STK531U369A-E Inverter IPM for 3-phase Motor Drive www.onsemi.com Overview This “Inverter IPM” is highly integrated device containing all High Voltage (HV) control from HV-DC to 3-phase outputs in a single SIP module (Single-In line Package). Output stage uses IGBT/FRD technology and implements Under Voltage Protection (UVP) and Over Current Protection (OCP) with a Fault Detection output flag. Internal Boost diodes are provided for high side gate boost drive. Function Single control power supply due to Internal bootstrap circuit for high side pre-driver circuit All control input and status output are at low voltage levels directly compatible with microcontrollers Built-in cross conduction prevention Externally accessible embedded thermistor for substrate temperature measurement The level of the over current protection is adjustable with the external resistor, “RSD” Certification UL Recognized (File number : E339285) Specifications Absolute Maximum Ratings at Tc = 25C Parameter Symbol Remarks Supply voltage VCC P to N, surge < 500V Collector-emitter voltage VCE Output current Io Output peak current Ratings Unit 450 V P to U, V, W or U, V, W, to N 600 V P, N, U, V, W terminal current ±10 A P, N, U, V, W terminal current at Tc = 100C ±5 A Iop P, N, U, V, W terminal current, PW = 1ms ±20 A Pre-driver voltage VD1,2,3,4 VB1 to U, VB2 to V, VB3 to W, VDD to VSS 20 V Input signal voltage VIN HIN1, 2, 3, LIN1, 2, 3 0.3 to VDD V FAULT terminal voltage VFAULT FAULT terminal 0.3 to VDD V Maximum power dissipation Pd IGBT per 1 channel 31.2 W Junction temperature Tj IGBT, FRD Storage temperature Tstg Operating case temperature Tc Tightening torque Isolation voltage Vis *1 *2 IPM case temperature 150 C 40 to +125 C 20 to +100 C A screw part *3 0.9 Nm 50Hz sine wave AC 1 minute *4 2000 VRMS Reference voltage is “VSS” terminal voltage unless otherwise specified. *1 : Surge voltage developed by the switching operation due to the wiring inductance between P and N terminal. *2 : VD1=VB1 to U, VD2=VB2 to V, VD3=VB3 to W, VD4=VDD to VSS terminal voltage. *3 : Flatness of the heat-sink should be lower than 0.15mm. *4 : Test conditions : AC2500V, 1 second. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 13 of this data sheet. © Semiconductor Components Industries, LLC, 2015 February 2015 - Rev. 1 1 Publication Order Number : STK531U369A-E/D STK531U369A-E Electrical Characteristics at Tc = 25C, VD1, VD2, VD3, VD4 = 15V Parameter Symbol Conditions Test circuit MIN TYP MAX Unit - - 0.1 mA - - 0.1 mA - 1.9 2.4 - 2.2 2.7 - 1.5 - Power output section Collector-emitter cut-off current ICE VCE = 600V Bootstrap diode reverse current IR(BD) VR(BD) = 600V Collector to emitter saturation voltage VCE(SAT) Fig.1 Upper side Ic = 10A Tj = 25C Lower side *1 Upper side Ic = 5A Tj = 100C Fig.2 Lower side *1 - 1.7 - IF = 10A Tj = 25C Upper side - 1.8 2.1 IF = 5A Tj = 100C Upper side Diode forward voltage VF Junction to case thermal resistance θj-c(T) IGBT θj-c(D) FWD Lower side *1 Fig.3 Lower side *1 - - 2.1 2.4 - 1.4 - V V - 1.6 - - - 4.0 - - 6.0 - 0.08 0.4 - 1.6 4.0 2.5 - - - - 0.8 V 0.5 0.8 - V µA C/W Control (Pre-driver) section Pre-driver current consumption ID High level Input voltage Vin H Low level Input voltage Vin L Input threshold voltage hysteresis *2 VD1, 2, 3 = 15V Fig.4 VD4 = 15V HIN1, HIN2, HIN3, LIN1, LIN2, LIN3 to VSS Vinth(hys) mA V Logic 1 input leakage current IIN+ VIN = +3.3V - 100 143 Logic 0 input leakage current IIN VIN = 0V - - 2 µA FAULT terminal sink current IoSD FAULT : ON / VFAULT = 0.1V - 2 - mA FAULT clear time FLTCLR Fault output latch time 18 - 80 ms VCC and VS undervoltage positive going threshold VCCUV+ VSUV+ 10.5 11.1 11.7 V VCC and VS undervoltage negative going threshold VSUV 10.3 10.9 11.5 V 0.14 0.2 - V VCC and VS undervoltage hysteresis VCCUV VCCUVH VSUVH Over current