NGTB35N60FL2W D

NGTB35N60FL2WG
IGBT - Field Stop II
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. The IGBT is well suited
for UPS and solar applications. Incorporated into the device is a soft
and fast co−packaged free wheeling diode with a low forward voltage.
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Features
•
•
•
•
•
•
35 A, 600 V
VCEsat = 1.70 V
EOFF = 0.28 mJ
Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for High Speed Switching
5 ms Short−Circuit Capability
These are Pb−Free Devices
C
Typical Applications
• Solar Inverters
• Uninterruptible Power Supplies (UPS)
• Welding
G
E
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Unit
Collector−emitter voltage
Rating
VCES
600
V
Collector current
@ TC = 25°C
@ TC = 100°C
IC
Diode Forward Current
@ TC = 25°C
@ TC = 100°C
IF
A
70
35
C
A
IFM
120
A
Pulsed collector current, Tpulse
limited by TJmax
ICM
120
A
Short−circuit withstand time
VGE = 15 V, VCE = 400 V,
TJ ≤ +150°C
tSC
5
ms
Gate−emitter voltage
VGE
MARKING DIAGRAM
35N60FL2
AYWWG
$20
V
V
$30
Transient gate−emitter voltage
(TPULSE = 5 ms, D < 0.10)
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
Operating junction temperature
range
TJ
−55 to +175
°C
Storage temperature range
Tstg
−55 to +175
°C
Lead temperature for soldering, 1/8”
from case for 5 seconds
TSLD
260
°C
W
300
150
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
July, 2015 − Rev. 3
TO−247
CASE 340L
STYLE 4
E
70
35
Diode Pulsed Current
TPULSE Limited by TJ Max
© Semiconductor Components Industries, LLC, 2015
G
1
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
NGTB35N60FL2WG
TO−247
(Pb−Free)
30 Units / Rail
Publication Order Number:
NGTB35N60FL2W/D
NGTB35N60FL2WG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction−to−case, for IGBT
Rating
RqJC
0.50
°C/W
Thermal resistance junction−to−case, for Diode
RqJC
1.00
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
600
−
−
V
VGE = 15 V, IC = 35 A
VGE = 15 V, IC = 35 A, TJ = 175°C
VCEsat
1.50
−
1.70
2.20
2.00
−
V
VGE = VCE, IC = 350 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 175°C
ICES
−
−
−
−
0.2
4.0
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V , VCE = 0 V
IGES
−
−
100
nA
Cies
−
3115
−
pF
VCE = 20 V, VGE = 0 V, f = 1 MHz
Coes
−
149
−
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
Reverse transfer capacitance
Cres
−
88
−
Gate charge total
Qg
−
125
−
Gate to emitter charge
Qge
−
30
−
Qgc
−
63
−
td(on)
−
72
−
tr
−
40
−
td(off)
−
132
−
tf
−
75
−
Eon
−
0.84
−
Turn−off switching loss
Eoff
−
0.28
−
Total switching loss
Ets
−
1.12
−
Turn−on delay time
td(on)
−
70
−
tr
−
38
−
td(off)
−
135
−
VCE = 480 V, IC = 35 A, VGE = 15 V
Gate to collector charge
nC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 25°C
VCC = 400 V, IC = 35 A
Rg = 10 W
VGE = 0 V/ 15 V
Rise time
Turn−off delay time
Fall time
TJ = 150°C
VCC = 400 V, IC = 35 A
Rg = 10 W
VGE = 0 V/ 15 V
tf
−
96
−
Eon
−
1.05
−
Turn−off switching loss
Eoff
−
0.50
−
Total switching loss
Ets
−
1.55
−
VF
1.50
−
2.20
2.25
2.90
−
Turn−on switching loss
ns
mJ
ns
mJ
DIODE CHARACTERISTIC
Forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGE = 0 V, IF = 35 A
VGE = 0 V, IF = 35 A, TJ = 175°C
