APT40GR120B2D30 APT40GR120B2D30 1200V, 40A, VCE(on)= 2.5V Typical Ultra Fast NPT - IGBT® The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT® offers superior ruggedness and ultrafast switching speed. Features • Low Saturation Voltage • Short Circuit Withstand Rated • Low Tail Current • High Frequency Switching • RoHS Compliant • Ultra Low Leakage Current Combi (IGBT and Diode) Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is recommended for applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). All Ratings: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol Parameter Ratings Vces Collector Emitter Voltage 1200 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current @ TC = 25°C 88 I C2 Continuous Collector Current @ TC = 110°C 40 I CM Pulsed Collector Current 160 SCWT PD TJ,TSTG TL 1 Unit V A Short Circuit Withstand Time: VCE = 600V, VGE = 15V, TC=125°C 10 μs Total Power Dissipation @ TC = 25°C 500 W Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Min V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA) 1200 VGE(TH) Gate Threshold Voltage VCE(ON) I CES Typ Max 5.0 6.0 Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 25°C) 2.5 3.2 Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 125°C) 3.5 Collector-Emitter On Voltage (VGE = 15V, I C = 88A, Tj = 25°C) 3.5 (VCE = VGE, I C = 2.5mA, Tj = 25°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 3 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) I GES 20 2 2 Unit Volts 1100 μA ±250 nA 200 Gate-Emitter Leakage Current (VGE = ±20V) Microsemi Website - http://www.microsemi.com 052-6401 Rev B 7-2012 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. DYNAMIC CHARACTERISTICS Symbol Parameter Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate to Emitter Plateau Voltage Qg Total Gate Charge 3 Qge Gate-Emitter Charge Qgc Gate- Collector Charge td(on) Turn-On Delay Time tr td(off) tf Test Conditions Min Typ Capacitance 3980 VGE = 0V, VCE = 25V 320 f = 1MHz 80 Max V 210 VGE = 15V 25 VCE= 600V nC 90 IC = 40A Inductive Switching (25°C) 22 VCC = 600V 25 Turn-Off Delay Time VGE = 15V 163 ns 40 IC = 40A Turn-On Switching Energy RG = 4.3 Ω 1375 3000 Eoff 6 Turn-Off Switching Energy TJ = +25°C 906 1650 td(on) Turn-On Delay Time 5 tr td(off) tf 4 Inductive Switching (125°C) 22 Current Rise Time VCC = 600V 25 Turn-Off Delay Time VGE = 15V 185 Current Fall Time μJ ns 47 IC = 40A 5 Turn-On Switching Energy RG = 4.3 Ω Eoff 6 Turn-Off Switching Energy TJ = +125°C Eon2 Unit pF 7 Gate Charge Current Rise Time Current Fall Time Eon2 APT40GR120B2D30 4 1916 3500 1186 2500 Typ Max μJ THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic Min Junction to Case Thermal Resistance (IGBT) .25 Junction to Case Thermal Resistance (Diode) .80 RθJA Junction to Ambient Thermal Resistance 40 WT Package Weight RθJC Unit °C/W .22 oz 6.2 g 052-6401 Rev B 7-2012 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380μs, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES APT40GR120B2D30 80 300 V GE IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 250 TJ= - 55°C 60 TJ= 25°C 50 13V 10V 15V = 15V 70 TJ= 125°C 40 TJ= 150°C 30 20 10 9V 200 150 8V 100 7V 50 6V 0 1 2 3 4 5 6 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25°C) 4.5 4.0 IC = 40A 3.5 3.0 IC = 20A 2.5 2.0 VGE = 15V. 250μs PULSE TEST <0.5 % DUTY CYCLE 1.5 1.0 -50 -25 0 25 50 75 100 IC = 80A IC = 40A 3 IC = 20A 2 1 24 28 32 250μs PULSE TEST<0.5 % DUTY CYCLE 150 100 50 0 TJ= 25°C 0 TJ= -55°C 2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 4, Transfer Characteristics 1.10 1.05 1.00 0.95 0.90 0.85 6 0.75 -.50 -.25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE FIGURE 6, Threshold Voltage vs Junction Temperature 18 100 80 60 40 20 0 25 50 75 100 125 150 TC, Case Temperature (°C) FIGURE 7, DC Collector Current vs Case Temperature I = 40A C T = 25°C 16 J 14 VCE = 240V 12 VCE = 600V 10 8 VCE = 960V 7-2012 VGE, GATE-TO-EMITTER VOLTAGE (V) 120 IC, DC COLLECTOR CURRENT (A) 20 0.80 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage 0 16 6 4 Rev B 0 12 200 125 TJ = 25°C. 250μs PULSE TEST <0.5 % DUTY CYCLE 4 8 TJ= 125°C TJ, Junction Temperature (°C) FIGURE 3, On State Voltage vs Junction Temperature 6 5 4 2 0 0 100 200 GATE CHARGE (nC) FIGURE 8, Gate charge 300 052-6401 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 250 0 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25°C) IC = 80A VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 5.0 0 IC, COLLECTOR CURRENT (A) 0 TYPICAL PERFORMANCE CURVES APT40GR120B2D30 1.0E−8 C, CAPACITANCE (F) Cies APT30DQ120 1.0E−9 Coes V CE IC V CC 1.0E−10 Cres A D.U.T. 1.0E−11 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 9, Capacitance vs Collector-To-Emitter Voltage 100 FIGURE 10, Inductive Switching Test Circuit 1000 Td(on) 10 Td(off) SWITCHING TIME (ns) SWITCHING TIME (ns) Tr 100 Tf VCE = 600V, VGE=15V, RG = 4.3Ω TJ = 25°C or 125°C 1 10 10 20 30 40 50 60 70 80 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 11, Turn-On Time vs Collector Current 1000 Eoff VCE = 600V, VGE=15V, RG = 4.3Ω TJ = 25°C TJ = 125°C SWITCHING ENERGY LOSS (μJ) SWITCHING ENERGY LOSS (μJ) 50 60 70 80 90 Eoff 1000 700 10 20 30 40 50 60 70 80 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 13, Energy Loss vs Collector Current VCE = 600V, VGE=15V, IC = 40A TJ = 125°C 0 10 20 30 40 50 RG, GATE RESISTANCE (Ω) FIGURE 14, Energy Loss vs Gate Resistance 300 Eon2 1000 Eoff VCE = 600V, VGE=15V, RG = 4.3Ω IC = 40A 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) FIGURE 15, Energy Losses vs Junction Temperature IC, COLLECTOR CURRENT (A) SWITCHING ENERGY LOSSES (μJ) 7-2012 Rev B 40 Eon2 10000 052-6401 30 5000 Eon2 100 20 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 12, Turn-Off Time vs Collector Current 10000 100 VCE = 600V, VGE=15V, RG = 4.3Ω TJ = 25°C TJ = 125°C 100 10 100μs 100ms 1ms 10ms 1 0.1 1 10 100 1000 2000 VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 16, Minimum Switching Safe Operating Area TYPICAL PERFORMANCE CURVES APT40GR120B2D30 0.25 D = 0.9 0.20 0.7 0.15 0.5 0.10 Note: P DM 0.3 t1 t2 0.05 t Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C 0.1 SINGLE PULSE 0.05 0 10 -3 10-2 0.1 1 10 7-2012 RECTANGULAR PULSE DURATION (SECONDS) Figure 17, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration Rev B 10 -4 052-6401 ZθJC, THERMAL IMPEDANCE (°C/W) 0.30 APT40GR120B2D30 TYPICAL PERFORMANCE CURVES ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE All Ratings: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol IF (AV) IF (RMS) IFSM APT40GR120B2D30 Characteristic / Test Conditions Maximum Average Forward Current (TC = 110°C, Duty Cycle = 0.5) 30 RMS Forward Current (Square wave, 50% duty) 43 Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) UNIT Amps 210 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN Forward Voltage VF TYP IF = 30A 2.8 IF = 60A 3.4 IF = 30A, TJ = 125°C 2.1 MAX UNIT Volts DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX trr Reverse Recovery Time I = 1A, di /dt = -100A/μs, V = 30V, T = 25°C F F R J - 26 trr Reverse Recovery Time - 320 Qrr Reverse Recovery Charge - 545 - 4 - 435 ns - 2100 nC - 9 - 180 ns - 2975 nC - 28 Amps IRRM Reverse Recovery Time Qrr Reverse Recovery Charge Reverse Recovery Time Qrr Reverse Recovery Charge VR = 800V, TC = 25°C IF = 30A, diF/dt = -200A/μs Maximum Reverse Recovery Current trr IRRM IF = 30A, diF/dt = -200A/μs Maximum Reverse Recovery Current trr IRRM VR = 800V, TC = 125°C IF = 30A, diF/dt = -1000A/μs Maximum Reverse Recovery Current VR = 800V, TC = 125°C ns nC - - 0.80 0.60 7-2012 0.7 0.50 0.5 0.40 0.30 Note: 0.3 t1 t2 0.20 t SINGLE PULSE 0.1 0.10 0 Rev B D = 0.9 0.70 P DM Z JC, THERMAL IMPEDANCE (°C/W) θ 0.90 052-6401 UNIT 0.05 10-5 10-4 Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 18. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION Amps Amps APT40GR120B2D30 TYPICAL PERFORMANCE CURVES 200 160 140 TJ = 175°C 120 100 80 TJ = 25°C TJ = 125°C 60 40 TJ = -55°C 20 0 0 1 2 3 4 5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 19. Forward Current vs. Forward Voltage Qrr, REVERSE RECOVERY CHARGE (nC) 5000 T = 125°C J V = 800V R 60A 4000 3000 30A 2000 15A 1000 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/μs) Figure 21. Reverse Recovery Charge vs. Current Rate of Change trr 1.0 trr 0.8 R 60A 500 400 30A 300 15A 200 100 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/μs) Figure 20. Reverse Recovery Time vs. Current Rate of Change 35 T = 125°C J V = 800V R 30 60A 25 30A 20 15 15A 10 5 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/μs) Figure 22. Reverse Recovery Current vs. Current Rate of Change 50 Qrr Duty cycle = 0.5 T = 175°C 45 J 40 IRRM 35 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/μs) 1.2 T = 125°C J V = 800V 0 IRRM, REVERSE RECOVERY CURRENT (A) IF, FORWARD CURRENT (A) 180 trr, REVERSE RECOVERY TIME (ns) 600 0.6 30 25 20 0.4 Qrr 15 10 0.2 5 0.0 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 23. Dynamic Parameters vs. Junction Temperature 0 25 50 75 100 125 150 175 Case Temperature (°C) Figure 24. Maximum Average Forward Current vs. CaseTemperature 200 160 140 120 100 7-2012 80 60 Rev B 40 20 0 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 25. Junction Capacitance vs. Reverse Voltage 052-6401 CJ, JUNCTION CAPACITANCE (pF) 180 Dynamic Characteristics APT40GR120B2D30 TJ = 25°C unless otherwise specified Vr diF /dt Adjus t +18V 0V D.U.T. 30μH trr/Q rr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 26. Diode Test Circuit 1 IF - Forward Conduction Current 1 2 diF/dt - Rate of Diode Current Change Through Zero Crossing. 4 Zer o 3 IRRM - Maximum Reverse Recovery Current 5 4 trr - Reverse Recovery Time measured from zero crossing where 3 2 diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25, IRRM passes through zero. 5 Qrr - Area Under the Curve Defined by IRRM and tRR. Figure 27. Diode Reverse Recovery Waveform Definition T-MAX® (B2) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) Collector (Cathode) 5.38 (.212) 6.20 (.244) 20.80 (.819) 21.46 (.845) 4.50 (.177) Max. 7-2012 0.40 (.016) 1.016(.040) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Gate Collector (Cathode) 052-6401 Rev B Emitter (Anode) 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) 0.25 I RRM