NCP154 D

NCP154
Dual 300 mA, Low IQ, Low
Dropout, Dual Input Voltage
Regulator
The NCP154 is 300 mA, Dual Output Linear Voltage Regulator that
offers two independent input pins and provides a very stable and
accurate voltage with ultra low noise and very high Power Supply
Rejection Ratio (PSRR) suitable for RF applications. The device
doesn’t require any additional noise bypass capacitor to achieve ultra
low noise performance. In order to optimize performance for battery
operated portable applications, the NCP154 employs the Adaptive
Ground Current Feature for low ground current consumption during
light-load conditions.
http://onsemi.com
XDFN8, 1.2x1.6
CASE 711AS
PIN CONNECTIONS
Features
• Operating Input Voltage Range: 1.9 V to 5.25 V
• Two Independent Input Voltage Pins
• Two Independent Output Voltage (for detail please refer to Ordering
•
•
•
•
•
•
•
•
Information)
Low IQ of typ. 55 mA per Channel
High PSRR: 75 dB at 1 kHz
Very Low Dropout: 140 mV Typical at 300 mA
Thermal Shutdown and Current Limit Protections
Stable with a 1 mF Ceramic Output Capacitor
Available in XDFN8 1.2 × 1.6 mm Package
Active Output Discharge for Fast Output Turn-Off
These are Pb-free Devices
GND
1
8
EN1
OUT1
2
7
IN1
OUT2
3
6
IN2
GND
4
5
EN2
EP
XDFN8
(Top View)
MARKING DIAGRAM
Typical Applications
• Smartphones, Tablets
• Wireless Handsets, Wireless LAN, Bluetooth®, ZigBee® Interfaces
• Other Battery Powered Applications
NCP154
VIN1
VOUT1
IN1
VIN2
OUT1
IN2
VOUT2
OUT2
XM
G
X
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 17 of this data sheet.
EN1
CIN1
1 mF
CIN2
1 mF
EN2
GND
COUT2
1 mF
COUT1
1 mF
Figure 1. Typical Application Schematic
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 2
1
Publication Order Number:
NCP154/D
NCP154
IN1
ENABLE
LOGIC
EN1
THERMAL
SHUTDOWN
BANDGAP
REFERENCE
MOSFET
DRIVER WITH
CURRENT LIMIT
OUT1
ACTIVE
DISCHARGE
EN1
GND
IN2
ENABLE
LOGIC
EN2
THERMAL
SHUTDOWN
BANDGAP
REFERENCE
MOSFET
DRIVER WITH
CURRENT LIMIT
OUT2
ACTIVE
DISCHARGE
EN2
GND
Figure 2. Simplified Schematic Block Diagram
Table 1. PIN FUNCTION DESCRIPTION
Pin No.
Pin Name
Description
1
GND
Power supply ground. Soldered to the copper plane allows for effective heat dissipation.
2
OUT1
Regulated output voltage of the first channel. A small 1 mF ceramic capacitor is needed from this pin to
ground to assure stability.
3
OUT2
Regulated output voltage of the second channel. A small 1 mF ceramic capacitor is needed from this pin to
ground to assure stability.
4
GND
Power supply ground. Soldered to the copper plane allows for effective heat dissipation.
5
EN2
Driving EN2 over 0.9 V turns-on OUT2. Driving EN below 0.4 V turns-off the OUT2 and activates the active
discharge.
6
IN2
Inputs pin for second channel. It is recommended to connect 1 mF ceramic capacitor close to the device pin.
7
IN1
Inputs pin for first channel. It is recommended to connect 1 mF ceramic capacitor close to the device pin.
8
EN1
Driving EN1 over 0.9 V turns-on OUT1. Driving EN below 0.4 V turns-off the OUT1 and activates the active
discharge.
−
EP
Exposed pad must be tied to ground. Soldered to the copper plane allows for effective thermal dissipation.
http://onsemi.com
2
NCP154
Table 2. ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Input Voltage (Note 1)
Value
Unit
VIN1, VIN2
−0.3 V to 6 V
V
Output Voltage
VOUT1, VOUT2
−0.3 V to VIN + 0.3 V or 6 V
V
Enable Inputs
VEN1, VEN2
−0.3 V to VIN + 0.3 V or 6 V
V
tSC
Indefinite
s
TJ(MAX)
150
°C
TSTG
−55 to 150
°C
ESD Capability, Human Body Model (Note 2)
ESDHBM
2,000
V
ESD Capability, Machine Model (Note 2)
ESDMM
200
V
Output Short Circuit Duration
Maximum Junction Temperature
Storage Temperature
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTIS and APPLICATION INFORMATION for Safe Operating Area.
2. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114)
ESD Machine Model tested per AEC−Q100−003 (EIA/JESD22−A115)
Latchup Current Maximum Rating tested per JEDEC standard: JESD78.
