NGTB15N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. http://onsemi.com 15 A, 1200 V VCEsat = 2.10 V Eoff = 0.34 mJ Features • • • • • Extremely Efficient Trench with Fieldstop Technology Low Switching Loss Reduces System Power Dissipation Optimized for Low Case Temperature in IH Cooker Application Reliable and Cost Effective Single Die Solution These are Pb−Free Devices C Typical Applications • Inductive Heating • Consumer Appliances • Soft Switching G E ABSOLUTE MAXIMUM RATINGS Symbol Value Unit Collector−emitter voltage Rating VCES 1200 V Collector current @ TC = 25°C @ TC = 100°C IC Pulsed collector current, Tpulse limited by TJmax ICM Diode forward current @ TC = 25°C @ TC = 100°C IF Diode pulsed current, Tpulse limited by TJmax IFM 60 A Gate−emitter voltage Transient Gate−emitter voltage (Tpulse = 5 ms, D < 0.10) VGE $20 $25 V Power Dissipation @ TC = 25°C @ TC = 100°C PD Operating junction temperature range TJ −40 to +175 °C Storage temperature range Tstg −55 to +175 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C A 30 15 G 60 A C TO−247 CASE 340AL E A 30 15 MARKING DIAGRAM 15N120IHR AYWWG W 333 166 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NGTB15N120IHRWG © Semiconductor Components Industries, LLC, 2013 September, 2013 − Rev. 0 1 Package Shipping TO−247 30 Units / Rail (Pb−Free) Publication Order Number: NGTB15N120IHR/D NGTB15N120IHRWG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case Rating RqJC 0.45 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 1200 − − V VGE = 15 V, IC = 15 A VGE = 15 V, IC = 15 A, TJ = 175°C VCEsat − − 2.10 2.30 2.50 − V Gate−emitter threshold voltage VGE = VCE, IC = 250 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 1200 V ICES − − 0.1 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V, VCE = 0 V IGES − − 100 nA Cies − 3690 − pF Coes − 85 − Cres − 69 − Gate charge total Qg − 160 − Gate to emitter charge Qge − 27 − Qgc − 70 − TJ = 25°C VCC = 600 V, IC = 15 A Rg = 10 W VGE = 0 V/ 15V td(off) − 170 − tf − 177 − Eoff − 0.34 − mJ TJ = 150°C VCC = 600 V, IC = 15 A Rg = 10 W VGE = 0 V/ 15V td(off) − 190 − ns tf − 255 − Eoff − 0.74 − mJ VGE = 0 V, IF = 15 A, TJ = 25°C VGE = 0 V, IF = 15 A, TJ = 175°C VF − − 1.75 2.50 2.0 − V STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 10 kHz Reverse transfer capacitance VCE = 600 V, IC = 15 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−off delay time Fall time Turn−off switching loss Turn−off delay time Fall time Turn−off switching loss ns DIODE CHARACTERISTIC Forward voltage http://onsemi.com 2 NGTB15N120IHRWG TYPICAL CHARACTERISTICS 50 60 TJ = 25°C VGE = 10 V to 20 V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 60 9V 40 30 8V 20 10 0 7V 0 1 2 3 4 5 7 6 30 8V 20 7V 10 0 1 2 3 4 5 7 6 Figure 2. Output Characteristics IC, COLLECTOR CURRENT (A) 9V 30 20 8V 10 7V 1 2 3 4 5 7 6 8 60 TJ = −40°C 50 40 30 TJ = 150°C 20 TJ = 25°C 10 0 8 0 1 2 3 4 6 5 7 8 9 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 3.00 10000 IC = 30 A 10 Cies 2.50 IC = 15 A 2.00 IC = 5 A 1.50 1.00 C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (A) VCE, COLLECTOR−EMITTER VOLTAGE (V) 40 Figure 1. Output Characteristics VGE = 10 V to 20 V 0 TJ = 150°C VCE, COLLECTOR−EMITTER VOLTAGE (V) 40 0 9V VCE, COLLECTOR−EMITTER VOLTAGE (V) 60 50 50 0 8 VGE = 10 V to 20 V 1000 100 Coes Cres 10 0.50 0.00 −75 −50 −25 0 25 50 1 75 100 125 150 175 200 TJ = 25°C 0 10 20 30 40 50 60 70 80 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. VCE(sat) vs TJ Figure 6. Typical Capacitance http://onsemi.com 3 90 100 NGTB15N120IHRWG TYPICAL CHARACTERISTICS 16 VGE, GATE−EMITTER VOLTAGE (V) IF, FORWARD CURRENT (A) 70 60 50 TJ = 25°C 40 30 20 10 0 TJ = 150°C 0 0.5 1.0 1.5 2.0 2.5 3.0 10 8 6 4 VCE = 600 V VGE = 15 V IC = 15 A 2 0 0 50 75 100 125 150 175 