SANYO 2SK4066_12

2SK4066
Ordering number : ENA0225C
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
2SK4066
General-Purpose Switching Device
Applications
Features
•
•
ON-resistance RDS(on)1=3.6mΩ(typ.)
4V drive
•
Input capacitance Ciss=12500pF (typ.)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
Unit
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
60
ID
IDP
Drain Current (Pulse)
Allowable Power Dissipation
PW≤10μs, duty cycle≤1%
PD
V
±20
V
100
A
400
A
1.65
W
90
W
Tc=25°C
Continued on next page.
Package Dimensions unit : mm (typ)
Package Dimensions unit : mm (typ)
7537-001
7535-001
2SK4066-1E
2SK4066-DL-1E
1.4
3.0
3.0
1.75
8.0
1.3
5.3
0.9
1.2
1.75
4
0.9
7.9
1.2
9.2
5.3
4.5
10.0
7.9
8.0
1.3
9.2
13.4
4.5
10.0
0.254
1
2 3
0.8
13.08
1.27
1.27
0.8
0.5
2.54
2.54
0.5
2.54
1 : Gate
2 : Drain
3 : Source
4 : Drain
2.4
1 : Gate
2 : Drain
3 : Source
0 to 0.25
2.4
1 2 3
1.35
1.47
2.54
SANYO : TO-262-3L
SANYO : TO-263-2L
Product & Package Information
• Package : TO-262-3L
• JEITA, JEDEC : TO-262
• Minimum Packing Quantity : 50pcs./magazine
Marking
• Package : TO-263-2L
• JEITA, JEDEC : SC-83, TO-263
• Minimum Packing Quantity : 800pcs./reel
Packing Type : DL
Electrical Connection
2, 4
K4066
1
LOT No.
DL
3
http://semicon.sanyo.com/en/network
60612 TKIM/12512 TKIM TC-00002698/71206/41006 MSIM TB-00002121/12506QA MSIM TB-00002052 No. A0225-1/9
2SK4066
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
Channel Temperature
Tch
150
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
IAV
850
mJ
70
A
Avalanche Current *2
°C
Note : *1 VDD=30V, L=200μH, IAV=70A (Fig.1)
*2 L≤200μH, single pulse
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Ratings
Conditions
min
typ
Unit
max
V(BR)DSS
IDSS
IGSS
ID=1mA, VGS=0V
VGS(off)
| yfs |
VDS=10V, ID=1mA
VDS=10V, ID=50A
RDS(on)1
ID=50A, VGS=10V
3.6
4.7
mΩ
RDS(on)2
ID=50A, VGS=4V
4.7
6.6
mΩ
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
60
V
VDS=60V, VGS=0V
VGS=±16V, VDS=0V
1.2
1
μA
±10
μA
2.6
51
85
V
S
12500
pF
1200
pF
Crss
950
pF
Turn-ON Delay Time
td(on)
80
ns
Rise Time
tr
630
ns
Turn-OFF Delay Time
td(off)
860
ns
Fall Time
Total Gate Charge
tf
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=20V, f=1MHz
See Fig.2
VDS=30V, VGS=10V, ID=100A
ns
220
nC
31
nC
55
IS=100A, VGS=0V
Fig.1 Avalanche Resistance Test Circuit
10V
0V
1.2
V
VDD=30V
VIN
≥50Ω
ID=50A
RL=0.6Ω
VIN
2SK4066
VDD
50Ω
nC
0.9
Fig.2 Switching Time Test Circuit
L
10V
0V
750
D
PW=10μs
D.C.≤1%
VOUT
G
2SK4066
P.G
50Ω
S
Ordering Information
Package
Shipping
2SK4066-1E
Device
TO-262-3L
50pcs./magazine
2SK4066-DL-1E
TO-263-2L
800pcs./reel
memo
Pb Free
No. A0225-2/9
2SK4066
ID -- VDS
200
4V
6V
8V
80
VGS=3V
60
60
40
20
20
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
RDS(on) -- VGS
1.8
12
11
10
9
8
7
Tc=75°C
5
25°C
--25°C
4
3
2
0
1
2
3
4
5
6
7
8
9
Gate-to-Source Voltage, VGS -- V
2
3
°C
-25
=
°C
Tc
75
2
10
7
5
3
1.0
7
0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
Drain Current, ID -- A
5 7 100
2 3
IT10471
50A
I D=
,
V
A
=4
=50
V GS
V, I D
0
