NGTB50N60FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. www.onsemi.com Features • • • • • • 50 A, 600 V VCEsat = 1.80 V EOFF = 0.46 mJ Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 5 ms Short−Circuit Capability This is a Pb−Free Device C Typical Applications • Solar Inverters • Uninterruptible Power Supplies (UPS) • Welding G E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage VCES 600 V Collector current @ TC = 25°C @ TC = 100°C IC Diode Forward Current @ TC = 25°C @ TC = 100°C IF A 100 50 C MARKING DIAGRAM Diode Pulsed Current TPULSE Limited by TJ Max IFM 200 A Pulsed collector current, Tpulse limited by TJmax ICM 200 A Short−circuit withstand time VGE = 15 V, VCE = 400 V, TJ ≤ +150°C tSC 5 ms Gate−emitter voltage VGE $20 V V $30 Power Dissipation @ TC = 25°C @ TC = 100°C PD Operating junction temperature range TJ −55 to +175 °C Storage temperature range Tstg −55 to +175 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C July, 2015 − Rev. 3 50N60FL2 AYWWG W 417 208 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2015 E A 100 50 Transient gate−emitter voltage (TPULSE = 5 ms, D < 0.10) TO−247 CASE 340L STYLE 4 G 1 A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device Package Shipping NGTB50N60FL2WG TO−247 (Pb−Free) 30 Units / Rail Publication Order Number: NGTB50N60FL2W/D NGTB50N60FL2WG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.36 °C/W Thermal resistance junction−to−case, for Diode RqJC 0.60 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 600 − − V VGE = 15 V, IC = 50 A VGE = 15 V, IC = 50 A, TJ = 175°C VCEsat 1.50 − 1.80 2.19 2.00 − V VGE = VCE, IC = 350 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 150°C ICES − − − − 0.5 4.0 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 200 nA Cies − 5328 − pF VCE = 20 V, VGE = 0 V, f = 1 MHz Coes − 252 − STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance Reverse transfer capacitance Cres − 148 − Gate charge total Qg − 220 − Gate to emitter charge Qge − 52 − Qgc − 116 − td(on) − 100 − tr − 47 − td(off) − 237 − tf − 67 − Eon − 1.50 − Turn−off switching loss Eoff − 0.46 − Total switching loss Ets − 1.96 − Turn−on delay time td(on) − 90 − tr − 49 − td(off) − 245 − VCE = 480 V, IC = 50 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 25°C VCC = 400 V, IC = 50 A Rg = 10 W VGE = 0 V/ 15 V Rise time Turn−off delay time Fall time TJ = 150°C VCC = 400 V, IC = 50 A Rg = 10 W VGE = 0 V/ 15 V tf − 96 − Eon − 1.90 − Turn−off switching loss Eoff − 0.83 − Total switching loss Ets − 2.73 − VF − − 2.10 2.20 2.90 − Turn−on switching loss ns mJ ns mJ DIODE CHARACTERISTIC Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current VGE = 0 V, IF = 50 A VGE = 0 V, IF = 50 A, TJ = 175°C TJ = 25°C IF = 50 A, VR = 400 V diF/dt = 200 A/ms TJ = 175°C IF = 50 A, VR = 400 V diF/dt = 200 A/ms V trr − 94 − ns Qrr − 0.45 − mC Irrm − 8 − A trr − 170 − ns Qrr − 1.40 − mC Irrm − 13 − A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NGTB50N60FL2WG TYPICAL CHARACTERISTICS 160 TJ = 25°C VGE = 15 V to 20 V 140 