NGTB40N120FL3W D

NGTB40N120FL3WG
IGBT - Ultra Field Stop
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Ultra Field Stop Trench construction, and provides
superior performance in demanding switching applications, offering
both low on−state voltage and minimal switching loss. The IGBT is
well suited for UPS and solar applications. Incorporated into the device
is a soft and fast co−packaged free wheeling diode with a low forward
voltage.
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40 A, 1200 V
VCEsat = 1.7 V
Eoff = 1.1 mJ
Features
•
•
•
•
•
Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for High Speed Switching
These are Pb−Free Devices
C
Typical Applications
• Solar Inverter
• Uninterruptible Power Inverter Supplies (UPS)
• Welding
G
E
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
VCES
1200
V
Collector current
@ TC = 25°C
@ TC = 100°C
IC
Pulsed collector current, Tpulse
limited by TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
A
160
40
ICM
G
C
160
A
IF
TO−247
CASE 340AL
E
A
MARKING DIAGRAM
160
40
Diode pulsed current, Tpulse limited
by TJmax
IFM
160
A
Gate−emitter voltage
Transient gate−emitter voltage
(Tpulse = 5 ms, D < 0.10)
VGE
±20
±30
V
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
40N120FL3
AYWWG
W
454
227
Operating junction temperature range
TJ
−55 to +175
°C
Storage temperature range
Tstg
−55 to +175
°C
Lead temperature for soldering, 1/8″
from case for 5 seconds
TSLD
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
NGTB40N120FL3WG
© Semiconductor Components Industries, LLC, 2016
May, 2016 − Rev. 1
1
Package
Shipping
TO−247 30 Units / Rail
(Pb−Free)
Publication Order Number:
NGTB40N120FL3W/D
NGTB40N120FL3WG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction−to−case, for IGBT
Rating
RqJC
0.33
°C/W
Thermal resistance junction−to−case, for Diode
RqJC
0.61
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
1200
−
−
V
VGE = 15 V, IC = 40 A
VGE = 15 V, IC = 40 A, TJ = 175°C
VCEsat
−
−
1.7
2.3
1.95
−
V
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
VGE = VCE, IC = 400 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 175°C
ICES
−
−
−
0.5
0.4
−
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V , VCE = 0 V
IGES
−
−
200
nA
Cies
−
4912
−
pF
VCE = 20 V, VGE = 0 V, f = 1 MHz
Coes
−
140
−
Cres
−
80
−
Gate−emitter threshold voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
VCE = 600 V, IC = 40 A, VGE = 15 V
Gate to collector charge
Qg
−
212
−
Qge
−
43
−
Qgc
−
102
−
td(on)
−
18
−
tr
−
31
−
td(off)
−
145
−
nC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
TJ = 25°C
VCC = 600 V, IC = 40 A
Rg = 10 W
VGE = 15V
tf
−
107
−
Eon
−
1.6
−
Eoff
−
1.1
−
Total switching loss
Ets
−
2.7
−
Turn−on delay time
td(on)
−
20
−
tr
−
31
−
td(off)
−
153
−
tf
−
173
−
Turn−on switching loss
Turn−off switching loss
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 175°C
VCC = 600 V, IC = 40 A
Rg = 10 W
VGE = 15 V
ns
mJ
ns
Eon
−
2.2
−
Turn−off switching loss
Eoff
−
1.7
−
Total switching loss
Ets
−
3.9
−
VF
−
−
3.0
2.8
3.4
−
V
trr
−
86
−
ns
mc
mJ
DIODE CHARACTERISTIC
Forward voltage
VGE = 0 V, IF = 40 A
VGE = 0 V, IF = 40 A, TJ = 175°C
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Diode peak rate of fall of reverse recovery
current during tb
TJ = 25°C
IF = 40 A, VR = 600 V
diF/dt = 500 A/ms
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2
Qrr
−
0.56
−
Irrm
−
12
−
A
dIrrm/dt
−
−210
−
A/ms
NGTB40N120FL3WG
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Reverse recovery time
trr
