NGTB25N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. www.onsemi.com Features • • • • • • 25 A, 1200 V VCEsat = 2.0 V Eoff = 0.60 mJ Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 10 ms Short Circuit Capability These are Pb−Free Devices C Typical Applications • Solar Inverter • Uninterruptible Power Inverter Supplies (UPS) • Welding G E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage VCES 1200 V Collector current @ TC = 25°C @ TC = 100°C IC Pulsed collector current, Tpulse limited by TJmax ICM Diode forward current @ TC = 25°C @ TC = 100°C IF Diode pulsed current, Tpulse limited by TJmax IFM 100 A Gate−emitter voltage Transient gate−emitter voltage (Tpulse = 5 ms, D < 0.10) VGE $20 ±30 V Power Dissipation @ TC = 25°C @ TC = 100°C PD A 50 25 G C 100 A E A 50 25 MARKING DIAGRAM 25N120FL2 AYWWG W 385 192 TSC 10 ms Operating junction temperature range TJ −55 to +175 °C Storage temperature range Tstg −55 to +175 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C Short Circuit Withstand Time VGE = 15 V, VCE = 500 V, TJ ≤ 150°C TO−247 CASE 340AL Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NGTB25N120FL2WG © Semiconductor Components Industries, LLC, 2015 December, 2015 − Rev. 1 1 Package Shipping TO−247 30 Units / Rail (Pb−Free) Publication Order Number: NGTB25N120FL2W/D NGTB25N120FL2WG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.39 °C/W Thermal resistance junction−to−case, for Diode RqJC 0.59 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 1200 − − V VGE = 15 V, IC = 25 A VGE = 15 V, IC = 25 A, TJ = 175°C VCEsat − − 2.00 2.40 2.40 − V STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage VGE = VCE, IC = 400 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 1200 V VGE = 0 V, VCE = 1200 V, TJ = 175°C ICES − − − 2.5 0.4 − mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 200 nA Input capacitance Cies − 4420 − pF Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Coes − 151 − Cres − 81 − Qg − 178 − Qge − 39 − Qgc − 83 − td(on) − 87 − Gate−emitter threshold voltage Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 600 V, IC = 25 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time tr − 28 − td(off) − 179 − tf − 136 − Eon − 1.95 − Eoff − 0.60 − Total switching loss Ets − 2.55 − Turn−on delay time td(on) − 84 − tr − 29 − td(off) − 185 − tf − 245 − Turn−off delay time Fall time Turn−on switching loss TJ = 25°C VCC = 600 V, IC = 25 A Rg = 10 W VGE = 0 V/ 15V Turn−off switching loss Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 150°C VCC = 600 V, IC = 25 A Rg = 10 W VGE = 0 V/ 15V ns mJ ns mJ Eon − 2.39 − Turn−off switching loss Eoff − 1.26 − Total switching loss Ets − 3.65 − VGE = 0 V, IF = 25 A VGE = 0 V, IF = 50 A, TJ = 175°C VF − − 2.10 2.30 2.60 − V TJ = 25°C IF = 25 A, VR = 400 V diF/dt = 200 A/ms trr − 154 − ns Qrr − 1.3 − mc Irrm − 15 − A DIODE CHARACTERISTIC Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NGTB25N120FL2WG TYPICAL CHARACTERISTICS 100 VGE = 13 V to 20 V 90 TJ = 25°C IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 100 80 70 11 V 60 50 10 V 40 30 9V 20 7V 10 0 8V 1 2 3 4 5 6 7 70 60 11 V 50 10 V 40 30 9V 20 8V 7V 10 0 8 1 2 3 4 5 7 6 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Output Characteristics Figure 2. Output Characteristics 8 45 100 VGE = 13 V to 20 V TJ = −55°C IC, COLLECTOR CURRENT (A) 90 80 70 11 V 60 50 40 10 V 30 20 9V 10 0 8V 0 1 2 3 4 5 40 35 30 25 20 15 TJ = 150°C 10 TJ = 25°C 5 0 6 7 8 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 10,000 4.0 IC = 50 A 3.5 Cies C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (A) VGE = 13 V to 20 V 80 0 0 VCE, COLLECTOR−EMITTER VOLTAGE (V) TJ = 150°C 90 3.0 IC = 25 A 2.5 2.0 IC = 15 A 1.5 1.0 1000 Coes 100 Cres 10 TJ = 25°C 0.5 0 −75 −50 −25 0 25 50 1 75 100 125 150 175 200 0 10 20 30 40 50 60 70 80 90 100 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance www.onsemi.com 3 NGTB25N120FL2WG TYPICAL CHARACTERISTICS 16 VGE, GATE−EMITTER VOLTAGE (V) IF, FORWARD CURRENT (A) 40 35 TJ = 25°C 30 TJ = 150°C 25 20 15 10 5 0 0.5 1.0 1.5 2.0 2.5 3.0 10 8 6 VCE = 600 V VGE = 25 V IC = 25 A 4 