NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. www.onsemi.com 20 AMPS, 400 VOLTS VCE(on) = 1.3 V @ IC = 10 A, VGE . 4.5 V Features • Ideal for Coil−on−Plug and Driver−on−Coil Applications • Gate−Emitter ESD Protection • Temperature Compensated Gate−Collector Voltage Clamp Limits C Stress Applied to Load • Integrated ESD Diode Protection • Low Threshold Voltage for Interfacing Power Loads to Logic or RG G Microprocessor Devices RGE • Low Saturation Voltage • High Pulsed Current Capability • These are Pb−Free Devices E Applications D2PAK CASE 418B STYLE 4 • Ignition Systems 1 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage VCES 440 V Collector−Gate Voltage VCER 440 V Gate−Emitter Voltage VGE "15 V Collector Current−Continuous @ TC = 25°C − Pulsed IC 20 50 ADC AAC Continuous Gate Current IG 1.0 mA Transient Gate Current (t≤2 ms, f≤100 Hz) IG 20 mA ESD (Charged−Device Model) ESD 2.0 kV ESD (Human Body Model) R = 1500 W, C = 100 pF ESD ESD (Machine Model) R = 0 W, C = 200 pF ESD 500 V PD 150 1.0 W W/°C TJ, Tstg −55 to +175 °C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating & Storage Temperature Range kV 8.0 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. MARKING DIAGRAM 4 Collector GB 8202xxG AYWW 1 Gate 3 Emitter 2 Collector GB8202xx = Device Code xx = N or AN A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device Package Shipping† D2PAK (Pb−Free) 800/Tape & Reel NGB8202NT4G NGB8202ANT4G NGB8202ANTF4G 700/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 June, 2016 − Rev. 8 1 Publication Order Number: NGB8202N/D NGB8202N, NGB8202AN UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C) Characteristic Symbol Single Pulse Collector−to−Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 16.7 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 25°C VCC = 50 V, VGE = 5.0 V, Pk IL = 14.9 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 150°C VCC = 50 V, VGE = 5.0 V, Pk IL = 14.1 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 175°C Reverse Avalanche Energy VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C Value EAS Unit mJ 250 200 180 EAS(R) mJ 2000 THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Case RqJC 1.0 °C/W Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 62.5 °C/W TL 275 °C Maximum Temperature for Soldering Purposes, 1/8″ from case for 5 seconds (Note 2) 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D. ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit BVCES IC = 2.0 mA TJ = −40°C to 175°C 370 395 420 V IC = 10 mA TJ = −40°C to 175°C 390 415 440 VGE = 0 V, VCE = 15 V TJ = 25°C 0.1 1.0 mA mA OFF CHARACTERISTICS Collector−Emitter Clamp Voltage Zero Gate Voltage Collector Current ICES VCE = 200 V, VGE = 0 V Reverse Collector−Emitter Clamp Voltage BVCES(R) IC = −75 mA Reverse Collector−Emitter Leakage Current ICES(R) VCE = −24 V − NGB8202N VCE = −24 V − NGB8202AN Gate−Emitter Clamp Voltage Gate−Emitter Leakage Current TJ = 25°C 0.5 1.5 10 TJ = 175°C 1.0 25 100* TJ = −40°C 0.4 0.8 5.0 TJ = 25°C 30 35 39 TJ = 175°C 35 39 45* TJ = −40°C 30 33 37 TJ = 25°C 0.05 0.1 0.5 TJ = 175°C 1.0 5.0 10 TJ = −40°C 0.005 0.01 0.1 TJ = 25°C 0.05 0.2 1.0 TJ = 175°C 1.0 8.5 25 TJ = −40°C 0.005 0.025 0.2 V mA BVGES IG = "5.0 mA TJ = −40°C to 175°C 12 12.5 14 V IGES VGE = "5.0 V TJ = −40°C to 175°C 200 300 350* mA W Gate Resistor RG TJ = −40°C to 175°C Gate−Emitter Resistor RGE TJ = −40°C to 175°C 14.25 70 16 25 kW TJ = 25°C 1.5 1.8 2.1 V TJ = 175°C 0.7 1.0 1.3 TJ = −40°C 1.7 2.0 2.3* 4.0 4.6 5.2 ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGE(th) IC = 1.0 mA, VGE = VCE Threshold Temperature Coefficient (Negative) *Maximum Value of Characteristic across Temperature Range. 