NTMFS5H400NL D

NTMFS5H400NL
Power MOSFET
40 V, 0.80 mW, 330 A, Single N−Channel
Features
•
•
•
•
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
These Devices are Pb−Free and are RoHS Compliant
www.onsemi.com
V(BR)DSS
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
±20
V
ID
330
A
Parameter
Continuous Drain
Current RqJC
(Notes 1, 3)
TC = 25°C
Power Dissipation
RqJC (Note 1)
Continuous Drain
Current RqJA
(Notes 1, 2, 3)
Steady
State
TC = 100°C
TC = 25°C
Power Dissipation
RqJA (Notes 1 & 2)
Pulsed Drain Current
Steady
State
PD
ID
TA = 25°C, tp = 10 ms
Source Current (Body Diode)
G (4)
PD
S (1,2,3)
W
3.3
IDM
900
A
TJ, Tstg
−55 to
+ 150
°C
IS
180
A
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
Junction−to−Case − Steady State
RqJC
0.76
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
38
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
1
MARKING
DIAGRAM
D
360
March, 2016 − Rev. 0
N−CHANNEL MOSFET
1.3
EAS
© Semiconductor Components Industries, LLC, 2016
D (5)
A
46
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 49 A)
Parameter
330 A
1.1 mW @ 4.5 V
29
TA = 100°C
Operating Junction and Storage Temperature
0.80 mW @ 10 V
40 V
W
160
66
TA = 100°C
TA = 25°C
ID MAX
210
TC = 100°C
TA = 25°C
RDS(ON) MAX
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
5H400L
A
Y
W
ZZ
S
S
S
G
D
5H400L
AYWZZ
D
D
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
Publication Order Number:
NTMFS5H400NL/D
NTMFS5H400NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
11.9
VGS = 0 V,
VDS = 40 V
mV/°C
TJ = 25 °C
10
TJ = 125°C
250
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH)
VGS = VDS, ID = 250 mA
100
mA
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance
RDS(on)
1.2
2.0
−4.8
VGS = 10 V
ID = 50 A
0.60
0.80
VGS = 4.5 V
ID = 50 A
0.85
1.1
gFS
VDS =15 V, ID = 50 A
V
mV/°C
350
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
7700
Reverse Transfer Capacitance
CRSS
Output Charge
QOSS
VGS = 0 V, VDD = 20 V
80
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 20 V; ID = 50 A
54
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 20 V; ID = 50 A
120
Threshold Gate Charge
QG(TH)
11
Gate−to−Source Charge
QGS
20
Gate−to−Drain Charge
QGD
Plateau Voltage
VGP
2.7
td(ON)
20
VGS = 0 V, f = 1 MHz, VDS = 20 V
1800
pF
87
VGS = 4.5 V, VDS = 20 V; ID = 50 A
nC
nC
13
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = 4.5 V, VDS = 20 V,
ID = 50 A, RG = 1.0 W
tf
140
ns
51
17
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.76
TJ = 125°C
0.6
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 50 A
1.2
V
66
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 50 A
QRR
35
ns
31
100
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
2
NTMFS5H400NL
TYPICAL CHARACTERISTICS
300
300
10 V to 4.5 V
275
ID, DRAIN CURRENT (A)
3.2 V
3.4 V
3.0 V
200
150
2.8 V
100
50
2.6 V
2.4 V
0
225
200
175
150
125
TJ = 25°C
100
75
TJ = 125°C
50
TJ = −55°C
0
0.0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
250
25
0.5
1.0
1.5
2.0
2.5
1.5
2
2.5
3
3.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
4
3
2
1
0
3
4
5
6
7
8
9
10
VGS, GATE VOLTAGE (V)
4
1.2
TJ = 25°C
1.1
1
0.9
VGS = 4.5 V
0.8
0.7
VGS = 10 V
0.6
0.5
0.4
10
110
60
210
160
260
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.E+6
1.8
VGS = 10 V
ID = 50 A
IDSS, LEAKAGE (nA)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
1
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ = 25°C
ID = 50 A
1.6
0.5
Figure 1. On−Region Characteristics
5
2
0
3.0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
ID, DRAIN CURRENT (A)
250
1.4
1.2
1
TJ = 150°C
1.E+5
TJ = 125°C
1.E+4
TJ = 85°C
1.E+3
0.8
0.6
−50
−25
0
25
50
75
100
125
150
1.E+2
5
10
15
20
25
30
35
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
www.onsemi.com
3
40
NTMFS5H400NL
TYPICAL CHARACTERISTICS
VGS, GATE−TO−SOURCE VOLTAGE (V)
1.E+4
C, CAPACITANCE (pF)
CISS
COSS
1.E+3
CRSS
1.E+2
VGS = 0 V
TJ = 25°C
f = 1 MHz
1.E+1
0
5
10
15
20
25
30
35
40
10
VDS = 20 V
TJ = 25°C
ID = 50 A
9
8
7
6
5
4
QGD
QGS
3
2
1
0
0
20
40
60
80
100
120
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
100
1000
IS, SOURCE CURRENT (A)
VGS = 0 V
tr
t, TIME (ns)
100
tf
td(off)
td(on)
10
VGS = 4.5 V
VDD = 20 V
ID = 50 A
1
TJ = 150°C
TJ = 25°C
10
TJ = −55°C
1
0.1
1
10
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
1000
1 ms
500 ms
100
100
IPEAK (A)
IDS (A)
10 ms
10
TJ(initial) = 100°C
10
1
0.1
0.1
TJ(initial) = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
1
10
100
1
100E−3
1E−03
VDS (V)
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
www.onsemi.com
4
10E−3
NTMFS5H400NL
100
RqJA(t) (°C/W)
50% Duty Cycle
10
20%
10%
5%
1
2%
1%
NTMFS5H400NL 650 mm2, 2 oz., Cu Single Layer Pad
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
Marking
Package
Shipping†
NTMFS5H400NLT1G
5H400L
DFN5
(Pb−Free)
1500 / Tape & Reel
NTMFS5H400NLT3G
5H400L
DFN5
(Pb−Free)
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
NTMFS5H400NL
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE M
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
A
2
B
D1
2X
0.20 C
4X
E1
2
q
E
c
1
2
3
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
A1
4
TOP VIEW
C
SEATING
PLANE
DETAIL A
0.10 C
A
RECOMMENDED
SOLDERING FOOTPRINT*
0.10 C
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.15
5.00
5.30
4.70
4.90
5.10
3.80
4.00
4.20
6.00
6.15
6.30
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.575
0.71
1.20
1.35
1.50
0.51
0.575
0.71
0.125 REF
3.00
3.40
3.80
0_
−−−
12 _
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
2X
SIDE VIEW
0.495
DETAIL A
4.560
2X
0.10
b
C A B
0.05
c
1.530
8X
e/2
e
L
1
3.200
4
4.530
K
1.330
2X
E2
PIN 5
(EXPOSED PAD)
L1
M
0.905
1
0.965
4X
G
D2
BOTTOM VIEW
1.000
4X 0.750
1.270
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
6
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NTMFS5H400NL/D