NGTB40N60FL2W D

NGTB40N60FL2WG
IGBT - Field Stop II
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. The IGBT is well suited
for UPS and solar applications. Incorporated into the device is a soft
and fast co−packaged free wheeling diode with a low forward voltage.
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Features
•
•
•
•
•
•
Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for High Speed Switching
5 ms Short−Circuit Capability
These are Pb−Free Devices
40 A, 600 V
VCEsat = 1.7 V
EOFF = 0.44 mJ
C
Typical Applications
• Solar Inverters
• Uninterruptible Power Supplies (UPS)
• Welding
G
E
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
VCES
600
V
Collector current
@ TC = 25°C
@ TC = 100°C
IC
Diode Forward Current
@ TC = 25°C
@ TC = 100°C
IF
A
80
40
A
80
40
Diode Pulsed Current
TPULSE Limited by TJ Max
IFM
160
A
Pulsed collector current, Tpulse
limited by TJmax
ICM
160
A
Short−circuit withstand time
VGE = 15 V, VCE = 400 V,
TJ ≤ +150°C
tSC
5
ms
Gate−emitter voltage
VGE
Transient gate−emitter voltage
(TPULSE = 5 ms, D < 0.10)
$20
V
$30
V
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
Operating junction temperature
range
TJ
−55 to +175
°C
Storage temperature range
Tstg
−55 to +175
°C
Lead temperature for soldering, 1/8″
from case for 5 seconds
TSLD
260
°C
July, 2015 − Rev. 1
C
E
MARKING DIAGRAM
40N60FL2
AYWWG
W
366
183
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2015
TO−247
CASE 340L
STYLE 4
G
1
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
NGTB40N60FL2WG
TO−247
(Pb−Free)
30 Units / Rail
Publication Order Number:
NGTB40N60FL2W/D
NGTB40N60FL2WG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction−to−case, for IGBT
Rating
RqJC
0.41
°C/W
Thermal resistance junction−to−case, for Diode
RqJC
1.00
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
600
−
−
V
VGE = 15 V, IC = 40 A
VGE = 15 V, IC = 40 A, TJ = 175°C
VCEsat
1.50
−
1.70
1.85
2.00
−
V
VGE = VCE, IC = 350 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 175°C
ICES
−
−
−
−
0.5
6.0
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V , VCE = 0 V
IGES
−
−
200
nA
Cies
−
4060
−
pF
VCE = 20 V, VGE = 0 V, f = 1 MHz
Coes
−
179
−
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
Reverse transfer capacitance
Cres
−
115
−
Gate charge total
Qg
−
170
−
Gate to emitter charge
Qge
−
41
−
Qgc
−
87
−
td(on)
−
84
−
tr
−
40
−
td(off)
−
177
−
tf
−
70
−
Eon
−
0.97
−
Turn−off switching loss
Eoff
−
0.44
−
Total switching loss
Ets
−
1.41
−
Turn−on delay time
td(on)
−
82
−
tr
−
40
−
td(off)
−
183
−
VCE = 480 V, IC = 40 A, VGE = 15 V
Gate to collector charge
nC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 25°C
VCC = 400 V, IC = 40 A
Rg = 10 W
VGE = 0 V/ 15 V
Rise time
Turn−off delay time
Fall time
TJ = 150°C
VCC = 400 V, IC = 40 A
Rg = 10 W
VGE = 0 V/ 15 V
tf
−
93
−
Eon
−
1.20
−
Turn−off switching loss
Eoff
−
0.76
−
Total switching loss
Ets
−
1.96
−
VF
1.50
−
2.20
2.40
2.90
−
Turn−on switching loss
ns
mJ
ns
mJ
DIODE CHARACTERISTIC
Forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGE = 0 V, IF = 40 A
VGE = 0 V, IF = 40 A, TJ = 175°C
TJ = 25°C
IF = 40 A, VR = 200 V
diF/dt = 200 A/ms
TJ = 175°C
IF = 40 A, VR = 400 V
diF/dt = 200 A/ms
V
trr
−
72
−
ns
Qrr
−