3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. www.onsemi.com 2 mV/°C NGB8202N, NGB8202AN ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit TJ = 25°C 0.95 1.15 1.35 V TJ = 175°C 0.7 0.95 1.15 TJ = −40°C 1.0 1.3 1.4 TJ = 25°C 0.85 1.03 1.35 TJ = 175°C 0.7 0.9 1.15 TJ = −40°C 0.0 1.11 1.4 TJ = 25°C 0.95 1.25 1.45 TJ = 175°C 0.8 1.05 1.25 TJ = −40°C 1.1 1.4 1.5 TJ = 25°C 0.9 1.11 1.45 TJ = 175°C 0.8 1.01 1.25 TJ = −40°C 1.0 1.18 1.5 TJ = 25°C 0.85 1.15 1.4 TJ = 175°C 0.7 0.95 1.2 TJ = −40°C 1.0 1.3 1.6* TJ = 25°C 1.0 1.3 1.6 TJ = 175°C 0.8 1.05 1.4 TJ = −40°C 1.1 1.4 1.7* TJ = 25°C 1.15 1.45 1.7 TJ = 175°C 1.0 1.3 1.55 TJ = −40°C 1.25 1.55 1.8* TJ = 25°C 1.3 1.6 1.9 TJ = 175°C 1.2 1.5 1.8 TJ = −40°C 1.4 1.75 2.0 TJ = 25°C 1.1 1.4 1.9 TJ = 175°C 1.2 1.5 1.8 TJ = −40°C 1.3 1.42 2.0 TJ = 25°C 10 18 25 Mhos 1100 1300 1500 pF 70 80 90 18 20 22 ON CHARACTERISTICS (Note 4) Collector−to−Emitter On−Voltage VCE(on) IC = 6.5 A, VGE = 3.7 V − NGB8202N IC = 6.5 A, VGE = 3.7 V − NGB8202AN IC = 9.0 A, VGE = 3.9 V − NGB8202N IC = 9.0 A, VGE = 3.9 V − NGB8202AN IC = 7.5 A, VGE = 4.5 V IC = 10 A, VGE = 4.5 V IC = 15 A, VGE = 4.5 V IC = 20 A, VGE = 4.5 V − NGB8202N IC = 20 A, VGE = 4.5 V − NGB8202AN Forward Transconductance gfs IC = 6.0 A, VCE = 5.0 V DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Transfer Capacitance CRSS f = 10 kHz, VCE = 25 V www.onsemi.com 3 TJ = 25°C NGB8202N, NGB8202AN ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit TJ = 25°C 6.0 8.0 10 mSec TJ = 175°C 6.0 8.0 10 TJ = 25°C 4.0 6.0 8.0 TJ = 175°C 8.0 10.5 14 SWITCHING CHARACTERISTICS Turn−Off Delay Time (Resistive) Fall Time (Resistive) Turn−Off Delay Time (Inductive) Fall Time (Inductive) Turn−On Delay Time Rise Time td(off) tf VCC = 300 V, IC = 9.0 A RG = 1.0 kW, RL = 33 W, VGE = 5.0 V td(off) tf VCC = 300 V, IC = 9.0 A RG = 1.0 kW, L = 300 mH, VGE = 5.0 V td(on) tr VCC = 14 V, IC = 9.0 A RG = 1.0 kW, RL = 1.5 W, VGE = 5.0 V TJ = 25°C 3.0 5.0 7.0 TJ = 175°C 5.0 7.0 9.0 TJ = 25°C 1.5 3.0 4.5 TJ = 175°C 5.0 7.0 10 TJ = 25°C 1.0 1.5 2.0 TJ = 175°C 1.0 1.5 2.0 TJ = 25°C 4.0 6.0 8.0 TJ = 175°C 3.0 5.0 7.0 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Maximum Value of Characteristic across Temperature Range. 4. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. www.onsemi.com 4 NGB8202N, NGB8202AN TYPICAL ELECTRICAL CHARACTERISTICS 30 SCIS ENERGY (mJ) 350 IA, AVALANCHE CURRENT (A) 400 TJ = 25°C 300 250 TJ = 175°C 200 150 100 VCC = 14 V VGE = 5.0 V RG = 1000 W 50 0 2 0 6 4 L = 1.8 mH 20 L = 3.0 mH 15 10 L = 10 mH 5 0 −50 10 8 VCC = 14 V VGE = 5.0 V RG = 1000 W 25 −25 INDUCTOR (mH) 75 100 125 VGE = 10 V IC = 25 A 1.75 IC = 20 A 1.5 IC = 15 A 1.25 IC = 10 A 1.0 IC = 7.5 A 0.75 0.5 VGE = 4.5 V 50 150 175 4.5 V 5V 4V TJ = 175°C 40 3.5 V 30 3V 20 2.5 V 10 0 −25 0 25 50 75 100 125 150 0 175 1 2 3 4 5 6 7 8 VCE, COLLECTOR TO EMITTER VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 3. Collector−to−Emitter Voltage vs. Junction Temperature Figure 4. Collector Current vs. Collector−to−Emitter Voltage 60 60 VGE = 10 V VGE = 10 V 4.5 V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 50 60 2.0 0.0 −50 25 Figure 2. Open Secondary Avalanche Current vs. Temperature IC, COLLECTOR CURRENT (A) VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 1. Self Clamped Inductive Switching 0.25 0 TJ, JUNCTION TEMPERATURE (°C) 4V 50 5V 40 TJ = 25°C 3.5 V 30 20 3V 10 2.5 V 4.5 V 4V 50 5V 40 TJ = −40°C 3.5 V 30 20 3V 10 2.5 V 0 0 0 1 2 3 4 5 6 7 8 0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 1 2 3 4 5 6 7 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 5. Collector Current vs. Collector−to−Emitter Voltage Figure 6. Collector Current vs. Collector−to−Emitter Voltage www.onsemi.com 5 8 NGB8202N, NGB8202AN TYPICAL ELECTRICAL CHARACTERISTICS 10000 COLLECTOR TO EMITTER LEAKAGE CURRENT (mA) IC, COLLECTOR CURRENT (A) 45 VCE = 5 V 40 1000 35 30 25 20 TJ = 25°C 15 10 TJ = 175°C 5 TJ = −40°C 0 0 1 0.5 1.5 2 2.5 3 3.5 4 10 VCE = 200 V 1.0 0.1 −50 −25 0 25 75 50 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) Figure 7. Transfer Characteristics Figure 8. Collector−to−Emitter Leakage Current vs. Temperature 10000 2.25 Mean Mean + 4 s 2.00 C, CAPACITANCE (pF) GATE THRESHOLD VOLTAGE (V) 100 VGE, GATE TO EMITTER VOLTAGE (V) 2.50 1.75 Mean − 4 s 1.50 1.25 1.00 0.75 0.50 Ciss 1000 Coss 100 Crss 10 1.0 0.25 0 −50 0.1 −25 0 25 50 75 100 125 150 175 0 10 15 20 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 9. Gate Threshold Voltage vs. Temperature Figure 10. Capacitance vs. Collector−to−Emitter Voltage 25 12 10 10 SWITCHING TIME (ms) tfall 8 tdelay 6 VCC = 300 V VGE = 5.0 V RG = 1000 W IC = 9.0 A RL = 33 W 4 2 0 25 5 TJ, JUNCTION TEMPERATURE (°C) 12 SWITCHING TIME (ms) VCE = −24 V 50 75 100 125 150 8 VCC = 300 V VGE = 5.0 V RG = 1000 W IC = 9.0 A L = 300 mH tdelay 6 tfall 4 2 0 25 175 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 11. Resistive Switching Fall Time vs. Temperature Figure 12. Inductive Switching Fall Time vs. Temperature www.onsemi.com 6 175 R(t), TRANSIENT THERMAL RESISTANCE (°C/Watt) NGB8202N, NGB8202AN 100 Duty Cycle = 0.5 0.2 10 0.1 1 0.02 0.05 0.01 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 P(pk) t1 0.1 t2 Single Pulse DUTY CYCLE, D = t1/t2 0.01 0.000001 0.00001 0.0001 0.001 0.1 0.01 TJ(pk) − TA = P(pk) RqJA(t) For D=1: RqJC X R(t) for t ≤ 0.1 s 1 10 100 1000 t,TIME (S) RqJC(t), TRANSIENT THERMAL RESISTANCE (°C/Watt) Figure 13. Minimum Pad Transient Thermal Resistance (Non−normalized Junction−to−Ambient) 1 Duty Cycle = 0.5 0.2 0.1 0.1 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 P(pk) 0.05 t1 0.02 t2 0.01 0.01 0.000001 TJ(pk) − TA = P(pk) RqJC(t) DUTY CYCLE, D = t1/t2 Single Pulse 0.00001 0.0001 0.001 0.01 t,TIME (S) Figure 14. Best Case Transient Thermal Resistance (Non−normalized Junction−to−Case Mounted on Cold Plate) www.onsemi.com 7 0.1 1 NGB8202N, NGB8202AN PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E V W −B− 4 INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.340 0.380 8.64 9.65 B 0.380 0.405 9.65 10.29 C 0.160 0.190 4.06 4.83 D 0.020 0.035 0.51 0.89 E 0.045 0.055 1.14 1.40 F 0.310 0.350 7.87 8.89 G 0.100 BSC 2.54 BSC H 0.080 0.110 2.03 2.79 J 0.018 0.025 0.46 0.64 K 0.090 0.110 2.29 2.79 L 0.052 0.072 1.32 1.83 M 0.280 0.320 7.11 8.13 N 0.197 REF 5.00 REF P 0.079 REF 2.00 REF R 0.039 REF 0.99 REF S 0.575 0.625 14.60 15.88 V 0.045 0.055 1.14 1.40 STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR A 1 2 S 3 −T− SEATING PLANE K W J G D 3 PL 0.13 (0.005) H M T B M P SOLDERING FOOTPRINT* U L 10.49 M 8.38 16.155 F VIEW W−W 2X 3.504 2X 1.016 5.080 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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