protection level ISD PW = 100μs, RSD = 0Ω Electric current output signal level ISO Io = 10A Fig.5 18.1 - 22.9 A - 0.31 0.33 0.35 V Reference voltage is “VSS” terminal voltage unless otherwise specified. *1 : The lower side’s VCE(SAT) and VF include a loss by the shunt resistance *2 : Input threshold voltage hysteresis indicates a reference value based on the design value of built-in pre-driver IC Electrical Characteristics at Tc 25C, VD1, VD2, VD3, VD4 = 15V, VCC = 300V, L = 3.9mH Parameter Switching time Symbol tON tOFF Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Conditions Test circuit Io = 10A Io = 5A Fig.6 MIN TYP MAX 0.3 0.5 1.2 - 0.8 1.5 Unit µs - 200 - - 130 - µJ µJ - 330 - µJ - 240 - µJ - 130 - µJ Etot - 370 - µJ Erec - 17 - µJ - 62 - ns - µs Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Diode reverse recovery energy Diode reverse recovery time trr Reverse bias safe operating area RBSOA Io = 20A, VCE = 450V Short circuit safe operating area SCSOA VCE = 400V, Tc = 100C Io = 5A, Tc = 100C IF = 5A, P = 400V, Tc = 100C Full square 4 - Reference voltage is “VSS” terminal voltage unless otherwise specified. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Notes: 1. The pre-drive power supply low voltage protection has approximately 0.2V of hysteresis and operates as follows. Upper side : The gate is turned off and will return to regular operation when recovering to the normal voltage, but the latch will continue till the input signal will turn ‘high’. Lower side : The gate is turned off and will automatically reset when recovering to normal voltage. It does not depend on input signal voltage. 2. The pre-drive low voltage protection is the feature to protect devices when the pre-driver supply voltage falls due to an operating malfunction. www.onsemi.com 2 STK531U369A-E Equivalent Block Diagram VB3(1) W,VS3(2) VB2(5) V,VS2(6) VB1(9) U,VS1(10) P (13) BD BD BD U.V. U.V. U.V. Shunt-Resistor N (16) RCIN(28) Latch time TH(29) Level Shifter Level Shifter Level Shifter HIN1(17) HIN2(18) HIN3(19) Logic Logic Logic LIN1(20) LIN2(21) LIN3(22) FAULT(23) ISO(24) VDD(25) Thermistor Latch Latch time is 18ms to 80ms Over-Current VDD-UnderVoltage VSS(26) ISD(27) www.onsemi.com 3 (Automatic reset) STK531U369A-E Module Pin-Out Description Pin Name Description 1 VB3 High Side Floating Supply Voltage 3 2 W, VS3 Output 3 - High Side Floating Supply Offset Voltage 3 Without Pin 4 Without Pin 5 VB2 High Side Floating Supply voltage 2 6 V,VS2 Output 2 - High Side Floating Supply Offset Voltage 7 Without Pin 8 Without Pin 9 VB1 High Side Floating Supply voltage 1 10 U,VS1 Output 1 - High Side Floating Supply Offset Voltage 11 Without Pin 12 Without Pin 13 P Positive Bus Input Voltage 14 Without Pin 15 Without Pin 16 N Negative Bus Input Voltage 17 HIN1 Logic Input High Side Gate Driver - Phase U 18 HIN2 Logic Input High Side Gate Driver - Phase V 19 HIN3 Logic Input High Side Gate Driver - Phase W 20 LIN1 Logic Input Low Side Gate Driver - Phase U 21 LIN2 Logic Input Low Side Gate Driver - Phase V 22 LIN3 Logic Input Low Side Gate Driver - Phase W 23 FAULT Fault output 24 ISO Current monitor output 25 VDD +15V Main Supply 26 VSS Negative Main Supply 27 ISD Over current detection and setting 28 RCIN Fault clear time setting output 29 TH Thermistor output www.onsemi.com 4 STK531U369A-E Test Circuit (The tested phase : U+ shows the upper side of the U phase and U- shows the lower side of the U phase.) ICE / IR(BD) M N U+ 13 10 M N U(BD) 9 26 V+ 13 6 W+ 13 2 V(BD) 5 26 U10 16 V6 16 W2 16 9 M A ICE VD1=15V 10 5 W(BD) 1 26 VD2=15V 6 VCE 1 VD3=15V 2 25 VD4=15V 26 N Fig.1 VCE(SAT) (Test by pulse) M N m U+ 13 10 17 V+ 13 6 18 W+ 13 2 19 U10 16 20 V6 16 21 9 W2 16 22 M VD1=15V 10 5 VD2=15V 6 V Ic 1 VD3=15V VCE(SAT) 2 25 VD4=15V 5V m 26 27 N Fig.2 VF (Test by pulse) M M N U+ 13 10 V+ 13 6 W+ 13 2 U10 16 V6 16 W2 16 V N Fig.3 ID M N VD1 9 10 VD2 5 6 VD3 1 2 VD4 25 26 Fig.4 www.onsemi.com 5 VF IF STK531U369A-E ■ ISD 9 Input signal (0 to 5V) 10 VD1=15V 10 5 VD2=15V 6 Io 1 VD3=15V 2 25 Io VD4=15V ISD Input signal 20 26 27 100μs 16 Fig.5 Switching time (The circuit is a representative example of the lower side U phase.) 