NGTG50N60FW D

NGTG50N60FWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss.
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Features
•
•
•
•
Optimized for Very Low VCEsat
Low Switching Loss Reduces System Power Dissipation
5 ms Short−Circuit Capability
These are Pb−Free Devices
50 A, 600 V
VCEsat = 1.50 V
Typical Applications
C
• Solar Inverters
• Uninterruptible Power Supples (UPS)
• Motor Drives
G
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
VCES
600
V
Collector current
@ TC = 25°C
@ TC = 100°C
IC
E
A
100
50
Pulsed collector current, Tpulse
limited by TJmax
ICM
200
A
Short−circuit withstand time
VGE = 15 V, VCE = 300 V,
TJ ≤ +150°C
tSC
5
ms
Gate−emitter voltage
Transient Gate−Emitter Voltage
VGE
$20
$30
V
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
Operating junction temperature
range
TJ
−55 to +150
°C
Storage temperature range
Tstg
−55 to +150
°C
Lead temperature for soldering, 1/8”
from case for 5 seconds
TSLD
260
°C
G
C
TO−247
CASE 340L
STYLE 4
E
MARKING DIAGRAM
W
223
89
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
G50N60F
AYWWG
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
NGTG50N60FWG
© Semiconductor Components Industries, LLC, 2012
December, 2012 − Rev. 0
1
Package
Shipping
TO−247 30 Units / Rail
(Pb−Free)
Publication Order Number:
NGTG50N60FW/D
NGTG50N60FWG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction−to−case, for IGBT
Rating
RqJC
0.56
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
600
−
−
V
VGE = 15 V, IC = 50 A
VGE = 15 V, IC = 50 A, TJ = 150°C
VCEsat
1.25
−
1.45
1.7
1.7
−
V
VGE = VCE, IC = 350 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 150°C
ICES
−
−
−
−
0.5
2
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V , VCE = 0 V
IGES
−
−
200
nA
Cies
−
7300
−
pF
Coes
−
195
−
Cres
−
170
−
Qg
−
310
−
Qge
−
60
−
Qgc
−
150
−
td(on)
−
117
−
tr
−
43
−
td(off)
−
285
−
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
VCE = 480 V, IC = 50 A, VGE = 15 V
Gate to collector charge
nC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
TJ = 25°C
VCC = 400 V, IC = 50 A
Rg = 10 W
VGE = 0 V/ 15 V*
tf
−
105
−
Eon
−
1.1
−
Turn−off switching loss
Eoff
−
1.2
−
Total switching loss
Ets
−
2.3
−
Turn−on delay time
td(on)
−
112
−
tr
−
45
−
td(off)
−
300
−
tf
−
214
−
Eon
−
1.4
−
Turn−off switching loss
Eoff
−
2.0
−
Total switching loss
Ets
−
3.4
−
Turn−on switching loss
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 150°C
VCC = 400 V, IC = 50 A
Rg = 10 W
VGE = 0 V/ 15 V*
*Includes diode reverse recovery loss using NGTB50N60FWG.
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2
ns
mJ
ns
mJ
NGTG50N60FWG
TYPICAL CHARACTERISTICS
250
TJ = 25°C
200
11 V
150
10 V
100
9V
50
7V
0
1
2
3
4
8V
5
6
10 V
100
9V
50
8V
7V
0
1
2
3
4
5
6
7
Figure 1. Output Characteristics
Figure 2. Output Characteristics
11 V
150
10 V
100
50
9V
7 V to 8 V
1
2
3
4
5
6
7
8
200
TJ = −40°C
VGE = 17 V to 13 V
0
11 V
150
VCE, COLLECTOR−EMITTER VOLTAGE (V)
200
0
200
0
8
VGE = 17 V to 13 V
TJ = 150°C
VCE, COLLECTOR−EMITTER VOLTAGE (V)
250
IC, COLLECTOR CURRENT (A)
7
IC, COLLECTOR CURRENT (A)
0
VCE, COLLECTOR−EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
VGE = 17 V to 13 V
180
160
TJ = 150°C
TJ = 25°C
140
120
100
80
60
40
20
0
8
0
4
8
16
12
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
3.0
10000
Cies
IC = 100 A
2.5
2.0
IC = 50 A
1.5
IC = 10 A
1.0
IC = 5 A
CAPACITANCE (pF)
IC, COLLECTOR CURRENT (A)
250
1000
Coes
100
Cres
0.5
0
−75
−25
25
75
125
175
10
0
10
20
30
40
50
60
70
80
90 100
TJ, JUNCTION TEMPERATURE (°C)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs. TJ
Figure 6. Typical Capacitance
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3
NGTG50N60FWG
