NGTG30N60FWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http://onsemi.com Features • • • • Optimized for Very Low VCEsat Low Switching Loss Reduces System Power Dissipation 5 ms Short−Circuit Capability These are Pb−Free Devices 30 A, 600 V VCEsat = 1.5 V Typical Applications C • Power Factor Correction ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage VCES 600 V Collector current @ TC = 25°C @ TC = 100°C IC G E A 60 30 Pulsed collector current, Tpulse limited by TJmax ICM 120 A Short−circuit withstand time VGE = 15 V, VCE = 300 V, TJ ≤ +150°C tSC 5 ms Gate−emitter voltage Transient Gate Emitter Voltage (tp = 5 ms, D < 0.010) VGE Power Dissipation @ TC = 25°C @ TC = 100°C PD Operating junction temperature range TJ −55 to +150 °C Storage temperature range Tstg −55 to +150 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C G V $20 $30 W 167 67 C TO−247 CASE 340L STYLE 4 E MARKING DIAGRAM G30N60F AYWWG Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NGTG30N60FWG © Semiconductor Components Industries, LLC, 2012 December, 2012 − Rev. 0 1 Package Shipping TO−247 30 Units / Rail (Pb−Free) Publication Order Number: NGTG30N60FW/D NGTG30N60FWG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.75 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 600 − − V VGE = 15 V, IC = 30 A VGE = 15 V, IC = 30 A, TJ = 150°C VCEsat 1.25 − 1.45 1.75 1.70 − V VGE = VCE, IC = 200 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 150°C ICES − − − − 0.2 2 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 100 nA Cies − 4100 − pF Coes − 115 − Cres − 95 − STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total Qg 170 Qge 34 Qgc 83 td(on) 81 tr 31 td(off) 190 tf 110 Eon 0.65 Eoff 0.65 Total switching loss Ets 1.30 Turn−on delay time td(on) 80 tr 32 td(off) 200 tf 230 Eon 0.80 Gate to emitter charge VCE = 480 V, IC = 30 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 25°C VCC = 400 V, IC = 30 A Rg = 10 W VGE = 0 V/ 15 V* Turn−off switching loss Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 150°C VCC = 400 V, IC = 30 A Rg = 10 W VGE = 0 V/ 15 V* Turn−off switching loss Eoff 1.1 Total switching loss Ets 1.90 *Includes diode reverse recovery loss using NGTB30N60FWG. http://onsemi.com 2 ns mJ ns mJ NGTG30N60FWG TYPICAL CHARACTERISTICS 200 TJ = 25°C 140 120 11 V 100 80 10 V 60 40 9V 20 7V 8V 0 0 1 3 4 6 5 7 140 120 100 11 V 80 10 V 60 40 9V 20 8V 7V 0 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Output Characteristics Figure 2. Output Characteristics 8 160 TJ = −55°C VGE = 17 V to 13 V 160 140 11 V 120 100 80 10 V 60 40 9V 20 0 VGE = 17 V to 13 V 160 0 8 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 2 TJ = 150°C 180 VCE, COLLECTOR−EMITTER VOLTAGE (V) 180 VCE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 160 VGE = 17 V to 13 V 7 V to 8 V 0 1 2 3 4 5 6 7 140 TJ = 25°C 120 TJ = 150°C 100 80 60 40 20 0 8 0 4 8 VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 3.0 10,000 Cies IC = 60 A 2.5 2.0 IC = 30 A 1.5 IC = 15 A IC = 5 A 1.0 1000 Coes 100 Cres 0.5 0 −75 16 12 VCE, COLLECTOR−EMITTER VOLTAGE (V) CAPACITANCE (pF) IC, COLLECTOR CURRENT (A) 180 −25 25 75 125 175 10 0 20 40 60 80 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance http://onsemi.com 3 100 NGTG30N60FWG TYPICAL CHARACTERISTICS VGE, GATE−EMITTER VOLTAGE (V) 20 VCE = 480 V 15 10 5 0 0 25 50 75 100 125 150 175 200 QG, GATE CHARGE (nC) Figure 