NCV8154 Dual 300 mA, Low IQ, Low Dropout, Dual Input Voltage Regulator The NCV8154 is 300 mA, Dual Output Linear Voltage Regulator that offers two independent input pins and provides a very stable and accurate voltage with ultra low noise and very high Power Supply Rejection Ratio (PSRR) suitable for RF applications. The NCV8154 is suitable for powering RF blocks of automotive infotainment systems and other power sensitive device. Due to low power consumption the NCV8154 offers high efficiency and low thermal dissipation. www.onsemi.com DFN10, 3x3 CASE 485C WDFN6, 1.5x1.5 CASE 511BJ Features • Operating Input Voltage Range: 1.9 V to 5.25 V • Two Independent Input Voltage Pins • Two Independent Output Voltage (for detail please refer to Ordering • • • • • • • • • PIN CONNECTIONS Information) Low IQ of typ. 55 mA per Channel High PSRR: 75 dB at 1 kHz Very Low Dropout: 140 mV Typical at 300 mA Thermal Shutdown and Current Limit Protections Stable with a 1 mF Ceramic Output Capacitor Available in DFN10 3x3mm and WDFN6 1.5x1.5mm Packages Active Output Discharge for Fast Output Turn-Off NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable; Device Temperature Grade 1: −40°C to +125°C Ambient Operating Temperature Range These are Pb-free Devices GND 1 10 EN1 OUT1 2 9 IN1 OUT2 3 GND 4 7 EN2 N/C 5 6 N/C DFN10 (Top View) EN1 1 6 OUT1 IN 2 5 OUT2 EN2 3 4 GND WDFN6 (Top View) Typical Applications • Applications Requiring Wettable Flanks for Enhanced Visual • • MARKING DIAGRAMS Inspection Wireless LAN, Bluetooth®, ZigBee® Interfaces Automotive Infotainment Systems NCV8154x VVVVV ALYWG G NCV8154 VIN1 VOUT1 IN1 VIN2 OUT1 IN2 VOUT2 OUT2 EN1 CIN1 1 mF CIN2 1 mF EN2 GND COUT2 1 mF COUT1 1 mF Figure 1. Typical Application Schematic 8 IN2 EP 1 X MG G x = NCV8154N − Non wettable flank = NCV8154W − Wettable flank VVVVV = Voltage Option A = Assembly Location L = Wafer Lot Y = Year W = Work Week X = Specific Device Code M = Month Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering, marking and shipping information on page 16 of this data sheet. © Semiconductor Components Industries, LLC, 2016 June, 2016 − Rev. 6 1 Publication Order Number: NCV8154/D NCV8154 IN1* ENABLE LOGIC EN1 THERMAL SHUTDOWN BANDGAP REFERENCE MOSFET DRIVER WITH CURRENT LIMIT OUT1 ACTIVE DISCHARGE EN1 GND IN2* ENABLE LOGIC EN2 THERMAL SHUTDOWN BANDGAP REFERENCE MOSFET DRIVER WITH CURRENT LIMIT OUT2 ACTIVE DISCHARGE EN2 GND *Dual IN available only for DFN10 Figure 2. Simplified Schematic Block Diagram Table 1. PIN FUNCTION DESCRIPTION − DFN10 Pin No. Pin Name Description 1 GND Power supply ground. Soldered to the copper plane allows for effective heat dissipation. 2 OUT1 Regulated output voltage of the first channel. A small 1 mF ceramic capacitor is needed from this pin to ground to assure stability. 3 OUT2 Regulated output voltage of the second channel. A small 1 mF ceramic capacitor is needed from this pin to ground to assure stability. 4 GND Power supply ground. Soldered to the copper plane allows for effective heat dissipation. 5,6 N/C Not connected, can be tied to ground plane to improve thermal dissipation. 7 EN2 Driving EN2 over 0.9 V turns-on OUT2. Driving EN below 0.4 V turns-off the OUT2 and activates the active discharge. 