1
=
V GS
6
5
4
3
2
1
0
25
2
tr
5
0.1
2
3
5 7 1.0
2
3
150
IT10470
10
7
5
3
2
1.0
7
5
3
2
0
0.3
0.6
0.9
1.2
1.5
IT10472
Ciss, Coss, Crss -- VDS
f=1MHz
10k
7
5
3
2
Coss
Crss
1k
td(on)
7
125
2
Ciss, Coss, Crss -- pF
3
100
100
Ciss
tf
5
75
VGS=0V
100
7
5
3
2
td(off)
1000
7
50
IS -- VSD
3
VDD=30V
VGS=10V
2
--25
Diode Forward Voltage, VSD -- V
SW Time -- ID
3
7
0.1
7
5
3
2
0.01
2
4.0
IT10468
8
3
2
°C
25
3.5
Case Temperature, Tc -- °C
VDS=10V
100
7
5
3.0
9
IT10469
| yfs | -- ID
2.5
RDS(on) -- Tc
0
--50
10
Source Current, IS -- A
3
2.0
Gate-to-Source Voltage, VGS -- V
10
13
6
1.5
IT10467
ID=50A
14
1
0
0
1.0
2.0
Tc=7
5°C
25°C
--25°C
0
15
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
80
40
Drain-to-Source Voltage, VDS -- V
Forward Transfer Admittance, | yfs | -- S
100
25° --2
C 5°C
100
120
°C
120
140
Tc
=7
5
140
0
Switching Time, SW Time -- ns
Drain Current, ID -- A
160
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Drain Current, ID -- A
160
VDS=10V
180
10V
180
ID -- VGS
200
Tc=25°C
7
5 7 10
Drain Current, ID -- A
2
3
5 7 100
IT10473
5
0
5
10
15
20
25
Drain-to-Source Voltage, VDS -- V
30
IT10474
No. A0225-3/9
2SK4066
VGS -- Qg
10
8
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
9
7
6
5
4
3
2
1
0
0
50
100
150
200
10
7
5
3
2
PD -- Ta
1.5
1.0
0.5
0μ
s
10
μs
s
Operation in
this area is
limited by RDS(on).
1.0
7
5
3
2
Tc=25°C
2
3
5 7 10
2
3
5 7 100
IT10960
PD -- Tc
100
1.65
10
1m
Drain-to-Source Voltage, VDS -- V
Allowable Power Dissipation, PD -- W
Allowable Power Dissipation, PD -- W
1 10
DC 00m ms
op s
era
tio
n
ID=100A
100
7
5
3
2
IT10475
0
90
80
70
60
50
40
30
20
10
0
0
20
40
60
80
100
120
140
Ambient Temperature, Ta -- °C
160
IT10482
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT10483
EAS -- Ta
120
Avalanche Energy derating factor -- %
≤10μs
IDP=400A
0.1 Single pulse
2 3
5 7 1.0
0.1
250
Total Gate Charge, Qg -- nC
2.0
ASO
1000
7
5
3
2
VDS=30V
ID=100A
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT10478
No. A0225-4/9
2SK4066
Taping Specification
2SK4066-DL-1E
No. A0225-5/9
2SK4066
Outline Drawing
2SK4066-DL-1E
Land Pattern Example
Mass (g) Unit
1.5
mm
* For reference
Unit: mm
No. A0225-6/9
2SK4066
Magazine Specification
2SK4066-1E
No. A0225-7/9
2SK4066
Outline Drawing
2SK4066-1E
Mass (g) Unit
1.6
mm
* For reference
No. A0225-8/9
2SK4066
Note on usage : Since the 2SK4066 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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"standard application", intended for the use as general electronics equipment. The products mentioned herein
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the performance, characteristics, and functions of the described products in the independent state, and are
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Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
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This catalog provides information as of June, 2012. Specifications and information herein are subject
to change without notice.
PS No. A0225-9/9