7. Typical Gate Charge 0.8 Eoff SWITCHING TIME (ns) 1 Eon 0.6 0.4 td(off) tf 100 0 2.1 20 40 60 80 10 VCE = 400 V VGE = 15 V IC = 30 A Rg = 10 W 1.5 120 140 1 160 0 60 80 100 120 140 160 Figure 8. Switching Loss vs. Temperature Figure 9. Switching Time vs. Temperature 1000 tf Eoff Eon 0.9 0.6 td(off) td(on) 100 tr 10 VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W 0.3 8 40 TJ, JUNCTION TEMPERATURE (°C) 1.2 0 20 TJ, JUNCTION TEMPERATURE (°C) VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W 1.8 100 td(on) tr 0.2 0 SWITCHING LOSS (mJ) 1000 VCE = 400 V VGE = 15 V IC = 30 A Rg = 10 W SWITCHING TIME (ns) SWITCHING LOSS (mJ) 1.2 16 24 32 40 48 56 1 64 8 16 24 32 40 48 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 10. Switching Loss vs. IC Figure 11. Switching Time vs. IC http://onsemi.com 4 56 64 NGTG30N60FWG TYPICAL CHARACTERISTICS 2.5 SWITCHING LOSS (mJ) 1000 VCE = 400 V VGE = 15 V IC = 30 A TJ = 150°C 2 td(off) Eon 1.5 SWITCHING TIME (ns) 3 Eoff 1 0.5 5 1.8 25 35 45 1.2 55 65 75 15 25 35 45 55 65 75 85 1000 Eoff 0.3 275 325 375 425 475 525 td(off) tf 100 td(on) tr 10 VGE = 15 V IC = 30 A Rg = 10 W TJ = 150°C 1 175 575 225 275 325 375 425 475 525 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 14. Switching Loss vs. VCE Figure 15. Switching Time vs. VCE 1000 575 1000 100 ms 100 1 ms 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 5 Figure 13. Switching Time vs. Rg 0.6 50 ms dc operation 1 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 0.1 0.01 VCE = 400 V VGE = 15 V IC = 30 A TJ = 150°C Figure 12. Switching Loss vs. Rg Eon 225 10 Rg, GATE RESISTOR (W) 0.9 0 175 tr 1 85 td(on) Rg, GATE RESISTOR (W) VGE = 15 V IC = 30 A Rg = 10 W TJ = 150°C 1.5 SWITCHING LOSS (mJ) 15 SWITCHING TIME (ns) 0 tf 100 1 10 100 1000 100 10 1 VGE = 15 V, TC = 125°C 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 16. Safe Operating Area Figure 17. Reverse Bias Safe Operating Area http://onsemi.com 5 NGTG30N60FWG TYPICAL CHARACTERISTICS 1 RqJC = 0.75 50% Duty Cycle R(t) (°C/W) 20% 0.1 10% 5% Junction R1 2% 0.01 Rn C2 Cn Ri (°C/W) Case Ci = ti/Ri 1% C1 0.00001 ti (sec) 0.03276 0.07477 0.12790 0.17518 0.22911 1.0E−4 6.84E−5 0.002 0.03 0.1 0.11135 2.0 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.001 0.000001 R2 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 18. IGBT Transient Thermal Impedance Figure 19. Test Circuit for Switching Characteristics http://onsemi.com 6 10 100 1000 NGTG30N60FWG Figure 20. Definition of Turn On Waveform http://onsemi.com 7 NGTG30N60FWG Figure 21. Definition of Turn Off Waveform http://onsemi.com 8 NGTG30N60FWG PACKAGE DIMENSIONS TO−247 CASE 340L−02 ISSUE F −T− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. C −B− E U N L 4 A −Q− 1 2 0.63 (0.025) 3 M T B M P −Y− K F 2 PL W J D 3 PL 0.25 (0.010) M Y Q MILLIMETERS MIN MAX 20.32 21.08 15.75 16.26 4.70 5.30 1.00 1.40 1.90 2.60 1.65 2.13 5.45 BSC 1.50 2.49 0.40 0.80 19.81 20.83 5.40 6.20 4.32 5.49 --4.50 3.55 3.65 6.15 BSC 2.87 3.12 STYLE 4: PIN 1. 2. 3. 4. H G DIM A B C D E F G H J K L N P Q U W INCHES MIN MAX 0.800 8.30 0.620 0.640 0.185 0.209 0.040 0.055 0.075 0.102 0.065 0.084 0.215 BSC 0.059 0.098 0.016 0.031 0.780 0.820 0.212 0.244 0.170 0.216 --0.177 0.140 0.144 0.242 BSC 0.113 0.123 GATE COLLECTOR EMITTER COLLECTOR S ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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