NGTG50N60FWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http://onsemi.com Features • • • • Optimized for Very Low VCEsat Low Switching Loss Reduces System Power Dissipation 5 ms Short−Circuit Capability These are Pb−Free Devices 50 A, 600 V VCEsat = 1.50 V Typical Applications C • Solar Inverters • Uninterruptible Power Supples (UPS) • Motor Drives G ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage VCES 600 V Collector current @ TC = 25°C @ TC = 100°C IC E A 100 50 Pulsed collector current, Tpulse limited by TJmax ICM 200 A Short−circuit withstand time VGE = 15 V, VCE = 300 V, TJ ≤ +150°C tSC 5 ms Gate−emitter voltage Transient Gate−Emitter Voltage VGE $20 $30 V Power Dissipation @ TC = 25°C @ TC = 100°C PD Operating junction temperature range TJ −55 to +150 °C Storage temperature range Tstg −55 to +150 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C G C TO−247 CASE 340L STYLE 4 E MARKING DIAGRAM W 223 89 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. G50N60F AYWWG A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NGTG50N60FWG © Semiconductor Components Industries, LLC, 2012 December, 2012 − Rev. 0 1 Package Shipping TO−247 30 Units / Rail (Pb−Free) Publication Order Number: NGTG50N60FW/D NGTG50N60FWG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.56 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 600 − − V VGE = 15 V, IC = 50 A VGE = 15 V, IC = 50 A, TJ = 150°C VCEsat 1.25 − 1.45 1.7 1.7 − V VGE = VCE, IC = 350 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 150°C ICES − − − − 0.5 2 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 200 nA Cies − 7300 − pF Coes − 195 − Cres − 170 − Qg − 310 − Qge − 60 − Qgc − 150 − td(on) − 117 − tr − 43 − td(off) − 285 − STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 480 V, IC = 50 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time TJ = 25°C VCC = 400 V, IC = 50 A Rg = 10 W VGE = 0 V/ 15 V* tf − 105 − Eon − 1.1 − Turn−off switching loss Eoff − 1.2 − Total switching loss Ets − 2.3 − Turn−on delay time td(on) − 112 − tr − 45 − td(off) − 300 − tf − 214 − Eon − 1.4 − Turn−off switching loss Eoff − 2.0 − Total switching loss Ets − 3.4 − Turn−on switching loss Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 150°C VCC = 400 V, IC = 50 A Rg = 10 W VGE = 0 V/ 15 V* *Includes diode reverse recovery loss using NGTB50N60FWG. http://onsemi.com 2 ns mJ ns mJ NGTG50N60FWG TYPICAL CHARACTERISTICS 250 TJ = 25°C 200 11 V 150 10 V 100 9V 50 7V 0 1 2 3 4 8V 5 6 10 V 100 9V 50 8V 7V 0 1 2 3 4 5 6 7 Figure 1. Output Characteristics Figure 2. Output Characteristics 11 V 150 10 V 100 50 9V 7 V to 8 V 1 2 3 4 5 6 7 8 200 TJ = −40°C VGE = 17 V to 13 V 0 11 V 150 VCE, COLLECTOR−EMITTER VOLTAGE (V) 200 0 200 0 8 VGE = 17 V to 13 V TJ = 150°C VCE, COLLECTOR−EMITTER VOLTAGE (V) 250 IC, COLLECTOR CURRENT (A) 7 IC, COLLECTOR CURRENT (A) 0 VCE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) VGE = 17 V to 13 V 180 160 TJ = 150°C TJ = 25°C 140 120 100 80 60 40 20 0 8 0 4 8 16 12 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 3.0 10000 Cies IC = 100 A 2.5 2.0 IC = 50 A 1.5 IC = 10 A 1.0 IC = 5 A CAPACITANCE (pF) IC, COLLECTOR CURRENT (A) 250 1000 Coes 100 Cres 0.5 0 −75 −25 25 75 125 175 10 0 10 20 30 40 50 60 70 80 90 100 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance http://onsemi.com 3 NGTG50N60FWG TYPICAL CHARACTERISTICS VGE, GATE−EMITTER VOLTAGE (V) 20 VCE = 480 V 15 10 5 0 50 0 100 