2SK4066 Ordering number : ENA0225C SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4066 General-Purpose Switching Device Applications Features • • ON-resistance RDS(on)1=3.6mΩ(typ.) 4V drive • Input capacitance Ciss=12500pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings Unit VDSS VGSS Gate-to-Source Voltage Drain Current (DC) 60 ID IDP Drain Current (Pulse) Allowable Power Dissipation PW≤10μs, duty cycle≤1% PD V ±20 V 100 A 400 A 1.65 W 90 W Tc=25°C Continued on next page. Package Dimensions unit : mm (typ) Package Dimensions unit : mm (typ) 7537-001 7535-001 2SK4066-1E 2SK4066-DL-1E 1.4 3.0 3.0 1.75 8.0 1.3 5.3 0.9 1.2 1.75 4 0.9 7.9 1.2 9.2 5.3 4.5 10.0 7.9 8.0 1.3 9.2 13.4 4.5 10.0 0.254 1 2 3 0.8 13.08 1.27 1.27 0.8 0.5 2.54 2.54 0.5 2.54 1 : Gate 2 : Drain 3 : Source 4 : Drain 2.4 1 : Gate 2 : Drain 3 : Source 0 to 0.25 2.4 1 2 3 1.35 1.47 2.54 SANYO : TO-262-3L SANYO : TO-263-2L Product & Package Information • Package : TO-262-3L • JEITA, JEDEC : TO-262 • Minimum Packing Quantity : 50pcs./magazine Marking • Package : TO-263-2L • JEITA, JEDEC : SC-83, TO-263 • Minimum Packing Quantity : 800pcs./reel Packing Type : DL Electrical Connection 2, 4 K4066 1 LOT No. DL 3 http://semicon.sanyo.com/en/network 60612 TKIM/12512 TKIM TC-00002698/71206/41006 MSIM TB-00002121/12506QA MSIM TB-00002052 No. A0225-1/9 2SK4066 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Channel Temperature Tch 150 Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 850 mJ 70 A Avalanche Current *2 °C Note : *1 VDD=30V, L=200μH, IAV=70A (Fig.1) *2 L≤200μH, single pulse Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Ratings Conditions min typ Unit max V(BR)DSS IDSS IGSS ID=1mA, VGS=0V VGS(off) | yfs | VDS=10V, ID=1mA VDS=10V, ID=50A RDS(on)1 ID=50A, VGS=10V 3.6 4.7 mΩ RDS(on)2 ID=50A, VGS=4V 4.7 6.6 mΩ Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance 60 V VDS=60V, VGS=0V VGS=±16V, VDS=0V 1.2 1 μA ±10 μA 2.6 51 85 V S 12500 pF 1200 pF Crss 950 pF Turn-ON Delay Time td(on) 80 ns Rise Time tr 630 ns Turn-OFF Delay Time td(off) 860 ns Fall Time Total Gate Charge tf Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=20V, f=1MHz See Fig.2 VDS=30V, VGS=10V, ID=100A ns 220 nC 31 nC 55 IS=100A, VGS=0V Fig.1 Avalanche Resistance Test Circuit 10V 0V 1.2 V VDD=30V VIN ≥50Ω ID=50A RL=0.6Ω VIN 2SK4066 VDD 50Ω nC 0.9 Fig.2 Switching Time Test Circuit L 10V 0V 750 D PW=10μs D.C.≤1% VOUT G 2SK4066 P.G 50Ω S Ordering Information Package Shipping 2SK4066-1E Device TO-262-3L 50pcs./magazine 2SK4066-DL-1E TO-263-2L 800pcs./reel memo Pb Free No. A0225-2/9 2SK4066 ID -- VDS 200 4V 6V 8V 80 VGS=3V 60 60 40 20 20 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 RDS(on) -- VGS 1.8 12 11 10 9 8 7 Tc=75°C 5 25°C --25°C 4 3 2 0 1 2 3 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V 2 3 °C -25 = °C Tc 75 2 10 7 5 3 1.0 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 5 7 100 2 3 IT10471 50A I D= , V A =4 =50 V GS V, I D 0 1 = V GS 6 5 4 3 2 1 0 25 2 tr 5 0.1 2 3 5 7 1.0 2 3 150 IT10470 10 7 5 3 2 1.0 7 5 3 2 0 0.3 0.6 0.9 1.2 1.5 IT10472 Ciss, Coss, Crss -- VDS f=1MHz 10k 7 5 3 2 Coss Crss 1k td(on) 7 125 2 Ciss, Coss, Crss -- pF 3 100 100 Ciss tf 5 75 VGS=0V 100 7 5 3 2 td(off) 1000 7 50 IS -- VSD 3 VDD=30V VGS=10V 2 --25 Diode Forward Voltage, VSD -- V SW Time -- ID 3 7 0.1 7 5 3 2 0.01 2 4.0 IT10468 8 3 2 °C 25 3.5 Case Temperature, Tc -- °C VDS=10V 100 7 5 3.0 9 IT10469 | yfs | -- ID 2.5 RDS(on) -- Tc 0 --50 10 Source Current, IS -- A 3 2.0 Gate-to-Source Voltage, VGS -- V 10 13 6 1.5 IT10467 ID=50A 14 1 0 0 1.0 2.0 Tc=7 5°C 25°C --25°C 0 15 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 80 40 Drain-to-Source Voltage, VDS -- V Forward Transfer Admittance, | yfs | -- S 100 25° --2 C 5°C 100 120 °C 120 140 Tc =7 5 140 0 Switching Time, SW Time -- ns Drain Current, ID -- A 160 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Drain Current, ID -- A 160 VDS=10V 180 10V 180 ID -- VGS 200 Tc=25°C 7 5 7 10 Drain Current, ID -- A 2 3 5 7 100 IT10473 5 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT10474 No. A0225-3/9 2SK4066 VGS -- Qg 10 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 7 6 5 4 3 2 1 0 0 50 100 150 200 10 7 5 3 2 PD -- Ta 1.5 1.0 0.5 0μ s 10 μs s Operation in this area is limited by RDS(on). 1.0 7 5 3 2 Tc=25°C 2 3 5 7 10 2 3 5 7 100 IT10960 PD -- Tc 100 1.65 10 1m Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 1 10 DC 00m ms op s era tio n ID=100A 100 7 5 3 2 IT10475 0 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT10482 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT10483 EAS -- Ta 120 Avalanche Energy derating factor -- % ≤10μs IDP=400A 0.1 Single pulse 2 3 5 7 1.0 0.1 250 Total Gate Charge, Qg -- nC 2.0 ASO 1000 7 5 3 2 VDS=30V ID=100A 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A0225-4/9 2SK4066 Taping Specification 2SK4066-DL-1E No. A0225-5/9 2SK4066 Outline Drawing 2SK4066-DL-1E Land Pattern Example Mass (g) Unit 1.5 mm * For reference Unit: mm No. A0225-6/9 2SK4066 Magazine Specification 2SK4066-1E No. A0225-7/9 2SK4066 Outline Drawing 2SK4066-1E Mass (g) Unit 1.6 mm * For reference No. A0225-8/9 2SK4066 Note on usage : Since the 2SK4066 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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