8 IN2 Inputs pin for second channel. It is recommended to connect 1 mF ceramic capacitor close to the device pin. 9 IN1 Inputs pin for first channel. It is recommended to connect 1 mF ceramic capacitor close to the device pin. 10 EN1 Driving EN1 over 0.9 V turns-on OUT1. Driving EN below 0.4 V turns-off the OUT1 and activates the active discharge. − EXP Exposed pad must be tied to ground. Soldered to the copper plane allows for effective thermal dissipation. www.onsemi.com 2 NCV8154 Table 2. PIN FUNCTION DESCRIPTION − WDFN6 Pin No. Pin Name 1 EN1 2 IN Description Driving EN1 over 0.9 V turns-on OUT1. Driving EN below 0.4 V turns-off the OUT1. Inputs pin. It is recommended to connect at least 1 mF ceramic capacitor close to the device pin. 3 EN2 Driving EN2 over 0.9 V turns-on OUT2. Driving EN below 0.4 V turns-off the OUT2. 4 GND Power supply ground. Soldered to the copper plane allows for effective heat dissipation. 5 OUT2 Regulated output voltage of the second channel. A small 1 mF ceramic capacitor is needed from this pin to ground to assure stability. 6 OUT1 Regulated output voltage of the first channel. A small 1 mF ceramic capacitor is needed from this pin to ground to assure stability. Table 3. ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit VIN1, VIN2 −0.3 V to 6 V V Output Voltage VOUT1, VOUT2 −0.3 V to VIN + 0.3 V or 6 V V Enable Inputs VEN1, VEN2 −0.3 V to VIN + 0.3 V or 6 V V Input Voltage (Note 1) Output Short Circuit Duration tSC Indefinite s Operating Ambient Temperature Range TA −40 to +125 °C TJ(MAX) 150 °C Maximum Junction Temperature TSTG −55 to 150 °C ESD Capability, Human Body Model (Note 2) ESDHBM 2,000 V ESD Capability, Machine Model (Note 2) ESDMM 200 V Storage Temperature Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114) ESD Machine Model tested per AEC−Q100−003 (EIA/JESD22−A115) Latchup Current Maximum Rating tested per JEDEC standard: JESD78. Table 4. THERMAL CHARACTERISTICS (Note 3) Rating Symbol Value Thermal Characteristics, DFN10 3 × 3 mm, Thermal Resistance, Junction-to-Air qJA 109 Thermal Characteristics, WDFN6 1.5 × 1.5 mm, Thermal Resistance, Junction-to-Air qJA 207 Unit °C/W °C/W 3. Single component mounted on 1 oz, FR4 PCB with 645 mm2 Cu area. RECOMMENDED OPERATING CONDITIONS Parameter Symbol Min Max Unit Input Voltage VIN 1.9 5.25 V Junction Temperature TJ −40 125 °C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 3 NCV8154 Table 5. ELECTRICAL CHARACTERISTICS (−40°C ≤ TJ ≤ 125°C; VIN = VOUT(NOM) + 1 V or 2.5 V, whichever is greater; VEN = 0.9 V, IOUT = 1 mA, CIN = COUT = 1 mF. Typical values are at TJ = +25°C. Min/Max values are specified for TJ = −40°C and TJ = 125°C respectively.) (Note 4) Test Conditions Parameter Operating Input Voltage VOUT > 2 V Output Voltage Accuracy −40°C ≤ TJ ≤ 125°C Line Regulation VOUT + 0.5 V ≤ VIN ≤ 5 V Load Regulation IOUT = 1 mA to 300 mA Symbol Min VIN VOUT VOUT ≤ 2 V Max Unit 1.9 5.25 V −3 +3 % −60 RegLINE DFN10 WDFN6 RegLOAD VOUT(nom) = 1.8 V VOUT(nom) = 2.8 V Typ VDO +60 mV 0.02 0.2 %/V 15 40 25 45 335 430 160 290 140 270 Dropout Voltage (Note 5) IOUT = 300 mA Output Current Limit VOUT = 90% VOUT(nom) ICL 400 IOUT = 0 mA, EN1 = VIN, EN2 = 0 V or EN2 = VIN, EN1 = 0 V IQ 55 100 IOUT1 = IOUT2 = 0 mA, VEN1 = VEN2 = VIN IQ 110 200 IDIS 0.1 1 VOUT(nom) = 3.3 V Quiescent Current mV mV mA mA Shutdown current (Note 6) VEN ≤ 0.4 V, VIN = 5.25 V EN Pin Threshold Voltage High Threshold Low Threshold VEN Voltage increasing VEN Voltage decreasing EN Pin Input Current VEN = VIN = 5.25 V Power Supply Rejection Ratio VIN = VOUT + 1 V for VOUT > 2 V, VIN = 2.5 V, for VOUT ≤ 2 V, IOUT = 10 mA Output Noise Voltage f = 10 Hz to 100 kHz Active Discharge Resistance VIN = 4 V, VEN < 0.4 V RDIS 50 W Thermal Shutdown Temperature Temperature increasing from TJ = +25°C TSD 160 °C Thermal Shutdown Hysteresis Temperature falling from TSD TSDH mA V VEN_HI VEN_LO f = 1 kHz 0.9 0.4 0.3 PSRR 75 dB VN 75 mVrms − 20 1.0 mA IEN − °C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 5. Characterized