QG, GATE CHARGE (nC) Figure 8. Typical Gate Charge 1000 Eoff 0.5 0.4 0.3 0.2 200 VCE = 600 V VGE = 15 V IC = 15 A Rg = 10 W SWITCHING TIME (ns) 0.6 25 VF, FORWARD VOLTAGE (V) VCE = 600 V VGE = 15 V IC = 15 A Rg = 10 W 0.7 td(off) tf 0.1 0 0 1.8 20 40 60 80 100 1.4 1.2 140 100 160 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 9. Switching Loss vs. Temperature Figure 10. Switching Time vs. Temperature 1000 VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W 1.6 120 Eoff 1.0 0.8 0.6 0.4 160 VCE = 600 V VGE = 15 V IC = 15 A Rg = 10 W SWITCHING TIME (ns) SWITCHING LOSS (mJ) VCE = 600 V 12 Figure 7. Diode Forward Characteristics 0.8 SWITCHING LOSS (mJ) 14 td(off) tf 0.2 0 5 10 15 20 25 30 35 100 40 5 10 15 20 25 30 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Switching Loss vs. IC Figure 12. Switching Time vs. IC http://onsemi.com 4 35 40 NGTB15N120IHRWG TYPICAL CHARACTERISTICS 1.6 1000 1.2 1.0 Eoff 0.8 0.6 VCE = 600 V VGE = 15 V TJ = 150°C IC = 15 A 0.4 0.2 0 5 15 25 35 45 55 65 75 td(off) SWITCHING TIME (ns) SWITCHING LOSS (mJ) 1.4 tf 100 5 85 45 55 65 Figure 14. Switching Time vs. Rg 75 85 1000 VCE = 600 V TJ = 150°C IC = 15 A Rg = 10 W 0.8 SWITCHING TIME (ns) SWITCHING LOSS (mJ) 35 Figure 13. Switching Loss vs. Rg 0.9 Eoff 0.7 0.6 0.5 0.4 VCE = 600 V TJ = 150°C IC = 15 A Rg = 10 W 0.3 0.2 0.1 0 350 400 450 500 550 600 650 700 750 td(off) tf 100 350 800 400 450 500 550 600 650 700 750 800 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Loss vs. VCE Figure 16. Switching Time vs. VCE 1000 1000 100 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 25 Rg, GATE RESISTOR (W) 1.0 50 ms 100 ms 10 dc operation 1 ms 1 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 0.1 0.01 15 Rg, GATE RESISTOR (W) 1 10 100 100 10 1 1000 VGE = 15 V, TC = 125°C 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Safe Operating Area Figure 18. Reverse Bias Safe Operating Area http://onsemi.com 5 NGTB15N120IHRWG TYPICAL CHARACTERISTICS 1550 70 1500 60 TC = 110°C 1450 V(BR)CES (V) Ipk (A) 50 TC = 80°C 40 VCE = 600 V, TJ ≤ 175°C, Rgate = 10 W, 30 V = 0/15 V, T GE case = 80°C or 110°C (as noted), D = 0.5 20 1400 1350 1300 1250 10 0 0.01 0.1 1 10 100 1200 −40 1000 −15 10 35 60 85 110 135 FREQUENCY (kHz) TJ, JUNCTION TEMPERATURE (°C) Figure 19. Collector Current vs. Switching Frequency Figure 20. Typical V(BR)CES vs. Temperature SQUARE−WAVE PEAK R(t) (°C/W) 1 50% Duty Cycle 0.1 0.01 RqJA = 0.446 20% 10% R1 Junction 5% R2 Rn Case 2% C1 0.001 0.0001 1E−06 Ci (J/°C) 0.08113 0.118279 0.115034 0.130170 0.001355 0.003898 0.008455 0.027490 0.076823 73.79876 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 1E−05 Cn C2 Ri (°C/W) 0.0001 0.001 0.01 ON−PULSE WIDTH (s) Figure 21. IGBT Transient Thermal Impedance http://onsemi.com 6 0.1 1 NGTB15N120IHRWG Figure 22. Test Circuit for Switching Characteristics http://onsemi.com 7 NGTB15N120IHRWG Figure 23. Definition of Turn On Waveform http://onsemi.com 8 NGTB15N120IHRWG Figure 24. Definition of Turn Off Waveform http://onsemi.com 9 NGTB15N120IHRWG PACKAGE DIMENSIONS TO−247 CASE 340AL ISSUE A E E2/2 B A NOTE 4 SEATING PLANE A Q E2 NOTE 4 D 0.635 2 B A 4 DIM A A1 b b2 b4 c D E E2 e L L1 P Q S 3 L1 NOTE 5 L 2X b2 c b4 3X e b 0.25 A1 NOTE 7 M B A M NOTE 6 S NOTE 3 1 M P NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. SLOT REQUIRED, NOTCH MAY BE ROUNDED. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. 6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91. 7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1. M MILLIMETERS MIN MAX 4.70 5.30 2.20 2.60 1.00 1.40 1.65 2.35 2.60 3.40 0.40 0.80 20.30 21.40 15.50 16.25 4.32 5.49 5.45 BSC 19.80 20.80 3.50 4.50 3.55 3.65 5.40 6.20 6.15 BSC ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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