Reverse recovery charge
TJ = 125°C
IF = 40 A, VR = 600 V
diF/dt = 500 A/ms
Qrr
−
136
−
ns
−
1.47
−
mc
Irrm
dIrrm/dt
−
20
−
A
−
−212
−
A/ms
DIODE CHARACTERISTIC
Reverse recovery current
Diode peak rate of fall of reverse recovery
current during tb
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
NGTB40N120FL3WG
TYPICAL CHARACTERISTICS
160
160
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
140
11 V
120
100
80
10 V
60
40
9V
20
7V
8V
160
1
2
3
4
5
120
11 V
TJ = 150°C
100
10 V
80
60
9V
40
8V
20
7V
0
8
7
3
4
5
6
7
Figure 1. Output Characteristics
Figure 2. Output Characteristics
160
100
80
10 V
60
40
9V
20
7 V and 8 V
0
1
2
3
4
5
6
7
140
120
11 V
TJ = 175°C
100
10 V
80
60
9V
40
8V
20
7V
0
8
0
1
2
3
4
5
6
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Output Characteristics
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
160
140
TJ = 25°C
120
100
TJ = 175°C
80
60
40
20
0
2
4
6
8
10
12
14
8
3.5
3.0
IC = 75 A
2.5
IC = 40 A
2.0
IC = 20 A
1.5
1.0
−75 −50 −25
0
25
50
75 100 125 150 175 200
VGE, GATE−EMITTER VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Transfer Characteristics
Figure 6. VCE(sat) vs. TJ
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4
8
VGE = 20 V − 13 V
TJ = −55°C
11 V
0
2
VCE, COLLECTOR−EMITTER VOLTAGE (V)
120
0
1
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE =
20 V − 13 V
140
6
IC, COLLECTOR CURRENT (A)
0
IC, COLLECTOR CURRENT (A)
140
0
0
IC, COLLECTOR CURRENT (A)
VGE = 20 V − 13 V
VGE = 20 V − 13 V
TJ = 25°C
NGTB40N120FL3WG
TYPICAL CHARACTERISTICS
100
Cies
90
IF, FORWARD CURRENT (A)
CAPACITANCE (pF)
10,000
TJ = 25°C
1000
Coes
100
Cres
80
70
60
50
40
30
TJ = 175°C
20
10
10
0
10
20
30
40
50
60
70
80
90
100
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VF, FORWARD VOLTAGE (V)
Figure 7. Typical Capacitance
Figure 8. Diode Forward Characteristics
4.5
2.8
VCE = 600 V
VGE = 15 V
IC = 40 A
Rg = 10 W
14
SWITCHING LOSS (mJ)
VGE, GATE−EMITTER VOLTAGE (V)
0.5
VCE, COLLECTOR−EMITTER VOLTAGE (V)
16
12
10
8
6
VCE = 600 V
VGE = 15 V
IC = 40 A
4
2
0
2.3
Eon
1.8
Eoff
1.3
0.8
0.3
0
50
100
150
200
250
0
20
40
60
80
100 120 140 160 180 200
QG, GATE CHARGE (nC)
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Typical Gate Charge
Figure 10. Switching Loss vs. Temperature
6
SWITCHING LOSS (mJ)
1000
SWITCHING TIME (ms)
TJ = 25°C
0
td(off)
100
tf
tr
td(on)
10
VCE = 600 V
VGE = 15 V
IC = 40 A
Rg = 10 W
1
0
20
40
VCE = 600 V
VGE = 15 V
TJ = 175°C
Rg = 10 W
5
Eon
4
Eoff
3
2
1
0
60
80
100 120 140 160 180 200
10
20
30
40
50
60
70
TJ, JUNCTION TEMPERATURE (°C)
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Time vs. Temperature
Figure 12. Switching Loss vs. IC
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5
80
90
NGTB40N120FL3WG
TYPICAL CHARACTERISTICS
10
1000
VCE = 600 V
VGE = 15 V
TJ = 175°C
IC = 40 A
td(off)
tf
100
tr
td(on)
10
VCE = 600 V
VGE = 15 V
TJ = 175°C
Rg = 10 W
1
10
20
8
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
9
7
6
5
4
3
Eoff
2
1
0
30
40
50
60
70
80
90
0
20
30
40
50
60
RG, GATE RESISTOR (W)
Figure 13. Switching Time vs. IC
Figure 14. Switching Loss vs. RG
70
4.0
VGE = 15 V
TJ = 175°C
IC = 40 A
Rg = 10 W
3.5
td(off)
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
10
IC, COLLECTOR CURRENT (A)
1000
tf
tr
100
td(on)
VCE = 600 V
VGE = 15 V
TJ = 175°C
IC = 40 A
3.0
Eon
2.5
Eoff
2.0
1.5
1.0
0.5
0
10
0
10
20
30
40
50
60
350 400
70
550
600
650
700
750 800
Figure 15. Switching Time vs. RG
Figure 16. Switching Loss vs. VCE
1000
IC, COLLECTOR CURRENT (A)
tf
td(off)
tr
td(on)
10
100
