NTMFS5H400NL Power MOSFET 40 V, 0.80 mW, 330 A, Single N−Channel Features • • • • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb−Free and are RoHS Compliant www.onsemi.com V(BR)DSS MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V ID 330 A Parameter Continuous Drain Current RqJC (Notes 1, 3) TC = 25°C Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State TC = 100°C TC = 25°C Power Dissipation RqJA (Notes 1 & 2) Pulsed Drain Current Steady State PD ID TA = 25°C, tp = 10 ms Source Current (Body Diode) G (4) PD S (1,2,3) W 3.3 IDM 900 A TJ, Tstg −55 to + 150 °C IS 180 A mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Unit Junction−to−Case − Steady State RqJC 0.76 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 38 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. 1 MARKING DIAGRAM D 360 March, 2016 − Rev. 0 N−CHANNEL MOSFET 1.3 EAS © Semiconductor Components Industries, LLC, 2016 D (5) A 46 Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 49 A) Parameter 330 A 1.1 mW @ 4.5 V 29 TA = 100°C Operating Junction and Storage Temperature 0.80 mW @ 10 V 40 V W 160 66 TA = 100°C TA = 25°C ID MAX 210 TC = 100°C TA = 25°C RDS(ON) MAX 1 DFN5 (SO−8FL) CASE 488AA STYLE 1 5H400L A Y W ZZ S S S G D 5H400L AYWZZ D D = Specific Device Code = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION See detailed ordering, marking and shipping information on page 5 of this data sheet. Publication Order Number: NTMFS5H400NL/D NTMFS5H400NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 11.9 VGS = 0 V, VDS = 40 V mV/°C TJ = 25 °C 10 TJ = 125°C 250 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 1.2 2.0 −4.8 VGS = 10 V ID = 50 A 0.60 0.80 VGS = 4.5 V ID = 50 A 0.85 1.1 gFS VDS =15 V, ID = 50 A V mV/°C 350 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS 7700 Reverse Transfer Capacitance CRSS Output Charge QOSS VGS = 0 V, VDD = 20 V 80 Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 20 V; ID = 50 A 54 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 20 V; ID = 50 A 120 Threshold Gate Charge QG(TH) 11 Gate−to−Source Charge QGS 20 Gate−to−Drain Charge QGD Plateau Voltage VGP 2.7 td(ON) 20 VGS = 0 V, f = 1 MHz, VDS = 20 V 1800 pF 87 VGS = 4.5 V, VDS = 20 V; ID = 50 A nC nC 13 V SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 4.5 V, VDS = 20 V, ID = 50 A, RG = 1.0 W tf 140 ns 51 17 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.76 TJ = 125°C 0.6 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 50 A 1.2 V 66 VGS = 0 V, dIS/dt = 100 A/ms, IS = 50 A QRR 35 ns 31 100 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTMFS5H400NL TYPICAL CHARACTERISTICS 300 300 10 V to 4.5 V 275 ID, DRAIN CURRENT (A) 3.2 V 3.4 V 3.0 V 200 150 2.8 V 100 50 2.6 V 2.4 V 0 225 200 175 150 125 TJ = 25°C 100 75 TJ = 125°C 50 TJ = −55°C 0 0.0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 250 25 0.5 1.0 1.5 2.0 2.5 1.5 2 2.5 3 3.5 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 2. Transfer Characteristics 4 3 2 1 0 3 4 5 6 7 8 9 10 VGS, GATE VOLTAGE (V) 4 1.2 TJ = 25°C 1.1 1 0.9 VGS = 4.5 V 0.8 0.7 VGS = 10 V 0.6 0.5 0.4 10 110 60 210 160 260 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.E+6 1.8 VGS = 10 V ID = 50 A IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 1 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ = 25°C ID = 50 A 1.6 0.5 Figure 1. On−Region Characteristics 5 2 0 3.0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 250 1.4 1.2 1 TJ = 150°C 1.E+5 TJ = 125°C 1.E+4 TJ = 85°C 1.E+3 0.8 0.6 −50 −25 0 25 50 75 100 125 150 1.E+2 5 10 15 20 25 30 35 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 40 NTMFS5H400NL TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) 1.E+4 C, CAPACITANCE (pF) CISS COSS 1.E+3 CRSS 1.E+2 VGS = 0 V TJ = 25°C f = 1 MHz 1.E+1 0 5 10 15 20 25 30 35 40 10 VDS = 20 V TJ = 25°C ID = 50 A 9 8 7 6 5 4 QGD QGS 3 2 1 0 0 20 40 60 80 100 120 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source vs. Total Charge 100 1000 IS, SOURCE CURRENT (A) VGS = 0 V tr t, TIME (ns) 100 tf td(off) td(on) 10 VGS = 4.5 V VDD = 20 V ID = 50 A 1 TJ = 150°C TJ = 25°C 10 TJ = −55°C 1 0.1 1 10 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 1000 1 ms 500 ms 100 100 IPEAK (A) IDS (A) 10 ms 10 TJ(initial) = 100°C 10 1 0.1 0.1 TJ(initial) = 25°C RDS(on) Limit Thermal Limit Package Limit 1 10 100 1 100E−3 1E−03 VDS (V) TIME IN AVALANCHE (s) Figure 11. Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 10E−3 NTMFS5H400NL 100 RqJA(t) (°C/W) 50% Duty Cycle 10 20% 10% 5% 1 2% 1% NTMFS5H400NL 650 mm2, 2 oz., Cu Single Layer Pad 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics DEVICE ORDERING INFORMATION Device Marking Package Shipping† NTMFS5H400NLT1G 5H400L DFN5 (Pb−Free) 1500 / Tape & Reel NTMFS5H400NLT3G 5H400L DFN5 (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 NTMFS5H400NL PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE M 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q A1 4 TOP VIEW C SEATING PLANE DETAIL A 0.10 C A RECOMMENDED SOLDERING FOOTPRINT* 0.10 C MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 5.00 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.15 6.30 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 2X SIDE VIEW 0.495 DETAIL A 4.560 2X 0.10 b C A B 0.05 c 1.530 8X e/2 e L 1 3.200 4 4.530 K 1.330 2X E2 PIN 5 (EXPOSED PAD) L1 M 0.905 1 0.965 4X G D2 BOTTOM VIEW 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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