NGTB25N120FL3WG IGBT - Ultra Field Stop This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. www.onsemi.com Features • • • • • 25 A, 1200 V VCEsat = 1.7 V Eoff = 0.7 mJ Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching These are Pb−Free Devices C Typical Applications • Solar Inverter • Uninterruptible Power Inverter Supplies (UPS) • Welding G E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage VCES 1200 V Collector current @ TC = 25°C @ TC = 100°C IC Pulsed collector current, Tpulse limited by TJmax ICM Diode forward current @ TC = 25°C @ TC = 100°C IF Diode pulsed current, Tpulse limited by TJmax IFM 100 A Gate−emitter voltage Transient gate−emitter voltage (Tpulse = 5 ms, D < 0.10) VGE $20 ±30 V Power Dissipation @ TC = 25°C @ TC = 100°C PD Operating junction temperature range TJ −55 to +175 °C Storage temperature range Tstg −55 to +175 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C A 100 25 100 A G C TO−247 CASE 340AL E A 100 25 MARKING DIAGRAM 25N120FL3 AYWWG W 349 174 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NGTB25N120FL3WG © Semiconductor Components Industries, LLC, 2016 May, 2016 − Rev. 1 1 Package Shipping TO−247 30 Units / Rail (Pb−Free) Publication Order Number: NGTB25N120FL3W/D NGTB25N120FL3WG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.43 °C/W Thermal resistance junction−to−case, for Diode RqJC 0.78 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 1200 − − V VGE = 15 V, IC = 25 A VGE = 15 V, IC = 25 A, TJ = 175°C VCEsat − − 1.70 2.40 1.95 − V STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage VGE = VCE, IC = 400 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 1200 V VGE = 0 V, VCE = 1200 V, TJ = 175°C ICES − − − 0.4 0.1 2 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 200 nA Cies − 3085 − pF Coes − 94 − Cres − 52 − Gate charge total Qg − 136 − Gate to emitter charge Qge − 29 − Qgc − 67 − td(on) − 15 − tr − 21 − td(off) − 109 − tf − 131 − Eon − 1.0 − Turn−off switching loss Eoff − 0.7 − Total switching loss Ets − 1.7 − Turn−on delay time td(on) − 15 − tr − 21 − td(off) − 113 − Gate−emitter threshold voltage Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance VCE = 600 V, IC = 25 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 25°C VCC = 600 V, IC = 25 A Rg = 10 W VGE = 15 V Rise time Turn−off delay time Fall time TJ = 175°C VCC = 600 V, IC = 25 A Rg = 10 W VGE = 15 V ns mJ ns tf − 169 − Eon − 1.0 − Turn−off switching loss Eoff − 0.9 − Total switching loss Ets − 1.9 − VGE = 0 V, IF = 25 A VGE = 0 V, IF = 25 A TJ = 175°C VF − − 3.0 2.8 3.4 − V Reverse recovery time trr − 90 − ns Reverse recovery charge TJ = 25°C IF = 25 A, VR = 600 V diF/dt = 500 A/ms Qrr − 0.62 − mc Irrm − 12 − A dIrrm/dt − −256 − A/ms Turn−on switching loss mJ DIODE CHARACTERISTICS Forward voltage Reverse recovery current Diode peak rate of fall of reverse recovery current during tb www.onsemi.com 2 NGTB25N120FL3WG ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit trr − 114 − ns DIODE CHARACTERISTICS Reverse recovery time Reverse recovery charge Reverse recovery current Diode peak rate of fall of reverse recovery current during tb TJ = 125°C IF = 25 A, VR = 600 V diF/dt = 500 A/ms Qrr − 1.17 − mc Irrm − 17 − A dIrrm/dt − −296 − A/ms Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 NGTB25N120FL3WG TYPICAL CHARACTERISTICS 100 100 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) VGE = 20 V − 13 V VGE = 20 V − 13 V TJ = 25°C 80 11 V 60 40 10 V 20 9V 7V 8V 0 0 1 2 3 4 5 6 10 V 40 9V 20 8V 7V 0 1 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Output Characteristics Figure 2. Output Characteristics 100 IC, COLLECTOR CURRENT (A) 11 V 60 40 10 V 20 0 1 2 3 4 5 9V 7 V and 8 V 8 6 7 80 TJ = 175°C 11 V 60 10 V 40 9V 20 8V 7V 0 0 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Output Characteristics 100 TJ = 25°C TJ = 175°C 80 60 40 20 0 2 4 6 8 10 12 14 16 8 3.5 IC = 50 A 3.0 2.5 IC = 25 A 2.0 IC = 10 A 1.5 1.0 −75 −50 −25 0 25 50 75 100 125 150 175 200 VGE, GATE−EMITTER VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 5. Typical Transfer Characteristics Figure 6. VCE(sat) vs. TJ www.onsemi.com 4 8 VGE = 20 V − 13 V TJ = −55°C 80 0 2 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE = 20 V − 13 V 0 11 V 0 VCE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) TJ = 150°C 60 8 7 100 IC, COLLECTOR CURRENT (A) 80 NGTB25N120FL3WG TYPICAL CHARACTERISTICS 10,000 100 90 IF, FORWARD CURRENT (A) CAPACITANCE (pF) Cies TJ = 25°C 1000 100 Coes Cres 60 50 40 30 TJ = 175°C 20 TJ = 25°C 0 0 10 30 20 40 50 60 70 80 90 100 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE, COLLECTOR−EMITTER VOLTAGE (V) VF, FORWARD VOLTAGE (V) Figure 7. Typical Capacitance Figure 8. Diode Forward Characteristics 16 1.7 14 1.5 SWITCHING LOSS (mJ) VGE, GATE−EMITTER VOLTAGE (V) 70 10 10 12 10 8 6 VCE = 600 V VGE = 15 V IC = 25 A 4 2 VCE = 600 V VGE = 15 V IC = 25 A Rg = 10 W 1.3 Eon 1.1 Eoff 0.9 0.7 0.5 0 0.3 0 40 20 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 180 200 QG, GATE CHARGE (nC) TJ, JUNCTION TEMPERATURE (°C) Figure 9. Typical Gate Charge Figure 10. Switching Loss vs. Temperature 6 SWITCHING LOSS (mJ) 1000 SWITCHING TIME (ns) 80 tf 100 td(off) tr td(on) 10 VCE = 600 V VGE = 15 V IC = 25 A Rg = 10 W 1 0 20 40 VCE = 600 V VGE = 15 V TJ = 175°C Rg = 10 W 5 Eon 4 Eoff 3 2 1 0 60 80 100 120 140 160 180 200 10 20 30 40 50 60 70 TJ, JUNCTION TEMPERATURE (°C) IC, COLLECTOR CURRENT (A) Figure 11. Switching Time vs. Temperature Figure 12. Switching Loss vs. IC www.onsemi.com 5 80 90 NGTB25N120FL3WG TYPICAL CHARACTERISTICS 6 tf 100 td(off) tr td(on) 10 VCE = 600 V VGE = 15 V TJ = 175°C Rg = 10 W 1 10 20 3 2 Eoff 1 0 30 40 50 60 70 80 90 0 10 20 30 40 50 60 IC, COLLECTOR CURRENT (A) RG, GATE RESISTOR (W) Figure 13. Switching Time vs. IC Figure 14. Switching Loss vs. RG 70 2.5 VCE = 600 V VGE = 15 V TJ = 175°C IC = 25 A td(off) tf tr 100 td(on) VGE = 15 V TJ = 175°C IC = 25 A Rg = 10 W 2.0 SWITCHING LOSS (mJ) SWITCHING TIME (ns) Eon 4 1000 Eon 1.5 Eoff 1.0 0.5 0 10 0 10 20 30 40 50 60 350 400 70 500 550 600 650 700 750 800 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Time vs. RG Figure 16. Switching Loss vs. VCE 1000 IC, COLLECTOR CURRENT (A) VGE = 15 V TJ = 175°C IC = 25 A Rg = 10 W tf td(off) 100 tr td(on) 10 100 dc operation 10 50 ms 450 500 550 600 650 700 750 800 100 ms Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 1 0.1 350 400 450 RG, GATE RESISTOR (W) 1000 SWITCHING TIME (ns) VCE = 600 V VGE = 15 V TJ = 175°C IC = 25 A 5 SWITCHING LOSS (mJ) SWITCHING TIME (ns) 1000 1 10 1 ms 100 1K VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Switching Time vs. VCE Figure 18. Safe Operating Area www.onsemi.com 6 10K NGTB25N120FL3WG TYPICAL CHARACTERISTICS 300 trr, REVERSE RECOVERY TIME (ns) IC, COLLECTOR CURRENT (A) 1000 100 10 VGE = 15 V, TC = 175°C 1 10 100 TJ = 175°C, IF = 25 A 200 150 100 TJ = 25°C, IF = 25 A 50 1K 10K 100 300 500 700 900 diF/dt, DIODE CURRENT SLOPE (A/ms) Figure 19. Reverse Bias Safe Operating Area Figure 20. trr vs. diF/dt Irm, REVERSE RECOVERY CURRENT (A) VCE, COLLECTOR−EMITTER VOLTAGE (V) 2.5 TJ = 175°C, IF = 25 A 2.0 1.5 1.0 TJ = 25°C, IF = 25 A 0.5 VR = 400 V 100 300 500 700 900 1100 VR = 400 V 40 TJ = 175°C, IF = 25 A 30 20 TJ = 25°C, IF = 25 A 10 0 100 300 500 700 900 diF/dt, DIODE CURRENT SLOPE (A/ms) Figure 21. Qrr vs. diF/dt Figure 22. Irm vs. diF/dt 4.5 4.0 IC = 50 A 3.5 IC = 25 A 3.0 2.5 IC = 10 A 2.0 1.5 1.0 −75 −50 −25 0 25 75 100 125 150 175 200 50 TJ, JUNCTION TEMPERATURE (°C) Figure 23. VF vs. TJ www.onsemi.com 7 1100 50 diF/dt, DIODE CURRENT SLOPE (A/ms) VF, FORWARD VOLTAGE (V) Qrr, REVERSE RECOVERY CHARGE (mC) 250 0 1 0 VR = 400 V 1100 NGTB25N120FL3WG TYPICAL CHARACTERISTICS 120 Ramp, TC = 110°C 100 Ramp, TC = 80°C Square, TC = 110°C Ipk (A) 80 60 Square, TC = 80°C 40 VCE = 600 V, RG = 10 W, VGE = 15 V 20 0 0.01 0.1 1 10 100 1000 FREQUENCY (kHz) Figure 24. Collector Current vs. Switching Frequency R(t), SQUARE−WAVE PEAK (°C/W) 1 RqJC = 0.43 50% Duty Cycle 0.1 20% 10% 5% 0.01 2% Junction R1 R2 Rn C1 C2 Cn 0.001 Ri (°C/W) Ci (J/W) 0.0096 0.0105 0.1168 0.0027 0.0275 0.0363 0.1537 0.0206 0.1167 0.0857 0.0095 3.3131 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.0001 0.000001 Case 0.00001 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 25. IGBT Transient Thermal Impedance R(t), SQUARE−WAVE PEAK (°C/W) 1 50% Duty Cycle RqJC = 0.78 20% 0.1 10% Junction R1 R2 Rn C1 C2 Cn Case 5% 2% Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.01 0.000001 Ri (°C/W) Ci (J/W) 0.000058 0.000427 0.001260 0.001363 0.003395 0.022881 0.052571 0.078312 0.128193 1.422617 0.017265 0.023397 0.025095 0.073345 0.093146 0.043705 0.060153 0.127694 0.246682 0.070293 0.00001 0.0001 0.001 PULSE TIME (sec) 0.01 Figure 26. Diode Transient Thermal Impedance www.onsemi.com 8 0.1 1 NGTB25N120FL3WG Figure 27. Test Circuit for Switching Characteristics Figure 28. Definition of Turn On Waveform www.onsemi.com 9 NGTB25N120FL3WG Figure 29. Definition of Turn Off Waveform www.onsemi.com 10 NGTB25N120FL3WG PACKAGE DIMENSIONS TO−247 CASE 340AL ISSUE A B A NOTE 4 E SEATING PLANE 0.635 M P A Q E2 D S NOTE 3 1 2 4 DIM A A1 b b2 b4 c D E E2 e L L1 P Q S 3 L1 NOTE 5 L 2X b2 c b4 3X e A1 b 0.25 NOTE 7 M B A M NOTE 6 E2/2 NOTE 4 B A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. SLOT REQUIRED, NOTCH MAY BE ROUNDED. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. 6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91. 7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1. M MILLIMETERS MIN MAX 4.70 5.30 2.20 2.60 1.00 1.40 1.65 2.35 2.60 3.40 0.40 0.80 20.30 21.40 15.50 16.25 4.32 5.49 5.45 BSC 19.80 20.80 3.50 4.50 3.55 3.65 5.40 6.20 6.15 BSC ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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