NGTB40N120FL2W D

NGTB40N120FL2WG
IGBT - Field Stop II
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. The IGBT is well suited
for UPS and solar applications. Incorporated into the device is a soft
and fast co−packaged free wheeling diode with a low forward voltage.
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Features
•
•
•
•
•
•
40 A, 1200 V
VCEsat = 2.0 V
Eoff = 1.10 mJ
Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for High Speed Switching
10 ms Short Circuit Capability
These are Pb−Free Devices
C
Typical Applications
• Solar Inverter
• Uninterruptible Power Inverter Supplies (UPS)
• Welding
G
E
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
VCES
1200
V
Collector current
@ TC = 25°C
@ TC = 100°C
IC
Pulsed collector current, Tpulse
limited by TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
A
80
40
ICM
G
C
200
TO−247
CASE 340AL
E
A
IF
A
80
40
Diode pulsed current, Tpulse limited
by TJmax
IFM
200
A
Gate−emitter voltage
Transient gate−emitter voltage
(Tpulse = 5 ms, D < 0.10)
VGE
±20
±30
V
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
Short Circuit Withstand Time
VGE = 15 V, VCE = 500 V, TJ ≤ 150°C
TSC
10
ms
Operating junction temperature range
TJ
−55 to +175
°C
Storage temperature range
Tstg
−55 to +175
°C
Lead temperature for soldering, 1/8″
from case for 5 seconds
TSLD
260
°C
MARKING DIAGRAM
40N120FL2
AYWWG
W
535
267
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
NGTB40N120FL2WG
© Semiconductor Components Industries, LLC, 2015
April, 2015 − Rev. 6
1
Package
Shipping
TO−247 30 Units / Rail
(Pb−Free)
Publication Order Number:
NGTB40N120FL2W/D
NGTB40N120FL2WG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction−to−case, for IGBT
Rating
RqJC
0.28
°C/W
Thermal resistance junction−to−case, for Diode
RqJC
0.5
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
1200
−
−
V
VGE = 15 V, IC = 40 A
VGE = 15 V, IC = 40 A, TJ = 175°C
VCEsat
−
−
2.00
2.40
2.40
−
V
VGE = VCE, IC = 400 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 175°C
ICES
−
−
−
−
0.1
2
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V , VCE = 0 V
IGES
−
−
200
nA
Cies
−
7385
−
pF
VCE = 20 V, VGE = 0 V, f = 1 MHz
Coes
−
230
−
Parameter
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Cres
−
140
−
Gate charge total
Qg
−
313
−
Gate to emitter charge
Qge
−
61
−
Qgc
−
151
−
td(on)
−
116
−
tr
−
42
−
td(off)
−
286
−
tf
−
121
−
Eon
−
3.4
−
Turn−off switching loss
Eoff
−
1.1
−
Total switching loss
Ets
−
4.5
−
Turn−on delay time
td(on)
−
111
−
tr
−
43
−
td(off)
−
304
−
VCE = 600 V, IC = 40 A, VGE = 15 V
Gate to collector charge
nC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 25°C
VCC = 600 V, IC = 40 A
Rg = 10 W
VGE = 0 V/ 15V
Rise time
Turn−off delay time
Fall time
TJ = 175°C
VCC = 600 V, IC = 40 A
Rg = 10 W
VGE = 0 V/ 15 V
ns
mJ
ns
tf
−
260
−
Eon
−
4.4
−
Turn−off switching loss
Eoff
−
2.5
−
Total switching loss
Ets
−
6.9
−
VF
−
−
2.00
2.30
2.60
−
V
Turn−on switching loss
mJ
DIODE CHARACTERISTIC
Forward voltage
Reverse recovery time
Reverse recovery charge
VGE = 0 V, IF = 40 A
VGE = 0 V, IF = 50 A, TJ = 175°C
TJ = 25°C
IF = 40 A, VR = 400 V
diF/dt = 200 A/ms
Reverse recovery current
Reverse recovery time
Reverse recovery charge
TJ = 175°C
IF = 40 A, VR = 400 V
diF/dt = 200 A/ms
