NGTG30N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http://onsemi.com Features • • • • • Low Saturation Voltage using Trench with Field Stop Technology Low Switching Loss Reduces System Power Dissipation Optimized for High Speed Switching 5 ms Short−Circuit Capability These are Pb−Free Devices 30 A, 600 V VCEsat = 1.65 V C Typical Applications • Power Factor Correction • Solar Inverters • Uninterruptable Power Supply (UPS) G ABSOLUTE MAXIMUM RATINGS Rating E Symbol Value Unit Collector−emitter voltage VCES 600 V Collector current @ TC = 25°C @ TC = 100°C IC Pulsed collector current, Tpulse limited by TJmax Diode Forward Current @ TC = 25°C @ TC = 100°C ICM IF A 60 30 120 A G C TO−247 CASE 340L STYLE 4 E A 60 30 Diode Pulsed Current Tpulse Limited by TJmax IFM 120 A Short−circuit withstand time VGE = 15 V, VCE = 300 V, TJ ≤ +150°C tSC 5 ms Gate−emitter voltage Transient Gate Emitter Voltage (tp = 5 ms, D < 0.010) VGE $20 $30 V Power Dissipation @ TC = 25°C @ TC = 100°C PD Operating junction temperature range TJ −55 to +150 °C Storage temperature range Tstg −55 to +150 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C MARKING DIAGRAM G30N60FL AYWWG W 250 67 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NGTG30N60FLWG © Semiconductor Components Industries, LLC, 2013 June, 2013 − Rev. 2 1 Package Shipping TO−247 30 Units / Rail (Pb−Free) Publication Order Number: NGTG30N60FLW/D NGTG30N60FLWG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.486 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 600 − − V VGE = 15 V, IC = 30 A VGE = 15 V, IC = 30 A, TJ = 150°C VCEsat 1.4 − 1.65 2.0 1.9 − V VGE = VCE, IC = 200 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 150°C ICES − − − − 0.2 2 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 100 nA Cies − 4200 − pF Coes − 130 − Cres − 110 − Gate charge total Qg − 170 − Gate to emitter charge Qge − 34 − Qgc − 83 − td(on) − 83 − tr − 31 − td(off) − 170 − tf − 80 − Eon − 0.7 − Eoff − 0.28 − Total switching loss Ets − 0.98 − Turn−on delay time td(on) − 81 − tr − 32 − td(off) − 180 − tf − 110 − Eon − 0.82 − Turn−off switching loss Eoff − 0.63 − Total switching loss Ets − 1.45 − STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance VCE = 480 V, IC = 30 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 25°C VCC = 400 V, IC = 30 A Rg = 10 W VGE = 0 V/ 15 V Turn−off switching loss Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 150°C VCC = 400 V, IC = 30 A Rg = 10 W VGE = 0 V/ 15 V http://onsemi.com 2 ns mJ ns mJ NGTG30N60FLWG TYPICAL CHARACTERISTICS 180 TJ = 25°C 160 140 120 100 11 V 80 10 V 60 40 9V 20 7V 0 1 3 4 6 5 7 100 11 V 80 60 10 V 40 9V 20 8V 7V 0 1 2 3 4 5 6 7 Figure 1. Output Characteristics Figure 2. Output Characteristics TJ = −55°C 140 120 11 V 100 80 60 10 V 40 9V 20 7 V to 8 V 1 2 3 4 8 160 VGE = 17 V to 13 V 0 120 VCE, COLLECTOR−EMITTER VOLTAGE (V) 160 0 140 0 8 VGE = 17 V to 13 V TJ = 150°C 160 VCE, COLLECTOR−EMITTER VOLTAGE (V) 180 IC, COLLECTOR CURRENT (A) 2 8V IC, COLLECTOR CURRENT (A) 0 VCE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) VGE = 17 V to 13 V 5 6 7 140 TJ = 25°C 120 TJ = 150°C 100 80 60 40 20 0 8 0 4 8 16 12 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 3.0 10,000 Cies IC = 60 A 2.5 IC = 30 A 2.0 IC = 15 A 1.5 IC = 5 A 1.0 CAPACITANCE (pF) IC, COLLECTOR CURRENT (A) 200 180 1000 100 Coes Cres 0.5 0 −75 −25 25 75 125 175 10 0 20 40 60 80 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance http://onsemi.com 3 100 NGTG30N60FLWG TYPICAL CHARACTERISTICS VGE, GATE−EMITTER VOLTAGE (V) 