275
−
nC
Irrm
−
6.7
−
A
trr
−
158
−
ns
Qrr
−
980
−
nC
Irrm
−
8.5
−
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NGTB40N60FL2WG
TYPICAL CHARACTERISTICS
160
TJ = 25°C
140
13 V
120
100
80
11 V
60
10 V
40
7V
20
9V
8V
0
1
2
3
4
5
IC, COLLECTOR CURRENT (A)
VGE = 17 V
to 20 V
120
13 V
100
80
11 V
60
10 V
40
7V
9V
20
8V
6
7
0
8
1
2
3
4
5
6
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
120
TJ = −55°C
100
80
11 V
60
10 V
40
7V
20
9V
8V
0
1
2
3
4
8
160
13 V
VGE = 20 V
to 15 V
0
15 V
VCE, COLLECTOR−EMITTER VOLTAGE (V)
160
140
TJ = 150°C
140
0
IC, COLLECTOR CURRENT (A)
0
VCE, COLLECTOR−EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
VGE = 15 V
to 20 V
TJ = 25°C
140
120
100
TJ = 150°C
80
60
40
20
0
5
6
7
8
0
2
4
6
12
10
8
14
16
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
3.00
18
10,000
2.75
Cies
IC = 60 A
2.50
2.25
IC = 40 A
2.00
1.75
IC = 20 A
1.50
1.25
IC = 5 A
1.00
C, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (A)
160
1000
Coes
100
Cres
0.75
0.50
−75 −50 −25
0
25
50
10
75 100 125 150 175 200
TJ = 25°C
0
10
20
30
40
50
60
70
80
90 100
TJ, JUNCTION TEMPERATURE (°C)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs. TJ
Figure 6. Typical Capacitance
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3
NGTB40N60FL2WG
TYPICAL CHARACTERISTICS
20
VGE, GATE−EMITTER VOLTAGE (V)
110
IF, FORWARD CURRENT (A)
100
TJ = 25°C
90
80
70
TJ = 150°C
60
50
40
30
20
10
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
14
12
10
8
6
VCE = 480 V
VGE = 15 V
IC = 40 A
4
2
0
4.0
50
100
VF, FORWARD VOLTAGE (V)
QG, GATE CHARGE (nC)
Figure 8. Typical Gate Charge
1.50
1.25
SWITCHING TIME (ns)
1000
VCE = 400 V
VGE = 15 V
IC = 40 A
Rg = 10 W
Eon
1.00
0.75
Eoff
0.50
200
150
Figure 7. Diode Forward Characteristics
1.75
SWITCHING LOSS (mJ)
16
0
0
VCE = 400 V
VGE = 15 V
IC = 40 A
Rg = 10 W
td(off)
tf
100
td(on)
tr
0.25
0
10
0
20
40
60
80
100
120
140
0
160
20
40
60
80
100
120
140
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Loss vs. Temperature
Figure 10. Switching Time vs. Temperature
160
1000
4.5
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
3.5
Eon
SWITCHING TIME (ns)
4.0
SWITCHING LOSS (mJ)
18
3.0
2.5
2.0
Eoff
1.5
1.0
td(off)
tf
100
td(on)
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
tr
0.5
0
5
15
25
35
45
55
65
75
10
85
5
15
25
35
45
55
65
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. IC
Figure 12. Switching Time vs. IC
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4
75
85
NGTB40N60FL2WG
TYPICAL CHARACTERISTICS
1000
VCE = 400 V
VGE = 15 V
TJ = 150°C
IC = 40 A
SWITCHING LOSS (mJ)
4.5
4.0
3.5
SWITCHING TIME (ns)
5.0
Eon
3.0
2.5
2.0
Eoff
1.5
1.0
0.5
0
15
25
35
45
55
65
tr
100
VCE = 400 V
VGE = 15 V
TJ = 150°C
IC = 40 A
75
5
15
25
35
45
55
Rg, GATE RESISTOR (W)
Rg, GATE RESISTOR (W)
Figure 14. Switching Time vs. Rg
SWITCHING TIME (ns)
1000
VGE = 15 V
TJ = 150°C
IC = 40 A
Rg = 10 W
2.0
Eon
1.5
Eoff
1.0
0.5
0
150 200
65
Figure 13. Switching Loss vs. Rg
2.5
SWITCHING LOSS (mJ)
td(on)
tf
10
5
75
85
VGE = 15 V
TJ = 150°C
IC = 40 A
Rg = 10 W
td(off)
td(on)
100
tf
tr
10
250
300
350
400
450
500
175
550 600
225
275
325
375
425
475
525 575
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE
Figure 16. Switching Time vs. VCE
