NGTB30N120IHR D

NGTB30N120IHRWG
IGBT with Monolithic Free
Wheeling Diode
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on−state voltage and minimal switching loss. The IGBT is
well suited for resonant or soft switching applications.
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30 A, 1200 V
VCEsat = 2.20 V
Eoff = 0.70 mJ
Features
•
•
•
•
•
Extremely Efficient Trench with Fieldstop Technology
Low Switching Loss Reduces System Power Dissipation
Optimized for Low Losses IH Cooker Application
Reliable and Cost Effective Single Die Solution
These are Pb−Free Devices
C
Typical Applications
• Inductive Heating
• Consumer Appliances
• Soft Switching
G
E
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Unit
Collector−emitter voltage
Rating
VCES
1200
V
Collector current
@ TC = 25°C
@ TC = 100°C
IC
Pulsed collector current, Tpulse
limited by TJmax, 10 ms pulse,
VGE = 15 V
ICM
Diode forward current
@ TC = 25°C
@ TC = 100°C
IF
Diode pulsed current, Tpulse limited
by TJmax 10 ms pulse,
VGE = 0 V
IFM
120
A
Gate−emitter voltage
Transient Gate−emitter voltage
(Tpulse = 5 ms, D < 0.10)
VGE
$20
$25
V
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
Operating junction temperature
range
TJ
−40 to +175
°C
Storage temperature range
Tstg
−55 to +175
°C
Lead temperature for soldering, 1/8”
from case for 5 seconds
TSLD
260
°C
A
60
30
G
120
A
A
60
30
October, 2013 − Rev. 1
TO−247
CASE 340AL
E
MARKING DIAGRAM
30N120IHR
AYWWG
W
384
192
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2013
C
1
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
NGTB30N120IHRWG
TO−247
(Pb−Free)
30 Units / Rail
Publication Order Number:
NGTB30N120IHR/D
NGTB30N120IHRWG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction−to−case
Rating
RqJC
0.39
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
1200
−
−
V
VGE = 15 V, IC = 30 A
VGE = 15 V, IC = 30 A, TJ = 175°C
VCEsat
−
−
2.20
2.40
2.50
−
V
VGE = VCE, IC = 250 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 175°C
ICES
−
−
−
−
0.2
2.8
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V, VCE = 0 V
IGES
−
−
100
nA
Cies
−
5320
−
pF
Coes
−
124
−
Cres
−
100
−
Qg
−
225
−
Qge
−
36
−
Qgc
−
98
−
TJ = 25°C
VCC = 600 V, IC = 30 A
Rg = 10 W
VGE = 0 V/ 15V
td(off)
−
230
−
tf
−
133
−
Eoff
−
0.70
−
mJ
TJ = 150°C
VCC = 600 V, IC = 30 A
Rg = 10 W
VGE = 0 V/ 15V
td(off)
−
250
−
ns
tf
−
210
−
Eoff
−
1.55
−
mJ
VGE = 0 V, IF = 30 A
VGE = 0 V, IF = 30 A, TJ = 175°C
VF
−
−
1.90
2.90
2.35
−
V
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
VCE = 600 V, IC = 30 A, VGE = 15 V
Gate to collector charge
nC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−off delay time
Fall time
Turn−off switching loss
Turn−off delay time
Fall time
Turn−off switching loss
ns
DIODE CHARACTERISTIC
Forward voltage
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2
NGTB30N120IHRWG
TYPICAL CHARACTERISTICS
250
TJ = 25°C
VGE = 20 to 15 V
11 V
150
10 V
100
9V
50
8V
1
2
3
4
6
5
10 V
100
9V
50
8V
7V
0
8
0
1
2
3
4
6
5
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
200
11 V
150
10 V
100
9V
50
7V
8V
0
1
2
3
4
5
6
VCE = 20 V
140
TJ = 25°C
120
TJ = 150°C
100
80
60
40
20
0
7
8
0
1
2
3
4
5
6
7
8
9 10
11 12 13
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
3.50
10,000
Cies
IC = 60 A
3.00
IC = 30 A
2.50
2.00
IC = 15 A
1.50
1.00
1000
100
Coes
Cres
0.50
0.00
−75 −50 −25 0
10
25
50
75
8
160
TJ = −40°C
VGE = 20 to 13 V
0
11 V
150
VCE, COLLECTOR−EMITTER VOLTAGE (V)
250
IC, COLLECTOR CURRENT (A)
7
VGE = 20 to 15 V
13 V
7V
0
TJ = 150°C
200
IC, COLLECTOR CURRENT (A)
0
VCE, COLLECTOR−EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
200
13 V
C, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (A)
250
100 125 150 175 200
TJ = 25°C
0
10
20
30
40
50
60
70
80
90 100
TJ, JUNCTION TEMPERATURE (°C)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs. TJ
Figure 6. Typical Capacitance
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3
NGTB30N120IHRWG
TYPICAL CHARACTERISTICS
16
VGE, GATE−EMITTER VOLTAGE (V)
IF, FORWARD CURRENT (A)
70
60
