2N5655, 2N5657 Plastic NPN Silicon High−Voltage Power Transistor These devices are designed for use in line−operated equipment such as audio output amplifiers; low−current, high−voltage converters; and AC line relays. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250−350 VOLTS, 20 WATTS Features • Excellent DC Current Gain − • • http://onsemi.com hFE = 30−250 @ IC = 100 mAdc Current−Gain − Bandwidth Product − fT = 10 MHz (Min) @ IC = 50 mAdc Pb−Free Packages are Available* ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎ MAXIMUM RATINGS (Note 1) Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Symbol 2N5655 2N5657 Unit VCEO 250 350 Vdc VCB 275 375 Vdc VEB 6.0 Vdc IC 0.5 1.0 Adc Base Current IB 1.0 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 20 0.16 W W/°C TJ, Tstg – 65 to + 150 °C/W Symbol Max Unit qJC 6.25 °C/W Collector Current − Continuous Peak Operating and Storage Junction Temperature Range TO−225AA CASE 77−09 STYLE 1 MARKING DIAGRAM YWW 2 N565xG THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Y WW 2N565x Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC registered data. G = Year = Work Week = Device Code x = 5 or 7 = Pb−Free Package ORDERING INFORMATION Device 2N5655 2N5655G 2N5657 2N5657G Package Shipping TO−225 500 Units / Bulk TO−225 (Pb−Free) 500 Units / Bulk TO−225 500 Units / Bulk TO−225 (Pb−Free) 500 Units / Bulk *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 October, 2006 − Rev. 9 1 Publication Order Number: 2N5655/D 2N5655, 2N5657 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 100 mAdc (inductive), L = 50 mH) 2N5655 2N5657 VCEO(sus) 250 350 − − Vdc Collector−Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) 2N5655 2N5657 V(BR)CEO 250 350 − − Vdc Collector Cutoff Current (VCE = 150 Vdc, IB = 0) (VCE = 250 Vdc, IB = 0) 2N5655 2N5657 − − 0.1 0.1 Collector Cutoff Current (VCE = 250 Vdc, VEB(off) = 1.5 Vdc) (VCE = 350 Vdc, VEB(off) = 1.5 Vdc) (VCE = 150 Vdc, VEB(off) = 1.5 Vdc, TC = 100_C) (VCE = 250 Vdc, VEB(off) = 1.5 Vdc, TC = 100_C) 2N5655 2N5657 2N5655 2N5657 − − − − 0.1 0.1 1.0 1.0 Collector Cutoff Current (VCB = 275 Vdc, IE = 0) (VCB = 375 Vdc, IE = 0) 2N5655 2N5657 − − 10 10 − 10 25 30 15 5.0 − 250 − − − − − 1.0 2.5 10 VBE − 1.0 Vdc fT 10 − MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz) Cob − 25 pF Small−Signal Current Gain (IC = 100 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 20 − − ICEO mAdc ICEX mAdc mAdc ICBO Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) IEBO mAdc ON CHARACTERISTICS DC Current Gain (Note 3) (IC = 50 mAdc, VCE = 10 Vdc) (IC = 100 mAdc, VCE = 10 Vdc) (IC = 250 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) hFE Collector−Emitter Saturation Voltage (Note 3) (IC = 100 mAdc, IB = 10 mAdc) (IC = 250 mAdc, IB = 25 mAdc) (IC = 500 mAdc, IB = 100 mAdc) − VCE(sat) Base−Emitter Voltage (IC = 100 mAdc, VCE = 10 Vdc) (Note 3) Vdc DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 50 mAdc, VCE = 10 Vdc, f = 10 MHz) (Note 4) Indicates JEDEC registered data for 2N5655 Series. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. fT is defined as the frequency at which |hfe| extrapolates to unity. 40 PD, POWER DISSIPATION (WATTS) 2. 3. 4. 30 50 mH X 20 200 TO SCOPE Hg RELAY + 10 25 50 V Y 300 0 + 6.0 V 50 75 100 TC, CASE TEMPERATURE (°C) 125 − 1.0 150 Figure 1. Power Derating Figure 2. Sustaining Voltage Test Circuit Safe Area Limits are indicated by Figures 3 and 4. Both limits are applicable and must be observed. http://onsemi.com 2 2N5655, 2N5657 1.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C − V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 3 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. IC, COLLECTOR CURRENT (AMP) 10 ms 0.5 500 ms TJ = 150°C 0.2 1.0 ms dc Second Breakdown Limit Thermal Limit @ TC = 25°C Bonding Wire Limit Curves apply below rated VCEO 2N5655 0.1 0.05 0.02 0.01 2N5657 20 30 40 60 100 200 300 400 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 600 Figure 3. Active−Region Safe Operating Area 300 100 70 VCE = 10 V VCE = 2.0 V TJ = +150°C +100°C 50 + 25°C 30 20 10 1.0 −55 °C 2.0 3.0 5.0 7.0 10 20 30 50 IC, COLLECTOR CURRENT (mA) 70 100 Figure 4. Current Gain 1.0 0.8 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN 200 VBE(sat) @ IC/IB = 10 VBE @ VCE = 10 V 0.6 0.4 VCE(sat) @ IC/IB = 10 0.2 TJ = + 25°C IC/IB = 5.0 0 10 20 30 50 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 5. “On” Voltages http://onsemi.com 3 500 200 300 500 2N5655, 2N5657 300 TJ = + 25°C 200 C, CAPACITANCE (pF) Cib 100 70 50 30 20 10 0.1 Cob 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 6. Capacitance 10 IC/IB = 10 VCC = 300 V, VBE(off) = 2.0 V (2N5657, only) VCC = 100 V, VBE(off) = 0 V tr 5.0 2.0 t, TIME (s) μ 1.0 0.5 0.2 td 0.1 0.05 0.02 0.01 1.0 2.0 5.0 10 20 50 100 IC, COLLECTOR CURRENT (mA) 200 500 Figure 7. Turn−On Time 10 IC/IB = 10 t, TIME (s) μ 5.0 ts 2.0 tf 1.0 VCC = 100 V 0.5 VCC = 300 V (Type 2N5657, only) 0.2 0.1 1.0 2.0 5.0 10 20 50 100 IC, COLLECTOR CURRENT (mA) Figure 8. Turn−Off Time http://onsemi.com 4 200 500 2N5655, 2N5657 PACKAGE DIMENSIONS TO−225 CASE 77−09 ISSUE Z −B− U F Q −A− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077−01 THRU −08 OBSOLETE, NEW STANDARD 077−09. C M 1 2 3 H DIM A B C D F G H J K M Q R S U V K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B M INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5_ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 −−− MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 −−− STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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