150 200 250 300 350 QG, GATE CHARGE (nC) Figure 7. Typical Gate Charge td(off) SWITCHING TIME (ns) 2 Eoff 1.5 Eon 1.0 0.5 0 0 4.5 20 40 60 80 100 120 140 3.5 3 td(on) 100 tf tr 10 1 160 VCE = 400 V VGE = 15 V IC = 50 A Rg = 10 W 0 60 80 100 120 140 160 Figure 8. Switching Loss vs. Temperature Figure 9. Switching Time vs. Temperature 1000 tf Eoff Eon 2 1.5 1 td(off) 100 td(on) tr 10 VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W 0.5 8 40 TJ, JUNCTION TEMPERATURE (°C) 2.5 0 20 TJ, JUNCTION TEMPERATURE (°C) VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W 4 SWITCHING LOSS (mJ) 1000 VCE = 400 V VGE = 15 V IC = 50 A Rg = 10 W SWITCHING TIME (ns) SWITCHING LOSS (mJ) 2.5 20 32 44 56 68 80 92 1 104 8 20 32 44 56 68 80 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 10. Switching Loss vs. IC Figure 11. Switching Time vs. IC http://onsemi.com 4 92 104 NGTG50N60FWG TYPICAL CHARACTERISTICS 6 SWITCHING LOSS (mJ) 10,000 VCE = 400 V VGE = 15 V IC = 50 A TJ = 150°C 5 Eon SWITCHING TIME (ns) 7 4 3 Eoff 2 1000 td(off) 100 td(on) tf tr VCE = 400 V VGE = 15 V IC = 50 A TJ = 150°C 10 1 5 3 25 35 45 55 65 75 1 85 45 55 65 75 275 85 1000 td(off) Eoff 0.6 325 375 425 475 525 tf td(on) 100 tr 10 VGE = 15 V IC = 50 A Rg = 10 W TJ = 150°C 1 175 575 225 275 325 375 425 475 525 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 14. Switching Loss vs. VCE Figure 15. Switching Time vs. VCE 1000 575 1000 100 ms 100 1 ms IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 35 Figure 13. Switching Time vs. Rg 1.2 50 ms dc operation 10 1 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 0.1 0.01 25 Figure 12. Switching Loss vs. Rg Eon 225 15 Rg, GATE RESISTOR (W) 1.8 0 175 5 Rg, GATE RESISTOR (W) VGE = 15 V IC = 50 A Rg = 10 W TJ = 150°C 2.4 SWITCHING LOSS (mJ) 15 SWITCHING TIME (ns) 0 1 10 100 1000 100 10 VGE = 15 V, TC = 125°C 1 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 16. Safe Operating Area Figure 17. Reverse Bias Safe Operating Area http://onsemi.com 5 NGTG50N60FWG TYPICAL CHARACTERISTICS 1 50% Duty Cycle RqJC = 0.56 20% R(t) (°C/W) 0.1 10% Junction R1 5% 1% C1 C2 Cn Ri (°C/W) Case 0.00001 ti (sec) 0.02087 0.05041 0.07919 0.11425 0.19393 1.0E−4 6.84E−5 0.002 0.03 0.1 0.09951 2.0 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.001 0.000001 Rn Ci = ti/Ri 2% 0.01 R2 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 18. IGBT Transient Thermal Impedance Figure 19. Test Circuit for Switching Characteristics http://onsemi.com 6 10 100 1000 NGTG50N60FWG Figure 20. Definition of Turn On Waveform http://onsemi.com 7 NGTG50N60FWG Figure 21. Definition of Turn Off Waveform http://onsemi.com 8 NGTG50N60FWG PACKAGE DIMENSIONS TO−247 CASE 340L−02 ISSUE F −T− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. C −B− E U N L 4 A −Q− 1 2 0.63 (0.025) 3 M T B M P −Y− K F 2 PL W J D 3 PL 0.25 (0.010) M Y Q MILLIMETERS MIN MAX 20.32 21.08 15.75 16.26 4.70 5.30 1.00 1.40 1.90 2.60 1.65 2.13 5.45 BSC 1.50 2.49 0.40 0.80 19.81 20.83 5.40 6.20 4.32 5.49 --4.50 3.55 3.65 6.15 BSC 2.87 3.12 STYLE 4: PIN 1. 2. 3. 4. H G DIM A B C D E F G H J K L N P Q U W INCHES MIN MAX 0.800 8.30 0.620 0.640 0.185 0.209 0.040 0.055 0.075 0.102 0.065 0.084 0.215 BSC 0.059 0.098 0.016 0.031 0.780 0.820 0.212 0.244 0.170 0.216 --0.177 0.140 0.144 0.242 BSC 0.113 0.123 GATE COLLECTOR EMITTER COLLECTOR S ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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