ONSEMI DTC114TET1G

DTC114EET1 Series
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base−emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SC−75/SOT−416 package which is designed for low power surface
mount applications.
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NPN SILICON
BIAS RESISTOR TRANSISTORS
PIN 3
COLLECTOR
(OUTPUT)
Features
•
•
•
•
•
•
•
PIN 1
BASE
(INPUT)
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC−75/SOT−416 Package Can be Soldered Using Wave or
Reflow
The Modified Gull−Winged Leads Absorb Thermal Stress During
Soldering Eliminating the Possibility of Damage to the Die
Available in 8 mm, 7 inch/3000 Unit Tape & Reel
Pb−Free Packages are Available
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
Collector Current
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Total Device Dissipation,
FR−4 Board (Note 1) @ TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
Total Device Dissipation,
FR−4 Board (Note 2) @ TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
Junction and Storage Temperature Range
Symbol
Value
Unit
200
1.6
mW
mW/°C
600
°C/W
300
2.4
mW
mW/°C
RJA
400
°C/W
TJ, Tstg
−55 to
+150
°C
R2
PIN 2
EMITTER
(GROUND)
MARKING
DIAGRAM
3
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
R1
2
1
SC−75/SOT−416
CASE 463
STYLE 1
xx M
xx = Specific Device Code
M = Date Code
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
PD
RJA
PD
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 × 1.0 Inch Pad
 Semiconductor Components Industries, LLC, 2005
January, 2005 − Rev. 6
1
Publication Order Number:
DTC114EET1/D
DTC114EET1 Series
ORDERING INFORMATION, DEVICE MARKING and RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Package
DTC114EET1
8A
10
10
SC−75/SOT−416
DTC114EET1G
8A
10
10
SC−75/SOT−416
(Pb−Free)
DTC124EET1
8B
22
22
SC−75/SOT−416
DTC124EET1G
8B
22
22
SC−75/SOT−416
(Pb−Free)
DTC144EET1
8C
47
47
SC−75/SOT−416
DTC144EET1G
8C
47
47
SC−75/SOT−416
(Pb−Free)
DTC114YET1
8D
10
47
SC−75/SOT−416
DTC114YET1G
8D
10
47
SC−75/SOT−416
(Pb−Free)
DTC114TET1
94
10
∞
SC−75/SOT−416
DTC114TET1G
94
10
∞
SC−75/SOT−416
(Pb−Free)
DTC143TET1
8F
4.7
∞
SC−75/SOT−416
DTC143TET1G
8F
4.7
∞
SC−75/SOT−416
(Pb−Free)
DTC123EET1
8H
2.2
2.2
SC−75/SOT−416
DTC123EET1G
8H
2.2
2.2
SC−75/SOT−416
(Pb−Free)
DTC143EET1
8J
4.7
4.7
SC−75/SOT−416
DTC143EET1G
8J
4.7
4.7
SC−75/SOT−416
(Pb−Free)
DTC143ZET1
8K
4.7
47
SC−75/SOT−416
DTC143ZET1G
8K
4.7
47
SC−75/SOT−416
(Pb−Free)
DTC124XET1
8L
22
47
SC−75/SOT−416
DTC124XET1G
8L
22
47
SC−75/SOT−416
(Pb−Free)
DTC123JET1
8M
2.2
47
SC−75/SOT−416
DTC123JET1G
8M
2.2
47
SC−75/SOT−416
(Pb−Free)
DTC115EET1
8N
100
100
SC−75/SOT−416
DTC115EET1G
8N
100
100
SC−75/SOT−416
(Pb−Free)
DTC144WET1
8P
47
22
SC−75/SOT−416
Shipping†
3000 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
DTC114EET1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector−Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
−
−
100
nAdc
Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
−
−
500
nAdc
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
2.3
1.5
0.18
0.13
0.2
0.05
0.13
mAdc
Collector−Base Breakdown Voltage (IC = 10 A, IE = 0)
V(BR)CBO
50
−
−
Vdc
Collector−Emitter Breakdown Voltage (Note 3)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
−
Vdc
hFE
35
60
80
80
160
160
8.0
15
80
80
80
80
80
60
100
140
140
350
350
15
30
200
150
140
150
140
−
−
−
−
−
−
−
−
−
−
−
−
−
VCE(sat)
−
−
0.25
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
4.9
−
−
OFF CHARACTERISTICS
DTC114EET1
DTC124EET1
DTC144EET1
DTC114YET1
DTC114TET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
DTC115EET1
DTC144WET1
ON CHARACTERISTICS (Note 3)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
DTC114EET1
DTC124EET1
DTC144EET1
DTC114YET1
DTC114TET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
DTC115EET1
DTC144WET1
Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA) DTC123EET1
(IC = 10 mA, IB = 1 mA) DTC143TET1/DTC114TET1/
DTC143EET1/DTC143ZET1/DTC124XET1
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k)
(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 k)
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 k)
VOL
DTC114EET1
DTC124EET1
DTC114YET1
DTC114TET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
DTC144EET1
DTC115EET1
DTC144WET1
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k)
DTC143TET1
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k)
DTC143ZET1
DTC114TET1
VOH
3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
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3
Vdc
Vdc
Vdc
DTC114EET1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Input Resistor
TC114EET1
DTC124EET1
DTC144EET1
DTC114YET1
DTC114TET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
DTC115EET1
DTC144WET1
Resistor Ratio
DTC114EET1/DTC124EET1/DTC144EET1/
DTC115EET1
DTC114YET1
DTC143TET1/DTC114TET1
DTC123EET1/DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
DTC144WET1D
Symbol
Min
Typ
Max
Unit
R1
7.0
15.4
32.9
7.0
7.0
3.3
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
2.9
6.1
6.1