Reverse recovery current
trr
−
240
−
ns
Qrr
−
2.5
−
mc
Irrm
−
18
−
A
trr
−
392
−
ns
Qrr
−
5.36
−
mc
Irrm
−
25.80
−
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NGTB40N120FL2WG
TYPICAL CHARACTERISTICS
160
TJ = 25°C
140
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
160
VGE = 20 V
to 13 V
120
100
11 V
80
10 V
60
40
9V
20
7V
8V
0
0
1
2
3
4
5
7
6
120
100
11 V
80
10 V
60
9V
40
8V
20
7V
8
1
2
3
4
5
6
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
8
160
140
IC, COLLECTOR CURRENT (A)
TJ = −55°C
VGE = 20 V
to 13 V
120
11 V
100
80
60
10 V
40
7V
20
9V
8V
0
0
1
2
3
4
5
6
7
140
120
100
80
60
40
TJ = 150°C
20
0
0
8
TJ = 25°C
1
2
3
4
5
6
7
8
9 10 11 12 13
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
3.50
4.0
IC = 75 A
3.00
VF, FORWARD VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
VGE = 20 V
to 13 V
0
160
VCE, COLLECTOR−EMITTER VOLTAGE (V)
TJ = 150°C
140
IC = 40 A
2.50
2.00
IC = 20 A
1.50
1.00
0.50
0.00
−75 −50 −25
0
25
50
3.5
IF = 80 A
3.0
2.5
IF = 40 A
2.0
IF = 20 A
1.5
1.0
−75 −50 −25
75 100 125 150 175 200
0
25
50
75 100 125 150 175 200
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. VCE(sat) vs TJ
Figure 6. VF vs. TJ
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3
NGTB40N120FL2WG
TYPICAL CHARACTERISTICS
100000
70
IF, FORWARD CURRENT (A)
C, CAPACITANCE (pF)
TJ = 25°C
Cies
10000
1000
Coes
100
Cres
10
1
10
20
30
40
60
50
70
30
20
10
90 100
80
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VF, FORWARD VOLTAGE (V)
Figure 7. Typical Capacitance
Figure 8. Diode Forward Characteristics
5
14
4.5
10
8
6
4
VCE = 600 V
VGE = 15 V
IC = 40 A
2
0
50
100
200
150
250
300
4.0
Eon
4
VCE = 600 V
12
SWITCHING LOSS (mJ)
VGE, GATE−EMITTER VOLTAGE (V)
TJ = 150°C
40
16
0
TJ = 25°C
50
0
0
3.5
3
2.5
Eoff
2
1.5
VCE = 600 V
VGE = 15 V
IC = 40 A
Rg = 10 W
1
0.5
0
350
0
20
40
60
80
100
120
140
QG, GATE CHARGE (nC)
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Typical Gate Charge
Figure 10. Switching Loss vs. Temperature
1000
160
12
td(off)
tf
100
td(on)
tr
VCE = 600 V
VGE = 15 V
IC = 40 A
Rg = 10 W
10
0
20
40
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
10
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
60
60
80
100
120
140
8
Eon
6
Eoff
4
2
0
160
5
15
25
35
45
55
65
TJ, JUNCTION TEMPERATURE (°C)
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Time vs. Temperature
Figure 12. Switching Loss vs. IC
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4
75
85
NGTB40N120FL2WG
TYPICAL CHARACTERISTICS
14
1000
VCE = 600 V
VGE = 15 V
TJ = 150°C
IC = 40 A
td(off)
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
12
tf
td(on)
100
tr
10
5
15
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
25
35
45
55
65
75
8
6
4
Eoff
0
5
85
15
25
35
55
45
Rg, GATE RESISTOR (W)
Figure 13. Switching Time vs. IC
Figure 14. Switching Loss vs. Rg
td(off)
100
tr
5
Eon
4
3
Eoff
2
VGE = 15 V
TJ = 150°C
IC = 40 A
Rg = 10 W
1
15
25
35
45
55
65
75
0
350
85
400
450
500
550
600 650
700
750 800
Rg, GATE RESISTOR (W)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Time vs. Rg
Figure 16. Switching Loss vs. VCE
1000
1000
IC, COLLECTOR CURRENT (A)
SWITCHING TIME (ns)
85
6
td(on)
td(off)
tf
td(on)
100
tr
10
350
75
7
VCE = 600 V
VGE = 15 V
TJ = 150°C
IC = 40 A
tf
10
5
65
IC, COLLECTOR CURRENT (A)
