Ordering number : ENA0523B 2SK4094 N-Channel Power MOSFET http://onsemi.com 60V, 100A, 5mΩ, TO-220-3L Features • • • ON-resistance RDS(on)1=3.8mΩ (typ.) Input capacitance Ciss=12500pF (typ.) 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Unit 60 PW≤10μs, duty cycle≤1% V ±20 V 100 A 400 A 1.75 W Allowable Power Dissipation PD 90 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 850 mJ 70 A Avalanche Current *2 Tc=25°C Note : *1 VDD=30V, L=200μH, IAV=70A (Fig.1) *2 L≤200μH, single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7536-001 • Package : TO-220-3L • JEITA, JEDEC : SC-46, TO-220AB • Minimum Packing Quantity : 50 pcs./magazine 4.5 3.6 2SK4094-1E 2.8 1.3 (1.7) 10.0 1.3 Marking Electrical Connection 2 8.9 MAX 13.3 15.7 (0.6) 9.2 K4094 LOT No. 1.27 0.8 13.08 3.0 1.52 1 0.5 3 2.4 1 2 3 2.54 1 : Gate 2 : Drain 3 : Source 2.54 TO-220-3L Semiconductor Components Industries, LLC, 2013 July, 2013 60612 TKIM/12512 TKIM TC-00002699/N0806QA SYIM TC-00000295 No. A0523-1/7 2SK4094 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS min typ Unit max 60 ID=1mA, VGS=0V VDS=60V, VGS=0V V 1 μA ±10 μA Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=16V, VDS=0V VDS=10V, ID=1mA 1.2 Forward Transfer Admittance | yfs | VDS=10V, ID=50A 45 RDS(on)1 ID=50A, VGS=10V 3.8 5.0 mΩ RDS(on)2 ID=50A, VGS=4V 4.9 7.0 mΩ Static Drain-to-Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss 2.6 75 VDS=20V, f=1MHz V S 12500 pF 1200 pF Reverse Transfer Capacitance Crss 950 pF Turn-ON Delay Time td(on) 80 ns Rise Time tr 630 ns Turn-OFF Delay Time td(off) 860 ns Fall Time tf 750 ns Total Gate Charge Qg 220 nC Gate-to-Source Charge Qgs 30 nC Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD See Fig.2 VDS=30V, VGS=10V, ID=100A 55 IS=100A, VGS=0V Fig.1 Avalanche Resistance Test Circuit 10V 0V V VDD=30V VIN ≥50Ω ID=50A RL=0.6Ω VIN 2SK4094 VDD 50Ω 1.2 Fig.2 Switching Time Test Circuit L 10V 0V nC 1.0 D PW=10μs D.C.≤1% VOUT G 2SK4094 P.G 50Ω S Ordering Information Device 2SK4094-1E Package Shipping memo TO-220-3L 50pcs./magazine Pb Free No. A0523-2/7 2SK4094 6V 60 60 40 40 20 20 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 RDS(on) -- VGS 1.8 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 12 10 25°C Tc=75°C 4 --25°C 2 0 1 2 3 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V 2 | yfs | -- ID 2 = Tc 10 7 5 5°C --2 C 75° 3 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 7 5 7 100 IT11434 5 4 1 --25 0 25 2 tr 5 0.1 2 3 5 7 1.0 2 3 75 100 125 150 IT11559 IS -- VSD 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IT11435 Ciss, Coss, Crss -- VDS f=1MHz 2 10k 7 5 3 2 Coss Crss 1k td(on) 7 50 VGS=0V Single pulse 3 Ciss, Coss, Crss -- pF 3 100 C 2 Ciss tf 5 4.5 IT11431 3 td(off) 1000 7 4.0 Diode Forward Voltage, VSD -- V VDD=30V VGS=10V 2 3.5 50A I D= , V =4 A =50 V GS V, I D 0 1 = V GS 6 0.1 7 5 3 2 0.01 SW Time -- ID 3 3.0 Case Temperature, Tc -- °C 2 1.0 7 0.1 2.5 8 3 2 °C 25 3 2.0 9 IT11558 VDS=10V Single pulse 100 7 5 1.5 RDS(on) -- Tc 0 --50 10 Source Current, IS -- A 3 1.0 Gate-to-Source Voltage, VGS -- V Single pulse 14 6 0.5 10 16 8 0 IT11430 ID=50A Single pulse 18 0 2.0 --25°C 0 20 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 80 75°C VGS=3V 100 Tc=7 5°C 25 ° C 80 120 25 ° C 100 140 Tc= --25 °C 120 Drain-to-Source Voltage, VDS -- V Forward Transfer Admittance, | yfs | -- S Drain Current, ID -- A 140 0 Switching Time, SW Time -- ns 180 160 10 V Drain Current, ID -- A 160 VDS=10V Single pulse Tc=75° C --25° C 4V 8V 180 ID -- VGS 200 Tc=25°C Single pulse 25° ID -- VDS 200 7 5 7 10 Drain Current, ID -- A 2 3 5 7 100 IT10473 5 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT10474 No. A0523-3/7 2SK4094 VGS -- Qg 10 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 7 6 5 4 3 2 1 0 0 50 100 150 200 PD -- Ta 0.5 40 60 80 100 120 140 Ambient Temperature, Ta -- °C Avalanche Energy derating factor -- % IT11548 EAS -- Ta 120 160 ≤10μs 1 0μ s 10 0μ s Operation in this area is limited by RDS(on). 1.0 7 5 3 2 Tc=25°C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 1.0 20 10 7 5 3 2 PD -- Tc 100 1.5 0 1m s 1 10 DC 00m ms s op era tio n ID=100A 100 7 5 3 2 IT10475 1.75 0 IDP=400A 0.1 0.1 250 Total Gate Charge, Qg -- nC 2.0 ASO 1000 7 5 3 2 VDS=30V ID=100A 3 5 7 100 IT10960 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT10483 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT11439 No. A0523-4/7 2SK4094 Magazine Specification 2SK4094-1E No. A0523-5/7 2SK4094 Outline Drawing 2SK4094-1E Mass (g) Unit 2.0 mm * For reference No. A0523-6/7 2SK4094 Note on usage : Since the 2SK4094 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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