MUN2236, MMUN2236L, MUN5236, DTC115EE, DTC115EM3 Digital Transistors (BRT) R1 = 100 kW, R2 = 100 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base− emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. Features • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C) Rating R1 R2 PIN 2 EMITTER (GROUND) MARKING DIAGRAMS XX MG G SC−59 CASE 318D STYLE 1 XXX MG G SOT−23 CASE 318 STYLE 6 1 1 Symbol Max Unit Collector−Base Voltage VCBO 50 Vdc Collector−Emitter Voltage VCEO 50 Vdc IC 100 mAdc Input Forward Voltage VIN(fwd) 40 Vdc Input Reverse Voltage VIN(rev) 10 Vdc Collector Current − Continuous PIN 1 BASE (INPUT) PIN 3 COLLECTOR (OUTPUT) XX MG G SC−70/SOT−323 CASE 419 STYLE 3 XX M SC−75 CASE 463 STYLE 1 XX M SOT−723 CASE 631AA STYLE 1 1 1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1 XXX M G = Specific Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2013 February, 2013 − Rev. 2 1 Publication Order Number: DTC115E/D MUN2236, MMUN2236L, MUN5236, DTC115EE, DTC115EM3 Table 1. ORDERING INFORMATION Part Marking Package Shipping† 8N SC−59 (Pb−Free) 3000 / Tape & Reel AA5 SOT−23 (Pb−Free) 3000 / Tape & Reel MUN5236T1G, NSVMUN5236T1G* 8N SC−70/SOT−323 (Pb−Free) 3000 / Tape & Reel DTC115EET1G 8N SC−75 (Pb−Free) 3000 / Tape & Reel DTC115EM3T5G 8N SOT−723 (Pb−Free) 8000 / Tape & Reel Device MUN2236T1G MMUN2236LT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. PD, POWER DISSIPATION (mW) 300 250 (1) SC−75 and SC−70/SOT323; Minimum Pad (2) SC−59; Minimum Pad (3) SOT−23; Minimum Pad (4) SOT−723; Minimum Pad 200 150 (1) (2) (3) (4) 100 50 0 −50 −25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve http://onsemi.com 2 MUN2236, MMUN2236L, MUN5236, DTC115EE, DTC115EM3 Table 2. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 230 338 1.8 2.7 mW THERMAL CHARACTERISTICS (SC−59) (MUN2236) Total Device Dissipation TA = 25°C (Note 1) (Note 2) (Note 1) (Note 2) Derate above 25°C PD mW/°C Thermal Resistance, Junction to Ambient (Note 1) (Note 2) RqJA 540 370 °C/W Thermal Resistance, Junction to Lead (Note 1) (Note 2) RqJL 264 287 °C/W TJ, Tstg −55 to +150 °C 246 400 2.0 3.2 mW Junction and Storage Temperature Range THERMAL CHARACTERISTICS (SOT−23) (MMUN2236L) Total Device Dissipation TA = 25°C (Note 1) (Note 2) (Note 1) (Note 2) Derate above 25°C PD mW/°C Thermal Resistance, Junction to Ambient (Note 1) (Note 2) RqJA 508 311 °C/W Thermal Resistance, Junction to Lead (Note 1) (Note 2) RqJL 174 208 °C/W TJ, Tstg −55 to +150 °C 202 310 1.6 2.5 mW Junction and Storage Temperature Range THERMAL CHARACTERISTICS (SC−70/SOT−323) (MUN5236) Total Device Dissipation TA = 25°C (Note 1) (Note 2) (Note 1) (Note 2) Derate above 25°C PD mW/°C Thermal Resistance, Junction to Ambient (Note 1) (Note 2) RqJA 618 403 °C/W Thermal Resistance, Junction to Lead (Note 1) (Note 2) RqJL 280 332 °C/W TJ, Tstg −55 to +150 °C 200 300 1.6 2.4 mW Junction and Storage Temperature Range THERMAL CHARACTERISTICS (SC−75) (DTC115EE) Total Device Dissipation TA = 25°C (Note 1) (Note 2) (Note 1) (Note 2) Derate above 25°C Thermal Resistance, Junction to Ambient (Note 1) (Note 2) Junction and Storage Temperature Range PD mW/°C RqJA 600 400 °C/W TJ, Tstg −55 to +150 °C 260 600 2.0 4.8 mW THERMAL CHARACTERISTICS (SOT−723) (DTC115EM3) Total Device Dissipation TA = 25°C (Note 1) (Note 2) (Note 1) (Note 2) Derate above 25°C Thermal Resistance, Junction to Ambient (Note 1) (Note 2) Junction and Storage Temperature Range 1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 x 1.0 Inch Pad. http://onsemi.com 3 PD mW/°C RqJA 480 205 °C/W TJ, Tstg −55 to +150 °C MUN2236, MMUN2236L, MUN5236, DTC115EE, DTC115EM3 Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted) Characteristic Symbol Min Typ Max − − 100 − − 500 − − 0.05 50 − − 50 − − 80 150 − − − 0.25 − 1.2 0.5 3.0 1.7 − − − 0.2 4.9 − − Unit OFF CHARACTERISTICS Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO Collector−Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) V(BR)CEO nAdc nAdc mAdc Vdc Vdc ON CHARACTERISTICS hFE DC Current Gain (Note 3) (IC = 5.0 mA, VCE = 10 V) Collector−Emitter Saturation Voltage (Note 3) (IC = 10 mA, IB = 0.3 mA) VCE(sat) Input Voltage (off) (VCE = 5.0 V, IC = 