TYPICAL CHARACTERISTICS
VGE, GATE−EMITTER VOLTAGE (V)
20
VCE = 480 V
15
10
5
0
50
0
100
150
200
250
300
350
QG, GATE CHARGE (nC)
Figure 7. Typical Gate Charge
td(off)
SWITCHING TIME (ns)
2
Eoff
1.5
Eon
1.0
0.5
0
0
4.5
20
40
60
80
100
120
140
3.5
3
td(on)
100
tf
tr
10
1
160
VCE = 400 V
VGE = 15 V
IC = 50 A
Rg = 10 W
0
60
80
100
120
140 160
Figure 8. Switching Loss vs. Temperature
Figure 9. Switching Time vs. Temperature
1000
tf
Eoff
Eon
2
1.5
1
td(off)
100
td(on)
tr
10
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
0.5
8
40
TJ, JUNCTION TEMPERATURE (°C)
2.5
0
20
TJ, JUNCTION TEMPERATURE (°C)
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
4
SWITCHING LOSS (mJ)
1000
VCE = 400 V
VGE = 15 V
IC = 50 A
Rg = 10 W
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
2.5
20
32
44
56
68
80
92
1
104
8
20
32
44
56
68
80
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 10. Switching Loss vs. IC
Figure 11. Switching Time vs. IC
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4
92
104
NGTG50N60FWG
TYPICAL CHARACTERISTICS
6
SWITCHING LOSS (mJ)
10,000
VCE = 400 V
VGE = 15 V
IC = 50 A
TJ = 150°C
5
Eon
SWITCHING TIME (ns)
7
4
3
Eoff
2
1000
td(off)
100
td(on)
tf
tr
VCE = 400 V
VGE = 15 V
IC = 50 A
TJ = 150°C
10
1
5
3
25
35
45
55
65
75
1
85
45
55
65
75
275
85
1000
td(off)
Eoff
0.6
325
375
425
475
525
tf
td(on)
100
tr
10
VGE = 15 V
IC = 50 A
Rg = 10 W
TJ = 150°C
1
175
575
225
275
325
375
425
475
525
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 14. Switching Loss vs. VCE
Figure 15. Switching Time vs. VCE
1000
575
1000
100 ms
100
1 ms
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
35
Figure 13. Switching Time vs. Rg
1.2
50 ms
dc operation
10
1
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
0.1
0.01
25
Figure 12. Switching Loss vs. Rg
Eon
225
15
Rg, GATE RESISTOR (W)
1.8
0
175
5
Rg, GATE RESISTOR (W)
VGE = 15 V
IC = 50 A
Rg = 10 W
TJ = 150°C
2.4
SWITCHING LOSS (mJ)
15
SWITCHING TIME (ns)
0
1
10
100
1000
100
10
VGE = 15 V, TC = 125°C
1
1
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 16. Safe Operating Area
Figure 17. Reverse Bias Safe Operating Area
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NGTG50N60FWG
TYPICAL CHARACTERISTICS
1
50% Duty Cycle
RqJC = 0.56
20%
R(t) (°C/W)
0.1
10%
Junction R1
5%
1%
C1
C2
Cn
Ri (°C/W)
Case
0.00001
ti (sec)
0.02087
0.05041
0.07919
0.11425
0.19393
1.0E−4
6.84E−5
0.002
0.03
0.1
0.09951
2.0
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.001
0.000001
Rn
Ci = ti/Ri
2%
0.01
R2
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 18. IGBT Transient Thermal Impedance
Figure 19. Test Circuit for Switching Characteristics
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6
10
100
1000
NGTG50N60FWG
Figure 20. Definition of Turn On Waveform
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7
NGTG50N60FWG
Figure 21. Definition of Turn Off Waveform
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8
NGTG50N60FWG
PACKAGE DIMENSIONS
TO−247
CASE 340L−02
ISSUE F
−T−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
C
−B−
E
U
N
L
4
A
−Q−
1
2
0.63 (0.025)
3
M
T B
M
P
−Y−
K
F 2 PL
W
J
D 3 PL
0.25 (0.010)
M
Y Q
MILLIMETERS
MIN
MAX
20.32
21.08
15.75
16.26
4.70
5.30
1.00
1.40
1.90
2.60
1.65
2.13
5.45 BSC
1.50
2.49
0.40
0.80
19.81
20.83
5.40
6.20
4.32
5.49
--4.50
3.55
3.65
6.15 BSC
2.87
3.12
STYLE 4:
PIN 1.
2.
3.
4.
H
G
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
U
W
INCHES
MIN
MAX
0.800
8.30
0.620
0.640
0.185
0.209
0.040
0.055
0.075
0.102
0.065
0.084
0.215 BSC
0.059
0.098
0.016
0.031
0.780
0.820
0.212
0.244
0.170
0.216
--0.177
0.140
0.144
0.242 BSC
0.113
0.123
GATE
COLLECTOR
EMITTER
COLLECTOR
S
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NGTG50N60FWD