Table 3. THERMAL CHARACTERISTICS (Note 3)
Rating
Symbol
Thermal Characteristics, XDFN8 1.2 × 1.6 mm,
Thermal Resistance, Junction-to-Air
qJA
3. Single component mounted on 1 oz, FR4 PCB with 645 mm2 Cu area.
http://onsemi.com
3
Value
Unit
°C/W
160
NCP154
Table 4. ELECTRICAL CHARACTERISTICS
(−40°C ≤ TJ ≤ 85°C; VIN = VOUT(NOM) + 1 V or 2.5 V, whichever is greater; VEN = 0.9 V, IOUT = 1 mA, CIN = COUT = 1 mF.
Typical values are at TJ = +25°C. Min/Max values are specified for TJ = −40°C and TJ = 85°C respectively.) (Note 4)
Parameter
Test Conditions
Operating Input Voltage
VOUT > 2 V
Symbol
Min
Typ
Max
Unit
VIN
1.9
5.25
V
−2
+2
%
−60
+60
mV
Output Voltage Accuracy
−40°C ≤ TJ ≤ 85°C
Line Regulation
VOUT + 0.5 V ≤ VIN ≤ 5 V
RegLINE
0.02
0.1
%/V
Load Regulation
IOUT = 1 mA to 300 mA
RegLOAD
15
40
mV
VOUT(nom) = 1.5 V
360
470
mV
VOUT(nom) = 1.8 V
335
390
mV
VOUT(nom) = 2.7 V
165
275
mV
160
270
mV
VOUT(nom) = 3.0 V
150
260
mV
VOUT(nom) = 3.3 V
140
250
mV
Dropout Voltage (Note 5)
Output Current Limit
Quiescent Current
VOUT
VOUT ≤ 2 V
IOUT = 300 mA
VOUT(nom) = 2.8 V
VDO
VOUT = 90% VOUT(nom)
ICL
400
IOUT = 0 mA, EN1=VIN, EN2=0V or EN2=VIN, EN1=0V
IQ
55
100
mA
IQ
110
200
mA
IDIS
0.1
1
mA
IOUT1 = IOUT2 = 0 mA, VEN1 = VEN2 = VIN
Shutdown current (Note 6)
VEN ≤ 0.4 V, VIN = 5.25 V
EN Pin Threshold Voltage
High Threshold
Low Threshold
VEN Voltage increasing
VEN Voltage decreasing
EN Pin Input Current
VEN = VIN = 5.25 V
Power Supply Rejection Ratio
VIN = VOUT+1 V for VOUT > 2 V, VIN = 2.5 V,
for VOUT ≤ 2 V, IOUT = 10 mA
Output Noise Voltage
f = 10 Hz to 100 kHz
Active Discharge Resistance
VEN_HI
VEN_LO
mA
0.9
V
0.4
0.3
PSRR
75
dB
VN
75
mVrms
VIN = 4 V, VEN < 0.4 V
RDIS
50
W
Thermal Shutdown Temperature
Temperature increasing from TJ = +25°C
TSD
160
°C
Thermal Shutdown Hysteresis
Temperature falling from TSD
TSDH
f = 1 kHz
−
20
1.0
mA
IEN
−
°C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at
TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
5. Characterized when VOUT falls 100 mV below the regulated voltage at VIN = VOUT(NOM) + 1 V.
6. Shutdown Current is the current flowing into the IN pin when the device is in the disable state.
http://onsemi.com
4
NCP154
1.85
1.04
1.84
1.03
1.02
1.01
IOUT = 1 mA
1.00
IOUT = 300 mA
0.99
0.98
VIN = 2.5 V
VOUT = 1.0 V
CIN = COUT = 1 mF
0.97
0.96
0.95
−40 −25
VOUT, OUTPUT VOLTAGE (V)
VOUT, OUTPUT VOLTAGE (V)
1.05
−10
5
20
35
50
65
80
1.82
IOUT = 1 mA
1.81
1.80
IOUT = 300 mA
1.79
1.78
95
20
35
50
65
80
Figure 4. Output Voltage vs. Temperature –
VOUT = 1.0 V
3.35
3.34
2.83
2.82
IOUT = 1 mA
2.81
2.80
IOUT = 300 mA
2.79
2.78
VIN = 3.8 V
VOUT = 2.8 V
CIN = COUT = 1 mF
2.77
−10
5
20
35
50
65
80
95
3.32
IOUT = 1 mA
3.31
IOUT = 300 mA
3.30
3.29
3.28
VIN = 4.3 V
VOUT = 3.3 V
CIN = COUT = 1 mF
3.27
−10
5
20
35
50
65
80
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Output Voltage vs. Temperature –
VOUT = 1.0 V
Figure 6. Output Voltage vs. Temperature –
VOUT = 1.0 V
IQ, QUIESCENT CURRENT (mA)
60
VIN = 4.3 V
VOUT = 3.3 V
CIN = COUT = 1 mF
TJ = 85°C
420
TJ = 25°C
360
300
TJ = −40°C
