NGTB50N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http://onsemi.com Features • • • • • • Low Saturation Voltage using Trench with Field Stop Technology Low Switching Loss Reduces System Power Dissipation Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 5 ms Short−Circuit Capability These are Pb−Free Devices 50 A, 600 V VCEsat = 1.65 V EOFF = 0.6 mJ C Typical Applications • Solar Inverters • Uninterruptible Power Supplies (UPS) G ABSOLUTE MAXIMUM RATINGS Rating E Symbol Value Unit Collector−emitter voltage VCES 600 V Collector current @ TC = 25°C @ TC = 100°C IC Diode Forward Current @ TC = 25°C @ TC = 100°C IF A 100 50 A 100 50 Diode Pulsed Current TPULSE Limited by TJ Max IFM 200 A Pulsed collector current, Tpulse limited by TJmax ICM 200 A Short−circuit withstand time VGE = 15 V, VCE = 300 V, TJ ≤ +150°C tSC 5 ms Gate−emitter voltage VGE $20 V V Transient gate−emitter voltage (TPULSE = 5 ms, D < 0.10) $30 Power Dissipation @ TC = 25°C @ TC = 100°C PD Operating junction temperature range TJ −55 to +150 °C Storage temperature range Tstg −55 to +150 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C January, 2013 − Rev. 1 C TO−247 CASE 340L STYLE 4 E MARKING DIAGRAM 50N60FL AYWWG W 223 89 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2013 G 1 A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NGTB50N60FLWG Package Shipping TO−247 (Pb−Free) 30 Units / Rail Publication Order Number: NGTB50N60FLW/D NGTB50N60FLWG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.56 °C/W Thermal resistance junction−to−case, for Diode RqJC 0.74 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 600 − − V VGE = 15 V, IC = 50 A VGE = 15 V, IC = 50 A, TJ = 150°C VCEsat 1.40 − 1.65 1.85 1.90 − V Parameter STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage VGE = VCE, IC = 350 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 150°C ICES − − − − 0.5 2 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 200 nA Cies − 7500 − pF Coes − 300 − Cres − 190 − DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 480 V, IC = 50 A, VGE = 15 V Gate to collector charge Qg − 310 − Qge − 60 − Qgc − 150 − td(on) − 116 − nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time TJ = 25°C VCC = 400 V, IC = 50 A Rg = 10 W VGE = 0 V/ 15 V tr − 43 − td(off) − 292 − ns tf − 78 − Eon − 1.1 − Eoff − 0.6 − Total switching loss Ets − 1.7 − Turn−on delay time td(on) − 110 − tr − 45 − td(off) − 300 − tf − 105 − Eon − 1.4 − Turn−off switching loss Eoff − 1.1 − Total switching loss Ets − 2.5 − VF 1.55 − 1.85 1.85 2.1 − V trr − 85 − ns Qrr − 0.40 − mC Irrm − 8 − A Turn−on switching loss Turn−off switching loss Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 150°C VCC = 400 V, IC = 50 A Rg = 10 W VGE = 0 V/ 15 V mJ ns mJ DIODE CHARACTERISTIC Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current VGE = 0 V, IF = 50 A VGE = 0 V, IF = 50 A, TJ = 150°C TJ = 25°C IF = 50 A, VR = 200 V diF/dt = 200 A/ms http://onsemi.com 2 NGTB50N60FLWG TYPICAL CHARACTERISTICS 300 TJ = 25°C VGE = 17 V to 13 V 200 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 250 11 V 150 10 V 100 9V 50 7V 0 0 8V 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) 250 11 V 150 10 V 100 9V 50 8V 7V 0 Figure 1. Output Characteristics VGE = 17 V to 13 V 11 V 150 10 V 100 7V 50 0 9V 8V 0 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) 180 160 100 80 60 40 20 0 16 100000 IC = 100 A 2.00 IC = 50 A 1.50 IC = 25 A 1.00 IC = 5 A CAPACITANCE (pF) VCE, COLLECTOR−EMITTER VOLTAGE (V) 4 8 12 VGE, GATE−EMITTER VOLTAGE (V) Figure 4. Typical Transfer Characteristics 3.00 10000 Cies 1000 Coes 100 Cres 0.50 0.00 −75 TJ = 150°C 120 0 8 TJ = 25°C 140 Figure 3. Output Characteristics 2.50 8 200 TJ = −55°C 200 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 2. Output Characteristics IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 250 VGE = 17 V to 13 V 200 0 8 TJ = 150°C −25 25 75 125 TJ, JUNCTION TEMPERATURE (°C) 175 10 0 Figure 5. VCE(sat) vs. TJ 30 40 50 60 70 80 90 100 10 20 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 6. Typical Capacitance http://onsemi.com 3 NGTB50N60FLWG TYPICAL CHARACTERISTICS 20 VGE, GATE−EMITTER VOLTAGE (V) 120 IF, FORWARD CURRENT (A) 100 TJ = 25°C 80 TJ = 150°C 60 40 20 0 0 0.5 1 1.5 