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
Eon
2
10000
1000
10
VGE = 15 V
TJ = 150°C
IC = 40 A
Rg = 10 W
400
450
500
550
600 650
700
100
50 ms
10
1 ms
1
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
0.1
0.01
750 800
100 ms
dc operation
1
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Switching Time vs. VCE
Figure 18. Safe Operating Area
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5
10000
NGTB40N120FL2WG
TYPICAL CHARACTERISTICS
650
10
VGE = 15 V, TC = 125°C
1
1
10
550
450
TJ = 175°C, IF = 40 A
350
250
150
TJ = 25°C, IF = 40 A
50
100
1000
10000
100
300
500
700
900
1100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
diF/dt, DIODE CURRENT SLOPE (A/m)
Figure 19. Reverse Bias Safe Operating Area
Figure 20. trr vs. diF/dt (VR = 400 V)
Irm, REVERSE RECOVERY CURRENT (A)
Qrr, REVERSE RECOVERY CHARGE (mC)
trr, REVERSE RECOVERY TIME (ns)
100
6
TJ = 175°C, IF = 40 A
5
4
TJ = 25°C, IF = 40 A
3
2
1
0
100
300
500
700
900
1100
1300
60
TJ = 175°C, IF = 40 A
50
40
TJ = 25°C, IF = 40 A
30
20
10
0
100
300
500
700
900
1100
diF/dt, DIODE CURRENT SLOPE (A/m)
Figure 21. Qrr vs. diF/dt (VR = 400 V)
Figure 22. Irm vs. diF/dt (VR = 400 V)
250
VCE = 600 V, RG = 10 W, VGE = 0/15 V
200
TC = 80°C
TC = 80°C
TC = 110°C
150
100
50
0
0.01
0.1
1
10
100
FREQUENCY (kHz)
Figure 23. Collector Current vs. Switching
Frequency
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6
1300
70
diF/dt, DIODE CURRENT SLOPE (A/m)
Ipk (A)
IC, COLLECTOR CURRENT (A)
1000
1000
1300
NGTB40N120FL2WG
TYPICAL CHARACTERISTICS
SQUARE−WAVE PEAK R(t) (°C/W)
1
RqJC = 0.28
50% Duty Cycle
0.1
20%
10%
5%
0.01
R1
Junction
R2
Rn
Case
2%
C1
0.001
1E−05
Ci (J/°C)
0.006487
0.023120
0.061163
0.092651
1.252250
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.0001
1E−06
Cn
C2
Ri (°C/W)
0.048747
0.043252
0.051703
0.107932
0.025253
0.0001
0.001
0.01
0.1
1
ON−PULSE WIDTH (s)
Figure 24. IGBT Transient Thermal Impedance
SQUARE−WAVE PEAK R(t) (°C/W)
1
RqJC = 0.50
50% Duty Cycle
0.1
20%
10%
5%
2%
Junction R1
R2
Rn
C1
C2
Cn
0.01
Single Pulse
0.001
1E−06
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
1E−05
0.0001
0.001
0.01
ON−PULSE WIDTH (s)
Figure 25. Diode Transient Thermal Impedance
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7
Case
Ri (°C/W)
Ci (J/°C)
0.007703
0.010613
0.010097
0.032329
0.046791
0.044179
0.083870
0.000130
0.000942
0.003132
0.003093
0.006758
0.022635
0.119232
0.044938
0.703706
0.217376
0.460033
0.1
1
NGTB40N120FL2WG
Figure 26. Test Circuit for Switching Characteristics
Figure 27. Definition of Turn On Waveform
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8
NGTB40N120FL2WG
Figure 28. Definition of Turn Off Waveform
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9
NGTB40N120FL2WG
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE A
B
A
NOTE 4
E
SEATING
PLANE
0.635
M
P
A
Q
E2
D
S
NOTE 3
1
2
4
DIM
A
A1
b
b2
b4
c
D
E
E2
e
L
L1
P
Q
S
3
L1
NOTE 5
L
2X
b2
c
b4
3X
e
A1
b
0.25
NOTE 7
M
B A
M
NOTE 6
E2/2
NOTE 4
B A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
M
MILLIMETERS
MIN
MAX
4.70
5.30
2.20
2.60
1.00
1.40
1.65
2.35
2.60
3.40
0.40
0.80
20.30
21.40
15.50
16.25
4.32
5.49
5.45 BSC
19.80
20.80
3.50
4.50
3.55
3.65
5.40
6.20
6.15 BSC
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NGTB40N120FL2W/D