NGTB30N60IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. http://onsemi.com 30 A, 600 V VCEsat = 1.8 V Eoff = 0.28 mJ Features • • • • • Low Saturation Voltage using Trench with Fieldstop Technology Low Switching Loss Reduces System Power Dissipation Low Gate Charge Soft, Fast Free Wheeling Diode These are Pb−Free Devices C Typical Applications G • Inductive Heating • Soft Switching E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage VCES 600 V Collector current @ TC = 25°C @ TC = 100°C IC Pulsed collector current, Tpulse limited by TJmax ICM Diode forward current @ TC = 25°C @ TC = 100°C IF Diode pulsed current, Tpulse limited by TJmax IFM 150 Gate−emitter voltage VGE $20 Power Dissipation @ TC = 25°C @ TC = 100°C PD Operating junction temperature range TJ −55 to +150 °C Storage temperature range Tstg −55 to +150 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C A 60 30 G 150 A C TO−247 CASE 340L STYLE 4 E A 60 30 MARKING DIAGRAM A V W 250 50 30N60IHL AYWWG Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NGTB30N60IHLWG © Semiconductor Components Industries, LLC, 2012 November, 2012 − Rev. 0 1 Package Shipping TO−247 30 Units / Rail (Pb−Free) Publication Order Number: NGTB30N60IHLW/D NGTB30N60IHLWG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.87 °C/W Thermal resistance junction−to−case, for Diode RqJC 1.46 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 600 − − V VGE = 15 V, IC = 30 A VGE = 15 V, IC = 30 A, TJ = 150°C VCEsat − − 1.8 2.2 2.3 − V VGE = VCE, IC = 250 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 150°C ICES − − − − 0.2 2 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 100 nA Cies − 3100 − pF Coes − 120 − Cres − 80 − Parameter STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 480 V, IC = 30 A, VGE = 15 V Gate to collector charge nC Qg 130 Qge 27 Qgc 65 td(on) 70 tr 30 td(off) 140 tf 80 Eoff 0.28 mJ td(on) 70 ns tr 32 td(off) 150 SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time TJ = 25°C VCC = 400 V, IC = 30 A Rg = 10 W VGE = 0 V/ 15V Turn−off switching loss Turn−on delay time Rise time Turn−off delay time Fall time TJ = 150°C VCC = 400 V, IC = 30 A Rg = 10 W VGE = 0 V/ 15V ns tf 100 Eoff 0.55 VGE = 0 V, IF = 30 A VGE = 0 V, IF = 30 A, TJ = 150°C VF 1.2 1.2 TJ = 25°C IF = 30 A, VR = 200 V diF/dt = 200 A/ms trr 400 ns Qrr 4500 nc Irrm 23 A Turn−off switching loss mJ DIODE CHARACTERISTIC Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current http://onsemi.com 2 1.4 V NGTB30N60IHLWG TYPICAL CHARACTERISTICS TJ = 25°C 120 140 VGE = 17 V to 15 V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 140 13 V 100 80 60 11 V 40 10 V 20 9V 0 7 V to 8 V 0 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) TJ = 150°C 120 VGE = 17 V to 13 V 100 80 60 11 V 40 10 V 0 0 8 9V 8V 7V 20 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Output Characteristics TJ = −55°C 140 Figure 2. Output Characteristics 140 VGE = 17 V to 13 V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 160 120 100 80 11 V 60 40 10 V 20 0 0 9V 7 V to 8 V 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) 120 100 TJ = 25°C 80 TJ = 150°C 60 40 20 0 0 8 Figure 3. Output Characteristics 16 10000 4.00 IC = 60 A Cies 3.50 3.00 IC = 30 A 2.50 IC = 15 A 2.00 IC = 5 A 1.50 1.00 CAPACITANCE (pF) VCE, COLLECTOR−EMITTER VOLTAGE (V) 4 8 12 VGE, GATE−EMITTER VOLTAGE (V) Figure 4. Typical Transfer Characteristics 4.50 1000 100 Coes Cres 0.50 0 −75 8 −25 25 75 125 175 10 0 10 20 30 40 50 60 70 80 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance http://onsemi.com 3 90 100 NGTB30N60IHLWG TYPICAL CHARACTERISTICS 20 100 VGE, GATE−EMITTER VOLTAGE (V) IF, FORWARD CURRENT (A) 120 TJ = 25°C 80 60 TJ = 150°C 40 20 0 0 0.5 1 1.5 2 VF, FORWARD VOLTAGE (V) 10 5 0 2.5 VCE = 480 V 15 0 20 40 60 80 100 QG, GATE