dc operation
10
50 ms
450
500
550
600
650
700
750 800
100 ms
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
1
0.1
350 400
500
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE = 15 V
TJ = 175°C
IC = 40 A
Rg = 10 W
100
450
RG, GATE RESISTOR (W)
1000
SWITCHING TIME (ns)
Eon
1
10
1 ms
100
1K
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Switching Time vs. VCE
Figure 18. Safe Operating Area
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6
10K
NGTB40N120FL3WG
TYPICAL CHARACTERISTICS
350
trr, REVERSE RECOVERY TIME (ns)
IC, COLLECTOR CURRENT (A)
1000
100
10
VGE = 15 V, TC = 175°C
1
10
100
TJ = 175°C, IF = 40 A
200
150
100
TJ = 25°C, IF = 40 A
50
1K
10K
100
300
500
700
900
diF/dt, DIODE CURRENT SLOPE (A/ms)
Figure 19. Reverse Bias Safe Operating Area
Figure 20. trr vs. diF/dt
Irm, REVERSE RECOVERY CURRENT (A)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
3.5
TJ = 175°C, IF = 40 A
3.0
2.5
2.0
1.5
TJ = 25°C, IF = 40 A
1.0
0.5
VR = 400 V
100
300
500
700
900
1100
VR = 400 V
40
TJ = 175°C, IF = 40 A
30
20
TJ = 25°C, IF = 40 A
10
0
100
300
500
700
900
diF/dt, DIODE CURRENT SLOPE (A/ms)
Figure 21. Qrr vs. diF/dt
Figure 22. Irm vs. diF/dt
4.5
4.0
IC = 75 A
3.5
IC = 40 A
3.0
2.5
IC = 20 A
2.0
1.5
1.0
−75 −50 −25
0
25
75 100 125 150 175 200
50
TJ, JUNCTION TEMPERATURE (°C)
Figure 23. VF vs. TJ
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7
1100
50
diF/dt, DIODE CURRENT SLOPE (A/ms)
VF, FORWARD VOLTAGE (V)
Qrr, REVERSE RECOVERY CHARGE (mC)
250
0
1
0
VR = 400 V
300
1100
NGTB40N120FL3WG
TYPICAL CHARACTERISTICS
180
160
TC = 110°C
140
TC = 80°C
Ipk (A)
120
VCE = 600 V,
Rgate = 10 W,
VGE = 15 V
TC = 110°C
100
TC = 80°C
80
60
40
20
0
0.01
0.1
1
10
100
1000
FREQUENCY (kHz)
Figure 24. Collector Current vs. Switching Frequency
R(t), SQUARE−WAVE PEAK (°C/W)
1
RqJC = 0.33
50% Duty Cycle
0.1 20%
10%
5%
0.01
Junction R1
R2
Rn
C1
C2
Cn
2%
0.001
0.0001
Case
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.000001
Ri (°C/W) Ci (J/W)
0.0065
0.0154
0.0811
0.0039
0.0186
0.0539
0.1007
0.0314
0.1115
0.0897
0.0172
1.8437
0.00001
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 25. IGBT Transient Thermal Impedance
R(t), SQUARE−WAVE PEAK (°C/W)
1
RqJC = 0.61
50% Duty Cycle
20%
0.1 10%
Junction R1
R2
Rn
C1
C2
Cn
Case
5%
2%
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.01
0.000001
0.00001
Ri (°C/W) Ci (J/W)
0.000090
0.000661
0.002014
0.002059
0.005527
0.031996
0.117443
0.129731
0.225628
0.551763
0.011089
0.015127
0.015703
0.048571
0.057211
0.031254
0.026926
0.077082
0.140155
0.181237
0.0001
0.001
PULSE TIME (sec)
0.01
Figure 26. Diode Transient Thermal Impedance
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8
0.1
1
NGTB40N120FL3WG
Figure 27. Test Circuit for Switching Characteristics
Figure 28. Definition of Turn On Waveform
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9
NGTB40N120FL3WG
Figure 29. Definition of Turn Off Waveform
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10
NGTB40N120FL3WG
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE A
B
A
NOTE 4
E
SEATING
PLANE
0.635
M
P
A
Q
E2
D
S
NOTE 3
1
2
4
DIM
A
A1
b
b2
b4
c
D
E
E2
e
L
L1
P
Q
S
3
L1
NOTE 5
L
2X
b2
c
b4
3X
e
A1
b
0.25
NOTE 7
M
B A
M
NOTE 6
E2/2
NOTE 4
B A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
M
MILLIMETERS
MIN
MAX
4.70
5.30
2.20
2.60
1.00
1.40
1.65
2.35
2.60
3.40
0.40
0.80
20.30
21.40
15.50
16.25
4.32
5.49
5.45 BSC
19.80
20.80
3.50
4.50
3.55
3.65
5.40
6.20
6.15 BSC
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NGTB40N120FL3W/D