when VOUT falls 100 mV below the regulated voltage at VIN = VOUT(NOM) + 1 V. 6. Shutdown Current is the current flowing into the IN pin when the device is in the disable state. www.onsemi.com 4 NCV8154 3.35 3.34 1.83 1.82 1.81 IOUT = 1 mA 1.80 IOUT = 300 mA 1.79 1.78 1.77 1.76 1.75 −40 IGND, GROUND CURRENT (mA) VIN = 2.8 V VOUT = 1.8 V CIN = COUT = 1 mF −20 0 20 40 60 80 100 VOUT, OUTPUT VOLTAGE (V) 1.85 1.84 3.33 3.32 3.29 3.28 3.26 3.25 −40 120 140 −20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 3. Output Voltage vs. Temperature VOUT = 1.8 V Figure 4. Output Voltage vs. Temperature VOUT = 3.3 V 60 54 TJ = 125°C 480 TJ = 25°C 420 TJ = −40°C 360 300 240 180 120 VIN = 4.3 V VOUT = 3.3 V CIN = COUT = 1 mF 60 0 60 120 180 240 TJ = 125°C 48 TJ = −40°C 52 TJ = 25°C 36 30 24 18 12 VIN = 4.3 V VOUT = 3.3 V CIN = COUT = 1 mF 6 0 0 300 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 IOUT, OUTPUT CURRENT (mA) VIN, INPUT VOLTAGE (V) Figure 5. Ground Current vs. Output Current Figure 6. Quiescent Current vs. Input Voltage 5.5 0.1 LINEREG, LINE REGULATION (%/V) 60 IQ, QUIESCENT CURRENT (mA) VIN = 4.3 V VOUT = 3.3 V CIN = COUT = 1 mF 3.27 540 58 56 54 52 50 0.08 0.06 0.04 0.02 0 −0.02 48 −0.04 46 44 −0.06 VIN = 4.3 V VOUT = 3.3 V CIN = COUT = 1 mF 42 40 −40 IOUT = 300 mA 3.30 600 0 IOUT = 1 mA 3.31 IQ, QUIESCENT CURRENT (mA) VOUT, OUTPUT VOLTAGE (V) TYPICAL CHARACTERISTICS −20 0 20 40 60 80 100 120 140 VIN = 2.8 V VOUT = 1.8 V CIN = COUT = 1 mF 0.08 −0.1 −40 −20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Quiescent Current vs. Temperature Figure 8. Line Regulation vs. Temperature VOUT = 1.8 V www.onsemi.com 5 NCV8154 TYPICAL CHARACTERISTICS 30 REGLOAD, LOAD REGULATION (mV) LINEREG, LINE REGULATION (%/V) 0.1 0.08 0.06 0.04 0.02 0 −0.02 −0.04 −0.06 VIN = 4.3 V VOUT = 3.3 V CIN = COUT = 1 mF −0.08 −0.1 −40 −20 0 20 40 60 80 100 21 18 15 12 9 6 VIN = 3.3 V VOUT = 2.8 V CIN = COUT = 1 mF 3 −20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 9. Line Regulation vs. Temperature VOUT = 3.3 V Figure 10. Load Regulation vs. Temperature VOUT = 2.8 V 225 VDROP, DROPOUT VOLTAGE (mV) 27 24 21 18 15 12 9 6 VIN = 4.3 V VOUT = 3.3 V CIN = COUT = 1 mF 3 −20 0 20 40 60 80 100 200 175 150 TJ = 125°C 125 100 50 25 0 120 140 TJ = −40°C 75 TJ = 25°C 0 30 60 80 120 150 VIN = 4.3 V VOUT = 3.3 V CIN = COUT = 1 mF 180 210 240 270 300 TJ, JUNCTION TEMPERATURE (°C) IOUT, OUTPUT CURRENT (mA) Figure 11. Load Regulation vs. Temperature VOUT = 3.3 V Figure 12. Dropout Voltage vs. Output Current 225 VDROP, DROPOUT VOLTAGE (mV) REGLOAD, LOAD REGULATION (mV) 24 0 −40 120 140 30 0 −40 27 200 IOUT = 300 mA 175 150 125 100 IOUT = 150 mA 75 50 IOUT = 0 mA 25 0 −40 −20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) Figure 13. Dropout Voltage vs. Temperature www.onsemi.com 6 NCV8154 TYPICAL CHARACTERISTICS 600 ISC, SHORT−CIRCUIT CURRENT (mA) 600 550 525 VIN = 3.8 V 500 475 450 VIN = 5.25 V 425 400 VOUT = 90% VOUT(NOM) CIN = COUT = 1 mF 375 0 20 40 60 80 100 575 550 525 475 VIN = 5.25 V 450 425 400 350 −40 120 140 VOUT = 0 V CIN = COUT = 1 mF 375 −20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 14. Current Limit vs. Temperature Figure 15. Short−Circuit Current vs. Temperature 100 520 90 510 500 490 480 470 460 450 VOUT = 0 V CIN = COUT = 1 mF 440 2.8 3.1 3.4 3.7 4.0 4.3 4.6 4.9 5.2 5.5 80 70 120 140 VIN = 4.3 V VOUT = 0 V VEN = 0 V CIN = COUT = 1 mF 60 50 40 30 20 10 0 −40 −20 0 20 40 60 80 100 120 140 VIN, INPUT VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 16. Short−Circuit Current vs. Input Voltage Figure 17. Disable Current vs. Temperature 1.0 500 0.9 450 0.8 OFF −> ON 0.7 ON −> OFF 0.6 0.5 0.4 0.3 VIN = 4.3 V VOUT = 0 V CIN = COUT = 1 mF 0.2 0.1 0 −40 VIN = 3.8 V 500 530 430 2.5 VEN, ENABLE VOLTAGE (V) −20 IDIS, DISABLE CURRENT (nA) ISC, SHORT−CIRCUIT CURRENT (mA) 350 −40 −20 0 20 40 60 80 100 IEN, ENABLE CURRENT (nA) ICL, CURRENT LIMIT (mA) 575 400 350 300 250 200 150 VIN = 4.3 V VOUT = 3.3 V CIN = COUT = 1 mF 100 50 0 −40 120 140 −20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 18. Enable Thresholds vs. Temperature Figure 19. Current to Enable Pin vs. Temperature www.onsemi.com 7 120 140 NCV8154 TYPICAL CHARACTERISTICS 100 90 80 70 60 50 40 30 20 VIN = 4.3 V VOUT = 1.8 V CIN = COUT = 1 mF 10 0 −40 −20 0 20 40 60 80 100 VIN = 2.8 V + 100 mVPP VOUT = 1.8 V CIN = none COUT = 1 mF, MLCC 90 80 70 60 50 40 1 mA 10 mA 100 mA 150 mA 300 mA 30 20 10 0 0.1 120 140 1 10 100 1k TJ, JUNCTION TEMPERATURE (°C) FREQUENCY (kHz) Figure 20. Discharge Resistivity vs. Temperature Figure 21. Power Supply Rejection Ratio, VOUT = 1.8 V 100 100 VIN = 4.3 V + 100 mVPP VOUT = 3.3 V CIN = none COUT = 1 mF, MLCC 90 80 70 VOUT = 1.8 V VOUT = 3.3 V 10 60 50 40 1 1 mA 10 mA 100 mA 150 mA 300 mA 30 20 10 0 0.1 VIN = VOUT = 1 V CIN = COUT = 1 mF, MLCC, size 1206 1 10 100 1k 0.1 0 10k 60 120 180 240 300 FREQUENCY (kHz) IOUT, OUTPUT CURRENT (mA) Figure 22. Power Supply Rejection Ratio, VOUT = 3.3 V Figure 23. Output Capacitor ESR vs. Output Current 10 OUTPUT VOLTAGE NOISE (mV/rtHz) 10k ESR (W) RR, RIPPLE REJECTION (dB) RR, RIPPLE REJECTION (dB) RDIS, DISCHARGE RESISTIVITY (W) 100 1 mA 10 mA 150 mA 300 mA 1 IOUT 0.1 0.01 VIN = 2.8 V VOUT = 1.8 V CIN = COUT = 1 mF 0.001 0.01 0.1 1 10 100 RMS Output Noise (mV) 10 Hz − 100 kHz 100 Hz − 100 kHz 1 mA 77.84 77.28 10 mA 71.71 70.48 150 mA 71.95 70.88 300 mA 72.71 71.67 1000 FREQUENCY (kHz) Figure 24. Output Voltage Noise Spectral Density for VOUT = 2.8 V, COUT = 1 mF www.onsemi.com 8 NCV8154 TYPICAL CHARACTERISTICS 1 mA 10 mA 150 mA 300 mA 1 RMS Output Noise (mV) IOUT 10 Hz − 100 kHz 100 Hz − 100 kHz 1 mA 119.7 117.87 10 mA 113.47 111.47 150 mA 113.84 112.05 300 mA 115.95 114.03 0.1 0.01 VIN = 4.3 V VOUT = 3.3 V CIN = COUT = 1 mF 0.001 0.01 0.1 1 10 100 1000 FREQUENCY (kHz) 500 mV/div 500 mV/div 200 mA/div VEN IIN VOUT VIN = 2.8 V VOUT = 1.8 V IOUT = 10 mA COUT = COUT = 1 mF VEN IIN VOUT VIN = 2.8 V VOUT = 1.8 V IOUT = 10 mA COUT = COUT = 4.7 mF 40 ms/div Figure 27. Enable Turn−on Response − VOUT = 1.8 V, COUT = 4.7 mF IIN VIN = 3.8 V VOUT = 3.3 V IOUT = 10 mA COUT = COUT = 1 mF VOUT VEN 50 mA/div 200 mA/div VEN 500 mV/div 40 ms/div Figure 26. Enable Turn−on Response − VOUT = 1.8 V, COUT = 1 mF 1 V/div 1 V/div 100 mA/div 500 mV/div 500 mV/div 100 mA/div 500 mV/div Figure 25. Output Voltage Noise Spectral Density for VOUT = 3.3 V, COUT = 1 mF 50 mA/div OUTPUT VOLTAGE NOISE (mV/rtHz) 10 IIN VOUT VIN = 4.3 V VOUT = 3.3 V IOUT = 10 mA COUT = COUT = 4.7 mF 40 ms/div 40 ms/div Figure 28. Enable Turn−on Response − VOUT = 3.3 V, COUT = 1 mF Figure 29. Enable Turn−on Response − VOUT = 3.3 V, COUT = 4.7 mF www.onsemi.com 9 NCV8154 500 mV/div tRISE = 1 ms VIN tFALL = 1 ms 20 mV/div VIN VOUT VIN = 3.8 V to 4.8 V IOUT = 10 mA CIN = none COUT = 1 mF VOUT VIN = 4.8 V to 3.8 V IOUT = 10 mA CIN = none COUT = 1 mF 8 ms/div Figure 31. Line Transient Response − Falling Edge, VOUT = 3.3 V, IOUT = 10 mA tRISE = 1 ms VIN = 3.8 V to 4.8 V IOUT = 300 mA CIN = none COUT = 1 mF 20 mV/div VIN 500 mV/div 8 ms/div Figure 30. Line Transient Response − Rising Edge, VOUT = 3.3 V, IOUT = 10 mA VOUT VIN = 4.8 V to 3.8 V IOUT = 300 mA CIN = none COUT = 1 mF VIN tFALL = 1 ms VOUT 4 ms/div Figure 33. Line Transient Response − Falling Edge, VOUT = 3.3 V, IOUT = 300 mA VIN 