2N5655G, 2N5657G Plastic NPN Silicon High-Voltage Power Transistors These devices are designed for use in line−operated equipment such as audio output amplifiers; low−current, high−voltage converters; and AC line relays. http://onsemi.com 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250−350 VOLTS, 20 WATTS Features • Excellent DC Current Gain • High Current−Gain − Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant* COLLECTOR 2, 4 MAXIMUM RATINGS (Note 1) Rating Collector−Emitter Voltage 2N5655G 2N5657G Symbol Value Unit VCEO Vdc Collector−Base Voltage 2N5655G 2N5657G VCB Emitter−Base Voltage VEB 6.0 Vdc IC 0.5 Adc ICM 1.0 Adc Base Current IB 1.0 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 20 0.16 W W/°C – 65 to + 150 °C/W Collector Current − Continuous Collector Current − Peak Operating and Storage Junction Temperature Range 3 BASE 250 350 Vdc 1 EMITTER 275 375 TJ, Tstg TO−225 CASE 77−09 STYLE 1 1 2 3 MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Indicates JEDEC registered data. YWW 2 N565xG THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 6.25 °C/W Y WW 2N565x G = Year = Work Week = Device Code x = 5 or 7 = Pb−Free Package ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 December, 2013 − Rev. 12 1 Device Package Shipping 2N5655G TO−225 (Pb−Free) 500 Units / Bulk 2N5657G TO−225 (Pb−Free) 500 Units / Bulk Publication Order Number: 2N5655/D 2N5655G, 2N5657G ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 100 mAdc (inductive), L = 50 mH) 2N5655G 2N5657G VCEO(sus) Collector−Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) 2N5655G 2N5657G V(BR)CEO Vdc 250 350 Vdc 250 350 Collector Cutoff Current (VCE = 150 Vdc, IB = 0) 2N5655G (VCE = 250 Vdc, IB = 0) 2N5657G ICEO Collector Cutoff Current (VCE = 250 Vdc, VEB(off) = 1.5 Vdc) 2N5655G (VCE = 350 Vdc, VEB(off) = 1.5 Vdc) 2N5657G (VCE = 150 Vdc, VEB(off) = 1.5 Vdc, TC = 100_C) 2N5655G (VCE = 250 Vdc, VEB(off) = 1.5 Vdc, TC = 100_C) 2N5657G ICEX Collector Cutoff Current (VCB = 275 Vdc, IE = 0) 2N5655G (VCB = 375 Vdc, IE = 0) 2N5657G ICBO Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) IEBO − − − − mAdc − 0.1 − 0.1 mAdc − 0.1 − 0.1 − 1.0 − 1.0 mAdc − 10 − 10 − 10 25 30 15 5.0 − 250 − − − − − 1.0 2.5 10 − 1.0 10 − − 25 20 − mAdc ON CHARACTERISTICS DC Current Gain (Note 3) (IC = 50 mAdc, VCE = 10 Vdc) (IC = 100 mAdc, VCE = 10 Vdc) (IC = 250 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) hFE Collector−Emitter Saturation Voltage (Note 3) (IC = 100 mAdc, IB = 10 mAdc) (IC = 250 mAdc, IB = 25 mAdc) (IC = 500 mAdc, IB = 100 mAdc) − VCE(sat) Base−Emitter Voltage (IC = 100 mAdc, VCE = 10 Vdc) (Note 3) Vdc VBE Vdc DYNAMIC CHARACTERISTICS fT Current−Gain − Bandwidth Product (IC = 50 mAdc, VCE = 10 Vdc, f = 10 MHz) (Note 4) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz) Cob Small−Signal Current Gain (IC = 100 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe MHz pF − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Indicates JEDEC registered data for 2N5655 Series. 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity. http://onsemi.com 2 2N5655G, 2N5657G PD, POWER DISSIPATION (WATTS) 40 30 50 mH X 20 200 TO SCOPE Hg RELAY + 10 + 6.0 V 50 V 300 0 - Y 25 50 75 100 TC, CASE TEMPERATURE (°C) 1.0 150 125 Figure 1. Power Derating Figure 2. Sustaining Voltage Test Circuit Safe Area Limits are indicated by Figures 3 and 4. Both limits are applicable and must be observed. 1.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 3 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) ≤ 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. IC, COLLECTOR CURRENT (AMP) 10 ms 0.5 500 ms TJ = 150°C 0.2 1.0 ms d c Second Breakdown Limit Thermal Limit @ TC = 25°C Bonding Wire Limit Curves apply below rated VCEO 2N5655 0.1 0.05 0.02 0.01 2N5657 30 20 40 60 100 200 300 400 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 600 Figure 3. Active−Region Safe Operating Area 300 hFE , DC CURRENT GAIN 200 100 70 VCE = 10 V VCE = 2.0 V TJ = +150°C +100°C 50 + 25°C 30 20 10 1.0 -55°C 2.0 3.0 5.0 7.0 10 20 30 50 IC, COLLECTOR CURRENT (mA) Figure 4. Current Gain http://onsemi.com 3 70 100 200 300 500 2N5655G, 2N5657G 1.0 V, VOLTAGE (VOLTS) 0.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 10 V 0.6 0.4 VCE(sat) @ IC/IB = 10 0.2 TJ = + 25°C IC/IB = 5.0 0 10 20 30 50 100 200 300 IC, COLLECTOR CURRENT (mA) 500 Figure 5. “On” Voltages 300 TJ = + 25°C 200 C, CAPACITANCE (pF) Cib 100 70 50 30 20 10 0.1 Cob 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 6. Capacitance 10 10 2.0 t, TIME (s) μ 1.0 IC/IB = 10 VCC = 300 V, VBE(off) = 2.0 V (2N5657, only) VCC = 100 V, VBE(off) = 0 V 0.5 0.2 IC/IB = 10 5.0 t, TIME (s) μ tr 5.0 td ts 2.0 tf 1.0 VCC = 100 V 0.5 0.1 0.05 0.01 1.0 VCC = 300 V (Type 2N5657, only) 0.2 0.02 2.0 5.0 10 20 50 100 IC, COLLECTOR CURRENT (mA) 200 0.1 1.0 500 Figure 7. Turn−On Time 2.0 5.0 10 20 50 100 IC, COLLECTOR CURRENT (mA) Figure 8. Turn−Off Time http://onsemi.com 4 200 500 2N5655G, 2N5657G PACKAGE DIMENSIONS TO−225 CASE 77−09 ISSUE AC 4 3 2 1 1 2 3 FRONT VIEW BACK VIEW NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. NUMBER AND SHAPE OF LUGS OPTIONAL. E A1 Q A PIN 4 BACKSIDE TAB D P 1 2 3 L1 L 2X DIM A A1 b b2 c D E e L L1 P Q MILLIMETERS MIN MAX 2.40 3.00 1.00 1.50 0.60 0.90 0.51 0.88 0.39 0.63 10.60 11.10 7.40 7.80 2.04 2.54 14.50 16.63 1.27 2.54 2.90 3.30 3.80 4.20 STYLE 1: PIN 1. EMITTER 2., 4. COLLECTOR 3. BASE b2 2X e b FRONT VIEW c SIDE VIEW ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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