) R Vref Latch time about 1.3 to 2.5ms ISD(21) FAULT(16) NC(22) www.onsemi.com 4 STK5F1U3C3D-E Test Circuit (The tested phase: U+ shows the upper side of the U phase and U shows the lower side of the U phase.) ICE / IR(BD) M N U+ 42 34 V+ 42 30 W+ 42 26 M N U(BD) 1 20 V(BD) 4 20 W(BD) 7 20 U34 38 V30 38 W26 38 ICE 1 M A VD1=15V 2 4 VD2=15V 5 VCE 7 VD3=15V 8 19 VD4=15V 20 N Fig.1 VCE(SAT) (Test by pulse) M N m U+ 42 34 10 V+ 42 30 11 W+ 42 26 12 U34 17 13 V30 19 14 W26 21 15 1 M VD1=15V 2 4 VD2=15V 5 V Ic 7 VD3=15V VCE(SAT) 8 19 VD4=15V 5V m 20 21 Fig.2 VF (Test by pulse) M N U+ 42 34 V+ 42 30 N W+ 42 26 U34 38 V30 38 W26 38 M V N Fig.3 ID M N VD1 1 2 VD2 4 5 VD3 7 8 VD4 19 20 ID A M VD* N Fig.4 www.onsemi.com 5 VF IF STK5F1U3C3D-E ISD VD1=15V Input signal (0 to 5V) VD2=15V 1 34 2 4 5 Io 7 VD3=15V ISD Io 8 19 VD4=15V 100μs Input signal 13 20 38 21 Fig.5 Switching time (The circuit is a representative example of the lower side U phase.) 42 1 Input signal (0 to 5V) VD1=15V 2 4 VD2=15V 5 34 90% Vcc 7 Io VD3=15V 10% tON CS 8 19 Io VD4=15V tOFF Input signal 13 20 38 21 Fig.6 RB-SOA (The circuit is a representative example of the lower side U phase.) Input signal (0 to 5V) 42 1 VD1=15V 2 4 VD2=15V Io 5 34 Vcc 7 VD3=15V CS 8 19 Io VD4=15V Input signal 13 20 38 21 Fig.7 www.onsemi.com 6 STK5F1U3C3D-E Logic Timing Chart VBS undervoltage protection reset signal ON HIN1,2,3 OFF LIN1,2,3 *2 VDD VDD undervoltage protection reset voltage *3 VBS undervoltage protection reset voltage VB1,2,3 *4 -------------------------------------------------------ISD operation current level------------------------------------------------------- -terminal (BUS line) Current FAULT terminal Voltage (at pulled-up) ON *1 Upper U, V, W OFF *1 Lower U ,V, W Automatically reset after protection (1.3ms to 2.5ms) Fig. 8 Notes *1 : Diagram shows the prevention of shoot-through via control logic. More dead time to account for switching delay needs to be added externally. *2 : When VDD decreases all gate output signals will go low and cut off all of 6 IGBT outputs. part. When VDD rises the operation will resume immediately. *3 : When the upper side gate voltage at VB1, VB2 and VB3 drops only, the corresponding upper side output is turned off. The outputs return to normal operation immediately after the upper side gat voltage rises. *4 : In case of over current detection, all IGBT’s are turned off and the FAULT output is asserted. Normal operation resumes in 1.3 to 2.5ms after the over current condition is removed. www.onsemi.com 7 STK5F1U3C3D-E Logic level table P(42,43,44) INPUT Ho HIN1,2,3 (10,11,12) LIN1,2,3 (13,14,15) IC Driver Lo U,V,W (34,35,36) (30,31,32) (26,27,28) HIN LIN OCP Ho Lo U,V,W FAULT H L OFF H L P OFF L H OFF L H N OFF L L OFF L L High Impedance OFF H H OFF L L High Impedance OFF X X ON L L High Impedance ON N(38,38,40) Fig.9 www.onsemi.com 8 OUTPUT STK5F1U3C3D-E Application Circuit Example CB + P 44 43 42 1 VB1 2 VS1 CB + 4 VB2 5 VS2 N CB +5.0V + RFault 7 VB3 8 VS3 U 36 35 34 RTH 10 HIN1 11 HIN2 Control Circuit V 32 31 30 12 HIN3 13 LIN1 W 28 27 26 14 LIN2 15 LIN3 16 FAULT 17 ISO 18 TH VDD=15V NC 24 23 Rpd CD Missing pin 3, 6, 9, 25, 29, 33, 37, 41 40 39 38 RSD 19 VDD 20 VSS1 21 ISD 22 NC Fig.10 www.onsemi.com 9 Vcc + CS + CI - STK5F1U3C3D-E Recommended Operating Conditions at Tc = 25C Parameter Supply voltage Pre-driver supply