240
180
120
60
0
30
60
90
85°C
−40°C
48
42
25°C
36
30
24
18
VIN = 4.3 V
VOUT = 3.3 V
CIN = COUT = 1 mF
12
6
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
IOUT, OUTPUT CURRENT (mA)
VIN, INPUT VOLTAGE (V)
Figure 7. Ground Current vs. Output Current
Figure 8. Quiescent Current vs. Input Voltage
http://onsemi.com
5
95
54
0
120 150 180 210 240 270 300
95
3.33
3.26
3.25
−40 −25
600
0
5
Figure 3. Output Voltage vs. Temperature –
VOUT = 1.0 V
2.85
480
−10
TJ, JUNCTION TEMPERATURE (°C)
2.84
540
VIN = 2.8 V
VOUT = 1.8 V
CIN = COUT = 1 mF
1.77
TJ, JUNCTION TEMPERATURE (°C)
2.76
2.75
−40 −25
IGND, GROUND CURRENT (mA)
1.83
1.76
1.75
−40 −25
VOUT, OUTPUT VOLTAGE (V)
VOUT, OUTPUT VOLTAGE (V)
TYPICAL CHARACTERISTICS
NCP154
TYPICAL CHARACTERISTICS
0.10
LINEREG, LINE REGULATION (%/V)
IQ, QUIESCENT CURRENT (mA)
60
58
56
54
52
50
48
46
VIN = 4.3 V
VOUT = 3.3 V
CIN = COUT = 1 mF
44
42
40
−40 −25
−10
5
20
35
50
65
80
95
0.04
0.02
0
−0.02
−0.04
−0.08
−0.10
−40 −25
5
20
35
50
65
80
Figure 9. Quiescent Current vs. Temperature
Figure 10. Line Regulation vs. Temperature –
VOUT = 1.0 V
0.06
0.04
0.02
0
−0.02
−0.04
VIN = 4.3 V
VOUT = 3.3 V
CIN = COUT = 1 mF
−0.06
−0.08
−0.10
−40 −25
−10
5
20
35
50
65
80
95
95
30
27
24
21
18
15
12
9
VIN = 2.5 V
VOUT = 1.0 V
CIN = COUT = 1 mF
6
3
0
−40 −25
−10
5
20
35
50
65
80
95
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Line Regulation vs. Temperature –
VOUT = 3.3 V
Figure 12. Load Regulation vs. Temperature –
VOUT = 1.0 V
200
30
VIN = 4.3 V
VOUT = 3.3 V
CIN = COUT = 1 mF
VDROP, DROPOUT VOLTAGE (mV)
27
−10
TJ, JUNCTION TEMPERATURE (°C)
0.08
24
VIN = 2.5 V
VOUT = 1.0 V
CIN = COUT = 1 mF
−0.06
REGLOAD, LOAD REGULATION (mV)
LINEREG, LINE REGULATION (%/V)
0.06
TJ, JUNCTION TEMPERATURE (°C)
0.10
REGLOAD, LOAD REGULATION (mV)
0.08
21
18
15
12
9
6
3
0
−40 −25
VIN = 4.3 V
VOUT = 3.3 V
CIN = COUT = 1 mF
175
150
TJ = 85°C
TJ = 25°C
125
100
TJ = −40°C
75
50
25
0
−10
5
20
35
50
65
80
95
0
25 50
75 100 125 150 175 200 225 250 275 300
TJ, JUNCTION TEMPERATURE (°C)
IOUT, OUTPUT CURRENT (mA)
Figure 13. Load Regulation vs. Temperature –
VOUT = 3.3 V
Figure 14. Dropout Voltage vs. Output Current
– VOUT = 3.3 V
http://onsemi.com
6
NCP154
TYPICAL CHARACTERISTICS
400
180
160
VIN = 4.3 V
VOUT = 3.3 V
CIN = COUT = 1 mF
IOUT = 300 mA
VDO, DROPOUT VOLTAGE (mV)
VDROP, DROPOUT VOLTAGE (mV)
200
140
120
100
IOUT = 150 mA
80
60
IOUT = 0 mA
40
20
0
−40 −25
5
35
20
50
65
80
200
150
100
50
1.9
1.5 1.7
2.1
2.3
2.5
2.7
2.9
3.1
3.3 3.5
TJ, JUNCTION TEMPERATURE (°C)
VOUT, OUTPUT VOLTAGE (V)
Figure 15. Dropout Voltage vs. Temperature
Figure 16. Dropout Voltage vs. Output Voltage
ISC, SHORT CIRCUIT CURRENT (mA)
VOUT = 90% VOUT(NOM)
CIN = COUT = 1 mF
525
VIN = 3.8 V
500
475
VIN = 5.25 V
450
425
400
375
350
−40 −25
ISC, SHORT CIRCUIT CURRENT (mA)
250
95
−10
5
20
35
50
65
80
95
600
575
550
VOUT = 0 V
CIN = COUT = 1 mF
VIN = 3.8 V
525
500
475
VIN = 5.25 V
450
425
400
375
350
−40 −25
−10
5
20
35
50
65
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 17. Current Limit vs. Temperature
Figure 18. Short Circuit Current vs.