500 mV/div 4 ms/div Figure 32. Line Transient Response − Rising Edge, VOUT = 3.3 V, IOUT = 300 mA tRISE = 1 ms 20 mV/div 20 mV/div 500 mV/div 20 mV/div 500 mV/div 20 mV/div 500 mV/div TYPICAL CHARACTERISTICS VOUT VIN = 3.8 V to 4.8 V IOUT = 10 mA CIN = none COUT = 4.7 mF VIN = 4.8 V to 3.8 V IOUT = 10 mA CIN = none COUT = 4.7 mF VIN tFALL = 1 ms VOUT 4 ms/div 4 ms/div Figure 34. Line Transient Response − Rising Edge, VOUT = 3.3 V, IOUT = 10 mA, COUT = 4.7 mF Figure 35. Line Transient Response − Falling Edge, VOUT = 3.3 V, IOUT = 10 mA, COUT = 4.7 mF www.onsemi.com 10 NCV8154 IOUT1 VOUT1 100 mA/div VIN = VOUT + 1 V VOUT1 = 3.3 V tRISE = 1 ms V OUT2 = 1.8 V IOUT2 = 10 mA COUT1 = 1 mF COUT2 = 1 mF 50 mV/div 50 mV/div 50 mV/div 50 mV/div 100 mA/div TYPICAL CHARACTERISTICS VOUT2 IOUT1 tFALL = 1 ms VOUT1 VIN = VOUT + 1 V VOUT1 = 3.3 V VOUT2 = 1.8 V IOUT2 = 10 mA COUT1 = 1 mF COUT2 = 1 mF VOUT2 4 ms/div 100 ms/div Figure 36. Load Transient Response − 1.8 V − Rising Edge, IOUT1 = 100 mA to 300 mA Figure 37. Load Transient Response − 1.8 V − Falling Edge, IOUT1 = 300 mA to 100 mA tRISE = 500 ns VOUT1 50 mV/div 50 mV/div 100 mA/div IOUT1 VIN = VOUT + 1 V VOUT1 = 3.3 V VOUT2 = 1.8 V IOUT2 = 10 mA COUT1 = 1 mF COUT2 = 1 mF VOUT2 tFALL = 500 ns VIN = VOUT + 1 V VOUT1 = 3.3 V VOUT2 = 1.8 V IOUT2 = 10 mA COUT1 = 1 mF COUT2 = 1 mF VOUT1 VOUT2 10 ms/div Figure 39. Load Transient Response − 1.8 V − Falling Edge, IOUT1 = 300 mA to 1 mA IOUT1 VOUT1 100 mA/div 4 ms/div Figure 38. Load Transient Response − 1.8 V − Rising Edge, IOUT1 = 1 mA to 300 mA VIN = VOUT + 1 V VOUT1 = 3.3 V tRISE = 500 ns V OUT2 = 1.8 V IOUT2 = 10 mA COUT1 = 1 mF COUT2 = 1 mF 50 mV/div 50 mV/div 50 mV/div 50 mV/div 100 mA/div 50 mV/div 50 mV/div 100 mA/div IOUT1 VOUT2 IOUT1 tFALL = 500 ns VOUT1 VIN = VOUT + 1 V VOUT1 = 3.3 V VOUT2 = 1.8 V IOUT2 = 10 mA COUT1 = 1 mF COUT2 = 1 mF VOUT2 4 ms/div 4 ms/div Figure 40. Load Transient Response − 1.8 V − Rising Edge, IOUT = 50 mA to 300 mA Figure 41. Load Transient Response − Falling Edge, IOUT = 300 mA to 50 mA www.onsemi.com 11 NCV8154 VOUT1 100 mA/div 50 mV/div 50 mV/div IOUT1 VIN = VOUT + 1 V VOUT1 = 3.3 V tRISE = 500 ns VOUT2 = 1.8 V IOUT2 = 10 mA COUT1 = 1 mF COUT2 = 1 mF VOUT2 IOUT1 tFALL = 500 ns VOUT1 VIN = VOUT + 1 V VOUT1 = 3.3 V VOUT2 = 1.8 V IOUT2 = 10 mA COUT1 = 1 mF COUT2 = 1 mF VOUT2 100 ms/div Figure 43. Load Transient Response − 3.3 V − Falling Edge, IOUT1 = 300 mA to 100 mA tRISE = 500 ns VOUT1 VIN = VOUT + 1 V VOUT1 = 3.3 V VOUT2 = 1.8 V IOUT2 = 10 mA COUT1 = 1 mF COUT2 = 1 mF 50 mV/div 50 mV/div IOUT1 100 mA/div 4 ms/div Figure 42. Load Transient Response − 3.3 V − Rising Edge, IOUT1 = 100 mA to 300 mA VOUT2 IOUT1 tFALL = 500 ns VIN = VOUT + 1 V VOUT1 = 3.3 V VOUT2 = 1.8 V IOUT2 = 10 mA COUT1 = 1 mF COUT2 = 1 mF VOUT1 VOUT2 10 ms/div Figure 45. Load Transient Response − 3.3 V − Falling Edge, IOUT1 = 300 mA to 1 mA IOUT1 tRISE = 500 ns VOUT1 100 mA/div 4 ms/div Figure 44. Load Transient Response − 3.3 V − Rising Edge, IOUT1 = 1 mA to 300 mA VIN = VOUT + 1 V VOUT1 = 3.3 V VOUT2 = 1.8 V IOUT2 = 10 mA COUT1 = 1 mF COUT2 = 1 mF 50 mV/div 50 mV/div 50 mV/div 50 mV/div 100 mA/div 50 mV/div 50 mV/div 100 mA/div 50 mV/div 50 mV/div 100 mA/div TYPICAL CHARACTERISTICS VOUT2 IOUT1 tFALL = 500 ns VOUT1 VOUT2 VIN = VOUT + 1 V VOUT1 = 3.3 V VOUT2 = 1.8 V IOUT2 = 10 mA COUT1 = 1 mF COUT2 = 1 mF 4 ms/div 4 ms/div Figure 46. Load Transient Response − 3.3 V − Rising Edge, IOUT = 50 mA to 300 mA Figure 47. Load Transient Response − Falling Edge, IOUT = 300 mA to 50 mA www.onsemi.com 12 NCV8154 VOUT COUT = 4.7 mF 500 mV/div 1 V/div VIN = 2.8 V VOUT = 1.8 V IOUT = 0 mA COUT = 1 mF, 