NGTB40N120IHR D

NGTB40N120IHRWG
IGBT with Monolithic Free
Wheeling Diode
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on−state voltage and minimal switching loss. The IGBT is
well suited for resonant or soft switching applications.
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40 A, 1200 V
VCEsat = 2.30 V
Eoff = 0.95 mJ
Features
•
•
•
•
•
Extremely Efficient Trench with Fieldstop Technology
Low Switching Loss Reduces System Power Dissipation
Optimized for Low Losses in IH Cooker Application
Reliable and Cost Effective Single Die Solution
This is a Pb−Free Device
C
Typical Applications
• Inductive Heating
• Consumer Appliances
• Soft Switching
G
E
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
VCES
1200
V
Collector current
@ TC = 25°C
@ TC = 100°C
IC
Pulsed collector current, Tpulse
limited by TJmax, 10 ms pulse,
VGE = 15 V
ICM
Diode forward current
@ TC = 25°C
@ TC = 100°C
IF
Diode pulsed current, Tpulse limited
by TJmax, 10 ms pulse,
VGE = 0 V
IFM
120
A
Gate−emitter voltage
Transient Gate−emitter voltage
(Tpulse = 5 ms, D < 0.10)
VGE
$20
$25
V
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
Operating junction temperature
range
TJ
−40 to +175
°C
Storage temperature range
Tstg
−55 to +175
°C
Lead temperature for soldering, 1/8”
from case for 5 seconds
TSLD
260
°C
A
80
40
120
A
A
80
40
January, 2014 − Rev. 1
C
TO−247
CASE 340AL
E
MARKING DIAGRAM
40N120IHR
AYWWG
W
384
192
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2014
G
1
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
NGTB40N120IHRWG
TO−247
(Pb−Free)
30 Units / Rail
Publication Order Number:
NGTB40N120IHR/D
NGTB40N120IHRWG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction−to−case
Rating
RqJC
0.39
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
1200
−
−
V
VGE = 15 V, IC = 40 A
VGE = 15 V, IC = 40 A, TJ = 175°C
VCEsat
−
−
2.30
2.70
2.55
−
V
VGE = VCE, IC = 250 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 175°C
ICES
−
−
−
−
0.2
2.8
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V, VCE = 0 V
IGES
−
−
100
nA
Cies
−
5320
−
pF
Coes
−
124
−
Cres
−
100
−
Gate charge total
Qg
−
225
−
Gate to emitter charge
Qge
−
36
−
Qgc
−
98
−
TJ = 25°C
VCC = 600 V, IC = 40 A
Rg = 10 W
VGE = 0 V/ 15V
td(off)
−
230
−
tf
−
120
−
Eoff
−
0.95
−
mJ
TJ = 150°C
VCC = 600 V, IC = 40 A
Rg = 10 W
VGE = 0 V/ 15V
td(off)
−
245
−
ns
tf
−
180
−
Eoff
−
2.10
−
mJ
VGE = 0 V, IF = 40 A
VGE = 0 V, IF = 40 A, TJ = 175°C
VF
−
−
2.10
3.30
2.60
−
V
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
VCE = 600 V, IC = 40 A, VGE = 15 V
Gate to collector charge
nC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−off delay time
Fall time
Turn−off switching loss
Turn−off delay time
Fall time
Turn−off switching loss
ns
DIODE CHARACTERISTIC
Forward voltage
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NGTB40N120IHRWG
TYPICAL CHARACTERISTICS
250
TJ = 25°C
VGE = 20 to 15 V
11 V
150
10 V
100
9V
50
8V
1
2
3
4
6
5
10 V
100
9V
50
8V
7V
0
8
0
1
2
3
4
6
5
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
200
11 V
150
10 V
100
9V
50
7V
8V
0
1
2
3
4
5
6
VCE = 20 V
140
TJ = 25°C
120
TJ = 150°C
100
80
60
40
20
0
7
8
0
1
2
3
4
5
6
7
8
9 10
11 12 13
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
4.00
10,000
IC = 80 A
3.50
3.00
IC = 40 A
2.50
IC = 20 A
2.00
1.50
1.00
Cies
1000
100
Coes
Cres
0.50
0.00
−75 −50 −25
10
0
25
50
75
8
160
TJ = −40°C
VGE = 20 to 13 V
0
11 V
150
VCE, COLLECTOR−EMITTER VOLTAGE (V)
250
IC, COLLECTOR CURRENT (A)
7
VGE = 20 to 15 V
13 V
7V
0
TJ = 150°C
200
IC, COLLECTOR CURRENT (A)
0
VCE, COLLECTOR−EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
200
13 V
C, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (A)
250
100 125 150 175 200
TJ = 25°C
0
10
20
30
40
50
60
70
80
90 100
TJ, JUNCTION TEMPERATURE (°C)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs. TJ
Figure 6. Typical Capacitance
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3
NGTB40N120IHRWG
TYPICAL CHARACTERISTICS
16
VGE, GATE−EMITTER VOLTAGE (V)
IF, FORWARD CURRENT (A)
70
60
50
40