Temperature
530
30
520
27
IDIS, DISABLE CURRENT (nA)
ICL, CURRENT LIMIT (mA)
550
300
0
−10
600
575
350
510
500
490
480
470
460
VOUT = 0 V
CIN = COUT = 1 mF
450
440
430
2.5 2.8
3.1
3.4
3.7
4.0
4.3
4.6
4.9
5.2
5.5
24
21
80
95
80
95
VIN = 4.3 V
VOUT = 0 V
VEN = 0 V
CIN = COUT = 1 mF
18
15
12
9
6
3
0
−40 −25
−10
5
20
35
50
65
VIN, INPUT VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 19. Short Circuit Current vs. Input
Voltage
Figure 20. Disable Current vs. Temperature
http://onsemi.com
7
NCP154
450
400
0.8
OFF → ON
0.7
ON → OFF
0.6
0.5
0.4
0.3
VIN = 4.3 V
VOUT = 3.3 V
CIN = COUT = 1 mF
0.2
0.1
0
−40 −25
RDIS, DISCHARGE RESISTIVITY (W)
IEN, ENABLE CURRENT (nA)
1.0
0.9
−10
5
20
50
35
65
300
250
200
150
VIN = 4.3 V
VOUT = 3.3 V
CIN = COUT = 1 mF
100
0
−40 −25
95
80
−10
5
20
35
50
65
80
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 21. Enable Thresholds vs. Temperature
Figure 22. Current to Enable Pin vs.
Temperature
100
100
90
90
80
70
60
50
40
30
VIN = 4 V
VOUT = 1 V
CIN = COUT = 1 mF
20
10
0
−40 −25
−10
5
20
35
50
65
80
70
95
1 mA
10 mA
80
100 mA
60
50
40
VIN = 2.5 V + 100 mVPP
VOUT = 1.0 V
CIN = none
COUT = 1 mF, MLCC
30
20
10
0
0.1
95
1
10
300 mA
150 mA
100
1,000
10,000
TJ, JUNCTION TEMPERATURE (°C)
FREQUENCY (kHz)
Figure 23. Discharge Resistivity vs.
Temperature
Figure 24. Power Supply Rejection Ratio,
VOUT = 1.0 V
100
100
90
80
1 mA
10 mA
70
VOUT = 3.3 V
10
100 mA
60
ESR (W)
RR, RIPPLE REJECTION (dB)
350
50
RR, RIPPLE REJECTION (dB)
VEN, ENABLE VOLTAGE (V)
TYPICAL CHARACTERISTICS
50
40
30
20
10
0
VOUT = 1.0 V
1
VIN = 4.3 V + 100 mVPP
VOUT = 3.3 V
CIN = none
COUT = 1 mF, MLCC
VIN = VOUT + 1 V or 2.5 V
CIN = COUT = 1 mF, MLCC,
size 1206
300 mA
150 mA
0.1
0.1
1
10
100
1,000
10,000
0
30
60
90
120 150 180 210 240 270 300
FREQUENCY (kHz)
IOUT, OUTPUT CURRENT (mA)
Figure 25. Power Supply Rejection Ratio,
VOUT = 3.3 V
Figure 26. Output Capacitor ESR vs. Output
Current
http://onsemi.com
8
NCP154
OUTPUT VOLTAGE NOISE (mV/sqrtHz)
TYPICAL CHARACTERISTICS
10
RMS Output Noise (mV)
1
150 mA
1 mA
0.1
0.01
10 mA
VIN = 2.5 V
VOUT = 1.0 V
CIN = COUT = 1 mF
IOUT
10 Hz – 100 kHz
100 Hz – 100 kHz
1 mA
40.83
40.27
10 mA
36.03
35.38
150 mA
36.54
35.97
300 mA
37.05
36.48
300 mA
0.001
0.01
0.1
1
10
100
1000
FREQUENCY (kHz)
OUTPUT VOLTAGE NOISE (mV/sqrtHz)
Figure 27. Output Voltage Noise Spectral Density for VOUT = 1.0 V, COUT = 1 mF
10
RMS Output Noise (mV)
1
300 mA
1 mA
10 mA
0.1
0.01
VIN = 2.8 V
VOUT = 1.8 V
CIN = COUT = 1 mF
IOUT
10 Hz – 100 kHz
100 Hz – 100 kHz
1 mA
77.84
77.28
10 mA
71.71
70.48
150 mA
71.95
70.88
300 mA
72.71
71.67
150 mA
0.001
0.01
0.1
1
10
100
1000
FREQUENCY (kHz)
OUTPUT VOLTAGE NOISE (mV/sqrtHz)
Figure 28. Output Voltage Noise Spectral Density for VOUT = 1.8 V, COUT = 1 mF
10
RMS Output Noise (mV)
1
150 mA
1 mA
10 mA
0.1
0.01
VIN = 4.3 V
VOUT = 3.3 V
CIN = COUT = 1 mF
IOUT
10 Hz – 100 kHz
100 Hz – 100 kHz
1 mA
119.7
117.87
10 mA
113.47
111.47
150 mA
113.84
112.05
300 mA
115.95
114.03
300 mA
0.001
0.01
0.1
1
10
100
1000
FREQUENCY (kHz)