4.7 mF VEN COUT = 1 mF VIN = 4.3 V VOUT = 3.3 V IOUT = 0 mA COUT = 1 mF, 4.7 mF VEN COUT = 4.7 mF VOUT COUT = 1 mF 200 ms/div 200 ms/div Figure 48. Enable Turn−off, VOUT = 1.8 V Figure 49. Enable Turn−off, VOUT = 3.3 V VIN VOUT1 VIN = 4.3 V VOUT1 = 3.3 V IOUT1 = 10 mA IOUT2 = 10 mA CIN = COUT1 = COUT2 = 1 mF 50 mA/div 1 V/div 500 mV/div TYPICAL CHARACTERISTICS 1 V/div 1 V/div VOUT2 Short−Circuit Current Overheating VIN = 5.25 V VOUT = 3.3 V CIN = COUT = 1 mF IOUT VOUT Thermal Shutdown TSD Cycling Short−Circuit Event 20 ms/div 10 ms/div Figure 50. Turn−on/off − Slow Rising VIN Figure 51. Short−Circuit and Thermal Shutdown www.onsemi.com 13 NCV8154 General If the EN pin voltage >0.9 V the device is guaranteed to be enabled. The NCV8154 regulates the output voltage and the active discharge transistor is turned−off. The both EN pin has internal pull−down current source with typ. value of 300 nA which assures that the device is turned−off when the EN pin is not connected. In the case where the EN function isn’t required the EN should be tied directly to IN. The NCV8154 is a dual output high performance 300 mA Low Dropout Linear Regulator. This device delivers very high PSRR (75 dB at 1 kHz) and excellent dynamic performance as load/line transients. In connection with low quiescent current this device is very suitable for various battery powered applications such as tablets, cellular phones, wireless and many others. Each output is fully protected in case of output overload, output short circuit condition and overheating, assuring a very robust design. The NCV8154 device is housed in DFN10 3 x3 mm package which is useful for space constrains application. Output Current Limit Output Current is internally limited within the IC to a typical 400 mA. The NCV8154 will source this amount of current measured with a voltage drops on the 90% of the nominal VOUT. If the Output Voltage is directly shorted to ground (VOUT = 0 V), the short circuit protection will limit the output current to 520 mA (typ). The current limit and short circuit protection will work properly over whole temperature range and also input voltage range. There is no limitation for the short circuit duration. This protection works separately for each channel. Short circuit on the one channel do not influence second channel which will work according to specification. Input Capacitor Selection (CIN) It is recommended to connect at least a 1 mF Ceramic X5R or X7R capacitor as close as possible to the IN pin of the device. This capacitor will provide a low impedance path for unwanted AC signals or noise modulated onto constant input voltage. There is no requirement for the min. or max. ESR of the input capacitor but it is recommended to use ceramic capacitors for their low ESR and ESL. A good input capacitor will limit the influence of input trace inductance and source resistance during sudden load current changes. Larger input capacitor may be necessary if fast and large load transients are encountered in the application. Thermal Shutdown When the die temperature exceeds the Thermal Shutdown threshold (TSD − 160°C typical), Thermal Shutdown event is detected and the affected channel is turn−off. Second channel still working. The channel which is overheated will remain in this state until the die temperature decreases below the Thermal Shutdown Reset threshold (TSDU − 140°C typical). Once the device temperature falls below the 140°C the appropriate channel is enabled again. The thermal shutdown feature provides the protection from a catastrophic device failure due to accidental overheating. This protection is not intended to be