NGTB20N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers low on−state voltage with minimal switching loss. The IGBT is well suited for resonant or soft switching applications. http://onsemi.com 20 A, 1200 V VCEsat = 2.10 V Eoff = 0.45 mJ Features • • • • • Extremely Efficient Trench with Fieldstop Technology Low Switching Loss Reduces System Power Dissipation Optimized for Low Losses in IH Cooker Application Reliable and Cost Effective Single Die Solution These are Pb−Free Devices C Typical Applications • Inductive Heating • Consumer Appliances • Soft Switching G E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage @ TJ = 25°C VCES 1200 V Collector current @ TC = 25°C @ TC = 100°C IC A Pulsed collector current, Tpulse limited by TJmax, 10 ms Pulse, VGE = 15 V ICM Diode forward current @ TC = 25°C @ TC = 100°C IF Diode pulsed current, Tpulse limited by TJmax, 10 ms Pulse, VGE = 0 V IFM 120 A Gate−emitter voltage Transient Gate−emitter voltage (Tpulse = 5 ms, D < 0.10) VGE $20 $25 V Power Dissipation @ TC = 25°C @ TC = 100°C PD Operating junction temperature range TJ −40 to +175 °C Storage temperature range Tstg −55 to +175 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C 40 20 G 120 A A 40 20 October, 2013 − Rev. 1 TO−247 CASE 340AL E MARKING DIAGRAM 20N120IHR AYWWG W 384 192 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2013 C 1 A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device Package Shipping NGTB20N120IHRWG TO−247 (Pb−Free) 30 Units / Rail Publication Order Number: NGTB20N120IHR/D NGTB20N120IHRWG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case Rating RqJC 0.39 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 1200 − − V VGE = 15 V, IC = 20 A VGE = 15 V, IC = 20 A, TJ = 175°C VCEsat − − 2.10 2.30 2.45 − V VGE = VCE, IC = 250 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 1200 V VGE = 0 V, VCE = 1200 V, TJ = 175°C ICES − − − − 0.2 2.8 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V, VCE = 0 V IGES − − 100 nA Cies − 5320 − pF Coes − 124 − Cres − 100 − Qg − 225 − Qge − 36 − Qgc − 98 − TJ = 25°C VCC = 600 V, IC = 20 A Rg = 10 W VGE = 0 V/ 15V td(off) − 235 − tf − 155 − Eoff − 0.45 − mJ TJ = 150°C VCC = 600 V, IC = 20 A Rg = 10 W VGE = 0 V/ 15V td(off) − 255 − ns tf − 250 − Eoff − 1.10 − mJ VGE = 0 V, IF = 20 A VGE = 0 V, IF = 20 A, TJ = 175°C VF − − 1.75 2.50 2.10 V STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 600 V, IC = 20 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−off delay time Fall time Turn−off switching loss Turn−off delay time Fall time Turn−off switching loss ns DIODE CHARACTERISTIC Forward voltage http://onsemi.com 2 NGTB20N120IHRWG TYPICAL CHARACTERISTICS 250 TJ = 25°C VGE = 20 to 15 V 11 V 150 10 V 100 9V 50 8V 1 2 3 4 6 5 10 V 100 9V 50 8V 7V 0 8 0 1 2 3 4 6 5 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Output Characteristics Figure 2. Output Characteristics 200 11 V 150 10 V 100 9V 50 7V 8V 0 1 2 3 4 5 6 VCE = 20 V 140 TJ = 25°C 120 TJ = 150°C 100 80 60 40 20 0 7 8 160 TJ = −40°C VGE = 20 to 13 V 0 11 V 150 VCE, COLLECTOR−EMITTER VOLTAGE (V) 250 IC, COLLECTOR CURRENT (A) 7 VGE = 20 to 15 V 13 V 7V 0 TJ = 150°C 200 IC, COLLECTOR CURRENT (A) 0 VCE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 200 13 V 8 0 1 2 3 4 5 6 7 8 9 10 11 12 13 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 3.00 10,000 Cies IC = 40 A 2.50 C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (A) 250 IC = 20 A 2.00 IC = 10 A 1.50 1.00 1000 100 Coes Cres 0.50 0.00 −75 −50 −25 0 10 25 50 75 100 125 150 175 200 TJ = 25°C 0 10 20 30 40 50 60 70 80 90 100 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance http://onsemi.com 3 NGTB20N120IHRWG TYPICAL CHARACTERISTICS 16 VGE, GATE−EMITTER VOLTAGE (V) IF, FORWARD CURRENT (A) 70 60 50 40 TJ = 25°C 30 20 TJ = 150°C 10 0 0 0.5 1.0 1.5 2.0 2.5 8 6 4 VCE = 600 V VGE = 15 V IC = 20 A 2 0 0 Eoff 40 60 80 100 120 140 td(off) tf 100 VCE = 600 V VGE = 15 