voltage Symbol VCC VD1,2,3 VD4 Input ON voltage VIN(ON) Input OFF voltage VIN(OFF) PWM frequency Dead time Allowable input pulse width Tightening torque Conditions P to N PWIN MT Typ Max 0 280 450 VB1 to VS1, VB2 to VS2, VB3 to VS3 12.5 15 17.5 VDD to VSS *1 13.5 15 16.5 HIN1,HIN2,HIN3, LIN1,LIN2,LIN3 3.0 - 5.0 0 - 0.8 fPWM DT Ratings Min Turn-off to turn-on (external) ON pulse width/OFF pulse width ‘M4’ type screw Unit V V V 1 - 20 kHz 2 - - μs 1 - - μs 0.79 - 1.17 Nm *1 Pre-driver power supply (VD4=15±1.5V) must have the capacity of Io=20mA (DC), 0.5A (Peak). Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. Usage Precautions 1. This IPM includes bootstrap diode and resistors. Therefore, by adding a capacitor “CB”, a high side drive voltage is generated; each phase requires an individual bootstrap capacitor. The recommended value of CB is in the range of 1 to 47μF, however this value needs to be verified prior to production. If selecting the capacitance more than 47μF (±20%), connect a resistor (about 20Ω) in series between each 3-phase upper side power supply terminals (VB1,2,3) and each bootstrap capacitor. When not using the bootstrap circuit, each upper side pre-drive power supply requires an external independent power supply. 2. It is essential that wirning length between terminals in the snubber circuit be kept as short as possible to reduce the effect of surge voltages. Recommended value of “CS” is in the range of 0.1 to 10μF. 3. “ISO” (pin17) is terminal for current monitor. 4. “FAULT” (pin16) is open DRAIN output terminal. (Active Low). Pull up resistor is recommended more than 5.6kΩ. 5. Inside the IPM, a thermistor used as the temperature monitor for internal subatrate is connected between VSS terminal and TH terminal, therefore, an external pull up resistor connected between the TH terminal and an external power supply should be used. The temperature monitor example application is as follows, please refer the Fig.11, and Fig.12 below. 6. The pull down resistor of 33kΩ is provided internally at the signal input terminals. An external resistor of 2.2k to 3.3kΩ should be added to reduce the influence of external wiring noise. 7. The over-current protection feature is not intended to protect in exceptional fault condition. An external fuse is recommended for safety. 8. When “N” and “VSS” terminal are short-circuited on the outside, level that over-current protection (ISD) might be changed from designed value as IPM. Please check it in your set (“N” terminal and “VSS” terminal are connected in IPM). 9. The over-current protection function operates normally when an external resistor RSD is connected between ISD and VSS terminals. Be sure to connect this resistor. The level of the overcurrent protection can be changed according to the RSD value. 10. When input pulse width is less than 1.0μs, an output may not react to the pulse. (Both ON signal and OFF signal) This data shows the example of the application circuit, does not guarantee a design as the mass production set. www.onsemi.com 10 STK5F1U3C3D-E The characteristic of thermistor Parameter Resistance Resistance B-Constant(25-50C) Temperature Range Symbol R25 R100 B Condition Tc=25C Tc=100C Min 97 4.93 4165 40 Typ. 100 5.38 4250 Max 103 5.88 4335 +125 Unit kΩ kΩ K C Fig.11 Variation of thermistor resistance with temperature Condition Pull-up