28.6
2.86
130
61.1
k
0.8
0.17
−
0.8
0.055
0.38
0.038
1.7
1.0
0.21
−
1.0
0.1
0.47
0.047
2.1
1.2
0.25
−
1.2
0.185
0.56
0.056
2.6
R1/R2
PD , POWER DISSIPATION (MILLIWATTS)
250
200
150
100
50
RJA = 600°C/W
0
−50
0
50
100
TA, AMBIENT TEMPERATURE (°C)
150
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
Figure 1. Derating Curve
1.0
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1.0
Figure 2. Normalized Thermal Response
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4
10
100
1000
DTC114EET1 Series
1
1000
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − DTC114EET1
TA=−25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
IC, COLLECTOR CURRENT (mA)
VCE = 10 V
TA=75°C
25°C
−25°C
100
10
50
1
10
IC, COLLECTOR CURRENT (mA)
Figure 3. VCE(sat) versus IC
Figure 4. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
2
1
0
25°C
75°C
f = 1 MHz
IE = 0 V
TA = 25°C
TA=−25°C
10
1
0.1
0.01
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
0.001
50
VO = 5 V
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
10
VO = 0.2 V
TA=−25°C
25°C
75°C
1
0.1
0
10
8
9
Figure 6. Output Current versus Input Voltage
Figure 5. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
4
3
100
20
30
IC, COLLECTOR CURRENT (mA)
40
Figure 7. Input Voltage versus Output Current
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5
50
10
DTC114EET1 Series
1000
1
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − DTC124EET1
IC/IB = 10
25°C
TA=−25°C
0.1
75°C
0.01
0.001
0
20
−25°C
100
1
100
10
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 8. VCE(sat) versus IC
Figure 9. DC Current Gain
4
100
3
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
2
1
75°C
25°C
TA=−25°C
10
1
0.1
0.01
VO = 5 V
0
0
0.001
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 10. Output Capacitance
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=−25°C
10
25°C
75°C
1
0.1
0
10
8
10
Figure 11. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
TA=75°C
25°C
10
50
40
VCE = 10 V
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 12. Input Voltage versus Output
Current
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6
50
DTC114EET1 Series
10
1000
IC/IB = 10
1
25°C
TA=−25°C
0.01
0
25°C
−25°C
10
50
20
40
IC, COLLECTOR CURRENT (mA)
TA=75°C
100
75°C
0.1
VCE = 10 V
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − DTC144EET1
10
IC, COLLECTOR CURRENT (mA)
1
Figure 13. VCE(sat) versus IC
1
100
IC, COLLECTOR CURRENT (mA)
0.4
TA=−25°C
10
1
0.1
0.01
0.2
0
25°C
75°C
0.6
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
VO = 5 V
0.001
50
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
100
VO = 0.2 V
TA=−25°C
10
25°C
75°C
1
0.1
0
10
8
10
Figure 16. Output Current versus Input Voltage
Figure 15. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
Figure 14. DC Current Gain
f = 1 MHz
IE = 0 V
TA = 25°C
0.8
100
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 17. Input Voltage versus Output Current
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7
50
DTC114EET1 Series
1
300
IC/IB = 10
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − DTC114YET1
TA=−25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
25°C
200
−25°C
150
100
50
0
80
TA=75°C
VCE = 10
250
2
1
4
6
Figure 18. VCE(sat) versus IC
100
f = 1 MHz
lE = 0 V
TA = 25°C
3
TA=75°C
IC, COLLECTOR CURRENT (mA)
3.5
2.5
2
1.5
1
0.5
0
2
4
6 8 10 15 20 25 30 35
VR, REVERSE BIAS VOLTAGE (VOLTS)
40
45
25°C
−25°C
10
VO = 5 V
1
50
Figure 20. Output Capacitance
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=−25°C
25°C
75°C
1
0.1
0
10
8
Figure 21. Output Current versus Input Voltage
10
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
90 100
Figure 19. DC Current Gain
4
0
8 10 15 20 40 50 60 70 80
IC, COLLECTOR CURRENT (mA)
20
30
IC, COLLECTOR CURRENT (mA)
40
Figure 22. Input Voltage versus Output Current
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8
50
10
DTC114EET1 Series
TYPICAL APPLICATIONS FOR NPN BRTs
+12 V
ISOLATED
LOAD
FROM P OR
OTHER LOGIC
Figure 23. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
+12 V
VCC
OUT
IN
LOAD
Figure 24. Open Collector Inverter:
Inverts the Input Signal
Figure 25. Inexpensive, Unregulated Current Source
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9
DTC114EET1 Series
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463−01
ISSUE C
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
−A−
S
2
3
D 3 PL
0.20 (0.008)
DIM
A
B
C
D
G
H
J
K
L
S
G −B−
1
M
B
0.20 (0.008) A
K
J
INCHES
MIN
MAX
0.028 0.035
0.055 0.071
0.024 0.035
0.006 0.012
0.039 BSC
−−− 0.004
0.004 0.010
0.057 0.069
0.004 0.008
0.020 BSC
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
C
L
MILLIMETERS
MIN
MAX
0.70
0.90
1.40
1.80
0.60
0.90
0.15
0.30
1.00 BSC
−−−
0.10
0.10
0.25
1.45
1.75
0.10
0.20
0.50 BSC
H
SOLDERING FOOTPRINT*
0.53
0.020
1.10
0.043
0.53
0.020
0.50
0.020
SCALE 10:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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10
For additional information, please contact your
local Sales Representative.
DTC114EET1/D