Inchange Semiconductor Product Specification 2N5655 2N5656 2N5657 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・High breakdown voltage APPLICATIONS ・For use in line-operated equipment such as audio output amplifiers; low-current ,high-voltage converters; and AC line relays PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base 导体 半 电 R O T UC Absolute maximum ratings(Ta=25℃) 固 SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS 2N5655 Collector-base voltage Collector-emitter voltage EMIC Open emitter GE S N A H C IN 2N5656 2N5657 2N5655 2N5656 Open base 2N5657 Emitter-base voltage OND VALUE UNIT 275 325 V 375 250 300 V 350 Open collector 6 V IC Collector current 0.5 A ICM Collector current-Peak 1.0 A IB Base current 0.25 A PD Total power dissipation 20 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ VALUE UNIT 6.25 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N5655 2N5656 2N5657 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N5655 VCEO(SUS) Collector-emitter sustaining voltage 2N5656 MIN TYP. MAX UNIT 250 IC=0.1A; IB=0;L=50mH 2N5657 V 300 350 VCEsat-1 Collector-emitter saturation voltage IC=100mA ;IB=10mA 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=250mA ;IB=25mA 2.5 V VCEsat-3 Collector-emitter saturation voltage IC=500mA ;IB=100mA 10 V Base-emitter on voltage IC=100mA ; VCE=10V 1.0 V 0.1 mA VBE ICEO Collector cut-off current 2N5655 VCE=150V; IB=0 2N5656 VCE=200V; IB=0 体 半导 ICBO 2N5657 VCE=250V; IB=0 2N5655 VCB=275V; IE=0 2N5656 VCB=325V; IE=0 2N5657 N A H INC VCB=375V; IE=0 固电 Collector cut-off current R O T UC D N O IC 10 μA VCE= Rated VCEO; VBE(off)=1.5V TC=100℃ 0.1 1.0 mA 10 μA M E S GE ICEX Collector cut-off current IEBO Emitter cut-off current VEB=6V; IC=0 hFE-1 DC current gain IC=50mA ; VCE=10V 25 hFE-2 DC current gain IC=100mA ; VCE=10V 30 hFE-3 DC current gain IC=250mA ; VCE=10V 15 hFE-4 DC current gain IC=500mA ; VCE=10V 5 fT Transition frequency IC=50mA ; VCE=10V;f=10MHz 10 COB Output capacitance f=100kHz ; VCB=10V;IE=0 2 250 MHz 25 pF Inchange Semiconductor Product Specification 2N5655 2N5656 2N5657 Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3