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 160 13 V 120 100 80 11 V 60 10 V 40 7V 20 9V 8V 0 0 1 2 3 4 7 6 80 11 V 60 10 V 40 9V 20 8V 7V 0 8 1 2 3 4 5 6 7 Figure 1. Output Characteristics Figure 2. Output Characteristics IC, COLLECTOR CURRENT (A) TJ = −55°C 120 100 80 11 V 60 10 V 40 7V 20 9V 8V 1 2 3 4 5 8 160 13 V 140 TJ = 25°C 120 TJ = 150°C 100 80 60 40 20 0 6 7 8 0 2 4 6 14 12 10 8 16 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 3.00 10,000 18 Cies IC = 75 A 2.50 IC = 50 A 2.00 IC = 25 A 1.50 1.00 C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (A) 13 V VCE, COLLECTOR−EMITTER VOLTAGE (V) 0 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE = 17 V to 20 V 100 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE = 20 V to 15 V 0 120 15 V 0 5 160 140 TJ = 150°C 140 1000 Coes 100 Cres 0.50 0 −75 −50 −25 0 25 50 10 75 100 125 150 175 200 TJ = 25°C 0 10 20 30 40 50 60 70 80 90 100 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance www.onsemi.com 3 NGTB50N60FL2WG TYPICAL CHARACTERISTICS 16 VGE, GATE−EMITTER VOLTAGE (V) IF, FORWARD CURRENT (A) 70 60 50 40 30 20 TJ = 150°C 10 TJ = 25°C 0 0 0.5 1.0 1.5 2.5 3.0 3.5 10 8 6 4 VCE = 480 V VGE = 15 V IC = 50 A 2 0 4.0 50 100 200 150 VF, FORWARD VOLTAGE (V) QG, GATE CHARGE (nC) Figure 7. Diode Forward Characteristics Figure 8. Typical Gate Charge 1000 VCE = 400 V VGE = 15 V 2.5 IC = 50 A Rg = 10 W 2.0 SWITCHING TIME (ns) SWITCHING LOSS (mJ) 12 0 2.0 3.0 Eon 1.5 Eoff 1.0 td(off) td(on) 100 tf tr VCE = 400 V VGE = 15 V IC = 50 A Rg = 10 W 0.5 0 10 0 20 40 60 80 100 120 140 0 160 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 9. Switching Loss vs. Temperature Figure 10. Switching Time vs. Temperature 160 1000 VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W 5 SWITCHING TIME (ns) 6 SWITCHING LOSS (mJ) 14 Eon 4 3 Eoff 2 td(off) tf 100 td(on) VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W tr 1 0 15 25 35 45 55 65 75 85 95 10 105 15 25 35 45 55 65 75 85 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Switching Loss vs. IC Figure 12. Switching Time vs. IC www.onsemi.com 4 95 105 NGTB50N60FL2WG TYPICAL CHARACTERISTICS 10,000 14 SWITCHING LOSS (mJ) 12 10 SWITCHING TIME (ns) VCE = 400 V VGE = 15 V TJ = 150°C IC = 50 A Eon 8 6 Eoff 4 VCE = 400 V VGE = 15 V TJ = 150°C IC = 50 A 1000 td(off) 100 tf td(on) 2 0 10 5 15 25 35 45 55 65 75 5 85 25 35 45 55 65 Rg, GATE RESISTOR (W) Rg, GATE RESISTOR (W) Figure 14. Switching Time vs. Rg 75 85 SWITCHING TIME (ns) 1000 VGE = 15 V TJ = 150°C IC = 75 A Rg = 10 W 5 SWITCHING LOSS (mJ) 15 Figure 13. Switching Loss vs. Rg 6 Eon 4 3 Eoff 2 td(off) td(on) 100 tf tr VGE = 15 V TJ = 150°C IC = 75 A Rg = 10 W 1 0 150 200 250 300 10 350 400 450 500 550 600 650 150 200 250 300 350 400 450 500 550 600 650 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Loss vs. VCE Figure 16. Switching Time vs. VCE 1000 1000 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) tr 100 50 ms dc operation 10 100 ms Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 1 0.1 1 10 1 ms 100 10 