TJ = 25°C
IF = 35 A, VR = 200 V
diF/dt = 200 A/ms
TJ = 175°C
IF = 35 A, VR = 400 V
diF/dt = 200 A/ms
V
trr
−
68
−
ns
Qrr
−
265
−
nC
Irrm
−
7
−
A
trr
−
156
−
ns
Qrr
−
836
−
nC
Irrm
−
8.43
−
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NGTB35N60FL2WG
TYPICAL CHARACTERISTICS
140
140
VGE = 20 to 15 V
13 V
100
80
60
11 V
40
10 V
7V
20
0
1
2
3
4
9V
8V
6
5
15 V
VGE = 20 to 17 V
100
13 V
80
60
11 V
40
10 V
9V
8V
7V
20
0
0
8
1
2
3
4
5
6
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
8
140
TJ = −55°C
VGE = 20 to
15 V
120
13 V
100
80
60
11 V
40
10 V
20
0
TJ = 150°C
120
VCE, COLLECTOR−EMITTER VOLTAGE (V)
140
IC, COLLECTOR CURRENT (A)
7
IC, COLLECTOR CURRENT (A)
0
VCE, COLLECTOR−EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
120
7V
9V
8V
0
1
2
3
4
5
6
120
TJ = 25°C
100
80
TJ = 150°C
60
40
20
0
7
0
8
2
4
6
8
10
12
14
16
18
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
3.75
3.50
3.25
3.00
2.75
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
−75 −50 −25
10,000
IC = 70 A
Cies
C, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (A)
TJ = 25°C
IC = 35 A
IC = 15 A
IC = 5 A
1000
Coes
100
Cres
TJ = 25°C
10
0
25
50
75
0
100 125 150 175 200
10
20
30
40
50
60
70
80
90 100
TJ, JUNCTION TEMPERATURE (°C)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs. TJ
Figure 6. Typical Capacitance
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3
NGTB35N60FL2WG
TYPICAL CHARACTERISTICS
20
VGE, GATE−EMITTER VOLTAGE (V)
110
IF, FORWARD CURRENT (A)
100
90
80
70
TJ = 25°C
60
TJ = 150°C
50
40
30
20
10
0
0
0.5
1.0
1.5
2.0
2.5
3.5
3.0
16
14
12
10
8
6
4
VCE = 480 V
VGE = 15 V
IC = 35 A
2
0
4.0
0
60
40
20
80
QG, GATE CHARGE (nC)
Figure 7. Diode Forward Characteristics
Figure 8. Typical Gate Charge
1000
1.25
SWITCHING TIME (ns)
VCE = 400 V
VGE = 15 V
IC = 35 A
Rg = 10 W
1.5
120
100
VF, FORWARD VOLTAGE (V)
1.75
SWITCHING LOSS (mJ)
18
Eon
1
0.75
Eoff
0.5
140
VCE = 400 V
VGE = 15 V
IC = 35 A
Rg = 10 W
td(off)
tf
100
td(on)
tr
0.25
0
0
20
40
60
80
100
120
140
10
160
0
20
Figure 9. Switching Loss vs. Temperature
Eon
2
1.5
Eoff
1
100
120
140
160
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
td(off)
tf
100
td(on)
tr
0.5
0
15
80
1000
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
2.5
60
Figure 10. Switching Time vs. Temperature
3.5
3
40
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
20
25
30 35
40
45 50
55 60
10
15
65 70 75
20
25
30 35
40
45 50
55 60
65 70 75
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. IC
Figure 12. Switching Time vs. IC
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4
NGTB35N60FL2WG
TYPICAL CHARACTERISTICS
10000
VCE = 400 V
VGE = 15 V
TJ = 150°C
IC = 35 A
SWITCHING LOSS (mJ)
3.5
3
SWITCHING TIME (ns)
4
Eon
2.5
2
1.5
Eoff
1
1000
td(off)
tf
td(on)
100
VCE = 400 V
VGE = 15 V
TJ = 150°C
IC = 35 A
tr
0.5
0
10
5
15
25
35
45
55
75
65
5
45
55
65
75
Figure 14. Switching Time vs. Rg
85
1000
IC = 35 A
VGE = 15 V
TJ = 150°C
Rg = 10 W
Eon
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
1.4
35
Figure 13. Switching Loss vs. Rg
IC = 35 A
VGE = 15 V
TJ = 150°C
Rg = 10 W
1.6
25
Rg, GATE RESISTOR (W)
2
1.8
15
Rg, GATE RESISTOR (W)
1.2
1
Eoff
0.8
0.6
0.4