Figure 29. Output Voltage Noise Spectral Density for VOUT = 3.3 V, COUT = 1 mF
http://onsemi.com
9
NCP154
VOUT
500 mV/div
VIN = 2.5 V
VOUT = 1.0 V
IOUT = 10 mA
CIN = COUT = 1 mF
VEN
IIN
VIN = 2.5 V
VOUT = 1.0 V
IOUT = 10 mA
CIN = COUT = 4.7 mF
VOUT
40 ms/div
Figure 30. Enable Turn−on Response –
VOUT = 1.0 V, COUT = 1 mF
Figure 31. Enable Turn−on Response –
VOUT = 1.0 V, COUT = 4.7 mF
500 mV/div
40 ms/div
200 mA/div
VEN
IIN
VOUT
1 V/div
VIN = 4.3 V
VOUT = 3.3 V
IOUT = 10 mA
CIN = COUT = 1 mF
VEN
IIN
VIN = 4.3 V
VOUT = 3.3 V
IOUT = 10 mA
CIN = COUT = 4.7 mF
VOUT
40 ms/div
40 ms/div
Figure 32. Enable Turn−on Response –
VOUT = 3.3 V, COUT = 1 mF
Figure 33. Enable Turn−on Response –
VOUT = 3.3 V, COUT = 4.7 mF
VIN
500 mV/div
VIN = 3.8 V to 4.8 V
IOUT = 10 mA
CIN = none
COUT = 1 mF
tRISE = 1 ms
20 mV/div
1 V/div
20 mV/div 500 mV/div
500 mV/div 100 mA/div
IIN
100 mA/div 500 mV/div
50 mA/div
VEN
500 mV/div
500 mV/div
TYPICAL CHARACTERISTICS
VOUT
VIN = 4.8 V to 3.8 V
IOUT = 10 mA
CIN = none
COUT = 1 mF
VIN
tFALL = 1 ms
VOUT
8 ms/div
8 ms/div
Figure 34. Line Transient Response – Rising
Edge, VOUT = 3.3 V, IOUT = 10 mA
Figure 35. Line Transient Response – Falling
Edge, VOUT = 3.3 V, IOUT = 10 mA
http://onsemi.com
10
NCP154
500 mV/div
tRISE = 1 ms
VIN = 3.8 V to 4.8 V
IOUT = 300 mA
CIN = none
COUT = 1 mF
tFALL = 1 ms
20 mV/div
VIN
VOUT
VOUT
4 ms/div
4 ms/div
Figure 36. Line Transient Response– Rising
Edge, VOUT = 3.3 V, IOUT = 300 mA
Figure 37. Line Transient Response– Falling
Edge, VOUT = 3.3 V, IOUT = 300 mA
tRISE = 1 ms
VOUT
500 mV/div
VIN
VIN = 3.8 V to 4.8 V
IOUT = 10 mA
CIN = none
COUT = 4.7 mF
tFALL = 1 ms
VOUT
4 ms/div
Figure 38. Line Transient Response– Rising Edge,
VOUT = 3.3 V, IOUT = 10 mA, COUT = 4.7 mF
Figure 39. Line Transient Response– Falling
Edge, VOUT = 3.3 V, IOUT = 10 mA, COUT = 4.7 mF
IOUT1
50 mV/div 50 mV/div 100 mA/div
tRISE = 500 ns
IOUT1
VIN = 4.8 V to 3.8 V
IOUT = 10 mA
CIN = none
COUT = 4.7 mF
VIN
4 ms/div
50 mV/div 50 mV/div 100 mA/div
VIN = 4.8 V to 3.8 V
IOUT = 300 mA
CIN = none
COUT = 1 mF
VIN
20 mV/div
20 mV/div
500 mV/div
20 mV/div
500 mV/div
TYPICAL CHARACTERISTICS
VIN = 2.8 V
VOUT1 = 1.0 V, VOUT2 = 1.8 V
IOUT2 = 10 mA
COUT1 = 1 mF, COUT2 = 1 mF
VOUT1
VOUT2
tFALL = 500 ns
VIN = 2.8 V
VOUT1 = 1.0 V, VOUT2 = 1.8 V
IOUT2 = 10 mA
COUT1 = 1 mF, COUT2 = 1 mF
VOUT1
VOUT2
4 ms/div
100 ms/div
Figure 40. Load Transient Response − 1.0 V –
Rising Edge, IOUT1 = 100 mA to 300 mA
Figure 41. Load Transient Response − 1.0 V –
Falling Edge, IOUT1 = 300 mA to 100 mA
http://onsemi.com
11
NCP154
TYPICAL CHARACTERISTICS
IOUT1
VOUT1
100 mA/div
IOUT1
VIN = 2.8 V
VOUT1 = 1.0 V, VOUT2 = 1.8 V
IOUT2 = 10 mA
COUT1 = 1 mF, COUT2 = 1 mF
50 mV/div 50 mV/div
50 mV/div 50 mV/div
100 mA/div
tRISE = 500 ns
VOUT2
VOUT2
10 ms/div
Figure 42. Load Transient Response − 1.0 V –
Rising Edge, IOUT1 = 1 mA to 300 mA
Figure 43. Load Transient Response − 1.0 V –
Falling Edge, IOUT1 = 300 mA to 1 mA
IOUT1
VOUT1
100 mA/div
VIN = 2.8 V
VOUT1 = 1.0 V, VOUT2 = 1.8 V
