2SK3703 Ordering number : EN7681A SANYO Semiconductors DATA SHEET 2SK3703 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 Gate-to-Source Voltage VGSS ±20 V ID 30 A Drain Current (DC) Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% V 120 A 2.0 W Allowable Power Dissipation PD 25 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS 135 mJ Avalanche Current *2 IAV 30 A Tc=25°C Note : *1 VDD=20V, L=200µH, IAV=30A *2 L≤200µH, Single pulse Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Marking : K3703 Symbol V(BR)DSS Conditions Ratings min typ ID=1mA, VGS=0V VDS=60V, VGS=0V VGS= ±16V, VDS=0V 60 VGS(off) yfs VDS=10V, ID=1mA VDS=10V, ID=15A 1.2 RDS(on)1 RDS(on)2 ID=15A, VGS=10V ID=15A, VGS=4V IDSS IGSS Unit max V ±10 µA µA 2.6 V 20 26 mΩ 28 40 mΩ 1 13 22 S Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 72506QA MS IM TC-00000067 / 61504 TS IM TA-100813 No.7681-1/5 2SK3703 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss pF Coss VDS=20V, f=1MHz VDS=20V, f=1MHz 1780 Output Capacitance 266 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 197 pF Turn-ON Delay Time td(on) See specified Test Circuit. 16.5 ns Rise Time tr td(off) See specified Test Circuit. 110 ns See specified Test Circuit. 166 ns tf See specified Test Circuit. 144 ns Turn-OFF Delay Time Fall Time Total Gate Charge Qg VDS=30V, VGS=10V, ID=30A 40 nC Gate-to-Source Charge Qgs nC Qgd VDS=30V, VGS=10V, ID=30A VDS=30V, VGS=10V, ID=30A 6.5 Gate-to-Drain “Miller” Charge 11.5 Diode Forward Voltage VSD IS=30A, VGS=0V Package Dimensions nC 1.0 1.2 V Switching Time Test Circuit unit : mm (typ) 7508-003 VDD=30V VIN 4.5 10.0 ID=15A RL=2Ω VIN 7.2 D VOUT PW=10µs D.C.≤1% 16.0 3.5 10V 0V 2.8 3.2 18.1 G 2SK3703 P.G 14.0 5.6 1.6 1.2 0.75 2.4 1 2 3 2.55 2.55 50Ω S 0.7 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML Avalanche Resistance Test Circuit L ≥50Ω 2SK3703 10V 0V 50Ω VDD No.7681-2/5 2SK3703 Tc=25°C 25 20 15 VGS=3V 20 15 10 5 5 2.0 2.5 0 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 Static-Drain-to-Source On-State Resistance, RDS(on) -- mΩ 50 40 Tc=75°C 25°C 20 --25°C 10 3 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V 10 5 Source Current, IS -- A C 25° 5°C 10 7 = Tc 5 --2 C 75° 3 2 5.0 IT05387 VG A, 15 I D= 30 V 10 S= A, VG 15 I D= 20 10 --25 0 25 50 75 100 125 150 IT05389 IS -- VSD VGS=0V 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 1.0 7 5 0.1 4.5 Case Temperature, Tc -- °C 7 2 4.0 4V S= 40 5 3 2 3 3.5 50 IT05388 yfs -- ID 100 3.0 RDS(on) -- Tc 0 --50 0 2 1.5 60 ID=15A 60 30 1.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 70 0.5 IT05386 5°C 25° C --25° C 0.4 Tc= 7 0.2 Drain-to-Source Voltage, VDS -- V Static-Drain-to-Source On-State Resistance, RDS(on) -- mΩ 25 10 0 Forward Transfer Admittance, yfs -- S 30 Tc= 75 --25 °C °C 30 35 25 °C Drain Current, ID -- A 8V 40 35 0 2 3 5 7 1.0 2 3 5 7 10 2 Drain Current, ID -- A 3 5 0 Ciss, Coss, Crss -- pF 7 5 tr 3 2 1.2 IT05391 f=1MHz Ciss 2 tf 100 0.9 3 td(off) 2 0.6 Ciss, Coss, Crss -- VDS 5 VDD=30V VGS=10V 3 0.3 Diode Forward Voltage, VSD -- V IT05390 SW Time -- ID 5 Switching Time, SW Time -- ns Tc= --25 °C 75 ° C 45 4V 40 Drain Current, ID -- A VDS=10V 6V 10 V 45 ID -- VGS 50 25 ° C ID -- VDS 50 1000 7 5 Coss Crss 3 2 td(on) 100 10 0.1 7 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 IT05392 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT05393 No.7681-3/5 2SK3703 VGS -- Qg 10 8 7 6 5 4 3 5 10 15 20 25 30 35 2 PD -- Ta 3 5 7 1.0 Allowable Power Dissipation, PD -- W 1.0 0.5 0 s ms 0m s era tio n op 2 3 5 7 10 2 3 5 7 IT05395 PD -- Tc 35 1.5 1m 10 Drain-to-Source Voltage, VDS -- V IT05394 2.0 0µ s Tc=25°C Single pulse 0.1 0.1 40 10 Operatuon in this area is limited by RDS(on). 3 2 3 2 2.5 Allowable Power Dissipation, PD -- W DC 10 7 5 1 Total Gate Charge, Qg -- nC 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT05397 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT05396 EAS -- Ta 120 Avalanche Energy derating factor -- % ID=30A 3 2 2 0 0µ s 10 1.0 7 5 0 <10µs < 1 IDP=120A 100 7 5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 ASO 3 2 VDS=30V ID=30A 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No.7681-4/5 2SK3703 Note on usage : Since the 2SK3703 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2006. Specifications and information herein are subject to change without notice. PS No.7681-5/5