td(off)
100
tf
td(on)
tr
0.2
10
175
0
150
200 250
300
350
400 450
500
550
600
275
325
375
425
475
525
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE
Figure 16. Switching Time vs. VCE
575
1000
1000
1 ms
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
225
100 ms
100
50 ms
dc operation
10
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
1
0.1
1
10
100
1000
VGE = 15 V, TC = 125°C
100
10
1
1
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area
Figure 18. Reverse Bias Safe Operating Area
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5
NGTB35N60FL2WG
Qrr, REVERSE RECOVERY CHARGE (mC)
TYPICAL CHARACTERISTICS
140
TJ = 175°C, IF = 35 A
120
100
80
TJ = 25°C, IF = 35 A
60
40
Irm, REVERSE RECOVERY CURRENT (A)
100
300
500
700
900
1100
2.0
1.5
TJ = 175°C, IF = 35 A
1.0
TJ = 25°C, IF = 35 A
0.5
0
100
300
500
700
900
diF/dt, DIODE CURRENT SLOPE (A/ms)
diF/dt, DIODE CURRENT SLOPE (A/ms)
Figure 19. trr vs. diF/dt
(VR = 400 V)
Figure 20. Qrr vs. diF/dt
(VR = 400 V)
30
1100
3.5
VF, FORWARD VOLTAGE (V)
trr, REVERSE RECOVERY TIME (ns)
160
TJ = 175°C, IF = 35 A
20
TJ = 25°C, IF = 35 A
10
0
100
300
500
700
900
1100
IF = 60 A
3.0
IF = 50 A
2.5
IF = 35 A
2.0
1.5
1.0
−75 −50 −25
0
25
50
75 100 125 150 175 200
diF/dt, DIODE CURRENT SLOPE (A/ms)
TJ, JUNCTION TEMPERATURE (°C)
Figure 21. Irm vs. diF/dt
(VR = 400 V)
Figure 22. VF vs. TJ
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NGTB35N60FL2WG
TYPICAL CHARACTERISTICS
1
50% Duty Cycle
R(t) (°C/W)
0.1
RqJC = 0.50
20%
10%
5%
0.01
Junction R1
2%
R2
Rn
C2
Cn
Case
Ci = ti/Ri
0.001
C1
Single Pulse
Ri (°C/W)
0.0642
0.0608
0.0507
0.1706
0.1422
0.0094
ti (sec)
0.0016
0.0052
0.0197
0.0185
0.0703
3.3481
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.0001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 23. IGBT Transient Thermal Impedance
1
RqJC = 1.0
50% Duty Cycle
R(t) (°C/W)
20%
Junction R1
10%
0.1
5%
R2
Rn
C2
Cn
Ci = ti/Ri
2%
C1
Single Pulse
0.01
0.000001
0.00001
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.0001
0.001
0.01
PULSE TIME (sec)
Figure 24. Diode Transient Thermal Impedance
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7
Case
Ri (°C/W)
ti (sec)
0.015509
0.020310
0.022591
0.050667
0.93366
0.195285
0.133203
0.173839
0.251384
0.039982
0.000064
0.000492
0.001400
0.001974
0.003387
0.005121
0.023740
0.047425
0.125795
2.501137
0.1
1
NGTB35N60FL2WG
PACKAGE DIMENSIONS
TO−247
CASE 340L−02
ISSUE F
−T−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
C
−B−
E
U
L
N
4
A
−Q−
1
2
0.63 (0.025)
3
M
T B
M
P
−Y−
K
W
J
F 2 PL
D 3 PL
0.25 (0.010)
M
Y Q
MILLIMETERS
MIN
MAX
20.32
21.08
15.75
16.26
4.70
5.30
1.00
1.40
1.90
2.60
1.65
2.13
5.45 BSC
1.50
2.49
0.40
0.80
19.81
20.83
5.40
6.20
4.32
5.49
--4.50
3.55
3.65
6.15 BSC
2.87
3.12
STYLE 4:
PIN 1.
2.
3.
4.
H
G
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
U
W
INCHES
MIN
MAX
0.800
8.30
0.620
0.640
0.185
0.209
0.040
0.055
0.075
0.102
0.065
0.084
0.215 BSC
0.059
0.098
0.016
0.031
0.780
0.820
0.212
0.244
0.170
0.216
--0.177
0.140
0.144
0.242 BSC
0.113
0.123
GATE
COLLECTOR
EMITTER
COLLECTOR
S
ON Semiconductor and the
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NGTB35N60FL2W/D