CHARGE (nC) 0.7 1000 0.5 SWITCHING TIME (ns) VCE = 400 V VGE = 15 V IC = 30 A Rg = 10 W 0.6 0.4 0.3 0.2 td(off) 100 tf 10 VCE = 400 V VGE = 15 V IC = 30 A Rg = 10 W 0.1 0 0 20 40 140 Figure 8. Typical Gate Charge 60 80 100 120 140 1 160 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 9. Switching Loss vs. Temperature Figure 10. Switching Time vs. Temperature 160 1000 1.6 VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W 1.4 1.2 SWITCHING TIME (ns) Eoff, TURN−OFF SWITCHING LOSS (mJ) Eoff, TURN−OFF SWITCHING LOSS (mJ) Figure 7. Diode Forward Characteristics 120 1 0.8 0.6 0.4 tf 100 td(off) 10 VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W 0.2 0 1 8 16 24 32 52 40 56 64 IC, COLLECTOR CURRENT (A) 8 24 32 52 40 IC, COLLECTOR CURRENT (A) Figure 11. Switching Loss vs. IC Figure 12. Switching Time vs. IC http://onsemi.com 4 16 56 64 NGTB30N60IHLWG TYPICAL CHARACTERISTICS 1000 td(off) 0.8 SWITCHING TIME (ns) Eoff, TURN−OFF SWITCHING LOSS (mJ) 1 0.9 0.7 0.6 0.5 0.4 0.3 VCE = 400 V VGE = 15 V IC = 30 A TJ = 150°C 0.2 0.1 0 5 15 25 35 45 55 65 75 10 VCE = 400 V VGE = 15 V IC = 30 A TJ = 150°C 15 25 35 45 55 65 RG, GATE RESISTOR (W) RG, GATE RESISTOR (W) Figure 13. Switching Loss vs. RG Figure 14. Switching Time vs. RG 75 85 1000 0.8 0.7 SWITCHING TIME (ns) Eoff, TURN−OFF SWITCHING LOSS (mJ) tf 1 5 85 0.9 0.6 0.5 0.4 0.3 VGE = 15 V IC = 30 A RG = 10 W TJ = 150°C 0.2 0.1 0 175 225 275 325 375 425 475 tf 10 VGE = 15 V IC = 30 A RG = 10 W TJ = 150°C 225 275 325 375 425 475 525 575 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Loss vs. VCE Figure 16. Switching Time vs. VCE 1000 IC, COLLECTOR CURRENT (A) 50 ms 100 100 ms 10 dc operation 1 ms 1 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 0.1 0.01 td(off) 100 1 175 525 575 1000 IC, COLLECTOR CURRENT (A) 100 1 10 100 1000 100 10 1 VGE = 15 V, TC = 125°C 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Safe Operating Area Figure 18. Reverse Bias Safe Operating Area http://onsemi.com 5 NGTB30N60IHLWG TYPICAL CHARACTERISTICS 1 50% Duty Cycle RqJC = 0.87 20% R(t) (°C/W) 0.1 10% 5% Junction R1 2% 0.01 R2 Rn C2 Cn Ci = ti/Ri 1% C1 Single Pulse 0.001 0.000001 Ri (°C/W) Case 0.00001 ti (sec) 0.04077 0.09054 0.16141 0.21558 0.24842 1.0E−4 5.48E−5 0.002 0.03 0.1 0.11759 2.0 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 19. IGBT Transient Thermal Impedance 10 RqJC = 1.46 R(t) (°C/W) 1 0.1 50% Duty Cycle 20% 10% 5% Junction R1 2% 0.01 R2 Rn C2 Cn Ci = ti/Ri C1 1% 0.00001 Ri (°C/W) 0.18019 0.37276 0.45472 0.33236 0.11759 ti (sec) 1.48E−4 0.002 0.03 0.1 2.0 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.001 0.000001 Case 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 20. Diode Transient Thermal Impedance http://onsemi.com 6 10 100 1000 NGTB30N60IHLWG Figure 21. Test Circuit for Switching Characteristics http://onsemi.com 7 NGTB30N60IHLWG Figure 22. Definition of Turn On Waveform http://onsemi.com 8 NGTB30N60IHLWG Figure 23. Definition of Turn Off Waveform http://onsemi.com 9 NGTB30N60IHLWG PACKAGE DIMENSIONS TO−247 CASE 340L−02 ISSUE F −T− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. C −B− E U N L 4 A −Q− 1 2 0.63 (0.025) 3 M T B M P −Y− K F 2 PL W J D 3 PL 0.25 (0.010) M Y Q MILLIMETERS MIN MAX 20.32 21.08 15.75 16.26 4.70 5.30 1.00 1.40 1.90 2.60 1.65 2.13 5.45 BSC 1.50 2.49 0.40 0.80 19.81 20.83 5.40 6.20 4.32 5.49 --4.50 3.55 3.65 6.15 BSC 2.87 3.12 STYLE 4: PIN 1. 2. 3. 4. H G DIM A B C D E F G H J K L N P Q U W INCHES MIN MAX 0.800 8.30 0.620 0.640 0.185 0.209 0.040 0.055 0.075 0.102 0.065 0.084 0.215 BSC 0.059 0.098 0.016 0.031 0.780 0.820 0.212 0.244 0.170 0.216 --0.177 0.140 0.144 0.242 BSC 0.113 0.123 GATE COLLECTOR EMITTER COLLECTOR S ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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