Ordering number : ENA1604A ATP108 P-Channel Power MOSFET http://onsemi.com –40V, –70A, 10.4mΩ, Single ATPAK Features • • • Low ON-resistance Slim package Halogen free compliance • • • Large current 4.5V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit --40 V ±20 V --70 A Allowable Power Dissipation ID IDP PD Channel Temperature Tch 150 Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 95 mJ --35 A Drain Current (PW≤10μs) Avalanche Current *2 PW≤10μs, duty cycle≤1% Tc=25°C --210 A 60 W °C Note : *1 VDD=--15V, L=100μH, IAV=--35A *2 L≤100μH, Single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7057-001 • Package : ATPAK • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ATP108-TL-H 1.5 6.5 Marking ATP108 0.4 0.4 0.5 4 Packing Type: TL 4.6 2.6 6.05 4.6 9.5 7.3 LOT No. TL Electrical Connection 3 0.8 0.4 2.3 0.1 2.3 0.6 0.55 0.7 0.5 1 1.7 4,2 2 Semiconductor Components Industries, LLC, 2013 July, 2013 1 : Gate 2 : Drain 3 : Source 4 : Drain ATPAK 1 3 61312 TKIM/N1109PA TKIM TC-00002147 No. A1604-1/7 ATP108 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions ID=--1mA, VGS=0V VDS=--40V, VGS=0V Ratings min typ Unit max --40 V Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±16V, VDS=0V VDS=--10V, ID=--1mA Forward Transfer Admittance | yfs | VDS=--10V, ID=--35A RDS(on)1 ID=--35A, VGS=--10V 8 10.4 mΩ RDS(on)2 ID=--18A, VGS=--4.5V 11.5 16.5 mΩ Static Drain-to-Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance --1.5 --1 μA ±10 μA --2.6 65 V S 3850 pF 560 pF Crss 390 pF Turn-ON Delay Time td(on) 19 ns Rise Time tr 340 ns Turn-OFF Delay Time td(off) 340 ns Fall Time tf 290 ns Total Gate Charge Qg 79.5 nC Gate-to-Source Charge Qgs 20 nC Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--20V, f=1MHz See specified Test Circuit. VDS=--20V, VGS=--10V, ID=--70A 15 IS=--70A, VGS=0V --1.05 nC --1.5 V Switching Time Test Circuit 0V --10V VDD= --20V VIN ID= --35A RL=0.57Ω VIN D PW=10μs D.C.≤1% VOUT G ATP108 P.G 50Ω S Ordering Information Device ATP108-TL-H Package Shipping memo ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1604-2/7 ATP108 --40 --20 --40 --30 --1.0 --1.2 --1.4 --1.6 --1.8 Tc=25°C Single pulse ID= --18A 20 18 --35A 16 14 12 10 8 6 4 --2 --4 --6 --8 --10 --12 --14 Gate-to-Source Voltage, VGS -- V °C 25 3 C 5° 2 = Tc 10 --2 7 75 °C 5 3 2 1.0 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain Current, ID -- A 5 7 --100 VDD= --20V VGS= --10V 1000 tf 2 100 tr 7 5 3 td(on) 2 25° C Tc= --3.5 --4.0 --4.5 IT15181 8A 15 = --1 , ID 4.5V = -A VGS = --35 V, I D 0 1 -= VGS 10 5 --25 0 25 50 75 100 125 Case Temperature, Tc -- °C 2 --100 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 7 5 3 2 --0.001 150 IT15183 IS -- VSD VGS=0V Single pulse 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS 10000 --1.4 IT15185 f=1MHz 7 Ciss, Coss, Crss -- pF 3 --3.0 20 5 td(off) 5 --2.5 Single pulse 0 --50 7 10 7 --0.1 --2.0 RDS(on) -- Tc IT15184 SW Time -- ID 2 --1.5 25 Source Current, IS -- A 7 5 --1.0 Gate-to-Source Voltage, VGS -- V --16 VDS= --10V Single pulse 100 --0.5 IT15182 | yfs | -- ID 2 0 IT15180 RDS(on) -- VGS 22 0 --2.0 C --0.8 --25° --0.6 5°C 25°C --0.4 Tc= 7 --0.2 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 24 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --50 --10 Drain-to-Source Voltage, VDS -- V Forward Transfer Admittance, | yfs | -- S --60 --20 --10 Switching Time, SW Time -- ns --70 25° C .5V VGS= --3 --30 0 Tc= -- --80 75° C --2 5°C --50 VDS= --10V Single pulse --90 Drain Current, ID -- A --60 5V --4.0V --16 .0 Drain Current, ID -- A --70 ID -- VGS --100 . --4 --6 .0 -V 10.0V --8.0 V --80 V Tc=25°C Single pulse 25°C 75°C ID -- VDS --90 Ciss 3 2 1000 7 Coss 5 Crss 3 2 3 5 7 --1.0 2 3 5 7 --10 Drain Current, ID -- A 2 3 5 7 --100 IT15186 2 0 --5 --10 --15 --20 --25 --30 --35 Drain-to-Source Voltage, VDS -- V --40 IT15187 No. A1604-3/7 ATP108 VGS -- Qg --10 3 2 --7 --6 --5 3 2 10 20 30 40 50 60 Total Gate Charge, Qg -- nC PD -- Tc 80 40 30 20 10 0 20 40 60 80 100 3 120 Case Temperature, Tc -- °C 140 160 IT15190 0μ s s 5 7 --1.0 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 IT15189 EAS -- Ta 120 50 0 2 IT15188 60 1m Tc=25°C Single pulse --0.1 --0.1 Avalanche Energy derating factor -- % Allowable Power Dissipation, PD -- W 70 70 Operation in this area is limited by RDS(on). 3 2 --1 0 m 0m s s --10 7 5 --1.0 7 5 10 10 3 2 --2 0 ID= --70A 10 μs n --3 10 io at er --4 --100 7 5 PW≤10μs op Drain Current, ID -- A --8 IDP= --210A C D Gate-to-Source Voltage, VGS -- V --9 ASO 5 VDS= --20V ID= --70A 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT15179 No. A1604-4/7 ATP108 Taping Specification ATP108-TL-H No. A1604-5/7 ATP108 Outline Drawing ATP108-TL-H Land Pattern Example Mass (g) Unit 0.266 mm * For reference Unit: mm 6.7 6.5 1.6 2 1.5 2.3 2.3 No. A1604-6/7 ATP108 Note on usage : Since the ATP108 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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