1000
1000
100
dc operation
10
50 ms
100 ms
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
1
0.1
1
10
1 ms
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
td(off)
100
10
VGE = 15 V, TC = 150°C
1
100
1000
1
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area
Figure 18. Reverse Bias Safe Operating Area
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5
NGTB40N60FL2WG
Qrr, REVERSE RECOVERY CHARGE (mC)
TYPICAL CHARACTERISTICS
140
TJ = 175°C, IF = 40 A
120
100
80
TJ = 25°C, IF = 40 A
60
40
Irm, REVERSE RECOVERY CURRENT (A)
100
300
500
700
900
1100
2.0
1.5
TJ = 175°C, IF = 40 A
1.0
TJ = 25°C, IF = 40 A
0.5
0
100
300
500
700
900
diF/dt, DIODE CURRENT SLOPE (A/ms)
diF/dt, DIODE CURRENT SLOPE (A/ms)
Figure 19. trr vs. diF/dt
(VR = 400 V)
Figure 20. Qrr vs. diF/dt
(VR = 400 V)
30
1100
3.5
VF, FORWARD VOLTAGE (V)
trr, REVERSE RECOVERY TIME (ns)
160
TJ = 175°C, IF = 40 A
20
TJ = 25°C, IF = 40 A
10
0
100
300
500
700
900
1100
IF = 60 A
3.0
IF = 40 A
2.5
2.0
IF = 20 A
1.5
1.0
−75 −50 −25
0
25
50
75 100 125 150 175 200
diF/dt, DIODE CURRENT SLOPE (A/ms)
TJ, JUNCTION TEMPERATURE (°C)
Figure 21. Irm vs. diF/dt
(VR = 400 V)
Figure 22. VF vs. TJ
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NGTB40N60FL2WG
TYPICAL CHARACTERISTICS
SQUARE−WAVE PEAK R(t) (°C/W)
1
RqJC = 0.41
50% Duty Cycle
0.1 20%
10%
5%
R1
Junction
R2
Rn
Case
Ri (°C/W)
Ci (J/°C)
0.0537
0.0350
0.0426
0.1183
0.1455
0.0019
0.0090
0.0235
0.0267
0.0687
0.0191
1.6573
2%
0.01
C1
0.001
Cn
C2
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.0001
0.000001
0.00001
0.001
0.0001
0.01
0.1
1
ON−PULSE WIDTH (s)
Figure 23. IGBT Transient Thermal Impedance
SQUARE−WAVE PEAK R(t) (°C/W)
1
50% Duty Cycle
RqJC = 1.00
20%
10%
0.1
Junction R1
R2
Rn
C1
C2
Cn
5%
2%
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
ON−PULSE WIDTH (s)
Figure 24. Diode Transient Thermal Impedance
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7
Case
Ri (°C/W)
Ci (J/°C)
0.015509
0.020310
0.022591
0.050667
0.093366
0.195285
0.133203
0.173839
0.251384
0.039982
0.000064
0.000492
0.001400
0.001974
0.003387
0.005121
0.023740
0.057525
0.125795
2.501137
0.1
1
NGTB40N60FL2WG
Figure 25. Test Circuit for Switching Characteristics
Figure 26. Definition of Turn On Waveform
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8
NGTB40N60FL2WG
Figure 27. Definition of Turn Off Waveform
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9
NGTB40N60FL2WG
PACKAGE DIMENSIONS
TO−247
CASE 340L−02
ISSUE F
−T−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
C
−B−
E
U
L
N
4
A
−Q−
1
2
0.63 (0.025)
3
M
T B
M
P
−Y−
K
W
J
F 2 PL
D 3 PL
0.25 (0.010)
M
Y Q
MILLIMETERS
MIN
MAX
20.32
21.08
15.75
16.26
4.70
5.30
1.00
1.40
1.90
2.60
1.65
2.13
5.45 BSC
1.50
2.49
0.40
0.80
19.81
20.83
5.40
6.20
4.32
5.49
--4.50
3.55
3.65
6.15 BSC
2.87
3.12
STYLE 4:
PIN 1.
2.
3.
4.
H
G
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
U
W
INCHES
MIN
MAX
0.800
8.30
0.620
0.640
0.185
0.209
0.040
0.055
0.075
0.102
0.065
0.084
0.215 BSC
0.059
0.098
0.016
0.031
0.780
0.820
0.212
0.244
0.170
0.216
--0.177
0.140
0.144
0.242 BSC
0.113
0.123
GATE
COLLECTOR
EMITTER
COLLECTOR
S
ON Semiconductor and the
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NGTB40N60FL2W/D