VGE = 15 V, TC = 125°C 100 1 1000 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Safe Operating Area Figure 18. Reverse Bias Safe Operating Area www.onsemi.com 5 NGTB50N60FL2WG Qrr, REVERSE RECOVERY CHARGE (mC) TYPICAL CHARACTERISTICS 140 TJ = 175°C, IF = 50 A 120 100 80 TJ = 25°C, IF = 50 A 60 40 Irm, REVERSE RECOVERY CURRENT (A) 100 300 500 700 900 1100 3.0 2.5 TJ = 175°C, IF = 50 A 2.0 1.5 1.0 TJ = 25°C, IF = 50 A 0.5 0 100 300 500 700 900 diF/dt, DIODE CURRENT SLOPE (A/ms) diF/dt, DIODE CURRENT SLOPE (A/ms) Figure 19. trr vs. diF/dt (VR = 400 V) Figure 20. Qrr vs. diF/dt (VR = 400 V) 40 1100 2.75 TJ = 175°C, IF = 50 A VF, FORWARD VOLTAGE (V) trr, REVERSE RECOVERY TIME (ns) 160 30 20 TJ = 25°C, IF = 50 A 10 0 100 300 500 700 900 1100 2.50 IF = 60 A 2.25 2.00 IF = 50 A 1.75 IF = 25 A 1.50 1.25 1.00 −75 −50 −25 0 25 50 75 100 125 150 175 200 diF/dt, DIODE CURRENT SLOPE (A/ms) TJ, JUNCTION TEMPERATURE (°C) Figure 21. Irm vs. diF/dt (VR = 400 V) Figure 22. VF vs. TJ www.onsemi.com 6 NGTB50N60FL2WG TYPICAL CHARACTERISTICS SQUARE−WAVE PEAK R(t) (°C/W) 1 RqJC = 0.36 50% Duty Cycle 0.1 20% 10% 5% R1 Junction R2 Rn Case 2% 0.01 C1 0.001 Cn C2 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse Ri (°C/W) Ci (J/°C) 0.020315 0.034265 0.021803 0.054410 0.113326 0.040172 0.004922 0.009229 0.045865 0.058120 0.088241 0.787180 0.0001 0.000001 0.00001 0.001 0.0001 0.01 0.1 1 ON−PULSE WIDTH (s) Figure 23. IGBT Transient Thermal Impedance SQUARE−WAVE PEAK R(t) (°C/W) 1 RqJC = 0.60 50% Duty Cycle 20% 0.1 10% 5% Junction R1 R2 Rn C1 C2 Cn 2% 0.01 Single Pulse Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 0.001 0.000001 0.00001 0.0001 0.001 0.01 ON−PULSE WIDTH (s) Figure 24. Diode Transient Thermal Impedance www.onsemi.com 7 Case Ri (°C/W) Ci (J/°C) 0.007969 0.010774 0.010678 0.028006 0.045699 0.104967 0.059973 0.066388 0.134301 0.000125 0.000928 0.002961 0.003571 0.006920 0.009527 0.052729 0.150629 0.235463 0.152890 0.654064 0.1 1 NGTB50N60FL2WG Figure 25. Collector Current vs. Switching Frequency Figure 26. Test Circuit for Switching Characteristics www.onsemi.com 8 NGTB50N60FL2WG Figure 27. Definition of Turn On Waveform www.onsemi.com 9 NGTB50N60FL2WG Figure 28. Definition of Turn Off Waveform www.onsemi.com 10 NGTB50N60FL2WG PACKAGE DIMENSIONS TO−247 CASE 340L−02 ISSUE F −T− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. C −B− E U L N 4 A −Q− 1 2 0.63 (0.025) 3 M T B M P −Y− K W J F 2 PL D 3 PL 0.25 (0.010) M Y Q MILLIMETERS MIN MAX 20.32 21.08 15.75 16.26 4.70 5.30 1.00 1.40 1.90 2.60 1.65 2.13 5.45 BSC 1.50 2.49 0.40 0.80 19.81 20.83 5.40 6.20 4.32 5.49 --4.50 3.55 3.65 6.15 BSC 2.87 3.12 STYLE 4: PIN 1. 2. 3. 4. H G DIM A B C D E F G H J K L N P Q U W INCHES MIN MAX 0.800 8.30 0.620 0.640 0.185 0.209 0.040 0.055 0.075 0.102 0.065 0.084 0.215 BSC 0.059 0.098 0.016 0.031 0.780 0.820 0.212 0.244 0.170 0.216 --0.177 0.140 0.144 0.242 BSC 0.113 0.123 GATE COLLECTOR EMITTER COLLECTOR S ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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