9 Input signal (0 to 5V) 13 VD1=15V 10 5 VD2=15V 6 90% Io 10 1 VCC CS VD3=15V 2 25 10% tON VD4=15V tOFF Input signal Io 20 26 27 16 Fig.6 www.onsemi.com 6 STK531U369A-E Input / Output Timing Chart VBS under voltage protection reset signal ON HIN1,2,3 OFF LIN1,2,3 *2 VDD VDD under voltage protection reset signal *3 VB1,2,3 VBS under voltage protection reset signal *4 -------------------------------------------------------ISD operation current level------------------------------------------------------- N terminal (BUS line) current FAULT terminal voltage (at pulled-up) ON *1 Upper U, V, W OFF *1 Lower U ,V, W Utmatically reset after protection (18ms to 80ms) Fig. 7 Notes *1 : Diagram shows the prevention of shoot-through via control logic. More dead time to account for switching delay needs to be added externally. *2 : When VDD decreases all gate output signals will go low and cut off all of 6 IGBT outputs. When VDD rises the operation will resume immediately. *3 : When the upper side gate voltage at VB1, VB2 and VB3 drops only, the corresponding upper side output is turned off. The outputs return to normal operation immediately after the upper side gate voltage rises. *4 : In case of over current detection, all IGBT’s are turned off and the FAULT output is asserted. Normal operation resumes in 18 to 80ms after the over current condition is removed. www.onsemi.com 7 STK531U369A-E Logic level table P(13) INPUT Upper IGBT HIN1,2,3 (17,18,19) IC Driver LIN1,2,3 (20,21,22) U,V,W (10,6,2) Lower IGBT OUTPUT HIN LIN OCP Upper IGBT Lower IGBT U,V,W FAULT H L OFF ON OFF P OFF L H OFF OFF ON N OFF L L OFF OFF OFF High Impedance OFF H H OFF OFF OFF High Impedance OFF X X ON OFF OFF High Impedance ON N(16) Fig. 8 Sample Application Circuit STK531U369A-E VB1 : 9 P : 13 U,VS1 : 10 VCC CB VD1 CB VD2 CB VD3 CS1 CS2 VB2 : 5 V,VS2 : 6 N : 16 VB3 : 1 W,VS3 : 2 RCIN : 28 U,VS1 : 10 HIN1 : 17 HIN2 : 18 HIN3 : 19 Control Circuit (5V) LIN1 : 20 LIN2 : 21 LIN3 : 22 V,VS2 : 6 ISO : 24 FAULT : 23 TH : 29 VDD : 25 CD VSS : 26 W,VS3 : 2 RP RP VD=15V ISD : 27 RSD Fig.9 www.onsemi.com 8 STK531U369A-E Recommended Operating Condition Item Supply voltage Pre-driver supply voltage PWM frequency Symbol VCC Conditions MIN TYP MAX Unit 0 280 450 V P to N VD1,2,3 VB1 to U, VB2 to V, VB3 to W VD4 VDD to VSS *1 12.5 15 17.5 13.5 15 16.5 1 - 20 kHz fPWM V Dead time DT Turn-off to Turn-on 2 - - μs Allowable input pulse width PWIN ON and OFF 1 - - μs 0.6 - 0.9 Nm Tightening torque ‘M3’ type screw *1 : Pre-drive power supply (VD4=15±1.5V) must have the capacity of Io=20mA (DC), 0.5A (Peak). Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. Usage Precaution 1. This IPM includes bootstrap diode and resistors. Therefore, by adding a capacitor “CB”, a high side drive voltage is generated; each phase requires an individual bootstrap capacitor. The recommended value of CB is in the range of 1 to 47μF, however this value needs to be verified prior to production. If selecting the capacitance more than 47μF (±20%), connect a resistor (about 20Ω) in series between each 3-phase upper side power supply terminals (VB1, 2, 3) and each bootstrap capacitor. When not using the bootstrap circuit, each upper side pre-drive power supply requires an external independent power supply. 