IOUT2 = 10 mA
COUT1 = 1 mF, COUT2 = 1 mF
50 mV/div 50 mV/div
IOUT1
VOUT2
VIN = 2.8 V
VOUT1 = 1.0 V, VOUT2 = 1.8 V
IOUT2 = 10 mA
COUT1 = 1 mF, COUT2 = 1 mF
tFALL = 500 ns
VOUT1
VOUT2
4 ms/div
4 ms/div
Figure 44. Load Transient Response − 1.0 V –
Rising Edge, IOUT1 = 50 mA to 300 mA
Figure 45. Load Transient Response − 1.0 V –
Falling Edge, IOUT1 = 300 mA to 50 mA
IOUT1
IOUT1
100 mA/div
tRISE = 500 ns
VIN = 4.3 V
VOUT1 = 3.3 V, VOUT2 = 2.8 V
IOUT2 = 10 mA
COUT1 = 1 mF, COUT2 = 1 mF
50 mV/div 50 mV/div
100 mA/div
50 mV/div 50 mV/div
100 mA/div
VOUT1
4 ms/div
tRISE = 500 ns
50 mV/div 50 mV/div
tFALL = 500 ns
VIN = 2.8 V
VOUT1 = 1.0 V, VOUT2 = 1.8 V
IOUT2 = 10 mA
COUT1 = 1 mF, COUT2 = 1 mF
VOUT1
VOUT2
tFALL = 500 ns
VIN = 4.3 V
VOUT1 = 3.3 V, VOUT2 = 2.8 V
IOUT2 = 10 mA
COUT1 = 1 mF, COUT2 = 1 mF
VOUT1
VOUT2
4 ms/div
100 ms/div
Figure 46. Load Transient Response − 3.3 V –
Rising Edge, IOUT1 = 100 mA to 300 mA
Figure 47. Load Transient Response – 3.3 V –
Falling Edge, IOUT1 = 300 mA to 100 mA
http://onsemi.com
12
NCP154
TYPICAL CHARACTERISTICS
IOUT1
100 mA/div
IOUT1
VIN = 4.3 V
VOUT1 = 3.3 V, VOUT2 = 2.8 V
IOUT2 = 10 mA
COUT1 = 1 mF, COUT2 = 1 mF
50 mV/div 50 mV/div
50 mV/div 50 mV/div
100 mA/div
tRISE = 500 ns
VOUT1
VOUT2
VOUT2
10 ms/div
Figure 48. Load Transient Response − 3.3 V –
Rising Edge, IOUT1 = 1 mA to 300 mA
Figure 49. Load Transient Response – 3.3 V –
Falling Edge, IOUT1 = 300 mA to 1 mA
IOUT1
VOUT1
100 mA/div
IOUT1
VIN = 4.3 V
VOUT1 = 3.3 V, VOUT2 = 2.8 V
IOUT2 = 10 mA
COUT1 = 1 mF, COUT2 = 1 mF
50 mV/div 50 mV/div
100 mA/div
50 mV/div 50 mV/div
VOUT1
4 ms/div
tRISE = 500 ns
VOUT2
VIN = 4.3 V
VOUT1 = 3.3 V, VOUT2 = 2.8 V
IOUT2 = 10 mA
COUT1 = 1 mF, COUT2 = 1 mF
tFALL = 500 ns
VOUT1
VOUT2
4 ms/div
4 ms/div
Figure 50. Load Transient Response − 3.3 V –
Rising Edge, IOUT1 = 50 mA to 300 mA
Figure 51. Load Transient Response – 3.3 V –
Falling Edge, IOUT1 = 300 mA to 50 mA
VEN
500 mV/div
500 mV/div
VEN
tRISE = 500 ns
VOUT
COUT = 4.7 mF
VIN = 4.3 V
VOUT = 3.3 V
IOUT = 0 mA
COUT = 1 mF, 4.7 mF
tRISE = 500 ns
VOUT
COUT = 4.7 mF
1 V/div
500 mV/div
tFALL = 500 ns
VIN = 4.3 V
VOUT1 = 3.3 V, VOUT2 = 2.8 V
IOUT2 = 10 mA
COUT1 = 1 mF, COUT2 = 1 mF
COUT = 1 mF
VIN = 4.3 V
VOUT = 3.3 V
IOUT = 0 mA
COUT = 1 mF, 4.7 mF
COUT = 1 mF
200 ms/div
200 ms/div
Figure 52. Enable Turn−Off – VOUT = 1.0 V
Figure 53. Enable Turn−Off – VOUT = 3.3 V
http://onsemi.com
13
NCP154
TYPICAL CHARACTERISTICS
Short circuit
current
500 mA/div
VIN
VOUT1
1 V/div
1 V/div
VOUT2
VIN = 4.3 V
VOUT1 = 3.3 V, VOUT2 = 2.8 V
IOUT1 = 10 mA, IOUT2 = 10 mA
CIN = COUT1 = COUT2 = 1 mF
Overheating
IOUT
VOUT
TSD cycling
Thermal
Shutdown
VIN = 5.25 V
VOUT = 3.3 V
CIN = COUT = 1 mF
Short circuit
event
20 ms/div
4 ms/div
Figure 54. Turn−on/off − Slow Rising VIN
Figure 55. Short Circuit and Thermal
Shutdown
http://onsemi.com
14
NCP154
General
If the EN pin voltage >0.9 V the device is guaranteed to
be enabled. The NCP154 regulates the output voltage and
the active discharge transistor is turned−off.
