NGTB40N65IHL2W D

NGTB40N65IHL2WG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on state voltage and minimal switching loss. The IGBT is
well suited for half bridge resonant applications. Incorporated into the
device is a soft and fast co−packaged free wheeling diode with a low
forward voltage.
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40 A, 650 V
VCEsat = 1.8 V
Eoff = 0.36 mJ
Features
•
•
•
•
•
•
Extremely Efficient Trench with Fieldstop Technology
Low Switching Loss Reduces System Power Dissipation
Optimized for Low Losses in IH Cooker Application
TJmax = 175°C
Soft, Fast Free Wheeling Diode
This is a Pb−Free Device
C
G
Typical Applications
• Inductive Heating
• Soft Switching
E
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
VCES
650
V
Collector current
@ TC = 25°C
@ TC = 100°C
IC
Pulsed collector current, Tpulse
limited by TJmax
ICM
Diode forward current
@ TC = 25°C
@ TC = 100°C
IF
Diode pulsed current, Tpulse limited
by TJmax
IFM
160
A
Gate−emitter voltage
Transient Gate Emitter Voltage
(tp = 5 ms, D < 0.010)
VGE
$20
$30
V
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
Operating junction temperature
range
TJ
−55 to +175
°C
Storage temperature range
Tstg
−55 to +175
°C
Lead temperature for soldering, 1/8”
from case for 5 seconds
TSLD
260
°C
A
80
40
G
160
A
C
TO−247
CASE 340AL
E
A
80
40
MARKING DIAGRAM
40N65IHL2
AYWWG
W
300
150
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
NGTB40N65IHL2WG
© Semiconductor Components Industries, LLC, 2015
May, 2015 − Rev. 1
1
Package
Shipping
TO−247 30 Units / Rail
(Pb−Free)
Publication Order Number:
NGTB40N65IHL2W/D
NGTB40N65IHL2WG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction−to−case, for IGBT
Rating
RqJC
0.50
°C/W
Thermal resistance junction−to−case, for Diode
RqJC
1.46
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
650
−
−
V
VGE = 15 V, IC = 40 A
VGE = 15 V, IC = 40 A, TJ = 175°C
VCEsat
−
−
1.8
2.3
2.2
−
V
VGE = VCE, IC = 150 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 650 V
VGE = 0 V, VCE = 650 V, TJ = 175°C
ICES
−
−
−
−
0.2
2
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V , VCE = 0 V
IGES
−
−
100
nA
Cies
−
3200
−
pF
Coes
−
130
−
Cres
−
85
−
Qg
−
135
−
Qge
−
27
−
Qgc
−
67
−
TJ = 25°C
VCC = 400 V, IC = 40 A
Rg = 10 W
VGE = 0 V/ 15 V
td(off)
−
140
−
tf
−
65
−
Eoff
−
0.36
−
mJ
TJ = 150°C
VCC = 400 V, IC = 40 A
Rg = 10 W
VGE = 0 V/ 15 V
td(off)
−
150
−
ns
tf
−
85
−
Eoff
−
0.60
−
mJ
VGE = 0 V, IF = 40 A
VGE = 0 V, IF = 40 A, TJ = 175°C
VF
−
−
1.2
1.16
1.4
−
V
trr
−
465
−
ns
Qrr
−
8700
−
nc
Irrm
−
36
−
A
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
VCE = 480 V, IC = 40 A, VGE = 15 V
Gate to collector charge
nC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−off delay time
Fall time
Turn−off switching loss
Turn−off delay time
Fall time
Turn−off switching loss
ns
DIODE CHARACTERISTIC
Forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
TJ = 25°C
IF = 40 A, VR = 200 V
diF/dt = 200 A/ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NGTB40N65IHL2WG
TYPICAL CHARACTERISTICS
160
TJ = 25°C
140
13 V
VGE = 15 V
to 20 V
120
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
160
11 V
100
80
10 V
60
40
9V
20
8V
7V
6
0
0
1
2
3
4
5
7
100
80
11 V
60
10 V
40
9V
8V
20
7V
0
1
2
3
4
5
6
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
8
160
140
120
IC, COLLECTOR CURRENT (A)
TJ = −55°C
VGE = 13 V
to 20 V
11 V
100
80
10 V
60
40
9V
20
8V
0
1
2
3
4
5
6
7
140
TJ = 25°C
120
100
80
TJ = 150°C
60
40
20
0
8
0
2
4
6
10
8
12
14
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
3.0
10,000
IC = 40 A
2.5
IC = 50 A
2.0
1.5
IC = 20 A
IC = 30 A
1.0
0.5
−75 −50 −25
0
25
50
TJ = 25°C
Cies
CAPACITANCE (pF)
IC, COLLECTOR CURRENT (A)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
13 V
VCE, COLLECTOR−EMITTER VOLTAGE (V)
160
0
VGE = 15 V
to 20 V
120
0
8
TJ = 150°C
140
75 100 125 150 175 200
1000
100
Coes
Cres
10
0
20
40
60
80
TJ, JUNCTION TEMPERATURE (°C)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs. TJ
Figure 6. Typical Capacitance
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3
100
NGTB40N65IHL2WG
TYPICAL CHARACTERISTICS