used as a substitute for proper heat sinking. The long duration of the short circuit condition to some output channel could cause turn−off other output when heat sinking is not enough and temperature of the other output reach TSD temperature. Output Decoupling (COUT) The NCV8154 requires an output capacitor for each output connected as close as possible to the output pin of the regulator. The recommended capacitor value is 1 mF and X7R or X5R dielectric due to its low capacitance variations over the specified temperature range. The NCV8154 is designed to remain stable with minimum effective capacitance of 0.33 mF to account for changes with temperature, DC bias and package size. Especially for small package size capacitors such as 0201 the effective capacitance drops rapidly with the applied DC bias. There is no requirement for the minimum value of Equivalent Series Resistance (ESR) for the COUT but the maximum value of ESR should be less than 3 W. Larger output capacitors and lower ESR could improve the load transient response or high frequency PSRR. It is not recommended to use tantalum capacitors on the output due to their large ESR. The equivalent series resistance of tantalum capacitors is also strongly dependent on the temperature, increasing at low temperature. Power Dissipation As power dissipated in the NCV8154 increases, it might become necessary to provide some thermal relief. The maximum power dissipation supported by the device is dependent upon board design and layout. Mounting pad configuration on the PCB, the board material, and the ambient temperature affect the rate of junction temperature rise for the part. For reliable operation, junction temperature should be limited to +125°C. The maximum power dissipation the NCV8154 can handle is given by: Enable Operation The NCV8154 uses the dedicated EN pin for each output channel. This feature allows driving outputs separately. If the EN pin voltage is <0.4 V the device is guaranteed to be disabled. The pass transistor is turned−off so that there is virtually no current flow between the IN and OUT. The active discharge transistor is active so that the output voltage VOUT is pulled to GND through a 50 W resistor. In the disable state the device consumes as low as typ. 10 nA from the VIN. P D(MAX) + ƪTJ(MAX) * TAƫ q JA (eq. 1) The power dissipated by the NCV8154 for given application conditions can be calculated from the following equations: www.onsemi.com 14 NCV8154 P D [ ǒV IN1 @ I GND1Ǔ ) ǒV IN2 @ I GND2Ǔ ) ) I OUT1ǒV IN1 * V OUT1Ǔ ) I OUT2ǒV IN2 * V OUT2Ǔ (eq. 2) 1.2 PD(MAX), TA = 25°C, 2 oz Cu 230 1.1 1.0 210 0.9 190 PD(MAX), TA = 25°C, 1 oz Cu 170 0.8 0.7 150 qJA, 1 oz Cu 130 110 0.5 qJA, 2 oz Cu 90 0.6 0.4 PD(MAX), MAXIMUM POWER DISSIPATION (W) qJA, JUNCTION TO AMBIENT THERMAL RESISTANCE (°C/W) 250 0.3 70 50 0 100 200 300 400 500 600 0.2 700 COPPER HEAT SPREADER AREA (mm2) Figure 52. qJA and PD(MAX) vs. Copper Area − DFN10 0.70 315 PD(MAX), TA = 25°C, 2 oz Cu 290 0.65 0.60 PD(MAX), TA = 25°C, 1 oz Cu 0.55 265 240 qJA, 1 oz Cu 215 190 0.45 0.40 qJA, 2 oz Cu 165 0.50 0.35 140 0.30 115 0.25 90 0 100 200 300 400 500 600 PD(MAX), MAXIMUM POWER DISSIPATION (W) qJA, JUNCTION TO AMBIENT THERMAL RESISTANCE (°C/W) 340 0.20 700 COPPER HEAT SPREADER AREA (mm2) Figure 53. qJA and PD(MAX) vs. Copper Area − WDFN6 Reverse Current Turn−On Time The PMOS pass transistor has an inherent body diode which will be forward biased in the case that VOUT > VIN. Due to this fact in cases, where the extended reverse current condition can be anticipated the device may require additional external protection. The turn−on time is defined as