50
40
TJ = 25°C
30
20
TJ = 150°C
10
0
0
0.5
1.0
1.5
2.0
2.5
8
6
4
VCE = 600 V
VGE = 15 V
IC = 20 A
2
0
0
Eoff
0.4
td(off)
tf
100
VCE = 600 V
VGE = 15 V
IC = 30 A
Rg = 10 W
0.2
40
60
80
100
120
140
20
40
60
80
100
120
140
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Loss vs. Temperature
Figure 10. Switching Time vs. Temperature
3
2
1
0
20
160
1000
Eoff
5
0
TJ, JUNCTION TEMPERATURE (°C)
SWITCHING TIME (ns)
4
10
160
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
5
SWITCHING LOSS (mJ)
20
250
1000
0.6
6
200
150
Figure 8. Typical Gate Charge
0.8
0
100
Figure 7. Diode Forward Characteristics
1.0
0
50
QG, GATE CHARGE (nC)
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
10
VF, FORWARD VOLTAGE (V)
VCE = 600 V
VGE = 15 V
IC = 30 A
Rg = 10 W
1.2
12
3.0
1.6
1.4
14
35
50
65
td(off)
10
80
tf
100
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
5
20
35
50
65
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. IC
Figure 12. Switching Time vs. IC
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80
NGTB30N120IHRWG
TYPICAL CHARACTERISTICS
10000
Eoff
2
1.5
1
VCE = 600 V
VGE = 15 V
TJ = 150°C
IC = 30 A
0.5
0
5
15
25
35
45
55
65
75
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
2.5
tf
100
10
85
15
25
35
45
55
65
75
Figure 13. Switching Loss vs. Rg
Figure 14. Switching Time vs. Rg
85
Eoff
1.5
1
IC = 30 A
VGE = 15 V
TJ = 150°C
Rg = 10 W
0.5
SWITCHING TIME (ns)
1000
td(off)
IC = 30 A
VGE = 15 V
TJ = 150°C
Rg = 10 W
10
250 300 350 400 450 500 550 600 650 700 750 800
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE
Figure 16. Switching Time vs. VCE
1 ms
1000
100 ms
100
IC, COLLECTOR CURRENT (A)
1000
50 ms
dc operation
10
1
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
0.1
1
tf
100
0
250 300 350 400 450 500 550 600 650 700 750 800
IC, COLLECTOR CURRENT (A)
5
Rg, GATE RESISTOR (W)
2
0.01
VCE = 600 V
VGE = 15 V
TJ = 150°C
IC = 30 A
Rg, GATE RESISTOR (W)
2.5
SWITCHING LOSS (mJ)
td(off)
1000
10
100
VGE = 15 V, TC = 125°C
100
10
1
1000
1
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area
Figure 18. Reverse Bias Safe Operating Area
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NGTB30N120IHRWG
TYPICAL CHARACTERISTICS
140
1500
120
1450
Ipk (A)
100
80
V(BR)CES (V)
TC = 80°C
TC = 110°C
60
40
20
VCE = 600 V, TJ ≤ 175°C, Rgate = 10 W,
VGE = 0/15 V, Tcase = 80°C or 110°C
(as noted), D = 0.5
0
0.01
0.1
1
10
1400
1350
1300
1250
100
1200
−40
1000
−15
10
35
60
85
110
135
FREQUENCY (kHz)
TJ, JUNCTION TEMPERATURE (°C)
Figure 19. Collector Current vs. Switching
Frequency
Figure 20. Typical V(BR)CES vs. Temperature
1
RqJC = 0.392
50% Duty Cycle
R(t) (°C/W)
0.1 20%
Junction R1
10%
5%
0.01
Rn
C2
Cn
Ci = ti/Ri
2%
C1
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.001
0.000001
R2
0.00001
0.0001
0.001
0.01
PULSE TIME (sec)
Figure 21. IGBT Transient Thermal Impedance
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6
0.1
Case
Ri (°C/W)
ti (sec)
0.04597
0.000101
0.009460
0.004201
0.020965
0.040205
0.003094
0.037895
0.016194
0.000100
0.246889
0.000218
0.031311
0.001057
0.007527
0.004770
0.007965
0.323174
0.083449
0.617513
316.228
0.405040
1
10
NGTB30N120IHRWG
Figure 22. Test Circuit for Switching Characteristics
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NGTB30N120IHRWG
Figure 23. Definition of Turn On Waveform
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8
NGTB30N120IHRWG
Figure 24. Definition of Turn Off Waveform
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9
NGTB30N120IHRWG
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE A
E
E2/2
B
A
NOTE 4
SEATING
PLANE
Q
E2
D
2
B A
4
DIM
A
A1
b
b2
b4
c
D
E
E2
e
L
L1
P
Q
S
3
L1
NOTE 5
L
2X
b2
c
b4
3X
e
b
0.25
A1
NOTE 7
M
B A
M
NOTE 6
S
NOTE 3
1
M
P
A
NOTE 4
0.635
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
M
MILLIMETERS
MIN
MAX
4.70
5.30
2.20
2.60
1.00
1.40
1.65
2.35
2.60
3.40
0.40
0.80
20.30
21.40
15.50
16.25
4.32
5.49
5.45 BSC
19.80
20.80
3.50
4.50
3.55
3.65
5.40
6.20
6.15 BSC
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NGTB30N120IHR/D