Ordering number : EN7681B 2SK3703 N-Channel Power MOSFET 60V, 30A, 26mΩ, TO-220F-3SG http://onsemi.com Features • • ON-resistance RDS(on)1=20mΩ (typ.) 4V drive • Input capacitance Ciss=1780pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings Unit VDSS VGSS Gate-to-Source Voltage Drain Current (DC) 60 ID IDP Drain Current (Pulse) PW≤10μs, duty cycle≤1% V ±20 V 30 A 120 A 2.0 W Allowable Power Dissipation PD 25 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 135 mJ 30 A Avalanche Current *2 Tc=25°C Note : *1 VDD=20V, L=200μH, IAV=30A (Fig.1) *2 L≤200μH, Single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7529-001 • Package : TO-220F-3SG • JEITA, JEDEC : SC-67 • Minimum Packing Quantity : 50 pcs./magazine Marking Electrical Connection 2 15.87 6.68 3.3 2.54 A 3.23 15.8 2SK3703-1E 4.7 10.16 3.18 K3703 1 LOT No. 12.98 2.76 1.47 MAX DETAIL-A 0.8 1 2 3 0.5 FRAME 2.54 2.54 Semiconductor Components Industries, LLC, 2013 July, 2013 ( 1.0) EMC 3 (0.84) 1 : Gate 2 : Drain 3 : Source TO-220F-3SG 51612 TKIM TC-00002747/72506QA MSIM TC-00000067/61504 TSIM TA-100813 No.7681-1/7 2SK3703 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | Static Drain-to-Source On-State Resistance RDS(on)2 ID=15A, VGS=4V Output Capacitance Coss Reverse Transfer Capacitance typ Unit max 60 VGS=±16V, VDS=0V VDS=10V, ID=1mA RDS(on)1 Ciss min ID=1mA, VGS=0V VDS=60V, VGS=0V VDS=10V, ID=15A ID=15A, VGS=10V Input Capacitance Ratings Conditions V 1 μA ±10 μA 1.2 2.6 13 22 V S 20 26 mΩ 28 40 mΩ 1780 pF 266 pF Crss 197 pF Turn-ON Delay Time td(on) 16.5 ns Rise Time tr td(off) 110 ns 166 ns Turn-OFF Delay Time Fall Time VDS=20V, f=1MHz See Fig.2 tf Qg Total Gate Charge Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=30V, VGS=10V, ID=30A IS=30A, VGS=0V Fig.1 Avalanche Resistance Test Circuit nC 6.5 nC 11.5 nC 1.0 1.2 V VDD=30V VIN 10V 0V ≥50Ω ID=15A RL=2Ω VIN D 2SK3703 VDD 50Ω ns 40 Fig.2 Switching Time Test Circuit L 10V 0V 144 VOUT PW=10μs D.C.≤1% G 2SK3703 P.G 50Ω S Ordering Information Device 2SK3703-1E Package Shipping memo TO-220F-3SG 50pcs./magazine Pb Free No.7681-2/7 2SK3703 35 30 25 20 15 VGS=3V 25 20 15 5 0 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 Static-Drain-to-Source On-State Resistance, RDS(on) -- mΩ 60 50 40 Tc=75°C 25°C --25°C 20 10 0 2 3 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V 5 Source Current, IS -- A C 25° C ° -25 =C Tc 75° 7 5 3 2 3.5 4.0 4.5 5.0 IT05387 , 15A I D= 30 =4V V GS V 10 S= VG 5A, 1 I D= 20 10 --25 0 25 50 75 100 125 150 IT05389 IS -- VSD VGS=0V 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 1.0 7 5 0.1 3.0 Case Temperature, Tc -- °C 7 10 40 5 3 2 2 2.5 50 0 --50 10 3 2.0 RDS(on) -- Tc IT05388 | yfs | -- ID 100 1.5 60 ID=15A 30 1.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 70 0.5 IT05386 5°C 25° C --25° C 0.4 Tc= 7 0.2 25 °C 5 0 Drain-to-Source Voltage, VDS -- V Static-Drain-to-Source On-State Resistance, RDS(on) -- mΩ 30 10 0 Forward Transfer Admittance, | yfs | -- S 35 Tc= 75 --25 °C °C Drain Current, ID -- A 8V 40 10 2 3 5 7 1.0 2 3 5 7 10 2 Drain Current, ID -- A 3 5 0 Ciss, Coss, Crss -- pF 7 5 tr 3 2 1.2 IT05391 f=1MHz Ciss 2 tf 100 0.9 3 td(off) 2 0.6 Ciss, Coss, Crss -- VDS 5 VDD=30V VGS=10V 3 0.3 Diode Forward Voltage, VSD -- V IT05390 SW Time -- ID 5 Switching Time, SW Time -- ns Tc= --25 °C 75° C 45 4V 40 Drain Current, ID -- A VDS=10V 6V V 10 45 ID -- VGS 50 Tc=25°C 25° C ID -- VDS 50 1000 7 5 Coss Crss 3 2 td(on) 100 10 0.1 7 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 IT05392 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT05393 No.7681-3/7 2SK3703 VGS -- Qg 10 9 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 1000 7 5 3 2 VDS=30V ID=30A 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 Total Gate Charge, Qg -- nC 40 Operatuon in this area is limited by RDS(on). 1.5 1.0 0.5 op Tc=25°C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT16832 PD -- Tc 35 2.0 1 10 0ms 0m era s tio n s Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 1.0 7 5 3 2 0μ s 1m DC 10 7 5 3 2 10 μs 10 ID=30A IT05394 0 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT05397 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT05396 EAS -- Ta 120 Avalanche Energy derating factor -- % IDP=120A(PW≤10μs) 100 7 5 3 2 0.1 0.1 PD -- Ta 2.5 ASO 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No.7681-4/7 2SK3703 Magazine Specification 2SK3703-1E No.7681-5/7 2SK3703 Outline Drawing 2SK3703-1E Mass (g) Unit 1.8 mm * For reference No.7681-6/7 2SK3703 Note on usage : Since the 2SK3703 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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