the time period from EN assertion to the point in which VOUT will reach 98% of its nominal value. This time is dependent on various application conditions such as VOUT(NOM), COUT, TA. Power Supply Rejection Ratio To obtain good transient performance and good regulation characteristics place input and output capacitors close to the device pins and make the PCB traces wide. In order to minimize the solution size, use 0402 capacitors. Larger copper area connected to the pins will also improve the device thermal resistance. The actual power dissipation can be calculated from the equation above (Equation 2). Expose pad should be tied the shortest path to the GND pin. PCB Layout Recommendations The NCV8154 features very good Power Supply Rejection ratio. If desired the PSRR at higher frequencies in the range 100 kHz – 10 MHz can be tuned by the selection of COUT capacitor and proper PCB layout. www.onsemi.com 15 NCV8154 Table 6. ORDERING INFORMATION Device Marking Voltage Option (OUT1/OUT2) NCV8154MW180280TBG 8154W 1828 NCV8154MN300300TBG 8154N 3030 NCV8154MW300300TBG 8154W 3030 NCV8154MN330180TBG 8154N 3318 NCV8154MW330180TBG 8154W 3318 NCV8154MW330280TBG 8154W 3328 3.3 V / 2.8 V NCV8154MW330330TBG 8154W 3333 3.3 V / 3.3 V NCV8154MTW180280TCG DA 1.8 V / 2.8 V Active Discharge Features Yes Wettable Flank Yes Non−wettable Flank Yes Wettable Flank Yes Non−wettable Flank Package Shipping† DFN10 (Pb-Free) 3000 / Tape & Reel WDFN6 (Pb-Free) 3000 / Tape & Reel 3.0 V / 3.0 V 3.3 V / 1.8 V Yes Yes Wettable Flank Yes 1.8 V / 2.8 V No Wettable Flank †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 16 NCV8154 PACKAGE DIMENSIONS DFN10 3x3, 0.5P CASE 485C ISSUE C D PIN 1 REFERENCE EDGE OF PACKAGE A B L1 ÇÇÇ ÇÇÇ ÇÇÇ E DETAIL A Bottom View (Optional) 0.15 C 2X EXPOSED Cu TOP VIEW MOLD CMPD 0.15 C 2X (A3) DETAIL B 0.10 C A1 ÉÉÉ ÉÉÉ A 10X SIDE VIEW A1 D2 A3 DETAIL B Side View (Optional) SEATING PLANE 0.08 C 10X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. TERMINAL b MAY HAVE MOLD COMPOUND MATERIAL ALONG SIDE EDGE. MOLD FLASHING MAY NOT EXCEED 30 MICRONS ONTO BOTTOM SURFACE OF TERMINAL b. 6. DETAILS A AND B SHOW OPTIONAL VIEWS FOR END OF TERMINAL LEAD AT EDGE OF PACKAGE. 7. FOR DEVICE OPN CONTAINING W OPTION, DETAIL B ALTERNATE CONSTRUCTION IS NOT APPLICABLE. C SOLDERING FOOTPRINT* DETAIL A e L 1 5 2.6016 DIM A A1 A3 b D D2 E E2 e K L L1 MILLIMETERS MIN MAX 0.80 1.00 0.00 0.05 0.20 REF 0.18 0.30 3.00 BSC 2.40 2.60 3.00 BSC 1.70 1.90 0.50 BSC 0.19 TYP 0.35 0.45 0.00 0.03 E2 10X K 1.8508 2.1746 10 10X b 0.10 C A B 0.05 C 3.3048 6 NOTE 3 BOTTOM VIEW 10X 0.5651 10X 0.5000 PITCH 0.3008 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 17 NCV8154 PACKAGE DIMENSIONS WDFN6 1.5x1.5, 0.5P CASE 511BJ ISSUE B D L A B NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30mm FROM TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. L1 PIN ONE REFERENCE 0.10 C 2X 0.10 C 2X 0.05 C ÍÍÍ ÍÍÍ ÍÍÍ ÍÍÍ DETAIL A ALTERNATE TERMINAL CONSTRUCTIONS E ÉÉÉ ÉÉÉ EXPOSED Cu TOP VIEW DETAIL B A3 MOLD CMPD DETAIL B ÉÉÉ ÇÇÇ ÇÇÇ A3 A1 ALTERNATE CONSTRUCTIONS DIM A A1 A3 b D E e L L1 L2 MILLIMETERS MIN MAX 0.70 0.80 0.00 0.05 0.20 REF 0.20 0.30 1.50 BSC 1.50 BSC 0.50 BSC 0.40 0.60 --0.15 0.50 0.70 A 0.05 C A1 NOTE 4 C SIDE VIEW RECOMMENDED MOUNTING FOOTPRINT* SEATING PLANE 5X 6X DETAIL A 0.73 5X e 1 0.35 L 3 L2 1.80 0.83 6 4 6X DIMENSIONS: MILLIMETERS b 0.10 C A BOTTOM VIEW 0.50 PITCH 0.05 C *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. B NOTE 3 Bluetooth is a registered trademark of Bluetooth SIG. ZigBee is a registered trademark of ZigBee Alliance. 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