20
VGE, GATE−EMITTER VOLTAGE (V)
IF, FORWARD CURRENT (A)
120
100
TJ = 25°C
80
TJ = 150°C
60
40
20
0
0
0.5
1.0
2.0
1.5
12
10
8
6
VCE = 480 V
VGE = 15 V
IC = 40 A
4
2
0
0
20
40
60
80
100
120
Figure 7. Diode Forward Characteristics
Figure 8. Typical Gate Charge
140
160
1000
SWITCHING TIME (ns)
0.8
0.6
Eoff
0.4
0.2
0
1.6
1.4
1.2
20
40
60
80
VCE = 400 V
VGE = 15 V
IC = 40 A
Rg = 10 W
20
40
60
80
100
120
140
Figure 9. Switching Loss vs. Temperature
Figure 10. Switching Time vs. Temperature
Eoff
14
24
160
1000
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
0.6
0
4
tf
TJ, JUNCTION TEMPERATURE (°C)
0.8
0.2
100
TJ, JUNCTION TEMPERATURE (°C)
1.0
0.4
td(off)
10
0
100 120 140 160 180 200
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
14
QG, GATE CHARGE (nC)
VCE = 400 V
VGE = 15 V
IC = 40 A
Rg = 10 W
1
SWITCHING LOSS (mJ)
16
VF, FORWARD VOLTAGE (V)
1.2
0
18
34
44
54
64
74
td(off)
100
10
4
84
tf
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
14
24
34
44
54
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. IC
Figure 12. Switching Time vs. IC
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4
64
74
NGTB40N65IHL2WG
TYPICAL CHARACTERISTICS
1000
VCE = 400 V
VGE = 15 V
IC = 40 A
TJ = 150°C
1
Eoff
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
1.5
0.5
0
5
15
25
35
45
55
65
75
5
15
25
35
45
55
Figure 14. Switching Time vs. Rg
Eoff
0.4
0.3
0.2
td(off)
100
tf
VGE = 15 V
IC = 40 A
Rg = 10 W
TJ = 150°C
0.1
275
325
375
425
475
525
10
175
575
275
325
375
425
475
525
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE
Figure 16. Switching Time vs. VCE
575
1000
100 ms
100
1 ms
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
225
VCE, COLLECTOR−EMITTER VOLTAGE (V)
1000
50 ms
dc operation
10
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
1
0.1
85
1000
0.5
225
75
Figure 13. Switching Loss vs. Rg
0.6
0
175
65
Rg, GATE RESISTOR (W)
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
0.7
VCE = 400 V
VGE = 15 V
IC = 40 A
TJ = 150°C
Rg, GATE RESISTOR (W)
VGE = 15 V
IC = 40 A
Rg = 10 W
TJ = 150°C
0.8
tf
100
10
85
1
0.9
td(off)
1
10
100
1000
100
10
1
VGE = 15 V, TC = 125°C
1
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area
Figure 18. Reverse Bias Safe Operating Area
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5
NGTB40N65IHL2WG
TYPICAL CHARACTERISTICS
1
50% Duty Cycle
R(t) (°C/W)
0.1
0.01
RqJC = 0.50
20%
10%
5%
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
2%
Junction R1
0.001
Single Pulse
0.0001
0.000001
Rn Case
Ci = ti/Ri
C1
0.00001
R2
0.0001
0.001
C2
Cn
0.01
0.1
Ri (°C/W)
ti (sec)
0.064185
0.060802
0.050673
0.170671
0.142159
0.009510
0.00004
0.001558
0.005201
0.019734
0.018529
0.070344
3.325233
26863.47
1
10
PULSE TIME (sec)
Figure 19. IGBT Transient Thermal Impedance
10
R(t) (°C/W)
RqJC = 1.46
1
50% Duty Cycle
20%
0.1
Junction R1
10%
5%
2%
Rn
C2
Cn
Ci = ti/Ri
C1
Single Pulse
0.01
0.000001
R2
0.00001
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.0001
0.01
0.01
PULSE TIME (sec)
Figure 20. Diode Transient Thermal Impedance
Figure 21. Test Circuit for Switching Characteristics
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Case
Ri (°C/W)
ti (sec)
0.026867
0.000237
0.034915
0.039625
0.087617
0.161215
0.336873
0.265205
0.361515
0.148056
0.000037
0.013344
0.000286
0.000798
0.001141
0.001962
0.002968
0.011924
0.027661
0.213586
0.1
1
NGTB40N65IHL2WG
Figure 22. Definition of Turn On Waveform
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7
NGTB40N65IHL2WG
Figure 23. Definition of Turn Off Waveform
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8
NGTB40N65IHL2WG
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE A
E
E2/2
B
A
NOTE 4
SEATING
PLANE
Q
E2
NOTE 4
D
0.635
2
S
4
2X
NOTE 5
b2
c
b4
3X
e
b
0.25
A1
NOTE 7
M
B A
M
DIM
A
A1
b
b2
b4
c
D
E
E2
e
L
L1
P
Q
S
3
L1
L
B A
NOTE 6
NOTE 3
1
M
P
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
M
MILLIMETERS
MIN
MAX
4.70
5.30
2.20
2.60
1.00
1.40
1.65
2.35
2.60
3.40
0.40
0.80
20.30
21.40
15.50
16.25
4.32
5.49
5.45 BSC
19.80
20.80
3.50
4.50
3.55
3.65
5.40
6.20
6.15 BSC
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NGTB40N65IHL2W/D