resistor = 39kohm +/-1% Pull-up voltage of TH = 5V +/-0.3V Fig.12 Variation of temperature sense voltage with thermistor temperature www.onsemi.com 11 STK5F1U3C3D-E Maximum Phase current Motor Current vs. Frequency (Sine wave oparation,Vcc=300V,cosθ=0.8,ON Duty=96%) Phase Current : Io (A rms) 50 40 30 20 10 0 0 5 10 Switching Frequency : fc 15 20 (KHz) Fig.13 Maximum sinusoidal phase current as function of switching frequency at Tc=100C, VCC=300V Switching waveform 30 600 Current[A] Turn on 500 Voltage [V] 20 400 15 300 10 200 5 100 0 0 -5 Voltage [V] Current[A] 25 -100 0.0 0.2 0.4 0.6 0.8 1.0 Time [uS] Fig. 14 IGBT Turn-on. Typical turn-on waveform at Tc=100C, VCC=300V, Ic=15A 30 600 Current[A] Turn off 500 Voltage [V] 20 400 15 300 10 200 5 100 0 0 -5 Voltage [V] Current[A] 25 -100 0.0 0.2 0.4 0.6 0.8 1.0 Time [uS] Fig. 15 IGBT Turn-off. Typical turn-off waveform Tc=100C, VCC=300V, Ic=15A www.onsemi.com 12 STK5F1U3C3D-E CB capacitor value calculation for bootstrap circuit Calculate condition Item Upper side power supply Total gate charge of output power IGBT at 15V. Upper side power supply low voltage protection. Upper side power dissipation. ON time required for CB voltage to fall from 15V to UVLO Symbol VBS Qg UVLO IDmax Ton-max Value 15 0.266 12 400 - Unit V μC V μA s Capacitance calculation formula CB must not be discharged below to the upper limit of the UVLO - the maximum allowable on-time (Ton-max) of the upper side is calculated as follows: VBS × CB – Qg – IDmax × Ton-max = UVLO × CB CB = (Qg + IDmax × Ton-max) / (VD – UVLO) The relationship between Ton-max and CB becomes as follows. CB is recommended to be approximately 3 times the value calculated above. The recommended value of CB is in the range of 1 to 47μF, however, the value needs to be verified prior to production. Bootstrap capacitance Cb (uF) CB vs Tonmax 100 10 1 0.1 0.01 0.1 1 10 100 tonmax(ms) Fig.16 Ton-max vs CB characteristic www.onsemi.com 13 1000 STK5F1U3C3D-E ISD terminal The over-current protection function operates normally when an external resistor RSD is connected between ISD and VSS terminals. Be sure to connect this resistor. The OCP trip level is programmed within the default or lower levels by an external resistor (RSD) between the ISD and VSD pins. When the default level is used both terminals must be shorted e.g. by a 0Ω resistor. RSD values and resulting ISD curve Over Current Protection (ISD) [A] min typ max 0.0 38.6 43.6 48.6 0.2 37.5 42.3 47.3 0.39 36.8 41.5 46.3 0.56 36.3 40.9 45.7 1.0 35.4 39.9 44.5 2.2 34.2 38.6 43.0 4.7 33.4 37.6 10.0 32.8 37.0 41.9 41.2 Open 32.3 36.3 40.4 Set up of Over current protection (ISD) 50 Over Current Protection Level (ISD) [Ａ] External Resistance (RSD) [kΩ] 48 46 44 42 min typ max 40 38 36 34 32 30 00 1.0 10 2.0 20 3.0 30 4.0 40 External Resistor Value (ISD-Vss) (RSD) [kΩ] www.onsemi.com 14 5.0 50 STK5F1U3C3D-E Package Dimensions unit : mm HYBRID INTEGRATED MODULE CASE MODAW ISSUE O Missing Pin : 3, 6, 9, 29, 33, 37, 41 4.6 6.0 R 2.3 22 0.75 2.54 ( 68.0) 63.4 DIP 4 76.0 21 × 2.54=53.34 23 44 1 3.2 8.0 45.0 10.8 0.5 0 to 5 49.7 www.onsemi.com 15 STK5F1U3C3D-E ORDERING INFORMATION Device STK5F1U3C3D-E Package Shipping (Qty / Packing) MODAW, 610AC-DIP4-UL (Pb-Free) 6 / Tube ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. 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