20 VCE = 480 V 15 10 5 0 25 0 50 75 100 125 150 175 200 QG, GATE CHARGE (nC) Figure 7. Typical Gate Charge 0.9 1000 Eoff 0.6 Eon 0.5 0.4 0.3 VCE = 400 V VGE = 15 V IC = 30 A Rg = 10 W 0.2 0.1 0 0 2 20 40 60 80 100 1.6 1.4 120 140 td(off) 10 VCE = 400 V VGE = 15 V IC = 30 A Rg = 10 W 0 40 60 80 100 120 140 160 Figure 8. Switching Loss vs. Temperature Figure 9. Switching Time vs. Temperature 1000 Eon 1 0.8 Eoff 0.6 0.4 td(off) tf 100 td(on) tr 10 VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W 0.2 8 20 TJ, JUNCTION TEMPERATURE (°C) 1.2 0 td(on) tr 1 160 tf 100 TJ, JUNCTION TEMPERATURE (°C) VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W 1.8 SWITCHING LOSS (mJ) SWITCHING TIME (ns) 0.7 SWITCHING TIME (ns) SWITCHING LOSS (mJ) 0.8 16 24 32 40 48 56 1 64 8 16 24 32 40 48 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 10. Switching Loss vs. IC Figure 11. Switching Time vs. IC http://onsemi.com 4 56 64 NGTG30N60FLWG TYPICAL CHARACTERISTICS 2.5 SWITCHING LOSS (mJ) 1000 VCE = 400 V VGE = 15 V IC = 30 A TJ = 150°C 2 td(off) Eon SWITCHING TIME (ns) 3 1.5 Eoff 1 0.5 5 SWITCHING LOSS (mJ) 1.8 15 25 35 45 55 65 15 25 35 45 55 65 75 85 1000 Eon 275 325 375 425 475 525 td(off) tf 100 td(on) 10 tr VGE = 15 V IC = 30 A Rg = 10 W TJ = 150°C 1 175 575 225 275 325 375 425 475 525 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 14. Switching Loss vs. VCE Figure 15. Switching Time vs. VCE 575 1000 100 ms 100 1 ms 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 5 Figure 13. Switching Time vs. Rg 1000 50 ms dc operation 1 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 0.1 0.01 VCE = 400 V VGE = 15 V IC = 30 A TJ = 150°C Figure 12. Switching Loss vs. Rg 0.6 225 10 Rg, GATE RESISTOR (W) Eoff 0 175 tr 1 85 td(on) Rg, GATE RESISTOR (W) VGE = 15 V IC = 30 A Rg = 10 W TJ = 150°C 1.2 75 SWITCHING TIME (ns) 0 tf 100 1 10 100 1000 100 10 1 VGE = 15 V, TC = 125°C 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 16. Safe Operating Area Figure 17. Reverse Bias Safe Operating Area http://onsemi.com 5 NGTG30N60FLWG TYPICAL CHARACTERISTICS 0.6 RqJC = 0.486 0.5 R(t) (°C/W) 0.4 0.3 50% Duty Cycle 0.2 0.1 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Junction R1 5% 20% 0 0.00001 C1 2% 0.0001 Rn Case Ci = ti/Ri Single Pulse 10% R2 0.001 0.01 C2 Cn 0.1 PULSE TIME (sec) Figure 18. IGBT Transient Thermal Impedance Figure 19. Test Circuit for Switching Characteristics http://onsemi.com 6 1 Ri (°C/W) ti (sec) 0.001111 0.001000 0.033663 0.078587 0.001016 0.009004 0.031623 0.002971 0.004024 0.984432 0.050668 0.083685 0.062412 0.119496 0.168644 0.187512 0.062579 1.597970 10 NGTG30N60FLWG Figure 20. Definition of Turn On Waveform http://onsemi.com 7 NGTG30N60FLWG Figure 21. Definition of Turn Off Waveform http://onsemi.com 8 NGTG30N60FLWG PACKAGE DIMENSIONS TO−247 CASE 340L−02 ISSUE F −T− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. C −B− E U N L 4 A −Q− 1 2 0.63 (0.025) 3 M T B M P −Y− K F 2 PL W J D 3 PL 0.25 (0.010) M Y Q MILLIMETERS MIN MAX 20.32 21.08 15.75 16.26 4.70 5.30 1.00 1.40 1.90 2.60 1.65 2.13 5.45 BSC 1.50 2.49 0.40 0.80 19.81 20.83 5.40 6.20 4.32 5.49 --4.50 3.55 3.65 6.15 BSC 2.87 3.12 STYLE 4: PIN 1. 2. 3. 4. H G DIM A B C D E F G H J K L N P Q U W INCHES MIN MAX 0.800 8.30 0.620 0.640 0.185 0.209 0.040 0.055 0.075 0.102 0.065 0.084 0.215 BSC 0.059 0.098 0.016 0.031 0.780 0.820 0.212 0.244 0.170 0.216 --0.177 0.140 0.144 0.242 BSC 0.113 0.123 GATE COLLECTOR EMITTER COLLECTOR S ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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