100 mA) Vi(off) Input Voltage (on) (VCE = 0.3 V, IC = 1.0 mA) Vi(on) Output Voltage (on) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW) VOL Output Voltage (off) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) VOH Input Resistor R1 70 100 130 Resistor Ratio R1/R2 0.8 1.0 1.2 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. http://onsemi.com 4 Vdc Vdc Vdc Vdc Vdc kW MUN2236, MMUN2236L, MUN5236, DTC115EE, DTC115EM3 1000 1 VCE = 10 V IC/IB = 10 TA = −25°C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR−EMITTER VOLTAGE (V) TYPICAL CHARACTERISTICS MUN2236, MMUN2236L, MUN5236, NSVMUN5236, DTC115EE, DTC115EM3 25°C 75°C 0.1 0.01 75°C TA = −25°C 100 0 5 15 25 10 20 30 IC, COLLECTOR CURRENT (mA) 35 10 40 10 1 IC, COLLECTOR CURRENT (mA) 0.1 Figure 2. VCE(sat) versus IC 100 IC, COLLECTOR CURRENT (mA) 2.4 2.0 1.6 1.2 0.8 0.4 0 0 10 20 30 40 VR, REVERSE VOLTAGE (V) TA = −25°C 10 25°C 1 0.1 50 75°C VO = 5 V 0 Figure 4. Output Capacitance 5 VO = 0.2 V 10 15 20 25 30 Vin, INPUT VOLTAGE (V) 25°C TA = −25°C 75°C 10 1 0.1 0 5 35 Figure 5. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (V) Cob, CAPACITANCE (pF) f = 10 kHz lE = 0 A TA = 25°C 2.8 100 Figure 3. DC Current Gain 3.6 3.2 25°C 10 20 15 25 IC, COLLECTOR CURRENT (mA) 30 Figure 6. Input Voltage versus Output Current http://onsemi.com 5 35 40 MUN2236, MMUN2236L, MUN5236, DTC115EE, DTC115EM3 PACKAGE DIMENSIONS SC−59 CASE 318D−04 ISSUE H D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3 HE 1 DIM A A1 b c D E e L HE E 2 b e MILLIMETERS NOM MAX 1.15 1.30 0.06 0.10 0.43 0.50 0.14 0.18 2.90 3.10 1.50 1.70 1.90 2.10 0.40 0.60 2.80 3.00 STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR C A MIN 1.00 0.01 0.35 0.09 2.70 1.30 1.70 0.20 2.50 L A1 SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.4 0.094 1.0 0.039 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 MIN 0.039 0.001 0.014 0.003 0.106 0.051 0.067 0.008 0.099 INCHES NOM 0.045 0.002 0.017 0.005 0.114 0.059 0.075 0.016 0.110 MAX 0.051 0.004 0.020 0.007 0.122 0.067 0.083 0.024 0.118 MUN2236, MMUN2236L, MUN5236, DTC115EE, DTC115EM3 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 http://onsemi.com 7 mm Ǔ ǒinches MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° MUN2236, MMUN2236L, MUN5236, DTC115EE, DTC115EM3 PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE N D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. e1 DIM A A1 A2 b c D E e e1 L HE 3 E HE 1 2 b e A 0.05 (0.002) 0.30 0.10 1.80 1.15 1.20 0.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.70 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.38 0.56 2.10 2.40 STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR c A2 MIN 0.80 0.00 L A1 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 8 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.008 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.015 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 MUN2236, MMUN2236L, MUN5236, DTC115EE, DTC115EM3 PACKAGE DIMENSIONS SC−75/SOT−416 CASE 463 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. −E− 2 3 b 3 PL 0.20 (0.008) e −D− DIM A A1 b C D E e L HE 1 M D HE C 0.20 (0.008) E STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR A L MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70 A1 SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.071 0.787 0.031 0.508 0.020 1.000 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 9 INCHES NOM MAX 0.031 0.035 0.002 0.004 0.008 0.012 0.006 0.010 0.063 0.067 0.031 0.035 0.04 BSC 0.004 0.006 0.008 0.061 0.063 0.065 MIN 0.027 0.000 0.006 0.004 0.059 0.027 MUN2236, MMUN2236L, MUN5236, DTC115EE, DTC115EM3 PACKAGE DIMENSIONS SOT−723 CASE 631AA ISSUE D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. −X− D b1 A −Y− 3 E 1 2X HE 2 2X e b C 0.08 X Y SIDE VIEW TOP VIEW 3X 1 3X DIM A b b1 C D E e HE L L2 L L2 RECOMMENDED SOLDERING FOOTPRINT* BOTTOM VIEW MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.29 REF 0.15 0.20 0.25 STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR 2X 0.40 2X 0.27 PACKAGE OUTLINE 1.50 3X 0.52 0.36 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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