ISC 2N5655

Inchange Semiconductor
Product Specification
2N5655 2N5656 2N5657
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-126 package
・High breakdown voltage
APPLICATIONS
・For use in line-operated equipment
such as audio output amplifiers;
low-current ,high-voltage converters;
and AC line relays
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
导体
半
电
R
O
T
UC
Absolute maximum ratings(Ta=25℃)
固
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
CONDITIONS
2N5655
Collector-base voltage
Collector-emitter voltage
EMIC
Open emitter
GE S
N
A
H
C
IN
2N5656
2N5657
2N5655
2N5656
Open base
2N5657
Emitter-base voltage
OND
VALUE
UNIT
275
325
V
375
250
300
V
350
Open collector
6
V
IC
Collector current
0.5
A
ICM
Collector current-Peak
1.0
A
IB
Base current
0.25
A
PD
Total power dissipation
20
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
VALUE
UNIT
6.25
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2N5655 2N5656 2N5657
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N5655
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5656
MIN
TYP.
MAX
UNIT
250
IC=0.1A; IB=0;L=50mH
2N5657
V
300
350
VCEsat-1
Collector-emitter saturation voltage
IC=100mA ;IB=10mA
1.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=250mA ;IB=25mA
2.5
V
VCEsat-3
Collector-emitter saturation voltage
IC=500mA ;IB=100mA
10
V
Base-emitter on voltage
IC=100mA ; VCE=10V
1.0
V
0.1
mA
VBE
ICEO
Collector cut-off current
2N5655
VCE=150V; IB=0
2N5656
VCE=200V; IB=0
体
半导
ICBO
2N5657
VCE=250V; IB=0
2N5655
VCB=275V; IE=0
2N5656
VCB=325V; IE=0
2N5657
N
A
H
INC
VCB=375V; IE=0
固电
Collector cut-off current
R
O
T
UC
D
N
O
IC
10
μA
VCE= Rated VCEO; VBE(off)=1.5V
TC=100℃
0.1
1.0
mA
10
μA
M
E
S
GE
ICEX
Collector cut-off current
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE-1
DC current gain
IC=50mA ; VCE=10V
25
hFE-2
DC current gain
IC=100mA ; VCE=10V
30
hFE-3
DC current gain
IC=250mA ; VCE=10V
15
hFE-4
DC current gain
IC=500mA ; VCE=10V
5
fT
Transition frequency
IC=50mA ; VCE=10V;f=10MHz
10
COB
Output capacitance
f=100kHz ; VCB=10V;IE=0
2
250
MHz
25
pF
Inchange Semiconductor
Product Specification
2N5655 2N5656 2N5657
Silicon NPN Power Transistors
PACKAGE OUTLINE
导体
半
电
固
D
N
O
IC
R
O
T
UC
M
E
S
GE
N
A
H
INC
Fig.2 Outline dimensions
3