The both EN pin has internal pull−down current source
with typ. value of 300 nA which assures that the device is
turned−off when the EN pin is not connected. In the case
where the EN function isn’t required the EN should be tied
directly to IN.
The NCP154 is a dual output high performance 300 mA
Low Dropout Linear Regulator. This device delivers very
high PSRR (75 dB at 1 kHz) and excellent dynamic
performance as load/line transients. In connection with low
quiescent current this device is very suitable for various
battery powered applications such as tablets, cellular phones,
wireless and many others. Each output is fully protected in
case of output overload, output short circuit condition and
overheating, assuring a very robust design. The NCP154
device is housed in XDFN−8 1.6 mm x 1.2 mm package
which is useful for space constrains application.
Output Current Limit
Output Current is internally limited within the IC to a
typical 400 mA. The NCP154 will source this amount of
current measured with a voltage drops on the 90% of the
nominal VOUT. If the Output Voltage is directly shorted to
ground (VOUT = 0 V), the short circuit protection will limit
the output current to 520 mA (typ). The current limit and
short circuit protection will work properly over whole
temperature range and also input voltage range. There is no
limitation for the short circuit duration. This protection
works separately for each channel. Short circuit on the one
channel do not influence second channel which will work
according to specification.
Input Capacitor Selection (CIN)
It is recommended to connect at least a 1 mF Ceramic X5R
or X7R capacitor as close as possible to the IN pin of the
device. This capacitor will provide a low impedance path for
unwanted AC signals or noise modulated onto constant
input voltage. There is no requirement for the min. or max.
ESR of the input capacitor but it is recommended to use
ceramic capacitors for their low ESR and ESL. A good input
capacitor will limit the influence of input trace inductance
and source resistance during sudden load current changes.
Larger input capacitor may be necessary if fast and large
load transients are encountered in the application.
Thermal Shutdown
When the die temperature exceeds the Thermal Shutdown
threshold (TSD − 160°C typical), Thermal Shutdown event
is detected and the affected channel is turn−off. Second
channel still working. The channel which is overheated will
remain in this state until the die temperature decreases below
the Thermal Shutdown Reset threshold (TSDU − 140°C
typical). Once the device temperature falls below the 140°C
the appropriate channel is enabled again. The thermal
shutdown feature provides the protection from a
catastrophic device failure due to accidental overheating.
This protection is not intended to be used as a substitute for
proper heat sinking. The long duration of the short circuit
condition to some output channel could cause turn−off other
output when heat sinking is not enough and temperature of
the other output reach TSD temperature.
Output Decoupling (COUT)
The NCP154 requires an output capacitor for each output
connected as close as possible to the output pin of the
regulator. The recommended capacitor value is 1 mF and
X7R or X5R dielectric due to its low capacitance variations
over the specified temperature range. The NCP154 is
designed to remain stable with minimum effective
capacitance of 0.33 mF to account for changes with
temperature, DC bias and package size. Especially for small
package size capacitors such as 0201 the effective
capacitance drops rapidly with the applied DC bias.
There is no requirement for the minimum value of
Equivalent Series Resistance (ESR) for the COUT but the
maximum value of ESR should be less than 3 W. Larger
output capacitors and lower ESR could improve the load
transient response or high frequency PSRR. It is not
recommended to use tantalum capacitors on the output due
to their large ESR. The equivalent series resistance of
tantalum capacitors is also strongly dependent on the
temperature, increasing at low temperature.
Power Dissipation
As power dissipated in the NCP154 increases, it might
become necessary to provide some thermal relief. The
maximum power dissipation supported by the device is
dependent upon board design and layout. Mounting pad
configuration on the PCB, the board material, and the
ambient temperature affect the rate of junction temperature
rise for the part.
The maximum power dissipation the NCP154 can handle
is given by:
Enable Operation
The NCP154 uses the dedicated EN pin for each output
channel. This feature allows driving outputs separately.
If the EN pin voltage is <0.4 V the device is guaranteed to
be disabled. The pass transistor is turned−off so that there is
virtually no current flow between the IN and OUT. The active
discharge transistor is active so that the output voltage VOUT
is pulled to GND through a 50 W resistor. In the disable state
the device consumes as low as typ. 10 nA from the VIN.