2 2.5 VF, FORWARD VOLTAGE (V) 3 15 10 5 0 3.5 VCE = 480 V 50 0 Figure 7. Diode Forward Characteristics td(off) Eon 1.2 SWITCHING TIME (ns) SWITCHING LOSS (mJ) 350 1000 1.4 1 Eoff 0.8 0.6 VCE = 400 V VGE = 15 V IC = 50 A Rg = 10 W 0.4 0.2 0 0 20 40 60 100 120 140 80 TJ, JUNCTION TEMPERATURE (°C) tf tr 10 1 160 td(on) 100 VCE = 400 V VGE = 15 V IC = 50 A Rg = 10 W 0 Figure 9. Switching Loss vs. Temperature VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W 4 3.5 3 2.5 Eon 1 tf 100 td(on) tr 10 VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W 0.5 20 160 td(off) 1.5 8 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) 1000 Eoff 2 20 Figure 10. Switching Time vs. Temperature SWITCHING TIME (ns) 4.5 SWITCHING LOSS (mJ) 300 Figure 8. Typical Gate Charge 1.6 0 100 150 200 250 QG, GATE CHARGE (nC) 32 44 56 68 80 IC, COLLECTOR CURRENT (A) 92 1 104 8 Figure 11. Switching Loss vs. IC 20 32 44 56 68 80 IC, COLLECTOR CURRENT (A) Figure 12. Switching Time vs. IC http://onsemi.com 4 92 104 NGTB50N60FLWG TYPICAL CHARACTERISTICS SWITCHING LOSS (mJ) 6 5 10000 VCE = 400 V VGE = 15 V IC = 50 A TJ = 150°C td(off) Eon SWITCHING TIME (ns) 7 4 Eoff 3 2 1000 td(on) 100 tf tr VCE = 400 V VGE = 15 V IC = 50 A TJ = 150°C 10 1 0 5 15 25 35 45 55 65 75 1 5 85 SWITCHING TIME (ns) SWITCHING LOSS (mJ) Eon 225 275 325 375 425 475 525 VCE, COLLECTOR−EMITTER VOLTAGE (V) 85 225 275 325 375 425 475 525 VCE, COLLECTOR−EMITTER VOLTAGE (V) 575 tf tr 10 1 175 575 VGE = 15 V IC = 50 A Rg = 10 W TJ = 150°C Figure 16. Switching Time vs. VCE 1000 1000 50 ms 100 dc operation IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 75 td(on) 100 Figure 15. Switching Loss vs. VCE 0.01 1 65 td(off) 0.6 0.1 55 1000 VGE = 15 V IC = 50 A Rg = 10 W TJ = 150°C 1.2 1 45 Figure 14. Switching Time vs. RG Eoff 10 35 Figure 13. Switching Loss vs. RG 1.8 0 175 25 RG, GATE RESISTOR (W) 3 2.4 15 RG, GATE RESISTOR (W) 100 ms 1 ms Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 10 100 VCE, COLLECTOR−EMITTER VOLTAGE (V) 100 10 1 1000 VGE = 15 V, TC = 125°C 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Safe Operating Area Figure 18. Reverse Bias Safe Operating Area http://onsemi.com 5 NGTB50N60FLWG TYPICAL CHARACTERISTICS 250 Ipk (A) 200 80°C 150 100 50 0 110°C 80°C 110°C VCE = 400 V, TJ ≤ 150°C Rgate = 10 W, VGE = 0/15 V, Tcase = 80 or 110°C (as noted), D = 0.5 0.01 0.1 1 10 FREQUENCY (kHz) 100 1000 Figure 19. Collector Current vs. Switching Frequency 1 50% Duty Cycle RqJC = 0.56 20% R(t) (°C/W) 0.1 10% Junction R1 5% 1% C1 C2 Cn Ri (°C/W) Case 0.00001 ti (sec) 0.02087 0.05041 0.07919 0.11425 0.19393 1.0E−4 5.48E−5 0.002 0.03 0.1 0.09951 2.0 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.001 0.000001 Rn Ci = ti/Ri 2% 0.01 R2 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 20. IGBT Transient Thermal Impedance 1 50% Duty Cycle RqJC = 0.74 R(t) (°C/W) 20% 0.1 10% R2 1% C1 Case 0.00001 Ri (°C/W) 0.07958 0.13798 0.18744 0.23523 0.09951 Cn C2 ti (sec) 4.89E−4 0.002 0.03 0.1 2.0 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.001 0.000001 Rn Ci = ti/Ri 2% 0.01 R1 Junction 5% 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 21. Diode Transient Thermal Impedance http://onsemi.com 6 10 100 1000 NGTB50N60FLWG Figure 22. Test Circuit for Switching Characteristics http://onsemi.com 7 NGTB50N60FLWG Figure 23. Definition of Turn On Waveform http://onsemi.com 8 NGTB50N60FLWG Figure 24. Definition of Turn Off Waveform http://onsemi.com 9 NGTB50N60FLWG PACKAGE DIMENSIONS TO−247 CASE 340L−02 ISSUE F −T− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. C −B− E U N L 4 A −Q− 1 2 0.63 (0.025) 3 M T B M P −Y− K F 2 PL W J D 3 PL 0.25 (0.010) M Y Q MILLIMETERS MIN MAX 20.32 21.08 15.75 16.26 4.70 5.30 1.00 1.40 1.90 2.60 1.65 2.13 5.45 BSC 1.50 2.49 0.40 0.80 19.81 20.83 5.40 6.20 4.32 5.49 --4.50 3.55 3.65 6.15 BSC 2.87 3.12 STYLE 4: PIN 1. 2. 3. 4. H G DIM A B C D E F G H J K L N P Q U W INCHES MIN MAX 0.800 8.30 0.620 0.640 0.185 0.209 0.040 0.055 0.075 0.102 0.065 0.084 0.215 BSC 0.059 0.098 0.016 0.031 0.780 0.820 0.212 0.244 0.170 0.216 --0.177 0.140 0.144 0.242 BSC 0.113 0.123 GATE COLLECTOR EMITTER COLLECTOR S ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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