2. It is essential that wirning length between terminals in the snubber circuit be kept as short as possible to reduce the effect of surge voltages. Recommended value of “CS” is in the range of 0.1 to 10μF. 3. “ISO” (pin24) is terminal for current monitor. High current may flow into that course when short-circuiting the “ISO” terminal and “VSS” terminal. Please do not connect them. 4. “FAULT” (pin23) is open DRAIN output terminal (Active Low). Pull up resistor is recommended more than 6.8kΩ. 5. Inside the IPM, a thermistor used as the temperature monitor for internal subatrate is connected between VSS terminal and TH terminal therefore, an external pull up resistor connected between the TH terminal and an external power supply should be used. The temperature monitor example application is as follows, please refer the Fig.10, and Fig.11 below. 6. Pull down resistor of 33kΩ is provided internally at the signal input terminals. An external resistor of 2.2k to 3.3kΩ should be added to reduce the influence of external wiring noise. 7. The over current protection feature is not intended to protect in exceptional fault condition. An external fuse is recommended for safety. 8. The level of the over current protection might be changed from IPM design value when “ISD” terminal and “VSS” terminal are shorted at external. Be confirm with actual application(“N” terminal and “VSS” terminal are shorted at internal). 9. The level of the over current protection is adjustable with the external resistor “RSD” between “ISD” terminal and “VSS” terminal. 10. When input pulse width is less than 1.0μs, an output may not react to the pulse. (Both ON signal and OFF signal) This data shows the example of the application circuit, does not guarantee a design as the mass production set. www.onsemi.com 9 STK531U369A-E The characteristic of thermistor Parameter Resistance B-Constant (25 to 50 C) Temperature Range Symbol R25 R100 B Condition MIN 99 5.18 4208 Tc = 25C Tc = 100C TYP 100 5.38 4250 - 40 MAX 101 5.60 4293 +125 Unit kΩ kΩ K C Case Temperature(Tc) - Thermal resistance(RTH) 10000 Thermistor Resistanse, RTH-Kohm min typ 1000 max 100 10 1 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Case temperature, Tc-degC Fig.10 Variation of thermistor resistance with temperature Case Temperature(Tc) - TH to Vss voltage characteristic 6.00 min TH - Vss terminal voltage, VTH-V 5.00 typ max 4.00 3.00 2.00 1.00 0.00 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Case temperature, Tc-degC Fig.11 Variation of thermistor terminal voltage with temperature (39k pull-up resistor, 5V) www.onsemi.com 10 STK531U369A-E CB capacitor value calculation for bootstrap circuit Calculate conditions Parameter Symbol Value Upper side power supply. VBS 15 V Total gate charge of output power IGBT at 15V. QG 89 nC Upper limit power supply low voltage protection. UVLO 12 V IDmax 400 μA TONmax - s Upper side power dissipation. ON time required for CB voltage to fall from 15V to UVLO Unit Capacitance calculation formula Thus, the following formula are true VBS CB QG IDMAX TONMAX = UVLO CB therefore, CB = (QG + IDMAX TONMAX) / (VBS UVLO) The relationship between TONMAX and CB becomes as follows. CB is recommended to be approximately 3 times the value calculated above. The recommended value of CB is in the range of 1 to 47μF, however, this value needs to be verified prior to production. CB vs Tonmax Bootstrap Capacitance CB [uF] 100 10 1 0.1 0.01 0.1 1 10 Tonmax [ms] Fig. 12 Tonmax - CB characteristic www.onsemi.com 11 100 1000 STK531U369A-E Package Dimensions unit : mm The tolerances of length are +/ 0.5mm unless otherwise specified. SIP29 44x26.5 CASE 127CH ISSUE O 44.0 41.0 2 R 1.8 29.0 ( 15.75) S IP 05 Full ( 24.0) 26.5 3.6 missing pin : 3, 4, 7, 8, 11, 12, 14, 15 0.6 1.27 3.2 0.50 1.27=35.56 5.5 28 5.0 29 1 ( 35.0) www.onsemi.com 12 6.20 STK531U369A-E ORDERING INFORMATION Device STK531U369A-E Package Shipping (Qty / Packing) SIP29 44x26.5 (Pb-Free) 11 / Tube ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein. 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