2SK4198FS Ordering number : ENA1370C SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4198FS General-Purpose Switching Device Applications Features • • ON-resistance RDS(on)=1.8Ω (typ.) 10V drive • • Input capacitance Ciss=360pF (typ.) Repetitive avalanche guarantee Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage IDc *1 Drain Current (DC) Drain Current (Pulse) Unit 600 Limited only by maximum temperature Tch=150°C IDpack *2 Tc=25°C (SANYO’s ideal heat dissipation condition)*3 IDP PW≤10μs, duty cycle≤1% V ±30 V 5 A 4 A 18 A 2.0 W Allowable Power Dissipation PD 30 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *4 55 mJ Avalanche Current *5 EAS IAV Avalanche Energy (Repetition) EAR Tc=25°C (SANYO’s ideal heat dissipation condition)*3 4.5 Limited only by maximum temperature Tch=150°C A 3 mJ Note : *1 Shows chip capability. *2 Package limited. *3 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=50V, L=5mH, IAV=4.5A (Fig.1) *5 L≤5mH, Single pulse Package Dimensions Product & Package Information unit : mm (typ) 7528-001 • Package : TO-220F-3FS • JEITA, JEDEC : SC-67 • Minimum Packing Quantity : 50 pcs./magazine 4.7 10.16 3.18 2.54 2SK4198FS Electrical Connection 6.68 3.3 Marking 3.23 K4198 2.76 LOT No. 1 12.98 15.8 15.87 2 1.47 MAX 0.8 3 1 2.54 2 3 0.5 2.54 1 : Gate 2 : Drain 3 : Source SANYO : TO-220F-3FS http://www.sanyosemi.com/en/network/ O1712 TKIM TC-00002825/70710 TKIM TC-00002401/31010 TKIM TC-00002278/N2608QB MSIM TC-00001732 No. A1370-1/7 2SK4198FS Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS IDSS ID=10mA, VGS=0V VDS=480V, VGS=0V VGS=±30V, VDS=0V Forward Transfer Admittance IGSS VGS(off) | yfs | Static Drain-to-Source On-State Resistance RDS(on) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Ratings Conditions min typ Unit max 600 VDS=10V, ID=1mA 3 VDS=10V, ID=2.5A ID=2.5A, VGS=10V 1.2 V 100 μA ±100 nA 5 2.4 V S 1.8 2.34 Ω 360 pF 69 pF 15 pF td(on) 13 ns Rise Time tr 28 ns Turn-OFF Delay Time td(off) Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=30V, f=1MHz See Fig.2 39 ns 15 ns 14.3 nC 3.0 nC VDS=200V, VGS=10V, ID=5A 8.2 IS=5A, VGS=0V Fig.1 Unclamped Inductive Switching Test Circuit V VDD=200V L ID=2.5A RL=78Ω ≥50Ω RG VGS=10V 2SK4198FS VOUT D G VDD 50Ω 1.2 Fig.2 Switching Time Test Circuit PW≤10μs D.C.≤1% 10V 0V nC 0.9 P.G 50Ω S 2SK4198FS Ordering Information Device 2SK4198FS Package Shipping memo TO-220F-3FS 50pcs./magazine Pb Free No. A1370-2/7 2SK4198FS ID -- VDS 12 VDS=20V 12 10V 15V 8 Drain Current, ID -- A Drain Current, ID -- A 10 8V 6 4 2 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 25°C 8 75°C 6 4 0 30 0 2 4 6 8 10 12 14 16 18 Gate-to-Source Voltage, VGS -- V IT13521 RDS(on) -- VGS 6 C Tc= --25° 10 2 6V VGS=5V 0 ID -- VGS 14 Tc=25°C RDS(on) -- Tc 6 20 IT13522 3 Tc=75°C 2 25°C --25°C 0 5 6 7 8 9 10 11 12 13 14 Gate-to-Source Voltage, VGS -- V °C 25 2 5°C --2 Tc= °C 75 1.0 7 5 3 2 3 5 7 1.0 2 3 5 SW Time -- ID 5 0 25 50 75 100 125 150 IT13524 IS -- VSD VGS=0V 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 0.01 0.2 7 10 IT13525 0.4 0.6 0.8 1.0 1.2 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS 2 VDD=200V VGS=10V 3 1.4 IT13526 f=1MHz 1000 7 2 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns --25 3 2 Drain Current, ID -- A 100 7 td (off) 5 tr 3 2 tf 2 3 5 7 1.0 2 Drain Current, ID -- A 5 Ciss 3 2 100 Coss 7 5 3 Crss 2 td(on) 10 7 0.1 1 3 2 2 0.1 0.1 VG Case Temperature, Tc -- °C Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 3 S= 2 0 --50 15 VDS=20V 5 =2 , ID V 0 1 IT13523 | yfs | -- ID 7 .5A 3 Tc=7 5°C 1 4 --25° C 4 5 25°C 5 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω ID=2.5A 3 5 7 10 IT13527 10 7 0 10 20 30 40 Drain-to-Source Voltage, VDS -- V 50 IT13528 No. A1370-3/7 2SK4198FS VGS -- Qg 10 3 2 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 Total Gate Charge, Qg -- nC 0.5 60 80 100 120 140 Ambient Temperature, Ta -- °C Avalanche Energy derating factor -- % 160 IT13531 EAS -- Ta 120 1 10 0μs 0μ 1 s 10 ms m s 1 DC 00m s op er ati on IDc=5A IDpack=4A 1.0 7 5 3 2 Operation in this area is limited by RDS(on). 0.1 7 5 3 2 Tc=25°C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 3 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 1.0 40 PW≤10μs PD -- Tc 35 1.5 20 10 7 5 3 2 0.01 0.1 16 2.0 0 IDP=18A IT13529 PD -- Ta 2.5 0 ASO 5 VDS=200V ID=5A 5 71000 IT14229 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT13532 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A1370-4/7 2SK4198FS Magazine Specification 2SK4198FS No. A1370-5/7 2SK4198FS Outline Drawing 2SK4198FS Mass (g) Unit 1.8 mm * For reference No. A1370-6/7 2SK4198FS Note on usage : Since the 2SK4198FS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of October, 2012. Specifications and information herein are subject to change without notice. PS No. A1370-7/7