V IC = 20 A Rg = 10 W 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) Figure 9. Switching Loss vs. Temperature Figure 10. Switching Time vs. Temperature 3 2 1 0 20 160 1000 Eoff 5 0 TJ, JUNCTION TEMPERATURE (°C) SWITCHING TIME (ns) 4 10 160 VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W 5 SWITCHING LOSS (mJ) 20 250 1000 0.2 6 200 150 Figure 8. Typical Gate Charge 0.4 0 100 Figure 7. Diode Forward Characteristics 0.6 0 50 QG, GATE CHARGE (nC) SWITCHING TIME (ns) SWITCHING LOSS (mJ) 10 VF, FORWARD VOLTAGE (V) VCE = 600 V VGE = 15 V IC = 20 A Rg = 10 W 0.8 12 3.0 1.2 1.0 14 35 50 65 td(off) 10 80 tf 100 VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W 5 20 35 50 65 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Switching Loss vs. IC Figure 12. Switching Time vs. IC http://onsemi.com 4 80 NGTB20N120IHRWG TYPICAL CHARACTERISTICS 10000 SWITCHING LOSS (mJ) 1.4 Eoff 1.2 1 0.8 0.6 VCE = 600 V VGE = 15 V TJ = 150°C IC = 20 A 0.4 0.2 0 5 15 25 35 45 55 65 75 SWITCHING TIME (ns) 1.6 td(off) 1000 tf 100 10 85 VCE = 600 V VGE = 15 V TJ = 150°C IC = 20 A 5 15 25 35 45 55 65 75 Rg, GATE RESISTOR (W) Rg, GATE RESISTOR (W) Figure 13. Switching Loss vs. Rg Figure 14. Switching Time vs. Rg 1.6 85 1000 1.2 Eoff 1 0.8 0.6 IC = 20 A VGE = 15 V TJ = 150°C Rg = 10 W 0.4 0.2 SWITCHING TIME (ns) SWITCHING LOSS (mJ) 1.4 td(off) tf 100 IC = 20 A VGE = 15 V TJ = 150°C Rg = 10 W 10 275 325 0 250 300 350 400 450 500 550 600 650 700 750 800 Figure 16. Switching Time vs. VCE 100 ms 0.01 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 1000 100 50 ms dc operation Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 0.1 1 675 725 775 Figure 15. Switching Loss vs. VCE 1 ms 1 575 625 VCE, COLLECTOR−EMITTER VOLTAGE (V) 1000 10 375 425 475 525 VCE, COLLECTOR−EMITTER VOLTAGE (V) 10 100 VGE = 15 V, TC = 125°C 100 10 1 1000 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Safe Operating Area Figure 18. Reverse Bias Safe Operating Area http://onsemi.com 5 NGTB20N120IHRWG TYPICAL CHARACTERISTICS 140 1500 120 1450 Ipk (A) 100 80 V(BR)CES (V) TC = 80°C TC = 110°C 60 40 20 VCE = 600 V, TJ ≤ 175°C, Rgate = 10 W, VGE = 0/15 V, Tcase = 80°C or 110°C (as noted), D = 0.5 0 0.01 0.1 1 10 1400 1350 1300 1250 100 1200 −40 1000 −15 10 35 60 85 110 135 FREQUENCY (kHz) TJ, JUNCTION TEMPERATURE (°C) Figure 19. Collector Current vs. Switching Frequency Figure 20. Typical V(BR)CES vs. Temperature 1 RqJC = 0.392 50% Duty Cycle R(t) (°C/W) 0.1 20% Junction R1 10% 5% 0.01 Rn C2 Cn Ci = ti/Ri 2% C1 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.001 0.000001 R2 0.00001 0.0001 0.001 0.01 PULSE TIME (sec) Figure 21. IGBT Transient Thermal Impedance http://onsemi.com 6 0.1 Case Ri (°C/W) ti (sec) 0.04597 0.000101 0.009460 0.004201 0.020965 0.040205 0.003094 0.037895 0.016194 0.000100 0.246889 0.000218 0.031311 0.001057 0.007527 0.004770 0.007965 0.323174 0.083449 0.617513 316.228 0.405040 1 10 NGTB20N120IHRWG Figure 22. Test Circuit for Switching Characteristics http://onsemi.com 7 NGTB20N120IHRWG Figure 23. Definition of Turn On Waveform http://onsemi.com 8 NGTB20N120IHRWG Figure 24. Definition of Turn Off Waveform http://onsemi.com 9 NGTB20N120IHRWG PACKAGE DIMENSIONS TO−247 CASE 340AL ISSUE A E E2/2 B A NOTE 4 SEATING PLANE Q E2 D 2 B A 4 DIM A A1 b b2 b4 c D E E2 e L L1 P Q S 3 L1 NOTE 5 L 2X b2 c b4 3X e b 0.25 A1 NOTE 7 M B A M NOTE 6 S NOTE 3 1 M P A NOTE 4 0.635 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. SLOT REQUIRED, NOTCH MAY BE ROUNDED. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. 6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91. 7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1. M MILLIMETERS MIN MAX 4.70 5.30 2.20 2.60 1.00 1.40 1.65 2.35 2.60 3.40 0.40 0.80 20.30 21.40 15.50 16.25 4.32 5.49 5.45 BSC 19.80 20.80 3.50 4.50 3.55 3.65 5.40 6.20 6.15 BSC ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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