2 0 3.5 200 150 100 VF, FORWARD VOLTAGE (V) QG, GATE CHARGE (nC) Figure 8. Typical Gate Charge SWITCHING TIME (ns) 1000 VCE = 600 V VGE = 15 V IC = 25 A Rg = 10 W 2.5 50 Figure 7. Diode Forward Characteristics 3.0 SWITCHING LOSS (mJ) 12 0 0 Eon 2.0 1.5 Eoff 1.0 VCE = 600 V VGE = 15 V IC = 25 A Rg = 10 W tf td(off) td(on) 100 tr 0.5 0 10 20 40 60 80 100 120 140 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 9. Switching Loss vs. Temperature Figure 10. Switching Time vs. Temperature 5 1000 Eon VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W 4 0 160 3 SWITCHING TIME (ns) 0 SWITCHING LOSS (mJ) 14 Eoff 2 1 160 VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W tf td(off) 100 td(on) tr 0 0 10 20 30 40 50 10 60 0 10 20 30 40 50 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Switching Loss vs. IC Figure 12. Switching Time vs. IC www.onsemi.com 4 60 NGTB25N120FL2WG TYPICAL CHARACTERISTICS 1000 VCE = 600 V VGE = 15 V TJ = 150°C IC = 25 A 5 4 td(off) EON SWITCHING TIME (ns) SWITCHING LOSS (mJ) 6 3 2 EOFF tf td(on) 100 tr VCE = 600 V VGE = 15 V TJ = 150°C IC = 25 A 1 0 10 5 15 25 35 45 55 65 75 85 5 45 55 65 75 Rg, GATE RESISTOR (W) Figure 14. Switching Time vs. Rg 1000 VGE = 15 V TJ = 150°C IC = 25 A Rg = 10 W EON 2 SWITCHING TIME (ns) SWITCHING LOSS (mJ) 35 Rg, GATE RESISTOR (W) EOFF 1 0 VGE = 15 V TJ = 150°C IC = 25 A Rg = 10 W 85 tf td(off) 100 td(on) tr 10 350 400 450 500 550 600 650 700 750 350 400 800 450 500 550 600 650 700 750 800 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Loss vs. VCE Figure 16. Switching Time vs. VCE 1000 1000 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 25 Figure 13. Switching Loss vs. Rg 4 3 15 100 10 dc operation 50 ms 100 ms Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 1 0.1 1 10 100 1 ms 1000 100 10 VGE = 15 V, TC = 125°C 1 10k 1 10 100 1000 10k VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Safe Operating Area Figure 18. Reverse Bias Safe Operating Area www.onsemi.com 5 NGTB25N120FL2WG TYPICAL CHARACTERISTICS SQUARE−WAVE PEAK R(t) (°C/W) 1 50% Duty Cycle RqJC = 0.39 0.1 20% 10% 5% R1 Junction R2 Rn Case 2% 0.01 C1 0.001 0.000001 0.00001 0.001 0.0001 0.01 Ci (J/°C) 0.000294 0.001568 0.010366 0.002294 0.001409 0.070949 0.048322 0.0065442 0.244018 0.4098053 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.0001 Cn C2 Ri (°C/W) 0.003402 0.002017 0.000965 0.013782 0.1 1 ON−PULSE WIDTH (s) Figure 19. IGBT Die Self−heating Square−wave Duty Cycle Transient Thermal Response SQUARE−WAVE PEAK R(t) (°C/W) 1 RqJC = 0.59 50% Duty Cycle 20% 0.1 Junction R1 R2 Rn C1 C2 Cn 10% 5% 2% 0.01 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.000001 0.00001 0.0001 0.001 0.01 Case Ri (°C/W) Ci (J/°C) 0.003402 0.002017 0.000965 0.013782 0.001409 0.048322 0.244018 0.000294 0.001568 0.010366 0.002294 0.070949 0.006544 0.409805 0.1 ON−PULSE WIDTH (s) Figure 20. Diode Die Self−heating Square−wave Duty Cycle Transient Thermal Response www.onsemi.com 6 1 NGTB25N120FL2WG 120 100 Ipk (A) 80 TC = 80°C 60 TC = 110°C 40 20 0 0.01 0.1 1 Freq (kHz) 10 Figure 21. Collector Current vs. Switching Frequency Figure 22. Test Circuit for Switching Characteristics www.onsemi.com 7 100 1000 NGTB25N120FL2WG Figure 23. Definition of Turn On Waveform www.onsemi.com 8 NGTB25N120FL2WG Figure 24. Definition of Turn Off Waveform www.onsemi.com 9 NGTB25N120FL2WG PACKAGE DIMENSIONS TO−247 CASE 340AL ISSUE A B A NOTE 4 E SEATING PLANE 0.635 M P A Q E2 D S NOTE 3 1 2 4 DIM A A1 b b2 b4 c D E E2 e L L1 P Q S 3 L1 NOTE 5 L 2X b2 c b4 3X e A1 b 0.25 NOTE 7 M B A M NOTE 6 E2/2 NOTE 4 B A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. SLOT REQUIRED, NOTCH MAY BE ROUNDED. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. 6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91. 7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1. M MILLIMETERS MIN MAX 4.70 5.30 2.20 2.60 1.00 1.40 1.65 2.35 2.60 3.40 0.40 0.80 20.30 21.40 15.50 16.25 4.32 5.49 5.45 BSC 19.80 20.80 3.50 4.50 3.55 3.65 5.40 6.20 6.15 BSC ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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