TJ = 25°C
30
20
TJ = 150°C
10
0
0
0.5
1.0
1.5
2.0
2.5
20
40
60
80
100
SWITCHING TIME (ns)
120
140
0
0
50
100
200
150
100
tf
VCE = 600 V
VGE = 15 V
IC = 40 A
Rg = 10 W
0
20
40
60
80
100
120
140
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Loss vs. Temperature
Figure 10. Switching Time vs. Temperature
160
1000
3
2
1
0
20
250
td(off)
10
160
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
SWITCHING LOSS (mJ)
Eoff
Eoff
5
VCE = 600 V
VGE = 15 V
IC = 40 A
2
1000
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
4
4
Figure 8. Typical Gate Charge
0.5
5
6
Figure 7. Diode Forward Characteristics
1
6
8
QG, GATE CHARGE (nC)
VCE = 600 V
VGE = 15 V
IC = 40 A
Rg = 10 W
0
10
VF, FORWARD VOLTAGE (V)
1.5
0
12
3.0
2.5
2
14
35
50
65
td(off)
10
80
tf
100
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
5
20
35
50
65
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. IC
Figure 12. Switching Time vs. IC
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4
80
NGTB40N120IHRWG
TYPICAL CHARACTERISTICS
10000
4
Eoff
3
2.5
2
1.5
VCE = 600 V
VGE = 15 V
TJ = 150°C
IC = 40 A
1
0.5
0
5
15
25
35
45
55
65
75
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
3.5
100
10
VCE = 600 V
VGE = 15 V
TJ = 150°C
IC = 40 A
5
15
25
35
45
55
65
75
Rg, GATE RESISTOR (W)
Rg, GATE RESISTOR (W)
Figure 13. Switching Loss vs. Rg
Figure 14. Switching Time vs. Rg
85
1000
2.5
Eoff
2
1.5
1
IC = 40 A
VGE = 15 V
TJ = 150°C
Rg = 10 W
0.5
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
tf
85
3
td(off)
tf
100
IC = 40 A
VGE = 15 V
TJ = 150°C
Rg = 10 W
0
250 300 350 400 450 500 550 600 650 700 750 800
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE
Figure 16. Switching Time vs. VCE
1000
100 ms
100
50 ms
dc operation
1
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
0.1
0.01
IC, COLLECTOR CURRENT (A)
1 ms
10
1
10
250 300 350 400 450 500 550 600 650 700 750 800
VCE, COLLECTOR−EMITTER VOLTAGE (V)
1000
IC, COLLECTOR CURRENT (A)
td(off)
1000
10
100
VGE = 15 V, TC = 125°C
100
10
1
1000
1
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area
Figure 18. Reverse Bias Safe Operating Area
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5
NGTB40N120IHRWG
TYPICAL CHARACTERISTICS
140
1500
120
1450
Ipk (A)
80
V(BR)CES (V)
TC = 80°C
100
TC = 110°C
60
40
20
VCE = 600 V, TJ ≤ 175°C, Rgate = 10 W,
VGE = 0/15 V, Tcase = 80°C or 110°C
(as noted), D = 0.5
0
0.01
0.1
1
10
1400
1350
1300
1250
100
1200
−40
1000
−15
10
35
60
85
110
135
FREQUENCY (kHz)
TJ, JUNCTION TEMPERATURE (°C)
Figure 19. Collector Current vs. Switching
Frequency
Figure 20. Typical V(BR)CES vs. Temperature
1
RqJC = 0.392
50% Duty Cycle
R(t) (°C/W)
0.1
20%
Junction R1
10%
5%
0.01
Rn
C2
Cn
Ci = ti/Ri
2%
C1
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.001
0.000001
R2
0.00001
0.0001
0.001
0.01
PULSE TIME (sec)
Figure 21. IGBT Transient Thermal Impedance
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6
0.1
Case
Ri (°C/W)
ti (sec)
0.04597
0.000101
0.009460
0.004201
0.020965
0.040205
0.003094
0.037895
0.016194
0.000100
0.246889
0.000218
0.031311
0.001057
0.007527
0.004770
0.007965
0.323174
0.083449
0.617513
316.228
0.405040
1
10
NGTB40N120IHRWG
Figure 22. Test Circuit for Switching Characteristics
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NGTB40N120IHRWG
Figure 23. Definition of Turn On Waveform
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8
NGTB40N120IHRWG
Figure 24. Definition of Turn Off Waveform
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9
NGTB40N120IHRWG
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE A
E
E2/2
B
A
NOTE 4
SEATING
PLANE
Q
E2
D
2
B A
4
DIM
A
A1
b
b2
b4
c
D
E
E2
e
L
L1
P
Q
S
3
L1
NOTE 5
L
2X
b2
c
b4
3X
e
b
0.25
A1
NOTE 7
M
B A
M
NOTE 6
S
NOTE 3
1
M
P
A
NOTE 4
0.635
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
M
MILLIMETERS
MIN
MAX
4.70
5.30
2.20
2.60
1.00
1.40
1.65
2.35
2.60
3.40
0.40
0.80
20.30
21.40
15.50
16.25
4.32
5.49
5.45 BSC
19.80
20.80
3.50
4.50
3.55
3.65
5.40
6.20
6.15 BSC
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NGTB40N120IHR/D