P D(MAX) +
ƪ125 oC * T Aƫ
q JA
(eq. 1)
The power dissipated by the NCP154 for given
application conditions can be calculated from the following
equations:
P D [ ǒV IN1 @ I GND1Ǔ ) ǒV IN2 @ I GND2Ǔ )
) I OUT1ǒV IN1 * V OUT1Ǔ ) I OUT2ǒV IN2 * V OUT2Ǔ
http://onsemi.com
15
(eq. 2)
qJA, JUNCTION TO AMBIENT THERMAL RESISTANCE (°C/W)
240
1.00
220
PD(MAX), TA = 25°C, 2 oz Cu
200
PD(MAX), TA = 25°C, 1 oz Cu
180
0.75
160
qJA, 1 oz Cu
140
qJA, 2 oz Cu
120
0.50
100
80
60
0
100
200
300
400
500
600
0.25
700
PD(MAX), MAXIMUM POWER DISSIPATION (W)
NCP154
COPPER HEAT SPREADER AREA (mm2)
Figure 56. qJA vs. Copper Area (XDFN-8)
Reverse Current
Turn−On Time
The PMOS pass transistor has an inherent body diode
which will be forward biased in the case that VOUT > VIN.
Due to this fact in cases, where the extended reverse current
condition can be anticipated the device may require
additional external protection.
The turn−on time is defined as the time period from EN
assertion to the point in which VOUT will reach 98% of its
nominal value. This time is dependent on various
application conditions such as VOUT(NOM), COUT, TA.
Power Supply Rejection Ratio
To obtain good transient performance and good regulation
characteristics place input and output capacitors close to the
device pins and make the PCB traces wide. In order to
minimize the solution size, use 0402 capacitors. Larger
copper area connected to the pins will also improve the
device thermal resistance. The actual power dissipation can
be calculated from the equation above (Equation 2). Expose
pad should be tied the shortest path to the GND pin.
PCB Layout Recommendations
The NCP154 features very good Power Supply Rejection
ratio. If desired the PSRR at higher frequencies in the range
100 kHz – 10 MHz can be tuned by the selection of COUT
capacitor and proper PCB layout.
http://onsemi.com
16
NCP154
Table 5. ORDERING INFORMATION
Voltage Option*
(OUT1/OUT2)
Marking
NCP154MX280280TAG
2.8 V / 2.8 V
DA
NCP154MX180280TAG
1.8 V / 2.8 V
DC
NCP154MX330180TAG
3.3 V / 1.8 V
DD
NCP154MX300180TAG
3.0 V / 1.8 V
DE
NCP154MX330280TAG
3.3 V / 2.8 V
DF
NCP154MX330330TAG
3.3 V / 3.3 V
DG
NCP154MX330300TAG
3.3 V / 3.0 V
DH
NCP154MX300300TAG
3.0 V / 3.0 V
DJ
NCP154MX100180TAG
1.0 V / 1.8 V
DK
NCP154MX150280TAG
1.5 V / 2.8 V
DL
NCP154MX180290TAG
1.8 V / 2.9 V
DM
NCP154MX180300TAG
1.8 V / 3.0 V
DN
NCP154MX280270TAG
2.8 V / 2.7 V
DP
NCP154MX310310TAG
3.1 V / 3.1 V
DQ
NCP154MX330285TAG
3.3 V / 2.85 V
DR
NCP154MX180270TAG
1.8 V / 2.7 V
DT
Device
Package
Shipping †
XDFN−8
(Pb-Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*Contact factory for other voltage options. Output voltage range 1.0 V to 3.3 V with step 50 mV.
http://onsemi.com
17
NCP154
PACKAGE DIMENSIONS
XDFN8 1.6x1.2, 0.4P
CASE 711AS
ISSUE A
D
8X
ÍÍÍÍ
ÍÍÍÍ
ÍÍÍÍ
OPTIONAL
CONSTRUCTION
0.10 C
0.10 C
DIM
A
A1
b
D
D2
E
E2
e
L
L1
E
ÉÉ
ÇÇ
ÇÇ
EXPOSED Cu
0.10 C
2X
L1
DETAIL A
PIN ONE
IDENTIFIER
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
L
A
B
TOP VIEW
MOLD CMPD
DETAIL B
OPTIONAL
CONSTRUCTION
A
DETAIL B
MILLIMETERS
MIN
MAX
0.30
0.45
0.00
0.05
0.13
0.23
1.60 BSC
1.20
1.40
1.20 BSC
0.20
0.40
0.40 BSC
0.15
0.25
0.05 REF
A1
8X
0.08 C
NOTE 3
C
SIDE VIEW
1
1.40
E2
L1
8X
8
L
8X
0.35
4
0.44
8X
1.44
PACKAGE
OUTLINE
D2
DETAIL A
8X
RECOMMENDED
MOUNTING FOOTPRINT*
SEATING
PLANE
5
8X
e
e/2
1
0.26
0.40
PITCH
DIMENSIONS: MILLIMETERS
b
0.10 C A
B
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
0.05 C
BOTTOM VIEW
Bluetooth is a registered trademark of Bluetooth SIG.
ZigBee is a registered trademark of ZigBee Alliance.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
18
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NCP154/D